KR100512295B1 - 미세균일 구조 및 조직을 갖는 금속재 및 그 제조방법 - Google Patents
미세균일 구조 및 조직을 갖는 금속재 및 그 제조방법 Download PDFInfo
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- KR100512295B1 KR100512295B1 KR10-2000-7014206A KR20007014206A KR100512295B1 KR 100512295 B1 KR100512295 B1 KR 100512295B1 KR 20007014206 A KR20007014206 A KR 20007014206A KR 100512295 B1 KR100512295 B1 KR 100512295B1
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- South Korea
- Prior art keywords
- metal material
- billet
- forging
- grain size
- microns
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 15
- 239000002184 metal Substances 0.000 title claims abstract description 14
- 230000008569 process Effects 0.000 title claims description 13
- 239000007769 metal material Substances 0.000 claims abstract description 39
- 238000005096 rolling process Methods 0.000 claims abstract description 37
- 238000005242 forging Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000001953 recrystallisation Methods 0.000 claims description 24
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- 238000000137 annealing Methods 0.000 claims description 18
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
- 238000005477 sputtering target Methods 0.000 claims description 17
- 230000003068 static effect Effects 0.000 claims description 15
- 238000009721 upset forging Methods 0.000 claims description 15
- 239000000314 lubricant Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 238000005097 cold rolling Methods 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910001111 Fine metal Inorganic materials 0.000 abstract 1
- 230000009467 reduction Effects 0.000 description 15
- 239000002245 particle Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 239000004809 Teflon Substances 0.000 description 6
- 229920006362 Teflon® Polymers 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 239000011859 microparticle Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000005266 casting Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005098 hot rolling Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Forging (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Abstract
Description
ε | 5% | 10% | 15% | 20% | 25% |
Φ/H | 36 | 16 | 9.7 | 6.5 | 4.6 |
(단위 : ppm) | |||
원소 | 조성비 | 원소 | 조성비 |
C | 10 | Ca | <5 |
O | 15 | Fe | 15 |
N | 15 | Mg | <5 |
H | <5 | Mn | 40 |
K | 0.001 | Mo | 40 |
Li | 0.001 | Nb | 150 |
Na | 0.001 | Ni | <5 |
Al | <5 | Si | 15 |
B | 2 | Sn | <5 |
Cu | <5 | Ti | 5 |
Co | <5 | W | 25 |
Cr | <5 | Zr | <5 |
빌렛 높이, Ho | 7" | 6" | 4.5" |
빌렛 직경, Do | 3.75" | 3.75" | 4.5 |
Mo | 1.86 | 1.6 | 1 |
Claims (31)
- 99.95중량% 이상의 탄탈을 포함하여 구성되며, 그 표면을 가로질러 균일한 {100} 결정 배향을 갖는 금속재.
- 제 1항에 있어서, 그 표면에서 50미크론미만의 최대 결정립 크기를 가지는 것을 특징으로 하는 금속재.
- 제 1항에 있어서, 평균 결정립 크기가 25미크론인 것을 특징으로 하는 금속재.
- 제 1항에 있어서, 무마찰 단조 빌렛으로 부터 제조된 물품인 것을 특징으로 하는 금속재.
- 제 1항에 있어서, 전체 두께에 걸쳐 균일한 {100} 결정배향을 가지는 것을 특징으로 하는 금속재.
- 제 1항에 있어서, 전체 두께에 걸쳐 균일한 {100} 결정배향을 갖고 있으며; 그리고 전체 두께에 걸쳐 50미크론미만의 최대 결정립 크기를 가지는 것을 특징으로 하는 금속재.
- 99.95중량% 이상의 탄탈을 포함하여 구성되며, 그 표면을 가로질러 균일한 {100} 결정배향을 가지며 그 표면에서의 최대 결정립 크기가 50미크론미만인 금속재.
- 제 7항에 있어서, 무마찰 단조 빌렛으로부터 제조된 물품인 것을 특징으로 하는 금속재.
- 99.95중량% 이상의 탄탈을 포함하여 구성되고, 전체 두께에 걸쳐 균일한 {100} 결정배향을 갖는 금속재.
- 제 9항에 있어서, 전체 두께에 걸쳐 50미크론미만의 최대 결정립 크기를 가지는 것을 특징으로 하는 금속재.
- 제 10항에 있어서, 전체 두께에 걸쳐 50미크론미만의 평균 결정립 크기를 가지는 것을 특징으로 하는 금속재.
- 제 1항에 있어서, 그 표면에서 50미크론미만의 평균 결정립 크기를 가지는 것을 특징으로 하는 금속재.
- 99.95중량% 이상의 탄탈을 포함하여 구성되며, 평균 결정립 크기가 50미크론미만인 금속재.
- 제 13항에 있어서, 상기 금속재는 무마찰 단조 빌렛으로부터 제조된 물품인 것을 특징으로 하는 금속재.
- 삭제
- 금속재료를 준비하는 단계;상기 금속재료의 정적 재결정화 최소 온도를 결정하는 단계; 및상기 금속재료를 업셋단조하여 금속재를 제조하는 단계를 포함하는 금속재의 제조방법으로서, 상기 업셋 단조는 상기 금속재료 조성의 정적재결정화의 최소온도 이하의 온도에서 실시되고, 단조동안 상기 금속재료를 단조도구로부터 완전히 분리시키기 위해 윤활제를 이용하는 것을 포함하는 것을 특징으로 하는 금속재의 제조방법.
- 제 16항에 있어서, 상기 윤활제에는 폴리테트라플루오르에틸렌 또는 폴리우레탄이 포함되는 것을 특징으로 하는 금속재의 제조방법.
- 제 16항에 있어서, 상기 금속재를 스퍼터링 타겟으로 제조하는 공정을 더 포함하고, 상기 금속재를 스퍼터링 타겟으로 제조하는 과정이 업셋 단조동안 일어나는 것을 특징으로 하는 금속재의 제조방법.
- 삭제
- 제 16항에 있어서, 상기 금속재를 스퍼터링 타겟으로 제조하는 과정을 더 포함하고, 상기 금속재를 스퍼터링 타겟으로 제조하는 공정에 업셋 단조 이후에 금속재를 추가 가공하는 공정이 더 포함되고, 상기 추가적인 공정에 절단과 단조 중 어느 하나 또는 양자가 모두 포함되는 것을 특징으로 하는 금속재의 제조방법.
- 제 20항에 있어서, 상기 추가적인 공정은 재결정소둔을 포함하는 것을 특징으로 하는 금속재 제조방법.
- 제 16항에 있어서, 상기 금속재는 Al, Ti, Ta, Cu, Nb, Ni, Mo, Au, Ag, Re 및 Pt 중 1종이상을 포함하는 것을 특징으로 하는 금속재의 제조방법.
- 99.95중량% 이상의 탄탈을 포함하고 표면을 갖는 금속재를 제조하는 방법에 있어서,99.95중량% 이상의 탄탈을 함유하는 조성으로 구성되는 빌렛을 준비하는 단계;상기 조성의 정적 재결정화 최소 온도를 결정하는 단계;단조가공된 빌렛을 형성하기 위하여 무마찰-업셋 단조를 하는 단계로서, 상기 업셋 단조가 상기 빌렛 조성의 상기 정적 재결정화 최소온도 이하의 온도에서 수행되고 상기 업셋 단조동안 상기 빌렛을 단조도구로부터 완전히 분리시키기 위해 윤활제를 이용하는 단계; 그리고상기 업셋단조 후, 상기 빌렛을 냉간 압연하여 99.95중량% 이상의 탄탈륨을 함유하고 표면을 가지는 금속재를 제조하는 단계를 포함하는 금속재의 제조방법으로서;상기 표면이 균일한 {100} 결정 집합조직과 50미크론 미만의 평균 결정립 크기를 가지는 것을 특징으로 하는 금속재의 제조방법.
- 제 23항에 있어서, 상기 윤활제는 폴리테트라플루오르에틸렌 또는 폴리우레탄인 것을 특징으로 하는 금속재의 제조방법.
- 제 23항에 있어서, 상기 압연이 2 또는 4 방향으로 수행되어 스퍼터링 타겟을 제조하는 것을 특징으로 하는 금속재의 제조방법.
- 삭제
- 제 25항에 있어서, 업셋 단조 이후에 금속재를 추가적으로 가공하는 공정에 의해 금속재를 스퍼터링 타겟으로 제조하는 금속재의 제조방법으로서, 상기 추가적인 공정에 절단과 소둔 중 하나 또는 양자 모두가 포함되는 것을 특징으로 하는 금속재의 제조방법.
- 제 27항에 있어서, 상기 추가적인 공정은 재결정소둔을 포함하는 것을 특징으로 하는 금속재의 제조방법.
- 제 23항에 있어서, 상기 금속재 표면은 50미크론 미만의 최대 결정립 크기를 가지는 것을 특징으로 하는 금속재의 제조방법.
- 제 23항에 있어서, 상기 금속제품은 전체 두께에 걸쳐 평균 결정립 크기가 50미크론 미만인 것을 특징으로 하는 금속재의 제조방법.
- 제 23항에 있어서, 상기 금속재는 전체 두께에 걸쳐 전체 결정립 크기가 25 미크론 미만인 것을 특징으로 하는 금속재의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/098,760 US6348139B1 (en) | 1998-06-17 | 1998-06-17 | Tantalum-comprising articles |
US09/098,760 | 1998-06-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010071476A KR20010071476A (ko) | 2001-07-28 |
KR100512295B1 true KR100512295B1 (ko) | 2005-09-05 |
Family
ID=22270767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-7014206A KR100512295B1 (ko) | 1998-06-17 | 1998-09-08 | 미세균일 구조 및 조직을 갖는 금속재 및 그 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (3) | US6348139B1 (ko) |
EP (1) | EP1088115A4 (ko) |
JP (1) | JP2002518593A (ko) |
KR (1) | KR100512295B1 (ko) |
CN (1) | CN1283830C (ko) |
TW (1) | TW515848B (ko) |
WO (1) | WO1999066100A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20220090356A (ko) * | 2020-12-21 | 2022-06-29 | 한국재료연구원 | 정적 재결정법을 이용한 금속의 강도 강화방법 |
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---|---|---|---|---|
US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
US6323055B1 (en) | 1998-05-27 | 2001-11-27 | The Alta Group, Inc. | Tantalum sputtering target and method of manufacture |
US6348139B1 (en) | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
US20040072009A1 (en) * | 1999-12-16 | 2004-04-15 | Segal Vladimir M. | Copper sputtering targets and methods of forming copper sputtering targets |
US6878250B1 (en) * | 1999-12-16 | 2005-04-12 | Honeywell International Inc. | Sputtering targets formed from cast materials |
US6331233B1 (en) | 2000-02-02 | 2001-12-18 | Honeywell International Inc. | Tantalum sputtering target with fine grains and uniform texture and method of manufacture |
US7517417B2 (en) * | 2000-02-02 | 2009-04-14 | Honeywell International Inc. | Tantalum PVD component producing methods |
JP2001303240A (ja) * | 2000-04-26 | 2001-10-31 | Toshiba Corp | スパッタリングターゲット |
KR100815034B1 (ko) | 2000-05-22 | 2008-03-18 | 캐보트 코포레이션 | 고순도 니오븀과 이를 함유하는 제품 및 이를 제조하는 방법 |
AU2001265309A1 (en) * | 2000-06-02 | 2001-12-17 | Honeywell International, Inc. | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
JP4825345B2 (ja) * | 2000-08-24 | 2011-11-30 | 株式会社東芝 | スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法 |
CN1257998C (zh) * | 2001-01-11 | 2006-05-31 | 卡伯特公司 | 钽和铌的坯料及其制造方法 |
MXPA03007490A (es) * | 2001-02-20 | 2004-09-06 | Starck H C Inc | Chapas de metal refractario con textura uniforme y metodos de hacerlas. |
US6770154B2 (en) | 2001-09-18 | 2004-08-03 | Praxair S.T. Technology, Inc. | Textured-grain-powder metallurgy tantalum sputter target |
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EP1088115A4 (en) | 2005-03-30 |
US20020063056A1 (en) | 2002-05-30 |
CN1283830C (zh) | 2006-11-08 |
EP1088115A1 (en) | 2001-04-04 |
JP2002518593A (ja) | 2002-06-25 |
KR20010071476A (ko) | 2001-07-28 |
CN1307646A (zh) | 2001-08-08 |
WO1999066100A1 (en) | 1999-12-23 |
TW515848B (en) | 2003-01-01 |
US20020153248A1 (en) | 2002-10-24 |
US6348139B1 (en) | 2002-02-19 |
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