KR100526445B1 - 웨이퍼 패시베이션 구조 - Google Patents

웨이퍼 패시베이션 구조 Download PDF

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Publication number
KR100526445B1
KR100526445B1 KR10-2005-7010038A KR20057010038A KR100526445B1 KR 100526445 B1 KR100526445 B1 KR 100526445B1 KR 20057010038 A KR20057010038 A KR 20057010038A KR 100526445 B1 KR100526445 B1 KR 100526445B1
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Prior art keywords
dielectric layer
layer
dielectric
passivation structure
substrate
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English (en)
Korean (ko)
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KR20050065684A (ko
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마크 티 보어
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인텔 코오퍼레이션
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S438/00Semiconductor device manufacturing: process
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  • Wire Bonding (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2005-7010038A 1997-12-31 1998-11-16 웨이퍼 패시베이션 구조 Expired - Lifetime KR100526445B1 (ko)

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US09/002,178 1997-12-31
US09/002,178 US6875681B1 (en) 1997-12-31 1997-12-31 Wafer passivation structure and method of fabrication
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US20050158978A1 (en) 2005-07-21
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US6875681B1 (en) 2005-04-05
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US7145235B2 (en) 2006-12-05
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