KR100632335B1 - 고체 촬상 장치 및 그 제조 방법 - Google Patents

고체 촬상 장치 및 그 제조 방법 Download PDF

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Publication number
KR100632335B1
KR100632335B1 KR1019990055655A KR19990055655A KR100632335B1 KR 100632335 B1 KR100632335 B1 KR 100632335B1 KR 1019990055655 A KR1019990055655 A KR 1019990055655A KR 19990055655 A KR19990055655 A KR 19990055655A KR 100632335 B1 KR100632335 B1 KR 100632335B1
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KR
South Korea
Prior art keywords
transfer
layer
electrode
electrodes
light receiving
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Expired - Fee Related
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KR1019990055655A
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English (en)
Korean (ko)
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KR20000047983A (ko
Inventor
야마네준지
히끼찌구니히꼬
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소니 가부시끼 가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019990055655A 1998-12-08 1999-12-08 고체 촬상 장치 및 그 제조 방법 Expired - Fee Related KR100632335B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1998-348876 1998-12-08
JP34887698 1998-12-08
JP31710699A JP4433528B2 (ja) 1998-12-08 1999-11-08 固体撮像素子及びその製造方法
JP1999-317106 1999-11-08

Publications (2)

Publication Number Publication Date
KR20000047983A KR20000047983A (ko) 2000-07-25
KR100632335B1 true KR100632335B1 (ko) 2006-10-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990055655A Expired - Fee Related KR100632335B1 (ko) 1998-12-08 1999-12-08 고체 촬상 장치 및 그 제조 방법

Country Status (3)

Country Link
US (3) US6784469B1 (enExample)
JP (1) JP4433528B2 (enExample)
KR (1) KR100632335B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4298964B2 (ja) * 2002-05-16 2009-07-22 富士フイルム株式会社 固体撮像素子及びその製造方法
JP2004335804A (ja) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP4348118B2 (ja) * 2003-06-04 2009-10-21 富士フイルム株式会社 固体撮像素子及び撮影装置
JP4196778B2 (ja) * 2003-08-11 2008-12-17 ソニー株式会社 固体撮像素子及びその製造方法
US7150556B2 (en) * 2004-01-16 2006-12-19 Heng Sheng Kuo Light source structure
JP4413021B2 (ja) * 2004-01-22 2010-02-10 三洋電機株式会社 半導体装置およびその製造方法
JP4281613B2 (ja) 2004-05-07 2009-06-17 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び固体撮像素子の駆動方法
CN100394609C (zh) * 2004-09-07 2008-06-11 三洋电机株式会社 固体摄像装置
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子
JP4733966B2 (ja) * 2004-11-19 2011-07-27 富士フイルム株式会社 固体撮像素子
JP2006237315A (ja) * 2005-02-25 2006-09-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
WO2009078173A1 (ja) * 2007-12-17 2009-06-25 Panasonic Corporation 固体撮像装置の駆動方法
JP2008166845A (ja) * 2008-03-17 2008-07-17 Sony Corp 固体撮像素子及び固体撮像素子の駆動方法
US9848142B2 (en) 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324161Y2 (enExample) * 1978-09-26 1991-05-27

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2525781B2 (ja) * 1986-09-11 1996-08-21 株式会社東芝 固体撮像装置の駆動方法
US5262661A (en) * 1990-06-25 1993-11-16 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device, having increased charge storage and improved electronic shutter operation
JPH05226378A (ja) * 1992-02-17 1993-09-03 Sony Corp 電荷転送素子の製法
JP3456000B2 (ja) * 1993-05-17 2003-10-14 ソニー株式会社 固体撮像素子及びその製造方法
JP2751817B2 (ja) * 1994-02-16 1998-05-18 日本電気株式会社 固体撮像装置およびその製造方法
JPH09172156A (ja) * 1995-12-20 1997-06-30 Toshiba Corp 固体撮像素子及びその製造方法
JP2865083B2 (ja) * 1996-11-08 1999-03-08 日本電気株式会社 固体撮像素子およびその駆動方法
JP2003060192A (ja) * 2001-08-20 2003-02-28 Sony Corp 固体撮像装置の製造方法
JP2004179629A (ja) * 2002-11-14 2004-06-24 Sony Corp 固体撮像素子及びその製造方法
JP3709873B2 (ja) * 2003-02-19 2005-10-26 ソニー株式会社 固体撮像装置及び撮像カメラ
JP2004311801A (ja) * 2003-04-09 2004-11-04 Sharp Corp 半導体受光装置及びその製造方法
JP4196778B2 (ja) * 2003-08-11 2008-12-17 ソニー株式会社 固体撮像素子及びその製造方法
US7187019B2 (en) * 2003-09-26 2007-03-06 Sony Corporation Solid state image pickup device and method of fabricating the same
JP2005191400A (ja) * 2003-12-26 2005-07-14 Fuji Film Microdevices Co Ltd 固体撮像素子及び固体撮像素子の製造方法
KR100574353B1 (ko) * 2004-02-13 2006-04-27 삼성전자주식회사 고체 촬상 장치 및 그 제조 방법
JP4214066B2 (ja) * 2004-03-01 2009-01-28 シャープ株式会社 固体撮像装置
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0324161Y2 (enExample) * 1978-09-26 1991-05-27

Also Published As

Publication number Publication date
US7125740B2 (en) 2006-10-24
US20070004077A1 (en) 2007-01-04
US20040259280A1 (en) 2004-12-23
JP2000232217A (ja) 2000-08-22
JP4433528B2 (ja) 2010-03-17
US7230288B2 (en) 2007-06-12
US6784469B1 (en) 2004-08-31
KR20000047983A (ko) 2000-07-25

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