TW512238B - Reduction objective and projection exposure apparatus including the reduction objective - Google Patents

Reduction objective and projection exposure apparatus including the reduction objective Download PDF

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Publication number
TW512238B
TW512238B TW088108884A TW88108884A TW512238B TW 512238 B TW512238 B TW 512238B TW 088108884 A TW088108884 A TW 088108884A TW 88108884 A TW88108884 A TW 88108884A TW 512238 B TW512238 B TW 512238B
Authority
TW
Taiwan
Prior art keywords
mirror
objective lens
item
scope
patent application
Prior art date
Application number
TW088108884A
Other languages
English (en)
Chinese (zh)
Inventor
Udo Dr Dinger
Original Assignee
Zeiss Stiftung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Stiftung filed Critical Zeiss Stiftung
Application granted granted Critical
Publication of TW512238B publication Critical patent/TW512238B/zh

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02—Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00—Optical: systems and elements
    • Y10S359/90—Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW088108884A 1998-05-30 1999-05-28 Reduction objective and projection exposure apparatus including the reduction objective TW512238B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19824442 1998-05-30

Publications (1)

Publication Number Publication Date
TW512238B true TW512238B (en) 2002-12-01

Family

ID=7869552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088108884A TW512238B (en) 1998-05-30 1999-05-28 Reduction objective and projection exposure apparatus including the reduction objective

Country Status (6)

Country Link
US (1) US6244717B1 (enExample)
EP (2) EP1480082B1 (enExample)
JP (1) JP2000031041A (enExample)
KR (1) KR100568758B1 (enExample)
DE (2) DE19923609A1 (enExample)
TW (1) TW512238B (enExample)

Cited By (2)

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US7917958B2 (en) 2003-01-23 2011-03-29 Lg Electronics Inc. Recording medium with copy protection indicating information and apparatus and methods for forming, recording, reproducing and restricting reproduction of the recording medium
CN118627208A (zh) * 2024-05-11 2024-09-10 南京航空航天大学 非静力大气掠入射积分数值计算方法

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US6947124B2 (en) 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6577443B2 (en) * 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
EP2081086B1 (en) * 2000-11-07 2013-01-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
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DE10139188A1 (de) 2001-08-16 2003-03-06 Schott Glas Glaskeramik für röntgenoptische Komponenten
JP2003233002A (ja) * 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
EP1446813B1 (de) * 2002-05-10 2010-11-10 Carl Zeiss SMT AG Reflektives roentgenmikroskop zur untersuchung von objekten mit wellenlaengen = 100nm in reflexion
JP3919599B2 (ja) * 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
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DE10321103A1 (de) * 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
EP1889110A1 (en) * 2005-05-13 2008-02-20 Carl Zeiss SMT AG A six-mirror euv projection system with low incidence angles
KR100962911B1 (ko) * 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
JP5068271B2 (ja) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
DE102006014380A1 (de) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag Projektionsobjektiv und Projektionsbelichtungsanlage mit negativer Schnittweite der Eintrittspupille
JP5479890B2 (ja) 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102007023411A1 (de) * 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
DE102007047109A1 (de) 2007-10-01 2009-04-09 Carl Zeiss Smt Ag Optisches System, insbesondere Projektionsobjektiv der Mikrolithographie
JP2009179391A (ja) * 2008-01-31 2009-08-13 Yoshino Kogyosho Co Ltd 簡易開蓋キャップ
JP4935886B2 (ja) * 2009-12-10 2012-05-23 三菱電機株式会社 画像読取装置
DE102012202675A1 (de) * 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
US9291751B2 (en) 2013-06-17 2016-03-22 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure apparatus for projection lithography comprising such an imaging optical unit
DE102014208770A1 (de) * 2013-07-29 2015-01-29 Carl Zeiss Smt Gmbh Projektionsoptik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen Projektionsoptik
DE102015221984A1 (de) * 2015-11-09 2017-05-11 Carl Zeiss Smt Gmbh Abbildende Optik zur Abbildung eines Objektfeldes in ein Bildfeld sowie Projektionsbelichtungsanlage mit einer derartigen abbildenden Optik

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7917958B2 (en) 2003-01-23 2011-03-29 Lg Electronics Inc. Recording medium with copy protection indicating information and apparatus and methods for forming, recording, reproducing and restricting reproduction of the recording medium
US8006308B2 (en) 2003-01-23 2011-08-23 Lg Electronics Inc. Recording medium with copy protection indicating information and apparatus and methods for forming, recording, reproducing and restricting reproduction of the recording medium
CN118627208A (zh) * 2024-05-11 2024-09-10 南京航空航天大学 非静力大气掠入射积分数值计算方法
CN118627208B (zh) * 2024-05-11 2025-10-24 南京航空航天大学 非静力大气掠入射积分数值计算方法

Also Published As

Publication number Publication date
US6244717B1 (en) 2001-06-12
EP1480082B1 (de) 2005-11-30
EP0962830A1 (de) 1999-12-08
DE59912871D1 (de) 2006-01-05
EP1480082A1 (de) 2004-11-24
JP2000031041A (ja) 2000-01-28
KR19990088660A (ko) 1999-12-27
KR100568758B1 (ko) 2006-04-06
DE19923609A1 (de) 1999-12-02

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