JP2006310842A - ポリメタルゲート電極を持つ半導体素子及びその製造方法 - Google Patents

ポリメタルゲート電極を持つ半導体素子及びその製造方法 Download PDF

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Publication number
JP2006310842A
JP2006310842A JP2006113558A JP2006113558A JP2006310842A JP 2006310842 A JP2006310842 A JP 2006310842A JP 2006113558 A JP2006113558 A JP 2006113558A JP 2006113558 A JP2006113558 A JP 2006113558A JP 2006310842 A JP2006310842 A JP 2006310842A
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JP
Japan
Prior art keywords
film
silicide film
metal
tin
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006113558A
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English (en)
Japanese (ja)
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JP2006310842A5 (https=
Inventor
Byung Hak Lee
炳學 李
Dong-Chan Lim
東燦 林
Gil-Heyun Choi
吉鉉 崔
Hee-Sook Park
嬉淑 朴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2006310842A publication Critical patent/JP2006310842A/ja
Publication of JP2006310842A5 publication Critical patent/JP2006310842A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/02—Separating plastics from other materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01306—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon
    • H10D64/01308—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal
    • H10D64/01312—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon the conductor further comprising a non-elemental silicon additional conductive layer, e.g. a metal silicide layer formed by the reaction of silicon with an implanted metal the additional layer comprising a metal or metal silicide formed by deposition, i.e. without a silicidation reaction, e.g. sputter deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/04—Disintegrating plastics, e.g. by milling
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
    • F23G5/02—Incineration of waste; Incinerator constructions; Details, accessories or control therefor with pretreatment
    • F23G5/027—Incineration of waste; Incinerator constructions; Details, accessories or control therefor with pretreatment pyrolising or gasifying stage
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
    • F23G5/50—Control or safety arrangements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
    • F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
    • F23G7/12—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of plastics, e.g. rubber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
    • B29B17/00—Recovery of plastics or other constituents of waste material containing plastics
    • B29B17/04—Disintegrating plastics, e.g. by milling
    • B29B2017/0424—Specific disintegrating techniques; devices therefor
    • B29B2017/0496—Pyrolysing the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/62—Plastics recycling; Rubber recycling

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006113558A 2005-04-27 2006-04-17 ポリメタルゲート電極を持つ半導体素子及びその製造方法 Withdrawn JP2006310842A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050034916A KR100618895B1 (ko) 2005-04-27 2005-04-27 폴리메탈 게이트 전극을 가지는 반도체 소자 및 그 제조방법

Related Child Applications (1)

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JP2013018318A Division JP5604540B2 (ja) 2005-04-27 2013-02-01 ポリメタルゲート電極を持つ半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2006310842A true JP2006310842A (ja) 2006-11-09
JP2006310842A5 JP2006310842A5 (https=) 2009-05-28

Family

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JP2006113558A Withdrawn JP2006310842A (ja) 2005-04-27 2006-04-17 ポリメタルゲート電極を持つ半導体素子及びその製造方法
JP2013018318A Expired - Lifetime JP5604540B2 (ja) 2005-04-27 2013-02-01 ポリメタルゲート電極を持つ半導体素子の製造方法

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Country Status (3)

Country Link
US (1) US7582924B2 (https=)
JP (2) JP2006310842A (https=)
KR (1) KR100618895B1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008166686A (ja) * 2006-12-27 2008-07-17 Hynix Semiconductor Inc ゲート構造を有する半導体素子及びその製造方法
JP2013074271A (ja) * 2011-09-29 2013-04-22 Ulvac Japan Ltd デバイスの製造方法および製造装置
WO2022034826A1 (ja) * 2020-08-13 2022-02-17 東京エレクトロン株式会社 半導体装置の電極部及びその製造方法

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KR100840786B1 (ko) * 2006-07-28 2008-06-23 삼성전자주식회사 저저항 게이트 전극을 구비하는 반도체 장치 및 이의제조방법
KR100844940B1 (ko) * 2006-12-27 2008-07-09 주식회사 하이닉스반도체 다중 확산방지막을 구비한 반도체소자 및 그의 제조 방법
DE102007045074B4 (de) 2006-12-27 2009-06-18 Hynix Semiconductor Inc., Ichon Halbleiterbauelement mit Gatestapelstruktur
KR100843230B1 (ko) 2007-01-17 2008-07-02 삼성전자주식회사 금속층을 가지는 게이트 전극을 구비한 반도체 소자 및 그제조 방법
KR100809719B1 (ko) * 2007-01-18 2008-03-06 삼성전자주식회사 폴리실리콘막과 배선금속막을 구비하는 게이트 전극의형성방법
KR101448852B1 (ko) * 2008-01-29 2014-10-14 삼성전자주식회사 반도체 소자 및 그 제조방법
KR101026386B1 (ko) 2009-05-06 2011-04-07 주식회사 하이닉스반도체 반도체 소자의 듀얼 폴리게이트 형성방법
JP5285519B2 (ja) * 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
TWI441303B (zh) * 2011-06-10 2014-06-11 國立交通大學 適用於銅製程的半導體裝置
KR20140110146A (ko) * 2013-03-04 2014-09-17 삼성전자주식회사 반도체 소자
US9401279B2 (en) 2013-06-14 2016-07-26 Sandisk Technologies Llc Transistor gate and process for making transistor gate
KR102389819B1 (ko) 2015-06-17 2022-04-22 삼성전자주식회사 반도체 소자의 제조 방법
KR102402761B1 (ko) 2015-10-30 2022-05-26 삼성전자주식회사 반도체 장치 및 이의 제조 방법
JP6560112B2 (ja) * 2015-12-09 2019-08-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10892224B2 (en) * 2018-02-26 2021-01-12 Micron Technology, Inc. Apparatuses comprising protective material along surfaces of tungsten-containing structures
US11309387B2 (en) * 2019-11-05 2022-04-19 Nanya Technology Corporation Semiconductor device and method for fabricating the same
JP2022181679A (ja) 2021-05-26 2022-12-08 キオクシア株式会社 半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
JPH11168208A (ja) * 1997-12-03 1999-06-22 Nec Corp 半導体装置及びその製造方法
JP2000036593A (ja) * 1998-07-17 2000-02-02 Fujitsu Ltd 半導体装置
JP2000068502A (ja) * 1998-08-26 2000-03-03 Nec Corp 半導体装置の製造方法および半導体装置
JP2000150871A (ja) * 1998-11-10 2000-05-30 Nec Corp 半導体装置およびその製造方法
JP2001332511A (ja) * 2000-03-13 2001-11-30 Matsushita Electric Ind Co Ltd 電極構造体の形成方法及び半導体装置の製造方法
JP2002100760A (ja) * 2000-07-21 2002-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP2002261161A (ja) * 2001-03-05 2002-09-13 Hitachi Ltd 半導体装置の製造方法
WO2004095525A2 (en) * 2003-03-28 2004-11-04 Cypress Semiconductor Corporation Gate electrode for mos transistors

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JP2001100760A (ja) 1999-09-27 2001-04-13 Yamaha Corp 波形生成方法及び装置
JP3305301B2 (ja) 2000-08-02 2002-07-22 松下電器産業株式会社 電極構造体の形成方法及び半導体装置の製造方法
JP3781666B2 (ja) * 2001-11-29 2006-05-31 エルピーダメモリ株式会社 ゲート電極の形成方法及びゲート電極構造
KR20040008649A (ko) 2002-07-19 2004-01-31 주식회사 하이닉스반도체 반도체 소자의 게이트 형성방법
JP2005311300A (ja) * 2004-03-26 2005-11-04 Toshiba Corp 半導体記憶装置及びその製造方法

Patent Citations (9)

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Publication number Priority date Publication date Assignee Title
JPH11168208A (ja) * 1997-12-03 1999-06-22 Nec Corp 半導体装置及びその製造方法
JP2000036593A (ja) * 1998-07-17 2000-02-02 Fujitsu Ltd 半導体装置
JP2000068502A (ja) * 1998-08-26 2000-03-03 Nec Corp 半導体装置の製造方法および半導体装置
JP2000150871A (ja) * 1998-11-10 2000-05-30 Nec Corp 半導体装置およびその製造方法
JP2001332511A (ja) * 2000-03-13 2001-11-30 Matsushita Electric Ind Co Ltd 電極構造体の形成方法及び半導体装置の製造方法
JP2002100760A (ja) * 2000-07-21 2002-04-05 Mitsubishi Electric Corp 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP2002261161A (ja) * 2001-03-05 2002-09-13 Hitachi Ltd 半導体装置の製造方法
WO2004095525A2 (en) * 2003-03-28 2004-11-04 Cypress Semiconductor Corporation Gate electrode for mos transistors
JP2006522481A (ja) * 2003-03-28 2006-09-28 サイプレス セミコンダクター コーポレイション Ｍｏｓトランジスタのためのゲート電極

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008166686A (ja) * 2006-12-27 2008-07-17 Hynix Semiconductor Inc ゲート構造を有する半導体素子及びその製造方法
JP2013074271A (ja) * 2011-09-29 2013-04-22 Ulvac Japan Ltd デバイスの製造方法および製造装置
WO2022034826A1 (ja) * 2020-08-13 2022-02-17 東京エレクトロン株式会社 半導体装置の電極部及びその製造方法
JP2022032659A (ja) * 2020-08-13 2022-02-25 東京エレクトロン株式会社 半導体装置の電極部及びその製造方法
CN116097402A (zh) * 2020-08-13 2023-05-09 东京毅力科创株式会社 半导体器件的电极部及其制造方法
JP7583550B2 (ja) 2020-08-13 2024-11-14 東京エレクトロン株式会社 半導体装置の電極部及びその製造方法

Also Published As

Publication number Publication date
US20060244084A1 (en) 2006-11-02
JP2013102219A (ja) 2013-05-23
KR100618895B1 (ko) 2006-09-01
US7582924B2 (en) 2009-09-01
JP5604540B2 (ja) 2014-10-08

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