KR20010060208A - 적층형 반도체 디바이스 - Google Patents
적층형 반도체 디바이스 Download PDFInfo
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- KR20010060208A KR20010060208A KR1020000062840A KR20000062840A KR20010060208A KR 20010060208 A KR20010060208 A KR 20010060208A KR 1020000062840 A KR1020000062840 A KR 1020000062840A KR 20000062840 A KR20000062840 A KR 20000062840A KR 20010060208 A KR20010060208 A KR 20010060208A
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Abstract
Description
Claims (4)
- 적층형 반도체 디바이스에 있어서,복수개의 적층형 반도체 칩을 포함하되, 각각의 반도체 칩은 반도체 칩의 전면으로부터 후면으로 관통하는 관통 전극, 상기 전면에 형성된 제1 전극, 상기 후면에 형성된 제2 전극, 및 상기 관통 전극을 통해 상기 제1 전극과 상기 제2 전극을 선택적으로 접속시키기 위해 상기 전면과 상기 후면에 형성된 와이어링 패턴을 포함하며, 인접한 두 개의 적층형 반도체 칩에 대해 하부 반도체 칩의 제1 전극은 상부 반도체 칩의 제2 전극과 인접하는 것을 특징으로 하는 적층형 반도체 디바이스.
- 제1항에 있어서, 상기 제1 및 제2 전극의 각각은 소정의 배열 패턴으로 배열된 복수개의 전극을 포함하는 것을 특징으로 하는 적층형 반도체 디바이스.
- 제2항에 있어서, 상기 소정의 배열 패턴은 매트릭스 패턴인 것을 특징으로 하는 적층형 반도체 디바이스.
- 제1항에 있어서, 상기 제1 전극은 범프(bump) 전극이고, 상기 제2 전극은 패드(pad) 전극인 것을 특징으로 하는 적층형 반도체 디바이스.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1999-304040 | 1999-10-26 | ||
JP30404099A JP2001127243A (ja) | 1999-10-26 | 1999-10-26 | 積層半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010060208A true KR20010060208A (ko) | 2001-07-06 |
KR100414839B1 KR100414839B1 (ko) | 2004-01-13 |
Family
ID=17928338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0062840A KR100414839B1 (ko) | 1999-10-26 | 2000-10-25 | 적층형 반도체 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6362529B1 (ko) |
JP (1) | JP2001127243A (ko) |
KR (1) | KR100414839B1 (ko) |
DE (1) | DE10049551A1 (ko) |
TW (1) | TW473982B (ko) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100871382B1 (ko) * | 2007-06-26 | 2008-12-02 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 스택 패키지 및 그의 제조 방법 |
KR100919860B1 (ko) * | 2007-11-26 | 2009-09-30 | 파워테크 테크놀로지 인코포레이티드 | Tsv를 가지는 반도체 칩 디바이스 및 그 제조방법 |
KR100927749B1 (ko) * | 2008-02-13 | 2009-11-20 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
KR100950759B1 (ko) * | 2008-03-07 | 2010-04-05 | 주식회사 하이닉스반도체 | 스택 패키지 |
KR100959606B1 (ko) * | 2008-03-12 | 2010-05-27 | 주식회사 하이닉스반도체 | 스택 패키지 및 그의 제조 방법 |
US8093701B2 (en) | 2002-04-16 | 2012-01-10 | Renesas Electronics Corporation | Semiconductor device manufacturing method and electronic equipment using same |
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JP4251421B2 (ja) * | 2000-01-13 | 2009-04-08 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP2002016065A (ja) * | 2000-06-29 | 2002-01-18 | Toshiba Corp | 半導体装置 |
DE10130864A1 (de) * | 2001-06-21 | 2003-01-02 | Giesecke & Devrient Gmbh | Vertikal kontaktierte, übereinander gestapelte Chips |
KR100394808B1 (ko) * | 2001-07-19 | 2003-08-14 | 삼성전자주식회사 | 웨이퍼 레벨 적층 칩 패키지 및 그 제조 방법 |
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JP3908148B2 (ja) * | 2002-10-28 | 2007-04-25 | シャープ株式会社 | 積層型半導体装置 |
TWI227550B (en) | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
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JP4401181B2 (ja) | 2003-08-06 | 2010-01-20 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
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CN103178032B (zh) | 2007-07-31 | 2017-06-20 | 英闻萨斯有限公司 | 使用穿透硅通道的半导体封装方法 |
KR100914985B1 (ko) * | 2008-01-28 | 2009-09-02 | 주식회사 하이닉스반도체 | 반도체 패키지 |
JP2009246104A (ja) | 2008-03-31 | 2009-10-22 | Kyushu Institute Of Technology | 配線用電子部品及びその製造方法 |
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US8791575B2 (en) | 2010-07-23 | 2014-07-29 | Tessera, Inc. | Microelectronic elements having metallic pads overlying vias |
US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
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US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
US8610264B2 (en) | 2010-12-08 | 2013-12-17 | Tessera, Inc. | Compliant interconnects in wafers |
FR2969374B1 (fr) * | 2010-12-16 | 2013-07-19 | St Microelectronics Crolles 2 | Procédé d'assemblage de deux circuits intégrés et structure correspondante |
CN115424980B (zh) * | 2022-11-04 | 2023-02-07 | 成都复锦功率半导体技术发展有限公司 | 一种芯片双面互连的堆叠封装方法 |
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JPH0563137A (ja) | 1991-08-30 | 1993-03-12 | Fujitsu Ltd | 半導体装置 |
US6002177A (en) * | 1995-12-27 | 1999-12-14 | International Business Machines Corporation | High density integrated circuit packaging with chip stacking and via interconnections |
JP4011695B2 (ja) * | 1996-12-02 | 2007-11-21 | 株式会社東芝 | マルチチップ半導体装置用チップおよびその形成方法 |
JP2870530B1 (ja) | 1997-10-30 | 1999-03-17 | 日本電気株式会社 | スタックモジュール用インターポーザとスタックモジュール |
DE19918671B4 (de) | 1999-04-23 | 2006-03-02 | Giesecke & Devrient Gmbh | Vertikal integrierbare Schaltung und Verfahren zu ihrer Herstellung |
-
1999
- 1999-10-26 JP JP30404099A patent/JP2001127243A/ja active Pending
-
2000
- 2000-09-13 TW TW089118672A patent/TW473982B/zh not_active IP Right Cessation
- 2000-09-22 US US09/667,587 patent/US6362529B1/en not_active Expired - Lifetime
- 2000-10-06 DE DE10049551A patent/DE10049551A1/de not_active Withdrawn
- 2000-10-25 KR KR10-2000-0062840A patent/KR100414839B1/ko active IP Right Grant
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US8093701B2 (en) | 2002-04-16 | 2012-01-10 | Renesas Electronics Corporation | Semiconductor device manufacturing method and electronic equipment using same |
KR100871382B1 (ko) * | 2007-06-26 | 2008-12-02 | 주식회사 하이닉스반도체 | 관통 실리콘 비아 스택 패키지 및 그의 제조 방법 |
US7847379B2 (en) | 2007-06-26 | 2010-12-07 | Hynix Semiconductor Inc. | Lightweight and compact through-silicon via stack package with excellent electrical connections and method for manufacturing the same |
US8343803B2 (en) | 2007-06-26 | 2013-01-01 | Hynix Semiconductor Inc. | Lightweight and compact through-silicon via stack package with excellent electrical connections and method for manufacturing the same |
KR100919860B1 (ko) * | 2007-11-26 | 2009-09-30 | 파워테크 테크놀로지 인코포레이티드 | Tsv를 가지는 반도체 칩 디바이스 및 그 제조방법 |
KR100927749B1 (ko) * | 2008-02-13 | 2009-11-20 | 앰코 테크놀로지 코리아 주식회사 | 반도체 디바이스 및 그 제조 방법 |
KR100950759B1 (ko) * | 2008-03-07 | 2010-04-05 | 주식회사 하이닉스반도체 | 스택 패키지 |
KR100959606B1 (ko) * | 2008-03-12 | 2010-05-27 | 주식회사 하이닉스반도체 | 스택 패키지 및 그의 제조 방법 |
US8049341B2 (en) | 2008-03-12 | 2011-11-01 | Hynix Semiconductor Inc. | Semiconductor package and method for manufacturing the same |
US8361838B2 (en) | 2008-03-12 | 2013-01-29 | Hynix Semiconductor Inc. | Semiconductor package and method for manufacturing the same via holes in semiconductor chip for plurality stack chips |
Also Published As
Publication number | Publication date |
---|---|
TW473982B (en) | 2002-01-21 |
DE10049551A1 (de) | 2001-05-03 |
US6362529B1 (en) | 2002-03-26 |
KR100414839B1 (ko) | 2004-01-13 |
JP2001127243A (ja) | 2001-05-11 |
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