KR100512835B1 - 칩 적층형 반도체 장치 - Google Patents

칩 적층형 반도체 장치 Download PDF

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Publication number
KR100512835B1
KR100512835B1 KR10-2002-0029835A KR20020029835A KR100512835B1 KR 100512835 B1 KR100512835 B1 KR 100512835B1 KR 20020029835 A KR20020029835 A KR 20020029835A KR 100512835 B1 KR100512835 B1 KR 100512835B1
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KR
South Korea
Prior art keywords
chip
substrate
terminals
electrically connected
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2002-0029835A
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English (en)
Korean (ko)
Other versions
KR20020092193A (ko
Inventor
오야마가쯔히꼬
엔도미쯔요시
다꾸보찌아끼
야마자끼다까시
이모또다까시
Original Assignee
가부시끼가이샤 도시바
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Publication date
Application filed by 가부시끼가이샤 도시바 filed Critical 가부시끼가이샤 도시바
Publication of KR20020092193A publication Critical patent/KR20020092193A/ko
Application granted granted Critical
Publication of KR100512835B1 publication Critical patent/KR100512835B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5382—Adaptable interconnections, e.g. for engineering changes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR10-2002-0029835A 2001-06-01 2002-05-29 칩 적층형 반도체 장치 Expired - Fee Related KR100512835B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001167185A JP4109839B2 (ja) 2001-06-01 2001-06-01 半導体装置
JPJP-P-2001-00167185 2001-06-01

Publications (2)

Publication Number Publication Date
KR20020092193A KR20020092193A (ko) 2002-12-11
KR100512835B1 true KR100512835B1 (ko) 2005-09-07

Family

ID=19009610

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0029835A Expired - Fee Related KR100512835B1 (ko) 2001-06-01 2002-05-29 칩 적층형 반도체 장치

Country Status (5)

Country Link
US (1) US6861738B2 (enExample)
JP (1) JP4109839B2 (enExample)
KR (1) KR100512835B1 (enExample)
CN (1) CN100524744C (enExample)
TW (1) TW541585B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095799A (ja) 2002-08-30 2004-03-25 Toshiba Corp 半導体装置およびその製造方法
JP4799157B2 (ja) * 2005-12-06 2011-10-26 エルピーダメモリ株式会社 積層型半導体装置
CN100547784C (zh) * 2005-12-16 2009-10-07 晨星半导体股份有限公司 多芯片封装结构的内连线
JP2009026884A (ja) 2007-07-18 2009-02-05 Elpida Memory Inc 回路モジュール及び電気部品
US11056463B2 (en) * 2014-12-18 2021-07-06 Sony Corporation Arrangement of penetrating electrode interconnections
US11824009B2 (en) * 2018-12-10 2023-11-21 Preferred Networks, Inc. Semiconductor device and data transferring method for semiconductor device
JPWO2023119450A1 (enExample) * 2021-12-21 2023-06-29

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107205A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd 積層半導体モジュール
WO1998027587A1 (en) * 1996-12-19 1998-06-25 Telefonaktiebolaget Lm Ericsson (Publ) A packaging structure for integrated circuits
JPH11135711A (ja) * 1997-10-30 1999-05-21 Nec Corp スタックモジュール用インターポーザとスタックモジュール
KR19990052644A (ko) * 1997-12-23 1999-07-15 구본준 반도체 패키지 및 그 제조방법 및 그 적층방법
KR20000011420U (ko) * 1998-12-02 2000-07-05 김영환 적층형 반도체 패키지
KR20010034154A (ko) * 1998-01-15 2001-04-25 인피니언 테크놀로지스 아게 다수의 기판층과 적어도 하나의 반도체 칩을 가진 반도체소자 및 그의 제조 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04284661A (ja) 1991-03-13 1992-10-09 Toshiba Corp 半導体装置
KR100204753B1 (ko) * 1996-03-08 1999-06-15 윤종용 엘오씨 유형의 적층 칩 패키지
JP3519924B2 (ja) * 1997-11-21 2004-04-19 ローム株式会社 半導体装置の構造及びその製造方法
JP3186700B2 (ja) * 1998-06-24 2001-07-11 日本電気株式会社 半導体装置及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10107205A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd 積層半導体モジュール
WO1998027587A1 (en) * 1996-12-19 1998-06-25 Telefonaktiebolaget Lm Ericsson (Publ) A packaging structure for integrated circuits
JPH11135711A (ja) * 1997-10-30 1999-05-21 Nec Corp スタックモジュール用インターポーザとスタックモジュール
KR19990052644A (ko) * 1997-12-23 1999-07-15 구본준 반도체 패키지 및 그 제조방법 및 그 적층방법
KR20010034154A (ko) * 1998-01-15 2001-04-25 인피니언 테크놀로지스 아게 다수의 기판층과 적어도 하나의 반도체 칩을 가진 반도체소자 및 그의 제조 방법
KR20000011420U (ko) * 1998-12-02 2000-07-05 김영환 적층형 반도체 패키지

Also Published As

Publication number Publication date
JP2002368185A (ja) 2002-12-20
KR20020092193A (ko) 2002-12-11
US6861738B2 (en) 2005-03-01
CN100524744C (zh) 2009-08-05
CN1399338A (zh) 2003-02-26
US20020180030A1 (en) 2002-12-05
JP4109839B2 (ja) 2008-07-02
TW541585B (en) 2003-07-11

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