JP2000031041A - 縮小オブジェクティブ - Google Patents

縮小オブジェクティブ

Info

Publication number
JP2000031041A
JP2000031041A JP11150260A JP15026099A JP2000031041A JP 2000031041 A JP2000031041 A JP 2000031041A JP 11150260 A JP11150260 A JP 11150260A JP 15026099 A JP15026099 A JP 15026099A JP 2000031041 A JP2000031041 A JP 2000031041A
Authority
JP
Japan
Prior art keywords
mirror
objective
reduction
mirrors
main beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11150260A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031041A5 (enExample
Inventor
Udo Dinger
ディンガー ウド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Carl Zeiss AG
Original Assignee
Carl Zeiss SMT GmbH
Carl Zeiss AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH, Carl Zeiss AG filed Critical Carl Zeiss SMT GmbH
Publication of JP2000031041A publication Critical patent/JP2000031041A/ja
Publication of JP2000031041A5 publication Critical patent/JP2000031041A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/02Catoptric systems, e.g. image erecting and reversing system
    • G02B17/06Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
    • G02B17/0647Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
    • G02B17/0663Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors off-axis or unobscured systems in which not all of the mirrors share a common axis of rotational symmetry, e.g. at least one of the mirrors is warped, tilted or decentered with respect to the other elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70233Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S359/00Optical: systems and elements
    • Y10S359/90Methods

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP11150260A 1998-05-30 1999-05-28 縮小オブジェクティブ Pending JP2000031041A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19824442.8 1998-05-30
DE19824442 1998-05-30

Publications (2)

Publication Number Publication Date
JP2000031041A true JP2000031041A (ja) 2000-01-28
JP2000031041A5 JP2000031041A5 (enExample) 2006-03-02

Family

ID=7869552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11150260A Pending JP2000031041A (ja) 1998-05-30 1999-05-28 縮小オブジェクティブ

Country Status (6)

Country Link
US (1) US6244717B1 (enExample)
EP (2) EP1480082B1 (enExample)
JP (1) JP2000031041A (enExample)
KR (1) KR100568758B1 (enExample)
DE (2) DE19923609A1 (enExample)
TW (1) TW512238B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005525565A (ja) * 2002-05-10 2005-08-25 カール・ツァイス・エスエムティー・アーゲー 波長≦100nmで物体を検査する反射型X線顕微鏡および検査系
US7232233B2 (en) 2001-07-31 2007-06-19 Canon Kabushiki Kaisha Catoptric reduction projection optical system and exposure apparatus using the same
JP2007264636A (ja) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag 入射瞳のバック・フォーカスが負である投影対物レンズおよび投影露光装置
JP2008541439A (ja) * 2005-05-13 2008-11-20 カール ツァイス エスエムテー アーゲー 6枚の反射鏡を備えたeuv投影光学系
JP2009179391A (ja) * 2008-01-31 2009-08-13 Yoshino Kogyosho Co Ltd 簡易開蓋キャップ
JP2010063163A (ja) * 2009-12-10 2010-03-18 Mitsubishi Electric Corp 画像読取装置
JP2016525720A (ja) * 2013-07-29 2016-08-25 カール・ツァイス・エスエムティー・ゲーエムベーハー 物体視野を像視野内に結像するための投影光学ユニット及びそのような投影光学ユニットを含む投影露光装置
JP2018534639A (ja) * 2015-11-09 2018-11-22 カール・ツァイス・エスエムティー・ゲーエムベーハー 物体視野を像視野内に結像するための結像光学ユニット及びそのような結像光学ユニットを含む投影露光装置

Families Citing this family (40)

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US7186983B2 (en) 1998-05-05 2007-03-06 Carl Zeiss Smt Ag Illumination system particularly for microlithography
DE19903807A1 (de) 1998-05-05 1999-11-11 Zeiss Carl Fa Beleuchtungssystem insbesondere für die EUV-Lithographie
US6947124B2 (en) 1998-05-05 2005-09-20 Carl Zeiss Smt Ag Illumination system particularly for microlithography
US6438199B1 (en) * 1998-05-05 2002-08-20 Carl-Zeiss-Stiftung Illumination system particularly for microlithography
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US20050002090A1 (en) * 1998-05-05 2005-01-06 Carl Zeiss Smt Ag EUV illumination system having a folding geometry
US6859328B2 (en) * 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
US6577443B2 (en) * 1998-05-30 2003-06-10 Carl-Zeiss Stiftung Reduction objective for extreme ultraviolet lithography
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
TW538256B (en) 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
EP2081086B1 (en) * 2000-11-07 2013-01-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TW573234B (en) * 2000-11-07 2004-01-21 Asml Netherlands Bv Lithographic projection apparatus and integrated circuit device manufacturing method
DE10139188A1 (de) 2001-08-16 2003-03-06 Schott Glas Glaskeramik für röntgenoptische Komponenten
JP2003233002A (ja) * 2002-02-07 2003-08-22 Canon Inc 反射型投影光学系、露光装置及びデバイス製造方法
US7084412B2 (en) * 2002-03-28 2006-08-01 Carl Zeiss Smt Ag Collector unit with a reflective element for illumination systems with a wavelength of smaller than 193 nm
JP3919599B2 (ja) * 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
US6975385B2 (en) 2002-11-08 2005-12-13 Canon Kabushiki Kaisha Projection optical system and exposure apparatus
WO2004066287A1 (en) 2003-01-23 2004-08-05 Lg Electronics Inc. Recording medium with an optional information and apparatus and methods for forming, recording, reproducing and controlling reproduction of the recording medium
US20040148790A1 (en) * 2003-02-04 2004-08-05 Taiwan Semiconductor Manufacturing Company Time alarm system in detecting scanner/step module tilt
US20040157944A1 (en) * 2003-02-07 2004-08-12 China Textile Institute Preparation method for foaming waterborne PU
DE10321103A1 (de) * 2003-05-09 2004-12-02 Carl Zeiss Smt Ag Verfahren zur Vermeidung von Kontamination und EUV-Lithographievorrichtung
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
KR101150037B1 (ko) 2004-01-14 2012-07-02 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
US7463422B2 (en) 2004-01-14 2008-12-09 Carl Zeiss Smt Ag Projection exposure apparatus
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20170129271A (ko) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
KR100962911B1 (ko) * 2005-09-13 2010-06-10 칼 짜이스 에스엠테 아게 마이크로리소그라피 투영 광학 시스템, 디바이스 제작 방법 및 광학 표면을 설계하기 위한 방법
DE102005056914A1 (de) 2005-11-29 2007-05-31 Carl Zeiss Smt Ag Projektionsbelichtungsystem
JP5068271B2 (ja) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
JP5479890B2 (ja) 2006-04-07 2014-04-23 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影光学システム、装置、及び製造方法
DE102007023411A1 (de) * 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
EP1950594A1 (de) 2007-01-17 2008-07-30 Carl Zeiss SMT AG Abbildende Optik, Projektionsbelichtunsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik, Verfahren zur Herstellung eines mikrostrukturierten Bauteils mit einer derartigen Projektionsbelichtungsanlage, durch das Herstellungsverfahren gefertigtes mikrostrukturiertes Bauelement sowie Verwendung einer derartigen abbildenden Optik
DE102007047109A1 (de) 2007-10-01 2009-04-09 Carl Zeiss Smt Ag Optisches System, insbesondere Projektionsobjektiv der Mikrolithographie
DE102012202675A1 (de) * 2012-02-22 2013-01-31 Carl Zeiss Smt Gmbh Abbildende Optik sowie Projektionsbelichtungsanlage für die Projektionslithografie mit einer derartigen abbildenden Optik
US9291751B2 (en) 2013-06-17 2016-03-22 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure apparatus for projection lithography comprising such an imaging optical unit
CN118627208B (zh) * 2024-05-11 2025-10-24 南京航空航天大学 非静力大气掠入射积分数值计算方法

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7232233B2 (en) 2001-07-31 2007-06-19 Canon Kabushiki Kaisha Catoptric reduction projection optical system and exposure apparatus using the same
JP2005525565A (ja) * 2002-05-10 2005-08-25 カール・ツァイス・エスエムティー・アーゲー 波長≦100nmで物体を検査する反射型X線顕微鏡および検査系
JP2010032542A (ja) * 2002-05-10 2010-02-12 Carl Zeiss Smt Ag 波長≦100nmで物体を検査する反射型X線顕微鏡および検査系
JP2008541439A (ja) * 2005-05-13 2008-11-20 カール ツァイス エスエムテー アーゲー 6枚の反射鏡を備えたeuv投影光学系
JP2007264636A (ja) * 2006-03-27 2007-10-11 Carl Zeiss Smt Ag 入射瞳のバック・フォーカスが負である投影対物レンズおよび投影露光装置
US8810927B2 (en) 2006-03-27 2014-08-19 Carl Zeiss Smt Gmbh Projection objective and projection exposure apparatus with negative back focus of the entry pupil
JP2009179391A (ja) * 2008-01-31 2009-08-13 Yoshino Kogyosho Co Ltd 簡易開蓋キャップ
JP2010063163A (ja) * 2009-12-10 2010-03-18 Mitsubishi Electric Corp 画像読取装置
JP2016525720A (ja) * 2013-07-29 2016-08-25 カール・ツァイス・エスエムティー・ゲーエムベーハー 物体視野を像視野内に結像するための投影光学ユニット及びそのような投影光学ユニットを含む投影露光装置
US10558026B2 (en) 2013-07-29 2020-02-11 Carl Zeiss Smt Gmbh Projection optical unit for imaging an object field into an image field, and projection exposure apparatus comprising such a projection optical unit
JP2018534639A (ja) * 2015-11-09 2018-11-22 カール・ツァイス・エスエムティー・ゲーエムベーハー 物体視野を像視野内に結像するための結像光学ユニット及びそのような結像光学ユニットを含む投影露光装置

Also Published As

Publication number Publication date
TW512238B (en) 2002-12-01
US6244717B1 (en) 2001-06-12
EP1480082B1 (de) 2005-11-30
EP0962830A1 (de) 1999-12-08
DE59912871D1 (de) 2006-01-05
EP1480082A1 (de) 2004-11-24
KR19990088660A (ko) 1999-12-27
KR100568758B1 (ko) 2006-04-06
DE19923609A1 (de) 1999-12-02

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