JP4109839B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4109839B2
JP4109839B2 JP2001167185A JP2001167185A JP4109839B2 JP 4109839 B2 JP4109839 B2 JP 4109839B2 JP 2001167185 A JP2001167185 A JP 2001167185A JP 2001167185 A JP2001167185 A JP 2001167185A JP 4109839 B2 JP4109839 B2 JP 4109839B2
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JP
Japan
Prior art keywords
chip
interlayer connection
terminals
substrates
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001167185A
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English (en)
Japanese (ja)
Other versions
JP2002368185A (ja
JP2002368185A5 (enExample
Inventor
勝彦 尾山
光芳 遠藤
知章 田窪
尚 山崎
孝志 井本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001167185A priority Critical patent/JP4109839B2/ja
Priority to TW091110913A priority patent/TW541585B/zh
Priority to KR10-2002-0029835A priority patent/KR100512835B1/ko
Priority to US10/156,819 priority patent/US6861738B2/en
Priority to CNB021221596A priority patent/CN100524744C/zh
Publication of JP2002368185A publication Critical patent/JP2002368185A/ja
Publication of JP2002368185A5 publication Critical patent/JP2002368185A5/ja
Application granted granted Critical
Publication of JP4109839B2 publication Critical patent/JP4109839B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5382—Adaptable interconnections, e.g. for engineering changes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2001167185A 2001-06-01 2001-06-01 半導体装置 Expired - Fee Related JP4109839B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001167185A JP4109839B2 (ja) 2001-06-01 2001-06-01 半導体装置
TW091110913A TW541585B (en) 2001-06-01 2002-05-23 Chip-stacked semiconductor device
KR10-2002-0029835A KR100512835B1 (ko) 2001-06-01 2002-05-29 칩 적층형 반도체 장치
US10/156,819 US6861738B2 (en) 2001-06-01 2002-05-30 Laminated-chip semiconductor device
CNB021221596A CN100524744C (zh) 2001-06-01 2002-05-31 芯片层叠型半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001167185A JP4109839B2 (ja) 2001-06-01 2001-06-01 半導体装置

Publications (3)

Publication Number Publication Date
JP2002368185A JP2002368185A (ja) 2002-12-20
JP2002368185A5 JP2002368185A5 (enExample) 2005-10-27
JP4109839B2 true JP4109839B2 (ja) 2008-07-02

Family

ID=19009610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001167185A Expired - Fee Related JP4109839B2 (ja) 2001-06-01 2001-06-01 半導体装置

Country Status (5)

Country Link
US (1) US6861738B2 (enExample)
JP (1) JP4109839B2 (enExample)
KR (1) KR100512835B1 (enExample)
CN (1) CN100524744C (enExample)
TW (1) TW541585B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004095799A (ja) 2002-08-30 2004-03-25 Toshiba Corp 半導体装置およびその製造方法
JP4799157B2 (ja) * 2005-12-06 2011-10-26 エルピーダメモリ株式会社 積層型半導体装置
CN100547784C (zh) * 2005-12-16 2009-10-07 晨星半导体股份有限公司 多芯片封装结构的内连线
JP2009026884A (ja) 2007-07-18 2009-02-05 Elpida Memory Inc 回路モジュール及び電気部品
US11056463B2 (en) * 2014-12-18 2021-07-06 Sony Corporation Arrangement of penetrating electrode interconnections
US11824009B2 (en) * 2018-12-10 2023-11-21 Preferred Networks, Inc. Semiconductor device and data transferring method for semiconductor device
JPWO2023119450A1 (enExample) * 2021-12-21 2023-06-29

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04284661A (ja) 1991-03-13 1992-10-09 Toshiba Corp 半導体装置
KR100204753B1 (ko) * 1996-03-08 1999-06-15 윤종용 엘오씨 유형의 적층 칩 패키지
JPH10107205A (ja) * 1996-09-27 1998-04-24 Hitachi Ltd 積層半導体モジュール
SE511425C2 (sv) * 1996-12-19 1999-09-27 Ericsson Telefon Ab L M Packningsanordning för integrerade kretsar
JP2870530B1 (ja) * 1997-10-30 1999-03-17 日本電気株式会社 スタックモジュール用インターポーザとスタックモジュール
JP3519924B2 (ja) * 1997-11-21 2004-04-19 ローム株式会社 半導体装置の構造及びその製造方法
KR100271639B1 (ko) * 1997-12-23 2000-11-15 김영환 적층형 반도체패키지 및 그 제조방법 및 그 적층방법
DE19801312A1 (de) * 1998-01-15 1999-07-22 Siemens Ag Halbleiterbauelement mit mehreren Substratlagen und zumindest einem Halbleiterchip und einem Verfahren zum Herstellen eines solchen Halbleiterbauelementes
JP3186700B2 (ja) * 1998-06-24 2001-07-11 日本電気株式会社 半導体装置及びその製造方法
KR20000011420U (ko) * 1998-12-02 2000-07-05 김영환 적층형 반도체 패키지

Also Published As

Publication number Publication date
JP2002368185A (ja) 2002-12-20
KR100512835B1 (ko) 2005-09-07
KR20020092193A (ko) 2002-12-11
US6861738B2 (en) 2005-03-01
CN100524744C (zh) 2009-08-05
CN1399338A (zh) 2003-02-26
US20020180030A1 (en) 2002-12-05
TW541585B (en) 2003-07-11

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