KR100528090B1 - 미세한 균일 구조 및 조직을 가지는 금속 물품 및 그의 제조방법 - Google Patents
미세한 균일 구조 및 조직을 가지는 금속 물품 및 그의 제조방법 Download PDFInfo
- Publication number
- KR100528090B1 KR100528090B1 KR10-2000-7000210A KR20007000210A KR100528090B1 KR 100528090 B1 KR100528090 B1 KR 100528090B1 KR 20007000210 A KR20007000210 A KR 20007000210A KR 100528090 B1 KR100528090 B1 KR 100528090B1
- Authority
- KR
- South Korea
- Prior art keywords
- sputtering target
- particle size
- billet
- average particle
- grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J3/00—Lubricating during forging or pressing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
- C21D8/02—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
- C21D8/0221—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the working steps
- C21D8/0236—Cold rolling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/38—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling sheets of limited length, e.g. folded sheets, superimposed sheets, pack rolling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/02—Hardening articles or materials formed by forging or rolling, with no further heating beyond that required for the formation
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D8/00—Modifying the physical properties by deformation combined with, or followed by, heat treatment
- C21D8/02—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips
- C21D8/0247—Modifying the physical properties by deformation combined with, or followed by, heat treatment during manufacturing of plates or strips characterised by the heat treatment
- C21D8/0273—Final recrystallisation annealing
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Forging (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5221897P | 1997-07-11 | 1997-07-11 | |
| US60/052,218 | 1997-07-11 | ||
| US09/098,761 | 1998-06-17 | ||
| US09/098,761 US6569270B2 (en) | 1997-07-11 | 1998-06-17 | Process for producing a metal article |
| US9/098,761 | 1998-06-17 | ||
| PCT/US1998/013447 WO1999002743A1 (en) | 1997-07-11 | 1998-06-26 | Metal article with fine uniform structures and textures and process of making same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010021652A KR20010021652A (ko) | 2001-03-15 |
| KR100528090B1 true KR100528090B1 (ko) | 2005-11-15 |
Family
ID=26730344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2000-7000210A Expired - Fee Related KR100528090B1 (ko) | 1997-07-11 | 1998-06-26 | 미세한 균일 구조 및 조직을 가지는 금속 물품 및 그의 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6569270B2 (enExample) |
| EP (1) | EP1027463A4 (enExample) |
| JP (1) | JP2003532791A (enExample) |
| KR (1) | KR100528090B1 (enExample) |
| WO (1) | WO1999002743A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101201577B1 (ko) * | 2007-08-06 | 2012-11-14 | 에이치. 씨. 스타아크 아이앤씨 | 향상된 조직 균일성을 가진 내화 금속판 |
| KR101226483B1 (ko) * | 2010-05-24 | 2013-01-25 | 국방과학연구소 | 균질하고 초미립의 미세조직을 갖는 구리 라이너 제조 방법 |
| KR101282229B1 (ko) * | 2013-03-28 | 2013-07-09 | 국방과학연구소 | 성형작약탄용 몰리브데늄 라이너의 제조방법 및 그 제조방법에 의해 제조된 성형작약탄용 몰리브데늄 라이너 |
Families Citing this family (103)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6569270B2 (en) | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
| US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
| US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| US6858102B1 (en) * | 2000-11-15 | 2005-02-22 | Honeywell International Inc. | Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets |
| US6423161B1 (en) | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
| KR20020070443A (ko) | 1999-11-24 | 2002-09-09 | 허니웰 인터내셔널 인코포레이티드 | 전도성 상호연결장치 |
| US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
| US6878250B1 (en) | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
| US6451222B1 (en) | 1999-12-16 | 2002-09-17 | Honeywell International Inc. | Ferroelectric composition, ferroelectric vapor deposition target and method of making a ferroelectric vapor deposition target |
| US7517417B2 (en) | 2000-02-02 | 2009-04-14 | Honeywell International Inc. | Tantalum PVD component producing methods |
| US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
| US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
| US6585870B1 (en) * | 2000-04-28 | 2003-07-01 | Honeywell International Inc. | Physical vapor deposition targets having crystallographic orientations |
| AU2001265309A1 (en) * | 2000-06-02 | 2001-12-17 | Honeywell International, Inc. | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
| US20030227068A1 (en) * | 2001-05-31 | 2003-12-11 | Jianxing Li | Sputtering target |
| US6946039B1 (en) | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
| US6887356B2 (en) * | 2000-11-27 | 2005-05-03 | Cabot Corporation | Hollow cathode target and methods of making same |
| CN1257998C (zh) * | 2001-01-11 | 2006-05-31 | 卡伯特公司 | 钽和铌的坯料及其制造方法 |
| HUP0303269A3 (en) * | 2001-02-20 | 2004-05-28 | H C Starck Inc Newton | Refractory metal plates with uniform texture and methods of making the same |
| AU2002236551A1 (en) * | 2001-07-19 | 2003-03-03 | Honeywell International Inc. | Sputtering targets, sputter reactors, methods of forming cast ingots, and methods of forming metallic articles |
| US8562664B2 (en) | 2001-10-25 | 2013-10-22 | Advanced Cardiovascular Systems, Inc. | Manufacture of fine-grained material for use in medical devices |
| EP1444376B1 (en) * | 2001-11-13 | 2010-10-06 | Praxair S.T. Technology, Inc. | High-purity aluminum sputter targets |
| US20050000821A1 (en) * | 2001-11-16 | 2005-01-06 | White Tamara L | Anodes for electroplating operations, and methods of forming materials over semiconductor substrates |
| EP1471164B1 (en) * | 2002-01-30 | 2013-01-23 | JX Nippon Mining & Metals Corporation | Copper alloy sputtering target and method for manufacturing the target |
| US7416697B2 (en) | 2002-06-14 | 2008-08-26 | General Electric Company | Method for preparing a metallic article having an other additive constituent, without any melting |
| WO2004001093A1 (ja) * | 2002-06-24 | 2003-12-31 | Kobelco Research Institute, Inc. | 銀合金スパッタリングターゲットとその製造方法 |
| US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
| US7235143B2 (en) * | 2002-08-08 | 2007-06-26 | Praxair S.T. Technology, Inc. | Controlled-grain-precious metal sputter targets |
| US20040123920A1 (en) * | 2002-10-08 | 2004-07-01 | Thomas Michael E. | Homogenous solid solution alloys for sputter-deposited thin films |
| JP4794802B2 (ja) | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
| US7897103B2 (en) * | 2002-12-23 | 2011-03-01 | General Electric Company | Method for making and using a rod assembly |
| US6921470B2 (en) * | 2003-02-13 | 2005-07-26 | Cabot Corporation | Method of forming metal blanks for sputtering targets |
| US20040186810A1 (en) * | 2003-02-14 | 2004-09-23 | Michaluk Christopher A. | Method of supplying sputtering targets to fabricators and other users |
| EP1618586B1 (en) * | 2003-04-23 | 2017-06-21 | H.C. Starck Inc. | Molybdenum alloy x-ray targets having uniform grain structure |
| US20040221929A1 (en) | 2003-05-09 | 2004-11-11 | Hebda John J. | Processing of titanium-aluminum-vanadium alloys and products made thereby |
| US7228722B2 (en) * | 2003-06-09 | 2007-06-12 | Cabot Corporation | Method of forming sputtering articles by multidirectional deformation |
| JP2007523993A (ja) * | 2003-06-20 | 2007-08-23 | キャボット コーポレイション | スパッタターゲットをバッキングプレートに結合させるための方法及び設計 |
| JP4384453B2 (ja) * | 2003-07-16 | 2009-12-16 | 株式会社神戸製鋼所 | Ag系スパッタリングターゲット及びその製造方法 |
| CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
| US6964600B2 (en) * | 2003-11-21 | 2005-11-15 | Praxair Technology, Inc. | High selectivity colloidal silica slurry |
| US20050236076A1 (en) * | 2003-12-22 | 2005-10-27 | Michaluk Christopher A | High integrity sputtering target material and method for producing bulk quantities of same |
| US20050252268A1 (en) * | 2003-12-22 | 2005-11-17 | Michaluk Christopher A | High integrity sputtering target material and method for producing bulk quantities of same |
| JP4409572B2 (ja) * | 2004-03-01 | 2010-02-03 | 日鉱金属株式会社 | Ni−Pt合金及び同合金ターゲット |
| JP4980883B2 (ja) * | 2004-03-26 | 2012-07-18 | ハー ツェー シュタルク インコーポレイテッド | 高融点金属ポット |
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| US20060042728A1 (en) * | 2004-08-31 | 2006-03-02 | Brad Lemon | Molybdenum sputtering targets |
| US7531021B2 (en) | 2004-11-12 | 2009-05-12 | General Electric Company | Article having a dispersion of ultrafine titanium boride particles in a titanium-base matrix |
| US7998287B2 (en) | 2005-02-10 | 2011-08-16 | Cabot Corporation | Tantalum sputtering target and method of fabrication |
| US20060201589A1 (en) * | 2005-03-11 | 2006-09-14 | Honeywell International Inc. | Components comprising metallic material, physical vapor deposition targets, thin films, and methods of forming metallic components |
| US20080274369A1 (en) * | 2005-04-21 | 2008-11-06 | Lee Eal H | Novel Ruthenium-Based Materials and Ruthenium Alloys, Their Use in Vapor Deposition or Atomic Layer Deposition and Films Produced Therefrom |
| US20060259126A1 (en) * | 2005-05-05 | 2006-11-16 | Jason Lenz | Medical devices and methods of making the same |
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| US20070251818A1 (en) * | 2006-05-01 | 2007-11-01 | Wuwen Yi | Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets |
| US20070251819A1 (en) * | 2006-05-01 | 2007-11-01 | Kardokus Janine K | Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets |
| US9358000B2 (en) | 2006-12-15 | 2016-06-07 | Ethicon, Inc. | Tungsten alloy suture needles |
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| JP5364202B2 (ja) * | 2010-04-26 | 2013-12-11 | Jx日鉱日石金属株式会社 | Sb−Te基合金焼結体スパッタリングターゲット |
| US10207312B2 (en) | 2010-06-14 | 2019-02-19 | Ati Properties Llc | Lubrication processes for enhanced forgeability |
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| US10513755B2 (en) | 2010-09-23 | 2019-12-24 | Ati Properties Llc | High strength alpha/beta titanium alloy fasteners and fastener stock |
| US8789254B2 (en) | 2011-01-17 | 2014-07-29 | Ati Properties, Inc. | Modifying hot workability of metal alloys via surface coating |
| US8652400B2 (en) | 2011-06-01 | 2014-02-18 | Ati Properties, Inc. | Thermo-mechanical processing of nickel-base alloys |
| JP5159962B1 (ja) | 2012-01-10 | 2013-03-13 | 三菱マテリアル株式会社 | 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法 |
| US9050647B2 (en) | 2013-03-15 | 2015-06-09 | Ati Properties, Inc. | Split-pass open-die forging for hard-to-forge, strain-path sensitive titanium-base and nickel-base alloys |
| US9869003B2 (en) | 2013-02-26 | 2018-01-16 | Ati Properties Llc | Methods for processing alloys |
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| KR101201577B1 (ko) * | 2007-08-06 | 2012-11-14 | 에이치. 씨. 스타아크 아이앤씨 | 향상된 조직 균일성을 가진 내화 금속판 |
| US9095885B2 (en) | 2007-08-06 | 2015-08-04 | H.C. Starck Inc. | Refractory metal plates with improved uniformity of texture |
| US9767999B2 (en) | 2007-08-06 | 2017-09-19 | H.C. Starck Inc. | Refractory metal plates |
| KR101226483B1 (ko) * | 2010-05-24 | 2013-01-25 | 국방과학연구소 | 균질하고 초미립의 미세조직을 갖는 구리 라이너 제조 방법 |
| KR101282229B1 (ko) * | 2013-03-28 | 2013-07-09 | 국방과학연구소 | 성형작약탄용 몰리브데늄 라이너의 제조방법 및 그 제조방법에 의해 제조된 성형작약탄용 몰리브데늄 라이너 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20010001401A1 (en) | 2001-05-24 |
| US6569270B2 (en) | 2003-05-27 |
| JP2003532791A (ja) | 2003-11-05 |
| KR20010021652A (ko) | 2001-03-15 |
| EP1027463A1 (en) | 2000-08-16 |
| WO1999002743A1 (en) | 1999-01-21 |
| EP1027463A4 (en) | 2004-06-16 |
| US6238494B1 (en) | 2001-05-29 |
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