KR100618895B1 - 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법 - Google Patents

폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법 Download PDF

Info

Publication number
KR100618895B1
KR100618895B1 KR1020050034916A KR20050034916A KR100618895B1 KR 100618895 B1 KR100618895 B1 KR 100618895B1 KR 1020050034916 A KR1020050034916 A KR 1020050034916A KR 20050034916 A KR20050034916 A KR 20050034916A KR 100618895 B1 KR100618895 B1 KR 100618895B1
Authority
KR
South Korea
Prior art keywords
film
layer
silicide
metal
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020050034916A
Other languages
English (en)
Korean (ko)
Inventor
이병학
임동찬
최길현
박희숙
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020050034916A priority Critical patent/KR100618895B1/ko
Priority to US11/400,605 priority patent/US7582924B2/en
Priority to JP2006113558A priority patent/JP2006310842A/ja
Application granted granted Critical
Publication of KR100618895B1 publication Critical patent/KR100618895B1/ko
Priority to JP2013018318A priority patent/JP5604540B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/02—Separating plastics from other materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/04—Disintegrating plastics, e.g. by milling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
    • F23G5/02—Incineration of waste; Incinerator constructions; Details, accessories or control therefor with pretreatment
    • F23G5/027—Incineration of waste; Incinerator constructions; Details, accessories or control therefor with pretreatment pyrolising or gasifying stage
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
    • F23G5/50—Control or safety arrangements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
    • F23G7/12—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of plastics, e.g. rubber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/04—Disintegrating plastics, e.g. by milling
    • B29B2017/0424—Specific disintegrating techniques; devices therefor
    • B29B2017/0496—Pyrolysing the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/62—Plastics recycling; Rubber recycling

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020050034916A 2005-04-27 2005-04-27 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법 Expired - Fee Related KR100618895B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020050034916A KR100618895B1 (ko) 2005-04-27 2005-04-27 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법
US11/400,605 US7582924B2 (en) 2005-04-27 2006-04-07 Semiconductor devices having polymetal gate electrodes
JP2006113558A JP2006310842A (ja) 2005-04-27 2006-04-17 ポリメタルゲート電極を持つ半導体素子及びその製造方法
JP2013018318A JP5604540B2 (ja) 2005-04-27 2013-02-01 ポリメタルゲート電極を持つ半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050034916A KR100618895B1 (ko) 2005-04-27 2005-04-27 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR100618895B1 true KR100618895B1 (ko) 2006-09-01

Family

ID=37233642

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050034916A Expired - Fee Related KR100618895B1 (ko) 2005-04-27 2005-04-27 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법

Country Status (3)

Country Link
US (1) US7582924B2 (https=)
JP (2) JP2006310842A (https=)
KR (1) KR100618895B1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100843230B1 (ko) 2007-01-17 2008-07-02 삼성전자주식회사 금속층을 가지는 게이트 전극을 구비한 반도체 소자 및 그제조 방법
US7781849B2 (en) * 2008-01-29 2010-08-24 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
US7902614B2 (en) 2006-12-27 2011-03-08 Hynix Semiconductor Inc. Semiconductor device with gate stack structure
KR102891842B1 (ko) * 2020-08-13 2025-11-28 도쿄엘렉트론가부시키가이샤 반도체 장치의 전극부 및 그 제조 방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100840786B1 (ko) * 2006-07-28 2008-06-23 삼성전자주식회사 저저항 게이트 전극을 구비하는 반도체 장치 및 이의제조방법
KR100844940B1 (ko) * 2006-12-27 2008-07-09 주식회사 하이닉스반도체 다중 확산방지막을 구비한 반도체소자 및 그의 제조 방법
US7781333B2 (en) * 2006-12-27 2010-08-24 Hynix Semiconductor Inc. Semiconductor device with gate structure and method for fabricating the semiconductor device
KR100809719B1 (ko) * 2007-01-18 2008-03-06 삼성전자주식회사 폴리실리콘막과 배선금속막을 구비하는 게이트 전극의형성방법
KR101026386B1 (ko) 2009-05-06 2011-04-07 주식회사 하이닉스반도체 반도체 소자의 듀얼 폴리게이트 형성방법
JP5285519B2 (ja) * 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
TWI441303B (zh) * 2011-06-10 2014-06-11 國立交通大學 適用於銅製程的半導體裝置
JP2013074271A (ja) * 2011-09-29 2013-04-22 Ulvac Japan Ltd デバイスの製造方法および製造装置
KR20140110146A (ko) * 2013-03-04 2014-09-17 삼성전자주식회사 반도체 소자
US9401279B2 (en) 2013-06-14 2016-07-26 Sandisk Technologies Llc Transistor gate and process for making transistor gate
KR102389819B1 (ko) 2015-06-17 2022-04-22 삼성전자주식회사 반도체 소자의 제조 방법
KR102402761B1 (ko) 2015-10-30 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP6560112B2 (ja) * 2015-12-09 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10892224B2 (en) * 2018-02-26 2021-01-12 Micron Technology, Inc. Apparatuses comprising protective material along surfaces of tungsten-containing structures
US11309387B2 (en) * 2019-11-05 2022-04-19 Nanya Technology Corporation Semiconductor device and method for fabricating the same
JP2022181679A (ja) 2021-05-26 2022-12-08 キオクシア株式会社 半導体装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144624A (ja) 1996-11-08 1998-05-29 Nippon Steel Corp 半導体装置の製造方法
JP2002050756A (ja) 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 電極構造体の形成方法及び半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10289885A (ja) * 1997-04-14 1998-10-27 Hitachi Ltd 半導体装置およびその製造方法
JPH11168208A (ja) * 1997-12-03 1999-06-22 Nec Corp 半導体装置及びその製造方法
KR100296133B1 (ko) 1998-06-30 2001-08-07 박종섭 반도체 장치의 금속 게이트 전극 형성방법
JP2000036593A (ja) * 1998-07-17 2000-02-02 Fujitsu Ltd 半導体装置
JP3264324B2 (ja) * 1998-08-26 2002-03-11 日本電気株式会社 半導体装置の製造方法および半導体装置
US6191444B1 (en) * 1998-09-03 2001-02-20 Micron Technology, Inc. Mini flash process and circuit
JP3144483B2 (ja) * 1998-11-10 2001-03-12 日本電気株式会社 半導体装置およびその製造方法
JP2000243723A (ja) * 1999-02-24 2000-09-08 Sony Corp 半導体装置の製造方法
JP2001100760A (ja) 1999-09-27 2001-04-13 Yamaha Corp 波形生成方法及び装置
JP3247100B2 (ja) * 2000-03-13 2002-01-15 松下電器産業株式会社 電極構造体の形成方法及び半導体装置の製造方法
JP4651848B2 (ja) * 2000-07-21 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP2002261161A (ja) * 2001-03-05 2002-09-13 Hitachi Ltd 半導体装置の製造方法
JP3781666B2 (ja) * 2001-11-29 2006-05-31 エルピーダメモリ株式会社 ゲート電極の形成方法及びゲート電極構造
KR20040008649A (ko) 2002-07-19 2004-01-31 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
US6902993B2 (en) * 2003-03-28 2005-06-07 Cypress Semiconductor Corporation Gate electrode for MOS transistors
JP2005311300A (ja) * 2004-03-26 2005-11-04 Toshiba Corp 半導体記憶装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144624A (ja) 1996-11-08 1998-05-29 Nippon Steel Corp 半導体装置の製造方法
JP2002050756A (ja) 2000-08-02 2002-02-15 Matsushita Electric Ind Co Ltd 電極構造体の形成方法及び半導体装置の製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7902614B2 (en) 2006-12-27 2011-03-08 Hynix Semiconductor Inc. Semiconductor device with gate stack structure
US8008178B2 (en) 2006-12-27 2011-08-30 Hynix Semiconductor Inc. Method for fabricating semiconductor device with an intermediate stack structure
US8441079B2 (en) 2006-12-27 2013-05-14 Hynix Semiconductor Inc. Semiconductor device with gate stack structure
US9064854B2 (en) 2006-12-27 2015-06-23 SK Hynix Inc. Semiconductor device with gate stack structure
KR100843230B1 (ko) 2007-01-17 2008-07-02 삼성전자주식회사 금속층을 가지는 게이트 전극을 구비한 반도체 소자 및 그제조 방법
US7781849B2 (en) * 2008-01-29 2010-08-24 Samsung Electronics Co., Ltd. Semiconductor devices and methods of fabricating the same
KR102891842B1 (ko) * 2020-08-13 2025-11-28 도쿄엘렉트론가부시키가이샤 반도체 장치의 전극부 및 그 제조 방법

Also Published As

Publication number Publication date
US20060244084A1 (en) 2006-11-02
JP2013102219A (ja) 2013-05-23
JP2006310842A (ja) 2006-11-09
US7582924B2 (en) 2009-09-01
JP5604540B2 (ja) 2014-10-08

Similar Documents

Publication Publication Date Title
JP5604540B2 (ja) ポリメタルゲート電極を持つ半導体素子の製造方法
US6239471B1 (en) MIS transistor and manufacturing method thereof
US8008178B2 (en) Method for fabricating semiconductor device with an intermediate stack structure
CN101339918B (zh) 制造钨线和使用该钨线制造半导体器件栅极的方法
JP4854245B2 (ja) 半導体装置の製造方法
US6436840B1 (en) Metal gate with CVD amorphous silicon layer and a barrier layer for CMOS devices and method of making with a replacement gate process
KR100543207B1 (ko) 하드마스크를 이용한 반도체 소자의 게이트전극 제조 방법
US6440868B1 (en) Metal gate with CVD amorphous silicon layer and silicide for CMOS devices and method of making with a replacement gate process
US7687389B2 (en) Method for fabricating semiconductor device
CN100592482C (zh) 半导体器件及其制造方法
KR20070002559A (ko) 이중 확산방지막을 갖는 게이트전극 및 그를 구비한반도체소자의 제조 방법
US20120007246A1 (en) Semiconductor device and method for fabricating the same
JP2003332571A (ja) 半導体素子の製造方法
KR101212568B1 (ko) 반도체소자의 게이트스택 및 그 제조 방법
KR20050008050A (ko) 이중 하드마스크를 이용한 반도체 소자의 게이트전극 제조방법
KR100625814B1 (ko) 반도체 장치 및 그 제조방법
KR100863519B1 (ko) 반도체 소자 및 그의 제조방법
KR20050067451A (ko) 반도체 소자 및 제조방법
KR100744642B1 (ko) 반도체 소자의 금속배선, 반도체 소자의 게이트 전극 및 그형성방법
KR100668844B1 (ko) 반도체 소자의 게이트 형성방법
KR100291516B1 (ko) 반도체 소자의 게이트 전극 형성방법
KR20050010673A (ko) 게이트 전극 상의 하드마스크로부터 기인되는 소자의열화를 방지할 수 있는 반도체 장치 및 그 제조 방법
KR20080089745A (ko) 반도체 소자의 제조방법
KR20050067452A (ko) 반도체 소자 및 제조방법
JP2010166081A (ja) Ｍｉｓトランジスタ

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20120801

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20130731

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140731

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20160801

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180731

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20190731

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 18

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240826

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240826

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000