KR100568758B1 - Ｅｕｖ-리소그래피용 제 1 볼록 미러를 갖는 링 필드-4-미러시스템 - Google Patents

Ｅｕｖ-리소그래피용 제 1 볼록 미러를 갖는 링 필드-4-미러시스템 Download PDF

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Publication number
KR100568758B1
KR100568758B1 KR1019990019502A KR19990019502A KR100568758B1 KR 100568758 B1 KR100568758 B1 KR 100568758B1 KR 1019990019502 A KR1019990019502 A KR 1019990019502A KR 19990019502 A KR19990019502 A KR 19990019502A KR 100568758 B1 KR100568758 B1 KR 100568758B1
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KR
South Korea
Prior art keywords
mirror
objective lens
optical axis
reduction objective
mask
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Expired - Fee Related
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KR1019990019502A
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English (en)
Korean (ko)
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KR19990088660A (ko
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딩어우도
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칼 짜이스 에스엠테 아게
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019990019502A 1998-05-30 1999-05-28 Ｅｕｖ-리소그래피용 제 1 볼록 미러를 갖는 링 필드-4-미러시스템 Expired - Fee Related KR100568758B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19824442.8 1998-05-30
DE19824442 1998-05-30

Publications (2)

Publication Number Publication Date
KR19990088660A KR19990088660A (ko) 1999-12-27
KR100568758B1 true KR100568758B1 (ko) 2006-04-06

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Family Applications (1)

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KR1019990019502A Expired - Fee Related KR100568758B1 (ko) 1998-05-30 1999-05-28 Ｅｕｖ-리소그래피용 제 1 볼록 미러를 갖는 링 필드-4-미러시스템

Country Status (6)

Country Link
US (1) US6244717B1 (enExample)
EP (2) EP1480082B1 (enExample)
JP (1) JP2000031041A (enExample)
KR (1) KR100568758B1 (enExample)
DE (2) DE19923609A1 (enExample)
TW (1) TW512238B (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7186983B2 (en) 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19903807A1 (de) 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US6947124B2 (en) 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6577443B2 (en) * 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
EP2081086B1 (en) * 2000-11-07 2013-01-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
JP2003045782A (ja) 2001-07-31 2003-02-14 Canon Inc 反射型縮小投影光学系及びそれを用いた露光装置
DE10139188A1 (de) 2001-08-16 2003-03-06 Schott Glas Glaskeramik für röntgenoptische Komponenten
JP2003233002A (ja) * 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
EP1446813B1 (de) * 2002-05-10 2010-11-10 Carl Zeiss SMT AG Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion
JP3919599B2 (ja) * 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
US6975385B2 (en) 2002-11-08 2005-12-13 Canon Kabushiki Kaisha Projection optical system and exposure apparatus
WO2004066287A1 (en) 2003-01-23 2004-08-05 Lg Electronics Inc. Recording medium with an optional information and apparatus and methods for forming, recording, reproducing and controlling reproduction of the recording medium
US20040148790A1 (en) * 2003-02-04 2004-08-05 Taiwan Semiconductor Manufacturing Company Time alarm system in detecting scanner/step module tilt
US20040157944A1 (en) * 2003-02-07 2004-08-12 China Textile Institute Preparation method for foaming waterborne PU
DE10321103A1 (de) * 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
EP1889110A1 (en) * 2005-05-13 2008-02-20 Carl Zeiss SMT AG A six-mirror euv projection system with low incidence angles
KR100962911B1 (ko) * 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
JP5068271B2 (ja) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
DE102006014380A1 (de) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
JP5479890B2 (ja) 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102007023411A1 (de) * 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
DE102007047109A1 (de) 2007-10-01 2009-04-09 Carl Zeiss Smt Ag Optisches System, insbesondere Projektionsobjektiv der Mikrolithographie
JP2009179391A (ja) * 2008-01-31 2009-08-13 Yoshino Kogyosho Co Ltd 簡易開蓋キャップ
JP4935886B2 (ja) * 2009-12-10 2012-05-23 三菱電機株式会社 画像読取装置
DE102012202675A1 (de) * 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
US9291751B2 (en) 2013-06-17 2016-03-22 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure apparatus for projection lithography comprising such an imaging optical unit
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102015221984A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik
CN118627208B (zh) * 2024-05-11 2025-10-24 南京航空航天大学 非静力大气掠入射积分数值计算方法

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE501365C (de) 1930-07-01 Walter Stoye Verbindung, insbesondere der die Wagenkastenwaende bildenden Bleche mit dem aus I-Profilstaeben gebildeten Wagenkastengerippe, insbesondere fuer Kraftfahrzeuge
BE369232A (enExample) 1929-04-13
DE701652C (enExample) 1937-04-16 1941-01-21 Gerhard Zur Nedden
US2970518A (en) * 1958-12-29 1961-02-07 Karl F Ross Catoptric system
US3748015A (en) * 1971-06-21 1973-07-24 Perkin Elmer Corp Unit power imaging catoptric anastigmat
CH543009A (de) 1972-08-25 1973-10-15 Kuehlmoebelfabrik Alfons Laemm Einrichtung zur Verbindung baukastenartig aneinandergefügter Kühlmöbel-Baueinheiten
US4861148A (en) * 1986-03-12 1989-08-29 Matsushita Electric Industrial Co., Inc. Projection optical system for use in precise copy
US4804258A (en) * 1986-05-05 1989-02-14 Hughes Aircraft Company Four mirror afocal wide field of view optical system
EP0252734B1 (en) * 1986-07-11 2000-05-03 Canon Kabushiki Kaisha X-ray reduction projection exposure system of reflection type
US5071240A (en) * 1989-09-14 1991-12-10 Nikon Corporation Reflecting optical imaging apparatus using spherical reflectors and producing an intermediate image
US5063586A (en) * 1989-10-13 1991-11-05 At&T Bell Laboratories Apparatus for semiconductor lithography
US5315629A (en) * 1990-10-10 1994-05-24 At&T Bell Laboratories Ringfield lithography
JPH04333011A (ja) * 1991-05-09 1992-11-20 Nikon Corp 反射縮小投影光学装置
DE9110413U1 (de) 1991-08-23 1991-10-24 Remaplan Anlagenbau GmbH, 8000 München Behälter, insbesondere Komposter
US5353322A (en) * 1992-05-05 1994-10-04 Tropel Corporation Lens system for X-ray projection lithography camera
US5361292A (en) * 1993-05-11 1994-11-01 The United States Of America As Represented By The Department Of Energy Condenser for illuminating a ring field
US5410434A (en) * 1993-09-09 1995-04-25 Ultratech Stepper, Inc. Reflective projection system comprising four spherical mirrors
US5379157A (en) * 1993-12-02 1995-01-03 Hughes Aircraft Company Compact, folded wide-angle large reflective unobscured optical system
US5459771A (en) * 1994-04-01 1995-10-17 University Of Central Florida Water laser plasma x-ray point source and apparatus
JP3358097B2 (ja) * 1994-04-12 2002-12-16 株式会社ニコン Ｘ線投影露光装置
US5805365A (en) * 1995-10-12 1998-09-08 Sandia Corporation Ringfield lithographic camera
US5737137A (en) * 1996-04-01 1998-04-07 The Regents Of The University Of California Critical illumination condenser for x-ray lithography
JP3284045B2 (ja) * 1996-04-30 2002-05-20 キヤノン株式会社 Ｘ線光学装置およびデバイス製造方法
US5956192A (en) * 1997-09-18 1999-09-21 Svg Lithography Systems, Inc. Four mirror EUV projection optics
US5973826A (en) * 1998-02-20 1999-10-26 Regents Of The University Of California Reflective optical imaging system with balanced distortion
WO1999042902A2 (en) * 1998-02-20 1999-08-26 The Regents Of The University Of California Reflective optical imaging systems with balanced distortion
US6014252A (en) * 1998-02-20 2000-01-11 The Regents Of The University Of California Reflective optical imaging system

Also Published As

Publication number Publication date
TW512238B (en) 2002-12-01
US6244717B1 (en) 2001-06-12
EP1480082B1 (de) 2005-11-30
EP0962830A1 (de) 1999-12-08
DE59912871D1 (de) 2006-01-05
EP1480082A1 (de) 2004-11-24
JP2000031041A (ja) 2000-01-28
KR19990088660A (ko) 1999-12-27
DE19923609A1 (de) 1999-12-02

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