TWI227744B - Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them - Google Patents
Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them Download PDFInfo
- Publication number
- TWI227744B TWI227744B TW092116229A TW92116229A TWI227744B TW I227744 B TWI227744 B TW I227744B TW 092116229 A TW092116229 A TW 092116229A TW 92116229 A TW92116229 A TW 92116229A TW I227744 B TWI227744 B TW I227744B
- Authority
- TW
- Taiwan
- Prior art keywords
- sintered compact
- sintered body
- target
- relative density
- oxide sintered
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title description 5
- 238000005245 sintering Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 10
- 239000002245 particle Substances 0.000 abstract description 9
- 239000010409 thin film Substances 0.000 abstract description 9
- 238000004544 sputter deposition Methods 0.000 abstract description 4
- 229910002353 SrRuO3 Inorganic materials 0.000 abstract 2
- 230000000052 comparative effect Effects 0.000 description 8
- 239000000843 powder Substances 0.000 description 8
- 239000011148 porous material Substances 0.000 description 7
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241001247287 Pentalinon luteum Species 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 229910001927 ruthenium tetroxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/486—Fine ceramics
- C04B35/488—Composites
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- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3227—Lanthanum oxide or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3229—Cerium oxides or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002228165A JP4544501B2 (ja) | 2002-08-06 | 2002-08-06 | 導電性酸化物焼結体、同焼結体からなるスパッタリングターゲット及びこれらの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200402476A TW200402476A (en) | 2004-02-16 |
| TWI227744B true TWI227744B (en) | 2005-02-11 |
Family
ID=31884317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092116229A TWI227744B (en) | 2002-08-06 | 2003-06-16 | Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7252794B2 (enExample) |
| JP (1) | JP4544501B2 (enExample) |
| KR (1) | KR100642929B1 (enExample) |
| MY (1) | MY142079A (enExample) |
| TW (1) | TWI227744B (enExample) |
| WO (1) | WO2004016824A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402862B (zh) * | 2006-03-15 | 2013-07-21 | Sumitomo Metal Mining Co | 氧化物燒結體、其製法、使用它之透明導電膜之製法與所得到的透明導電膜 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4351213B2 (ja) * | 2003-09-03 | 2009-10-28 | 日鉱金属株式会社 | スパッタリング用ターゲット及びその製造方法 |
| KR100881851B1 (ko) * | 2004-03-01 | 2009-02-06 | 닛코킨조쿠 가부시키가이샤 | 고순도 루테니움 분말, 이 고순도 루테니움 분말을소결하여 얻는 스퍼터링 타겟트 및 이 타겟트를 스퍼터링하여 얻은 박막 및 고순도 루테니움 분말의 제조방법 |
| US7686985B2 (en) * | 2005-06-28 | 2010-03-30 | Nippon Mining & Metals Co., Ltd | Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film |
| KR101004981B1 (ko) * | 2005-06-28 | 2011-01-04 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 산화갈륨-산화아연계 스퍼터링 타겟, 투명 도전막의 형성방법 및 투명 도전막 |
| US8118984B2 (en) * | 2006-02-22 | 2012-02-21 | Jx Nippon Mining & Metals Corporation | Sintered sputtering target made of refractory metals |
| SG11202011990SA (en) | 2018-08-09 | 2021-01-28 | Jx Nippon Mining & Metals Corp | Sputtering target, granular film, and perpendicular magnetic recording medium |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5624542A (en) | 1992-05-11 | 1997-04-29 | Gas Research Institute | Enhancement of mechanical properties of ceramic membranes and solid electrolytes |
| JPH0656503A (ja) | 1992-08-10 | 1994-03-01 | Showa Denko Kk | Ｉｔｏ焼結体 |
| DE4421007A1 (de) | 1994-06-18 | 1995-12-21 | Philips Patentverwaltung | Elektronisches Bauteil und Verfahren zu seiner Herstellung |
| JP3710021B2 (ja) | 1997-06-03 | 2005-10-26 | 三井金属鉱業株式会社 | 酸化錫−酸化第一アンチモン焼結体ターゲットおよびその製造方法 |
| JP3636914B2 (ja) | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
| JP3768007B2 (ja) | 1998-06-17 | 2006-04-19 | 株式会社日鉱マテリアルズ | 高純度ＳｒｘＢｉｙＴａ２Ｏ５＋ｘ＋３ｙ／２スパッタリングターゲット材 |
| JP2000034563A (ja) | 1998-07-14 | 2000-02-02 | Japan Energy Corp | 高純度ルテニウムスパッタリングターゲットの製造方法及び高純度ルテニウムスパッタリングターゲット |
| JP2000128638A (ja) | 1998-10-30 | 2000-05-09 | Kyocera Corp | ルテニウム酸ストロンチウム焼結体とその製造方法及びこれを用いたスパッタリングターゲット |
| US6132487A (en) | 1998-11-11 | 2000-10-17 | Nikko Materials Company, Limited | Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof |
| JP2000247739A (ja) * | 1999-02-25 | 2000-09-12 | Vacuum Metallurgical Co Ltd | 高密度Ｐｔ系金属含有金属導電性酸化物およびその製造方法 |
| JP3745553B2 (ja) | 1999-03-04 | 2006-02-15 | 富士通株式会社 | 強誘電体キャパシタ、半導体装置の製造方法 |
| JP4790118B2 (ja) * | 2000-12-26 | 2011-10-12 | Ｊｘ日鉱日石金属株式会社 | 酸化物焼結体及びその製造方法 |
| JP2002211978A (ja) | 2001-01-11 | 2002-07-31 | Hitachi Metals Ltd | ストロンチウム・ルテニウム酸化物焼結体の製造方法およびストロンチウム・ルテニウム酸化物焼結体 |
-
2002
- 2002-08-06 JP JP2002228165A patent/JP4544501B2/ja not_active Expired - Lifetime
-
2003
- 2003-06-12 KR KR1020057001336A patent/KR100642929B1/ko not_active Expired - Lifetime
- 2003-06-12 WO PCT/JP2003/007483 patent/WO2004016824A1/ja not_active Ceased
- 2003-06-12 US US10/522,263 patent/US7252794B2/en not_active Expired - Lifetime
- 2003-06-16 TW TW092116229A patent/TWI227744B/zh not_active IP Right Cessation
- 2003-07-29 MY MYPI20032836A patent/MY142079A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI402862B (zh) * | 2006-03-15 | 2013-07-21 | Sumitomo Metal Mining Co | 氧化物燒結體、其製法、使用它之透明導電膜之製法與所得到的透明導電膜 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7252794B2 (en) | 2007-08-07 |
| US20060071197A1 (en) | 2006-04-06 |
| JP2004068073A (ja) | 2004-03-04 |
| KR100642929B1 (ko) | 2006-11-10 |
| WO2004016824A1 (ja) | 2004-02-26 |
| JP4544501B2 (ja) | 2010-09-15 |
| TW200402476A (en) | 2004-02-16 |
| MY142079A (en) | 2010-08-30 |
| KR20050030211A (ko) | 2005-03-29 |
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