KR100618242B1 - 소자 타이밍 보정용 소자 및 방법 - Google Patents

소자 타이밍 보정용 소자 및 방법 Download PDF

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Publication number
KR100618242B1
KR100618242B1 KR1020007003857A KR20007003857A KR100618242B1 KR 100618242 B1 KR100618242 B1 KR 100618242B1 KR 1020007003857 A KR1020007003857 A KR 1020007003857A KR 20007003857 A KR20007003857 A KR 20007003857A KR 100618242 B1 KR100618242 B1 KR 100618242B1
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South Korea
Prior art keywords
memory
communication bus
delay
timing
column
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Expired - Fee Related
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KR1020007003857A
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English (en)
Korean (ko)
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KR20010031040A (ko
Inventor
페트릭에이. 웨어
리차드엠. 바스
도널드씨. 스타크
크레이그이. 햄펠
엘리케이. 천
아비지트엠. 아브양카
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람버스 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device

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  • Dram (AREA)
  • Information Transfer Systems (AREA)
  • Memory System (AREA)
  • Paper (AREA)
  • Optical Communication System (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Synchronisation In Digital Transmission Systems (AREA)
  • Static Random-Access Memory (AREA)
KR1020007003857A 1997-10-10 1998-10-09 소자 타이밍 보정용 소자 및 방법 Expired - Fee Related KR100618242B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US6176997P 1997-10-10 1997-10-10
US60/061,769 1997-10-10
PCT/US1998/021491 WO1999019876A1 (en) 1997-10-10 1998-10-09 Apparatus and method for device timing compensation

Publications (2)

Publication Number Publication Date
KR20010031040A KR20010031040A (ko) 2001-04-16
KR100618242B1 true KR100618242B1 (ko) 2006-09-04

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ID=22038016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007003857A Expired - Fee Related KR100618242B1 (ko) 1997-10-10 1998-10-09 소자 타이밍 보정용 소자 및 방법

Country Status (8)

Country Link
US (1) US6226754B1 (enExample)
EP (1) EP1019911B1 (enExample)
JP (3) JP4578676B2 (enExample)
KR (1) KR100618242B1 (enExample)
AT (1) ATE245303T1 (enExample)
AU (1) AU9604598A (enExample)
DE (1) DE69816464T2 (enExample)
WO (1) WO1999019876A1 (enExample)

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US6154821A (en) * 1998-03-10 2000-11-28 Rambus Inc. Method and apparatus for initializing dynamic random access memory (DRAM) devices by levelizing a read domain
US6643787B1 (en) 1999-10-19 2003-11-04 Rambus Inc. Bus system optimization
US6646953B1 (en) 2000-07-06 2003-11-11 Rambus Inc. Single-clock, strobeless signaling system
US6584576B1 (en) * 1999-11-12 2003-06-24 Kingston Technology Corporation Memory system using complementary delay elements to reduce rambus module timing skew
US6516396B1 (en) * 1999-12-22 2003-02-04 Intel Corporation Means to extend tTR range of RDRAMS via the RDRAM memory controller
US6658523B2 (en) * 2001-03-13 2003-12-02 Micron Technology, Inc. System latency levelization for read data
US6675272B2 (en) * 2001-04-24 2004-01-06 Rambus Inc. Method and apparatus for coordinating memory operations among diversely-located memory components
US7698441B2 (en) * 2002-10-03 2010-04-13 International Business Machines Corporation Intelligent use of user data to pre-emptively prevent execution of a query violating access controls
DE10345550B3 (de) * 2003-09-30 2005-02-10 Infineon Technologies Ag Speicheranordnung mit mehreren RAM-Bausteinen
DE102004016337A1 (de) * 2004-04-02 2005-10-27 Siemens Ag Empfangsschaltung
US7669027B2 (en) * 2004-08-19 2010-02-23 Micron Technology, Inc. Memory command delay balancing in a daisy-chained memory topology
US7248511B2 (en) * 2005-02-24 2007-07-24 Infineon Technologies Ag Random access memory including selective activation of select line
US8327104B2 (en) * 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US7940545B2 (en) * 2008-06-24 2011-05-10 Freescale Semiconductor, Inc. Low power read scheme for read only memory (ROM)
US10566040B2 (en) 2016-07-29 2020-02-18 Micron Technology, Inc. Variable page size architecture
US10892007B2 (en) 2018-08-31 2021-01-12 Taiwan Semiconductor Manufacturing Company, Ltd. Variable delay word line enable
DE102018128927B4 (de) 2018-08-31 2024-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wortleitungsaktivierung für eine variable Verzögerung
JP6986127B1 (ja) * 2020-10-21 2021-12-22 華邦電子股▲ふん▼有限公司Winbond Electronics Corp. メモリシステムおよびその操作方法
JP2025516288A (ja) * 2022-05-04 2025-05-27 アトメラ インコーポレイテッド 消費電力を削減したｄｒａｍセンスアンプアーキテクチャ及びそれに関する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2250359A (en) * 1990-11-19 1992-06-03 Anamartic Ltd Addressing of chained circuit modules
US5615358A (en) * 1992-05-28 1997-03-25 Texas Instruments Incorporated Time skewing arrangement for operating memory in synchronism with a data processor
US5654936A (en) * 1995-05-25 1997-08-05 Samsung Electronics Co., Ltd. Control circuit and method for controlling a data line switching circuit in a semiconductor memory device

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
KR960003526B1 (ko) * 1992-10-02 1996-03-14 삼성전자주식회사 반도체 메모리장치
IL96808A (en) 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage
JPH04147492A (ja) * 1990-10-11 1992-05-20 Hitachi Ltd 半導体メモリ
JPH0567394A (ja) * 1991-09-09 1993-03-19 Seiko Epson Corp 半導体記憶装置
JPH0645892A (ja) * 1992-08-24 1994-02-18 Yamaha Corp 信号遅延回路
JPH06124230A (ja) * 1992-10-09 1994-05-06 Casio Electron Mfg Co Ltd ダイナミックｒａｍアクセス制御装置
JPH06273478A (ja) * 1993-03-20 1994-09-30 Hitachi Ltd クロックスキュー補正回路、及び半導体集積回路
JPH0745068A (ja) * 1993-08-02 1995-02-14 Mitsubishi Electric Corp 同期型半導体記憶装置
JPH0784863A (ja) * 1993-09-20 1995-03-31 Hitachi Ltd 情報処理装置およびそれに適した半導体記憶装置
EP0660329B1 (en) 1993-12-16 2003-04-09 Mosaid Technologies Incorporated Variable latency, output buffer and synchronizer for synchronous memory
JP2991023B2 (ja) * 1993-12-28 1999-12-20 株式会社日立製作所 データ送信装置、データ送受信装置及びシステム
JPH08123717A (ja) * 1994-10-25 1996-05-17 Oki Electric Ind Co Ltd 半導体記憶装置
JPH08130448A (ja) * 1994-10-31 1996-05-21 Sanyo Electric Co Ltd 可変遅延回路
US5600605A (en) 1995-06-07 1997-02-04 Micron Technology, Inc. Auto-activate on synchronous dynamic random access memory
JPH09139074A (ja) * 1995-11-10 1997-05-27 Hitachi Ltd ダイナミック型ｒａｍ
EP0867068A1 (en) 1995-12-15 1998-09-30 Unisys Corporation Delay circuit and memory using the same
US6043684A (en) * 1995-12-20 2000-03-28 Cypress Semiconductor Corp. Method and apparatus for reducing skew between input signals and clock signals within an integrated circuit
JP3986578B2 (ja) * 1996-01-17 2007-10-03 三菱電機株式会社 同期型半導体記憶装置
JPH10340222A (ja) * 1997-06-09 1998-12-22 Nec Corp メモリ装置の入力回路及び出力回路
US5936977A (en) * 1997-09-17 1999-08-10 Cypress Semiconductor Corp. Scan path circuitry including a programmable delay circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2250359A (en) * 1990-11-19 1992-06-03 Anamartic Ltd Addressing of chained circuit modules
US5615358A (en) * 1992-05-28 1997-03-25 Texas Instruments Incorporated Time skewing arrangement for operating memory in synchronism with a data processor
US5654936A (en) * 1995-05-25 1997-08-05 Samsung Electronics Co., Ltd. Control circuit and method for controlling a data line switching circuit in a semiconductor memory device

Also Published As

Publication number Publication date
JP4870122B2 (ja) 2012-02-08
JP4578676B2 (ja) 2010-11-10
JP2008305537A (ja) 2008-12-18
KR20010031040A (ko) 2001-04-16
DE69816464T2 (de) 2004-04-15
AU9604598A (en) 1999-05-03
US6226754B1 (en) 2001-05-01
JP2001520431A (ja) 2001-10-30
ATE245303T1 (de) 2003-08-15
DE69816464D1 (de) 2003-08-21
WO1999019876A1 (en) 1999-04-22
JP2008210502A (ja) 2008-09-11
EP1019911B1 (en) 2003-07-16
JP4579304B2 (ja) 2010-11-10
EP1019911A1 (en) 2000-07-19

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