KR100420621B1 - 실리콘웨이퍼의 표면연마방법 - Google Patents
실리콘웨이퍼의 표면연마방법 Download PDFInfo
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- KR100420621B1 KR100420621B1 KR10-2001-0073285A KR20010073285A KR100420621B1 KR 100420621 B1 KR100420621 B1 KR 100420621B1 KR 20010073285 A KR20010073285 A KR 20010073285A KR 100420621 B1 KR100420621 B1 KR 100420621B1
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- Prior art keywords
- polishing
- abrasive wear
- silicon
- abrasive
- wear agent
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- 238000005498 polishing Methods 0.000 title claims abstract description 143
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 98
- 239000010703 silicon Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 67
- 235000012431 wafers Nutrition 0.000 title description 82
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 47
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 21
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 18
- 239000012498 ultrapure water Substances 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 239000004744 fabric Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 150000005846 sugar alcohols Polymers 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000003513 alkali Substances 0.000 claims description 4
- 239000003082 abrasive agent Substances 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 3
- 229920000151 polyglycol Polymers 0.000 claims description 3
- 239000010695 polyglycol Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000007547 defect Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 238000000227 grinding Methods 0.000 description 7
- 150000001298 alcohols Chemical class 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 150000002334 glycols Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000003631 wet chemical etching Methods 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 229920000570 polyether Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical group CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- CAPAZTWTGPAFQE-UHFFFAOYSA-N ethane-1,2-diol Chemical compound OCCO.OCCO CAPAZTWTGPAFQE-UHFFFAOYSA-N 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- NJTGANWAUPEOAX-UHFFFAOYSA-N molport-023-220-454 Chemical compound OCC(O)CO.OCC(O)CO NJTGANWAUPEOAX-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920006264 polyurethane film Polymers 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (11)
- 실리콘웨이퍼를 연마천으로 커버한 최소한 2개의 서로 다른 연마플레이트상에서 SiO2성분을 가진 알칼리성 연마마모제를 연속적으로 공급시키면서 연속적으로 연마시켜, 제1 연마플레이트상에서 연마할때 제거한 실리콘의 제거량이 제2 연마플레이트상에서 보다 상당히 더 높아저 그 실리콘의 총제거량이 1.5㎛을 초과하지 않도록 하는 실리콘웨이퍼의 표면연마방법에 있어서,연마마모제(1a), 그 다음으로 연마마모제(1b)와 최소한 1종의 알코올의 혼합액, 최종적으로 초순수(ultrapure water)(1c)를 제1 연마플레이트에 첨가시키고,연마마모제(2a)와 최소한 1종의 알코올의 혼합물, 그 다음으로 초순수(2b)를 제2 연마플레이트에 첨가시킴을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 표면연마는 스탁제거연마(stock-removal polishing)을 실시하는 실리콘웨이퍼의 하나의 표면상에서 실시하며, 이 표면상에서 스탁제거연마를 할때 실리콘 5㎛~25㎛을 제거시킴을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 표면연마에 사용되는 연마마모제는 SiO2함량 0.1~10wt%와 PH9~12을 가짐을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 연마마모제(1a)는 연마마모제(1b)보다 더 높은 PH를 가짐을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 연마마모제(1b) 및 (2a)는 동일하며, 연마마모제(1a)와 다름을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 연마마모제(1a)는 수중에서 SiO21~10wt%로 이루어지며 알칼리성분을 첨가한 클로이드상 혼합액을 구성하고, PH 10.5~12.0을 가지며, 그 연마마모제(1b) 및 (2a)는 수중에서 SiO20.1~5wt%로 이루어지고 최소한 1종의 알코올을 첨가한 콜로이드상 혼합액을 구성하고, PH 9.0~10.5를 가짐을 특징으로 하는 표면연마방법.
- 제 6 항에 있어서,연마마모제(1a)에 첨가한 알칼리성분은 Na2CO8, K2CO3, NaOH, KOH, NH4OH 및 테트라메틸암모늄히드록사이드로 이루어진 화합물의 그룹에서 선택한 1종 이상의 화합물 0.01~10wt%로 구성함을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 연마마모제(1a)에는 SiO2성분으로 입자직경 5~50nm을 가진 침전실리카를 포함하며, 그 연마마모제(1b) 및 (2a)에는 SiO2성분으로 입자직경 5~50nm을 가진 소성실리카를 포함함을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 연마마모제(1b) 및 (2a)에는 글리세롤, 모노머글리콜, 올리고머글리콜, 폴리글리콜 및 폴리알코올로 이루어진 화합물 및 화합물류(compound classes)의 그룹에서 선택한 최소한 1종의 다가알코올을 포함하며, 그 다가알코올 0.01~10vol.%를 사용함을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,제2 연마플레이트상에서 사용하는 연마천은 제1 연마플레이트상에서 사용한 연마천보다 더 유연함을 특징으로 하는 표면연마방법.
- 제 1 항에 있어서,그 실리콘웨이퍼의 표면연마, 클리닝 및 연마를 한 다음에는 그 실리콘웨이퍼에 에피탁셜 코팅처리를 실시함을 특징으로 하는 표면연마방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10058305A DE10058305A1 (de) | 2000-11-24 | 2000-11-24 | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
DE10058305.9 | 2000-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020040633A KR20020040633A (ko) | 2002-05-30 |
KR100420621B1 true KR100420621B1 (ko) | 2004-03-02 |
Family
ID=7664479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0073285A KR100420621B1 (ko) | 2000-11-24 | 2001-11-23 | 실리콘웨이퍼의 표면연마방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6530826B2 (ko) |
EP (1) | EP1209727B1 (ko) |
JP (1) | JP3650750B2 (ko) |
KR (1) | KR100420621B1 (ko) |
DE (2) | DE10058305A1 (ko) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4093793B2 (ja) * | 2002-04-30 | 2008-06-04 | 信越半導体株式会社 | 半導体ウエーハの製造方法及びウエーハ |
DE10258128A1 (de) * | 2002-12-12 | 2004-07-15 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
TWI244691B (en) * | 2003-05-15 | 2005-12-01 | Siltronic Ag | Process for polishing a semiconductor wafer |
JP4608856B2 (ja) * | 2003-07-24 | 2011-01-12 | 信越半導体株式会社 | ウエーハの研磨方法 |
US7214623B2 (en) * | 2003-10-13 | 2007-05-08 | International Business Machines Corporation | Planarization system and method using a carbonate containing fluid |
JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
US20050148198A1 (en) * | 2004-01-05 | 2005-07-07 | Technion Research & Development Foundation Ltd. | Texturing a semiconductor material using negative potential dissolution (NPD) |
US7402520B2 (en) * | 2004-11-26 | 2008-07-22 | Applied Materials, Inc. | Edge removal of silicon-on-insulator transfer wafer |
US20060138681A1 (en) * | 2004-12-27 | 2006-06-29 | Asml Netherlands B.V. | Substrate and lithography process using the same |
DE102005024073A1 (de) * | 2005-05-25 | 2006-11-30 | Siltronic Ag | Halbleiter-Schichtstruktur und Verfahren zur Herstellung einer Halbleiter-Schichtstruktur |
DE102005034119B3 (de) * | 2005-07-21 | 2006-12-07 | Siltronic Ag | Verfahren zum Bearbeiten einer Halbleiterscheibe, die in einer Aussparung einer Läuferscheibe geführt wird |
KR100847121B1 (ko) * | 2006-12-28 | 2008-07-18 | 주식회사 실트론 | 패드 연마용 컨디셔너 및 이를 포함하는 화학 기계적연마장치 |
JP4696086B2 (ja) * | 2007-02-20 | 2011-06-08 | 信越半導体株式会社 | シリコン単結晶ウエーハの仕上げ研磨方法及びシリコン単結晶ウエーハ |
US8323072B1 (en) * | 2007-03-21 | 2012-12-04 | 3M Innovative Properties Company | Method of polishing transparent armor |
DE102007026292A1 (de) | 2007-06-06 | 2008-12-11 | Siltronic Ag | Verfahren zur einseitigen Politur nicht strukturierter Halbleiterscheiben |
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-
2000
- 2000-11-24 DE DE10058305A patent/DE10058305A1/de not_active Withdrawn
-
2001
- 2001-10-30 US US10/021,515 patent/US6530826B2/en not_active Expired - Lifetime
- 2001-11-15 EP EP01126579A patent/EP1209727B1/de not_active Expired - Lifetime
- 2001-11-15 DE DE50100177T patent/DE50100177D1/de not_active Expired - Lifetime
- 2001-11-20 JP JP2001354832A patent/JP3650750B2/ja not_active Expired - Lifetime
- 2001-11-23 KR KR10-2001-0073285A patent/KR100420621B1/ko active IP Right Grant
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DE50100177D1 (de) | 2003-05-22 |
EP1209727A1 (de) | 2002-05-29 |
US6530826B2 (en) | 2003-03-11 |
DE10058305A1 (de) | 2002-06-06 |
EP1209727B1 (de) | 2003-04-16 |
KR20020040633A (ko) | 2002-05-30 |
JP3650750B2 (ja) | 2005-05-25 |
US20020077039A1 (en) | 2002-06-20 |
JP2002222780A (ja) | 2002-08-09 |
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