JP4583115B2 - 固体撮像素子 - Google Patents
固体撮像素子 Download PDFInfo
- Publication number
- JP4583115B2 JP4583115B2 JP2004260944A JP2004260944A JP4583115B2 JP 4583115 B2 JP4583115 B2 JP 4583115B2 JP 2004260944 A JP2004260944 A JP 2004260944A JP 2004260944 A JP2004260944 A JP 2004260944A JP 4583115 B2 JP4583115 B2 JP 4583115B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- transfer
- light
- solid
- column direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
- H01L27/14818—Optical shielding
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
Description
本実施形態に係る固体撮像素子は、フレーム転送型CCDイメージセンサである。このイメージセンサは、半導体基板表面に形成された撮像部、蓄積部、水平転送部及び出力部を備えて構成される。
本実施形態に係る固体撮像素子は、インターライン転送型CCDイメージセンサである。このイメージセンサは、半導体基板表面に形成された撮像部、水平転送部及び出力部を備えて構成される。
Claims (3)
- 行列配置された複数の受光画素と、前記受光画素毎に発生する信号電荷の列方向の転送を行う複数のシフトレジスタとが構成された撮像領域を有し、
前記シフトレジスタは、
列方向に複数配列され、当該シフトレジスタでの前記信号電荷の転送を担う複数の転送電極と、
前記受光画素の列間にそれぞれ列方向に延在され、前記転送電極に複数相の転送クロックの各相を供給する複数のクロック配線と、
を有し、
前記クロック配線は、遮光性材料で形成され、前記列方向に並ぶ前記受光画素相互間の境界上に沿って、前記各受光画素列の両側の前記クロック配線から交互に延びる突起部を有すること、
を特徴とする固体撮像素子。 - 請求項1に記載の固体撮像素子において、
前記各シフトレジスタはそれぞれ、前記受光画素列を構成し、
前記複数のクロック配線は、前記複数のシフトレジスタ相互間を分離する素子分離領域上に沿って形成されること、を特徴とする固体撮像素子。 - 請求項1から請求項2のいずれか1つに記載の固体撮像素子において、
前記列方向に隣接する前記受光画素上には互いに異なる色透過特性を有したカラーフィルタが配置されること、を特徴とする固体撮像素子。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004260944A JP4583115B2 (ja) | 2004-09-08 | 2004-09-08 | 固体撮像素子 |
CNB200510091737XA CN100508203C (zh) | 2004-09-08 | 2005-08-17 | 固体摄像元件 |
US11/212,619 US7538811B2 (en) | 2004-09-08 | 2005-08-29 | Solid-state image pickup device that suppresses crosstalk between pixels |
TW094129455A TWI263331B (en) | 2004-09-08 | 2005-08-29 | Solid pick-up element |
KR1020050083010A KR100719989B1 (ko) | 2004-09-08 | 2005-09-07 | 고체 촬상 소자 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004260944A JP4583115B2 (ja) | 2004-09-08 | 2004-09-08 | 固体撮像素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006080202A JP2006080202A (ja) | 2006-03-23 |
JP4583115B2 true JP4583115B2 (ja) | 2010-11-17 |
Family
ID=35995782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004260944A Expired - Fee Related JP4583115B2 (ja) | 2004-09-08 | 2004-09-08 | 固体撮像素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7538811B2 (ja) |
JP (1) | JP4583115B2 (ja) |
KR (1) | KR100719989B1 (ja) |
CN (1) | CN100508203C (ja) |
TW (1) | TWI263331B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5207777B2 (ja) * | 2008-03-06 | 2013-06-12 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP2010027865A (ja) * | 2008-07-18 | 2010-02-04 | Nec Electronics Corp | 固体撮像装置 |
JP5172584B2 (ja) * | 2008-10-07 | 2013-03-27 | 株式会社東芝 | 撮像装置 |
JP2010123707A (ja) * | 2008-11-19 | 2010-06-03 | Sony Corp | 固体撮像装置およびその読み出し方法 |
TWI818654B (zh) * | 2022-08-02 | 2023-10-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01103862A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | 固体撮像素子 |
JPH08125158A (ja) * | 1994-10-25 | 1996-05-17 | Sony Corp | 固体撮像素子 |
JPH08236743A (ja) * | 1995-02-27 | 1996-09-13 | Sony Corp | 電荷転送素子 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005101486A (ja) | 2003-08-28 | 2005-04-14 | Sanyo Electric Co Ltd | 固体撮像素子及びその制御方法 |
CN1661806A (zh) * | 2004-02-24 | 2005-08-31 | 三洋电机株式会社 | 固体摄像元件和固体摄像元件的制造方法 |
-
2004
- 2004-09-08 JP JP2004260944A patent/JP4583115B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-17 CN CNB200510091737XA patent/CN100508203C/zh not_active Expired - Fee Related
- 2005-08-29 US US11/212,619 patent/US7538811B2/en active Active
- 2005-08-29 TW TW094129455A patent/TWI263331B/zh not_active IP Right Cessation
- 2005-09-07 KR KR1020050083010A patent/KR100719989B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01103862A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | 固体撮像素子 |
JPH08125158A (ja) * | 1994-10-25 | 1996-05-17 | Sony Corp | 固体撮像素子 |
JPH08236743A (ja) * | 1995-02-27 | 1996-09-13 | Sony Corp | 電荷転送素子 |
Also Published As
Publication number | Publication date |
---|---|
CN1747179A (zh) | 2006-03-15 |
KR100719989B1 (ko) | 2007-05-21 |
TW200614497A (en) | 2006-05-01 |
TWI263331B (en) | 2006-10-01 |
US7538811B2 (en) | 2009-05-26 |
US20060050164A1 (en) | 2006-03-09 |
KR20060051058A (ko) | 2006-05-19 |
JP2006080202A (ja) | 2006-03-23 |
CN100508203C (zh) | 2009-07-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8786739B2 (en) | Photoelectric conversion device and imaging system | |
US7550813B2 (en) | Photoelectric converting film stack type solid-state image pickup device, and method of producing the same | |
US7733398B2 (en) | Photoelectric converting film stack type solid-state image pickup device | |
EP1331670B1 (en) | Solid state image pickup device with two photosensitive fields per one pixel | |
KR20060054147A (ko) | 촬상 소자 | |
US7154549B2 (en) | Solid state image sensor having a single-layered electrode structure | |
KR100632335B1 (ko) | 고체 촬상 장치 및 그 제조 방법 | |
KR100719989B1 (ko) | 고체 촬상 소자 | |
JP4306265B2 (ja) | 固体撮像装置 | |
JP2002043559A (ja) | 固体撮像装置およびその駆動方法 | |
JP2008053304A (ja) | 固体撮像装置 | |
JP3028823B2 (ja) | 電荷結合素子およびこれを用いた固体撮像装置 | |
JP2005322746A (ja) | 固体撮像素子、固体撮像素子の製造方法、及び固体撮像素子の駆動方法 | |
JP4403383B2 (ja) | 固体撮像装置 | |
JP3002365B2 (ja) | 電荷転送装置及びその駆動方法 | |
KR20100032836A (ko) | 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 | |
JP2004273566A (ja) | 固体撮像装置 | |
JPH0130306B2 (ja) | ||
JP2008166845A (ja) | 固体撮像素子及び固体撮像素子の駆動方法 | |
JP2006190790A (ja) | カラーリニアイメージセンサ | |
JP2003209245A (ja) | 固体撮像素子 | |
JPH07162754A (ja) | 固体撮像装置 | |
JP2002247452A (ja) | 固体撮像素子 | |
JPH09275206A (ja) | 固体撮像素子 | |
JPH10223876A (ja) | 固体撮像装置および固体撮像装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070801 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100618 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100622 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100629 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100803 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100831 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4583115 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130910 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |