JP4433528B2 - 固体撮像素子及びその製造方法 - Google Patents

固体撮像素子及びその製造方法 Download PDF

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Publication number
JP4433528B2
JP4433528B2 JP31710699A JP31710699A JP4433528B2 JP 4433528 B2 JP4433528 B2 JP 4433528B2 JP 31710699 A JP31710699 A JP 31710699A JP 31710699 A JP31710699 A JP 31710699A JP 4433528 B2 JP4433528 B2 JP 4433528B2
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JP
Japan
Prior art keywords
transfer
layer
electrode
electrodes
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP31710699A
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English (en)
Japanese (ja)
Other versions
JP2000232217A5 (enExample
JP2000232217A (ja
Inventor
淳二 山根
邦彦 引地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP31710699A priority Critical patent/JP4433528B2/ja
Priority to US09/455,174 priority patent/US6784469B1/en
Priority to KR1019990055655A priority patent/KR100632335B1/ko
Publication of JP2000232217A publication Critical patent/JP2000232217A/ja
Priority to US10/889,157 priority patent/US7125740B2/en
Publication of JP2000232217A5 publication Critical patent/JP2000232217A5/ja
Priority to US11/500,212 priority patent/US7230288B2/en
Application granted granted Critical
Publication of JP4433528B2 publication Critical patent/JP4433528B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H10D44/478—Four-phase CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472—Surface-channel CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP31710699A 1998-12-08 1999-11-08 固体撮像素子及びその製造方法 Expired - Fee Related JP4433528B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP31710699A JP4433528B2 (ja) 1998-12-08 1999-11-08 固体撮像素子及びその製造方法
US09/455,174 US6784469B1 (en) 1998-12-08 1999-12-06 Solid-state image pickup device and fabrication method thereof
KR1019990055655A KR100632335B1 (ko) 1998-12-08 1999-12-08 고체 촬상 장치 및 그 제조 방법
US10/889,157 US7125740B2 (en) 1998-12-08 2004-07-12 Solid-state image pickup device and fabrication method thereof
US11/500,212 US7230288B2 (en) 1998-12-08 2006-08-07 Solid-state image pickup device and fabrication method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP34887698 1998-12-08
JP10-348876 1998-12-08
JP31710699A JP4433528B2 (ja) 1998-12-08 1999-11-08 固体撮像素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2000232217A JP2000232217A (ja) 2000-08-22
JP2000232217A5 JP2000232217A5 (enExample) 2006-05-11
JP4433528B2 true JP4433528B2 (ja) 2010-03-17

Family

ID=26568912

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31710699A Expired - Fee Related JP4433528B2 (ja) 1998-12-08 1999-11-08 固体撮像素子及びその製造方法

Country Status (3)

Country Link
US (3) US6784469B1 (enExample)
JP (1) JP4433528B2 (enExample)
KR (1) KR100632335B1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4298964B2 (ja) * 2002-05-16 2009-07-22 富士フイルム株式会社 固体撮像素子及びその製造方法
JP2004335804A (ja) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
JP4348118B2 (ja) * 2003-06-04 2009-10-21 富士フイルム株式会社 固体撮像素子及び撮影装置
JP4196778B2 (ja) * 2003-08-11 2008-12-17 ソニー株式会社 固体撮像素子及びその製造方法
US7150556B2 (en) * 2004-01-16 2006-12-19 Heng Sheng Kuo Light source structure
JP4413021B2 (ja) * 2004-01-22 2010-02-10 三洋電機株式会社 半導体装置およびその製造方法
JP4281613B2 (ja) 2004-05-07 2009-06-17 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び固体撮像素子の駆動方法
CN100394609C (zh) * 2004-09-07 2008-06-11 三洋电机株式会社 固体摄像装置
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子
JP4733966B2 (ja) * 2004-11-19 2011-07-27 富士フイルム株式会社 固体撮像素子
JP2006237315A (ja) * 2005-02-25 2006-09-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4782037B2 (ja) 2006-03-03 2011-09-28 キヤノンアネルバ株式会社 磁気抵抗効果素子の製造方法及び製造装置
WO2009078173A1 (ja) * 2007-12-17 2009-06-25 Panasonic Corporation 固体撮像装置の駆動方法
JP2008166845A (ja) * 2008-03-17 2008-07-17 Sony Corp 固体撮像素子及び固体撮像素子の駆動方法
US9848142B2 (en) 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239351A (en) * 1978-09-26 1980-12-16 Baylor College Of Medicine Apparatus for generating and displaying visual acuity targets
JP2525781B2 (ja) * 1986-09-11 1996-08-21 株式会社東芝 固体撮像装置の駆動方法
US5262661A (en) * 1990-06-25 1993-11-16 Matsushita Electric Industrial Co., Ltd. Solid-state image pickup device, having increased charge storage and improved electronic shutter operation
JPH05226378A (ja) * 1992-02-17 1993-09-03 Sony Corp 電荷転送素子の製法
JP3456000B2 (ja) * 1993-05-17 2003-10-14 ソニー株式会社 固体撮像素子及びその製造方法
JP2751817B2 (ja) * 1994-02-16 1998-05-18 日本電気株式会社 固体撮像装置およびその製造方法
JPH09172156A (ja) * 1995-12-20 1997-06-30 Toshiba Corp 固体撮像素子及びその製造方法
JP2865083B2 (ja) * 1996-11-08 1999-03-08 日本電気株式会社 固体撮像素子およびその駆動方法
JP2003060192A (ja) * 2001-08-20 2003-02-28 Sony Corp 固体撮像装置の製造方法
JP2004179629A (ja) * 2002-11-14 2004-06-24 Sony Corp 固体撮像素子及びその製造方法
JP3709873B2 (ja) * 2003-02-19 2005-10-26 ソニー株式会社 固体撮像装置及び撮像カメラ
JP2004311801A (ja) * 2003-04-09 2004-11-04 Sharp Corp 半導体受光装置及びその製造方法
JP4196778B2 (ja) * 2003-08-11 2008-12-17 ソニー株式会社 固体撮像素子及びその製造方法
US7187019B2 (en) * 2003-09-26 2007-03-06 Sony Corporation Solid state image pickup device and method of fabricating the same
JP2005191400A (ja) * 2003-12-26 2005-07-14 Fuji Film Microdevices Co Ltd 固体撮像素子及び固体撮像素子の製造方法
KR100574353B1 (ko) * 2004-02-13 2006-04-27 삼성전자주식회사 고체 촬상 장치 및 그 제조 방법
JP4214066B2 (ja) * 2004-03-01 2009-01-28 シャープ株式会社 固体撮像装置
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子

Also Published As

Publication number Publication date
US7125740B2 (en) 2006-10-24
US20070004077A1 (en) 2007-01-04
US20040259280A1 (en) 2004-12-23
KR100632335B1 (ko) 2006-10-11
JP2000232217A (ja) 2000-08-22
US7230288B2 (en) 2007-06-12
US6784469B1 (en) 2004-08-31
KR20000047983A (ko) 2000-07-25

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