KR100574000B1 - 신규 설포닐디아조메탄 화합물, 광산발생제 및 그를이용한 레지스트 재료, 및 패턴 형성방법 - Google Patents

신규 설포닐디아조메탄 화합물, 광산발생제 및 그를이용한 레지스트 재료, 및 패턴 형성방법 Download PDF

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KR100574000B1
KR100574000B1 KR1020030027761A KR20030027761A KR100574000B1 KR 100574000 B1 KR100574000 B1 KR 100574000B1 KR 1020030027761 A KR1020030027761 A KR 1020030027761A KR 20030027761 A KR20030027761 A KR 20030027761A KR 100574000 B1 KR100574000 B1 KR 100574000B1
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South Korea
Prior art keywords
group
acid
bis
carbon atoms
formula
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KR1020030027761A
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English (en)
Korean (ko)
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KR20040010098A (ko
Inventor
고바야시가쓰히로
오사와요우이치
하세가와고지
요시하라다카오
마에다가즈노리
후지이도시히코
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신에쓰 가가꾸 고교 가부시끼가이샤
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Publication of KR20040010098A publication Critical patent/KR20040010098A/ko
Application granted granted Critical
Publication of KR100574000B1 publication Critical patent/KR100574000B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00—Sulfones; Sulfoxides
    • C07C317/26—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C317/28—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton with sulfone or sulfoxide groups bound to acyclic carbon atoms of the carbon skeleton
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
KR1020030027761A 2002-05-01 2003-04-30 신규 설포닐디아조메탄 화합물, 광산발생제 및 그를이용한 레지스트 재료, 및 패턴 형성방법 KR100574000B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2002-00129681 2002-05-01
JP2002129681 2002-05-01

Publications (2)

Publication Number Publication Date
KR20040010098A KR20040010098A (ko) 2004-01-31
KR100574000B1 true KR100574000B1 (ko) 2006-04-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030027761A KR100574000B1 (ko) 2002-05-01 2003-04-30 신규 설포닐디아조메탄 화합물, 광산발생제 및 그를이용한 레지스트 재료, 및 패턴 형성방법

Country Status (3)

Country Link
US (1) US6713612B2 (US06916591-20050712-C00057.png)
KR (1) KR100574000B1 (US06916591-20050712-C00057.png)
TW (1) TW200405128A (US06916591-20050712-C00057.png)

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GB0114265D0 (en) * 2001-06-12 2001-08-01 Ciba Sc Holding Ag Polymeric material containing a latent acid
JP3991223B2 (ja) * 2003-02-13 2007-10-17 信越化学工業株式会社 新規スルホニルジアゾメタン化合物、光酸発生剤、並びにそれを用いたレジスト材料及びパターン形成方法
JP4493938B2 (ja) * 2003-06-06 2010-06-30 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP4322097B2 (ja) * 2003-11-14 2009-08-26 東京応化工業株式会社 Ｅｌ表示素子の隔壁、およびｅｌ表示素子
JP2005215112A (ja) * 2004-01-28 2005-08-11 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物、および、レジストパターン形成方法
KR20050108277A (ko) * 2004-05-12 2005-11-16 주식회사 동진쎄미켐 광산발생 작용성 모노머, 이를 포함하는 감광성 폴리머 및화학증폭형 포토레지스트 조성물
US7910531B2 (en) 2004-06-17 2011-03-22 C2C Technologies Llc Composition and method for producing colored bubbles
US7527912B2 (en) * 2006-09-28 2009-05-05 Shin-Etsu Chemical Co., Ltd. Photoacid generators, resist compositions, and patterning process
JP5729312B2 (ja) * 2011-01-19 2015-06-03 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
KR102182234B1 (ko) * 2012-07-31 2020-11-24 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법
CN106916089B (zh) * 2017-03-14 2018-10-19 大连九信精细化工有限公司 一种选择性合成顺式4-正戊基环己硫醇的制备方法
US11474430B2 (en) * 2017-08-26 2022-10-18 Irresistible Materials Ltd Multiple trigger monomer containing photoresist compositions and method

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JPH01138604A (ja) 1987-11-25 1989-05-31 Hitachi Metals Ltd 高密度記録用磁気ヘッド
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JP4235781B2 (ja) 1999-10-06 2009-03-11 信越化学工業株式会社 新規スルホニルジアゾメタン化合物及びレジスト材料用の光酸発生剤
US6689530B2 (en) * 2001-09-28 2004-02-10 Shin-Etsu Chemical Co., Ltd. Sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process

Also Published As

Publication number Publication date
US20030224298A1 (en) 2003-12-04
TWI305869B (US06916591-20050712-C00057.png) 2009-02-01
TW200405128A (en) 2004-04-01
KR20040010098A (ko) 2004-01-31
US6713612B2 (en) 2004-03-30

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