KR100504098B1 - 실리콘 반도체웨이퍼 및 다수 반도체웨이퍼의 제조방법 - Google Patents
실리콘 반도체웨이퍼 및 다수 반도체웨이퍼의 제조방법 Download PDFInfo
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- KR100504098B1 KR100504098B1 KR10-2002-0076577A KR20020076577A KR100504098B1 KR 100504098 B1 KR100504098 B1 KR 100504098B1 KR 20020076577 A KR20020076577 A KR 20020076577A KR 100504098 B1 KR100504098 B1 KR 100504098B1
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- silicon
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- 235000012431 wafers Nutrition 0.000 title claims abstract description 174
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 112
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 112
- 239000010703 silicon Substances 0.000 title claims abstract description 112
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims description 54
- 238000005498 polishing Methods 0.000 claims abstract description 109
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- 238000012545 processing Methods 0.000 claims description 11
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- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
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- 230000000694 effects Effects 0.000 description 3
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- 239000012498 ultrapure water Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
평균 비교비용 | C1 | C2 | E |
연마스텝실리콘 웨이퍼 | 1.00 1.49 0.851.00 1.10 0.97 |
Claims (25)
- 삭제
- 삭제
- 삭제
- 삭제
- 연삭제 또는 콜로이드를 함유한 연마제를 공급하면서, 회전하며 서로 평행이며 또 연마포가 접착되게 결합된 하나의 하부 연마판과 하나의 상부 연마판간에서 최소 2㎛의 실리콘의 제거를 통하여 동시 양면 연마에 의해 복수의 실리콘 반도체 웨이퍼를 연마하는 단계를 포함하는 복수의 실리콘을 제조하는 방법으로서,복수의 반도체웨이퍼 중 소정 서브세트가 보다 낮은 연마압력을 사용하여 적어도 부분적으로 연마되며, 복수의 반도체웨이퍼 중 다른 서브세트는 보다 높은 연마압력을 사용하여 연마됨을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 청구항 6은(는) 설정등록료 납부시 포기되었습니다.제 5항에 있어서, 양면 연마시, 반도체웨이퍼는 구동캐리어의 컷아웃(cut outs)에 배치되고 기하학적통로를 따라서 이동함을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 5항에 있어서, 경도 60 ~ 90(shore A)를 가진 하부 연마포 및 상부 연마포가 사용되며, SiO2 고형물함량 1 ~ 10wt% 및 pH 9.5 ~12,5를 가진 연마제가 공급되는 것을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 5항에 있어서, 보다 낮은 연마압력을 사용하여 최소 부분적으로 연마되는 반도체웨이퍼 서브세트가 완전 연마된 반도체웨이퍼의 두께보다 1 ~ 20㎛의 작은 크기로 된 두께를 가진 캐리어를 사용하여 연마됨을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 삭제
- 청구항 10은(는) 설정등록료 납부시 포기되었습니다.제 5항에 있어서, 보다 낮은 연마압력은 예비시험에서 결정되며, 그 다음 대규모산업적 제조에 이용되는 것을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 5항에 있어서, 보다 낮은 연마압력은 0.12 ~ 0.18bar 범위임을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 5항에 있어서, 5㎛ ~ 50㎛의 실리콘이 제거될 경우, 제거된 실리콘의 최소 절반이 보다 낮은 연마압력을 사용하여 연마됨을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 5항에 있어서, 보다 낮은 연마압력을 사용하여 연마된 다수 반도체웨이퍼 서브세트의 각 반도체웨이퍼는, 앞면에 26㎜ ×8㎜의 크기를 가진 세그먼트의 표면격자를 기준으로 하여 0.13㎛이하의 최대국부평면도치(SFQRmax) 및 10㎜ ×10㎜의 크기를 가진 부분 영역(subregion)을 기준으로 하여 70㎚이하의 이상적 평면과의 앞면의 최대국부높이편차(P/V(10 ×10)max)를 가진 것을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 제 13항에 있어서, 보다 낮은 연마압력을 사용하여 연마된 실리콘 반도체웨이퍼부분 서브세트의 각 반도체웨이퍼는, 2㎜ ×2㎜의 크기를 가진 부분 영역을 기준으로 하여, 20㎚이하의 이상적 평면과의 앞면의 최대국부높이편차 (P/V(2 ×2)max)를 가진 것을 특징으로 하는 다수 실리콘 반도체웨이퍼의 제조방법.
- 실리콘 반도체웨이퍼의 제조방법에 있어서, 다음의 처리 단계가 순차적으로 실시됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법 :(a) 사실상 실리콘으로 이루어진 와이어 톱을 사용하여 단결정을 톱으로 켜는 단계:(b) 반도체웨이퍼의 앞면 및 후면으로부터 실리콘을 기계적으로 제거하는 단계; 및(c) 제 5항에 기재된 바에 따라 반도체웨이퍼의 앞면 및 후면을 동시 양면 연마하는 단계.
- 청구항 16은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 스텝(b)는 래핑스텝으로서 실시됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 청구항 17은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 스텝(b)는 연삭스텝으로서 또는 복수의 연삭스텝의 조합으로서 실시됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 청구항 18은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 가공반도체웨이퍼의 습식화학적에칭은 스텝(b)와 (c)간에서 일어남을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 청구항 19은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 반도체웨이퍼의 에지의 연마는 앞면 및 후면의 동시 연마전에, 중에, 또는 후에 실시됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 삭제
- 청구항 21은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 스텝(c)후, 최소 앞면의 표면 연마스텝이 실시되며, 그 스텝에서 그외의 표면의 평탄화가 연성 연마포를 사용하여 0.1㎛ ~ 1㎛의 물질제거에 의해 실시됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 청구항 22은(는) 설정등록료 납부시 포기되었습니다.제 15항에 있어서, 스텝(c) 또는 스텝(c)의 뒤를 이은 표면 연마후, 사실상 실리콘으로 이루어지는 에피택셜 코팅을 반도체 웨이퍼의 적어도 앞면에 제공함을특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 삭제
- 청구항 24은(는) 설정등록료 납부시 포기되었습니다.제 22항에 있어서, 에피택셜코팅은 온도 900℃ ~ 1250℃에서 침착됨을 특징으로 하는 실리콘 반도체웨이퍼의 제조방법.
- 삭제
Applications Claiming Priority (2)
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DE10159833.5 | 2001-12-06 | ||
DE10159833A DE10159833C1 (de) | 2001-12-06 | 2001-12-06 | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
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KR20030047750A KR20030047750A (ko) | 2003-06-18 |
KR100504098B1 true KR100504098B1 (ko) | 2005-07-27 |
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KR10-2002-0076577A KR100504098B1 (ko) | 2001-12-06 | 2002-12-04 | 실리콘 반도체웨이퍼 및 다수 반도체웨이퍼의 제조방법 |
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US (1) | US6861360B2 (ko) |
JP (1) | JP2003249466A (ko) |
KR (1) | KR100504098B1 (ko) |
CN (1) | CN1294629C (ko) |
DE (1) | DE10159833C1 (ko) |
TW (1) | TWI221636B (ko) |
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KR20210117393A (ko) | 2020-03-18 | 2021-09-29 | 주식회사 세정로봇 | 웨이퍼 습식 거치장치 |
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JP3838341B2 (ja) * | 2001-09-14 | 2006-10-25 | 信越半導体株式会社 | ウェーハの形状評価方法及びウェーハ並びにウェーハの選別方法 |
JP4093793B2 (ja) * | 2002-04-30 | 2008-06-04 | 信越半導体株式会社 | 半導体ウエーハの製造方法及びウエーハ |
DE10302611B4 (de) * | 2003-01-23 | 2011-07-07 | Siltronic AG, 81737 | Polierte Halbleiterscheibe und Verfahren zu deren Herstellung und Anordnung bestehend aus einer Halbleiterscheibe und einem Schild |
DE102004005702A1 (de) * | 2004-02-05 | 2005-09-01 | Siltronic Ag | Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe |
JP4647228B2 (ja) * | 2004-04-01 | 2011-03-09 | 株式会社ディスコ | ウェーハの加工方法 |
DE102006020823B4 (de) * | 2006-05-04 | 2008-04-03 | Siltronic Ag | Verfahren zur Herstellung einer polierten Halbleiterscheibe |
DE102007023970A1 (de) * | 2007-05-23 | 2008-12-04 | Aixtron Ag | Vorrichtung zum Beschichten einer Vielzahl in dichtester Packung auf einem Suszeptor angeordneter Substrate |
DE102007035266B4 (de) * | 2007-07-27 | 2010-03-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium |
JP5245319B2 (ja) * | 2007-08-09 | 2013-07-24 | 富士通株式会社 | 研磨装置及び研磨方法、基板及び電子機器の製造方法 |
DE102009030292B4 (de) * | 2009-06-24 | 2011-12-01 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
DE102009030295B4 (de) * | 2009-06-24 | 2014-05-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009048436B4 (de) | 2009-10-07 | 2012-12-20 | Siltronic Ag | Verfahren zum Schleifen einer Halbleiterscheibe |
DE102011083041B4 (de) * | 2010-10-20 | 2018-06-07 | Siltronic Ag | Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings |
CN102019574B (zh) * | 2010-12-10 | 2011-09-14 | 天津中环领先材料技术有限公司 | 超薄区熔硅抛光片的无蜡抛光工艺 |
CN102347233B (zh) * | 2011-08-14 | 2013-11-06 | 上海合晶硅材料有限公司 | 提高硅片背封时硅片厚度均匀性的方法及托盘 |
US8860040B2 (en) | 2012-09-11 | 2014-10-14 | Dow Corning Corporation | High voltage power semiconductor devices on SiC |
US9018639B2 (en) | 2012-10-26 | 2015-04-28 | Dow Corning Corporation | Flat SiC semiconductor substrate |
US9797064B2 (en) | 2013-02-05 | 2017-10-24 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion |
US9738991B2 (en) | 2013-02-05 | 2017-08-22 | Dow Corning Corporation | Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion |
US9017804B2 (en) | 2013-02-05 | 2015-04-28 | Dow Corning Corporation | Method to reduce dislocations in SiC crystal growth |
US8940614B2 (en) | 2013-03-15 | 2015-01-27 | Dow Corning Corporation | SiC substrate with SiC epitaxial film |
CN103173744A (zh) * | 2013-04-12 | 2013-06-26 | 光垒光电科技(上海)有限公司 | 一种托盘和包含该托盘的反应腔 |
US9279192B2 (en) | 2014-07-29 | 2016-03-08 | Dow Corning Corporation | Method for manufacturing SiC wafer fit for integration with power device manufacturing technology |
CN104589211B (zh) * | 2014-11-29 | 2016-09-21 | 江西洪都航空工业集团有限责任公司 | 一种超薄型垫片类零件的平面磨削加工装置及其使用加工方法 |
JP6206388B2 (ja) * | 2014-12-15 | 2017-10-04 | 信越半導体株式会社 | シリコンウェーハの研磨方法 |
JP6628646B2 (ja) * | 2016-03-11 | 2020-01-15 | Hoya株式会社 | 基板の製造方法、マスクブランクの製造方法、および転写用マスクの製造方法 |
CN108214110A (zh) * | 2016-12-14 | 2018-06-29 | 有研半导体材料有限公司 | 一种硅抛光片边缘加工工艺 |
CN116551559B (zh) * | 2023-02-28 | 2023-12-12 | 名正(浙江)电子装备有限公司 | 一种带压力传感系统的晶圆研磨抛光机 |
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- 2001-12-06 DE DE10159833A patent/DE10159833C1/de not_active Expired - Lifetime
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2002
- 2002-11-14 US US10/294,846 patent/US6861360B2/en not_active Expired - Lifetime
- 2002-12-04 KR KR10-2002-0076577A patent/KR100504098B1/ko active IP Right Grant
- 2002-12-05 JP JP2002353594A patent/JP2003249466A/ja active Pending
- 2002-12-05 TW TW091135344A patent/TWI221636B/zh not_active IP Right Cessation
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KR20210117393A (ko) | 2020-03-18 | 2021-09-29 | 주식회사 세정로봇 | 웨이퍼 습식 거치장치 |
Also Published As
Publication number | Publication date |
---|---|
KR20030047750A (ko) | 2003-06-18 |
US6861360B2 (en) | 2005-03-01 |
JP2003249466A (ja) | 2003-09-05 |
CN1294629C (zh) | 2007-01-10 |
TWI221636B (en) | 2004-10-01 |
CN1424746A (zh) | 2003-06-18 |
TW200300963A (en) | 2003-06-16 |
US20030109139A1 (en) | 2003-06-12 |
DE10159833C1 (de) | 2003-06-18 |
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