KR100498505B1 - 승압전압 발생회로 및 승압전압 발생방법 - Google Patents

승압전압 발생회로 및 승압전압 발생방법 Download PDF

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Publication number
KR100498505B1
KR100498505B1 KR10-2003-0048433A KR20030048433A KR100498505B1 KR 100498505 B1 KR100498505 B1 KR 100498505B1 KR 20030048433 A KR20030048433 A KR 20030048433A KR 100498505 B1 KR100498505 B1 KR 100498505B1
Authority
KR
South Korea
Prior art keywords
voltage
input terminal
response
generating
boosted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2003-0048433A
Other languages
English (en)
Korean (ko)
Other versions
KR20050008365A (ko
Inventor
임규남
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR10-2003-0048433A priority Critical patent/KR100498505B1/ko
Priority to US10/818,692 priority patent/US7084675B2/en
Priority to JP2004203663A priority patent/JP4723210B2/ja
Priority to DE102004035151A priority patent/DE102004035151A1/de
Publication of KR20050008365A publication Critical patent/KR20050008365A/ko
Application granted granted Critical
Publication of KR100498505B1 publication Critical patent/KR100498505B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR10-2003-0048433A 2003-07-15 2003-07-15 승압전압 발생회로 및 승압전압 발생방법 Expired - Fee Related KR100498505B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR10-2003-0048433A KR100498505B1 (ko) 2003-07-15 2003-07-15 승압전압 발생회로 및 승압전압 발생방법
US10/818,692 US7084675B2 (en) 2003-07-15 2004-04-06 Circuit and method of generating a boosted voltage
JP2004203663A JP4723210B2 (ja) 2003-07-15 2004-07-09 昇圧電圧発生回路及び昇圧電圧発生方法
DE102004035151A DE102004035151A1 (de) 2003-07-15 2004-07-13 Spannungserhöhungsschaltung und -verfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0048433A KR100498505B1 (ko) 2003-07-15 2003-07-15 승압전압 발생회로 및 승압전압 발생방법

Publications (2)

Publication Number Publication Date
KR20050008365A KR20050008365A (ko) 2005-01-21
KR100498505B1 true KR100498505B1 (ko) 2005-07-01

Family

ID=34056868

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0048433A Expired - Fee Related KR100498505B1 (ko) 2003-07-15 2003-07-15 승압전압 발생회로 및 승압전압 발생방법

Country Status (4)

Country Link
US (1) US7084675B2 (enExample)
JP (1) JP4723210B2 (enExample)
KR (1) KR100498505B1 (enExample)
DE (1) DE102004035151A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7965109B2 (en) 2006-02-27 2011-06-21 Hynix Semiconductor Inc. Level detector for a semiconductor memory apparatus

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4211741B2 (ja) * 2005-01-27 2009-01-21 株式会社デンソー 出力カットオフ回路
KR100684472B1 (ko) * 2005-02-18 2007-02-22 한국전자통신연구원 네거티브 전압 레벨 감지기
WO2008011065A2 (en) * 2006-07-17 2008-01-24 Next Jump, Inc. Communication system and method for narrowcasting
US7847617B2 (en) * 2007-12-11 2010-12-07 Elite Semiconductor Memory Technology Inc. Charge pump and method for operating the same
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100190049B1 (ko) * 1996-06-25 1999-06-01 윤종용 어레이회로 제어용 내부전압을 이용한 승압전원발생장치
JP3378457B2 (ja) * 1997-02-26 2003-02-17 株式会社東芝 半導体装置
JP2000019200A (ja) * 1998-07-01 2000-01-21 Mitsubishi Electric Corp 電位検出回路
JP3713401B2 (ja) * 1999-03-18 2005-11-09 株式会社東芝 チャージポンプ回路
JP2001126477A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体集積回路
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
JP2002270778A (ja) * 2001-03-14 2002-09-20 Toshiba Corp 半導体集積回路
US6737907B2 (en) * 2001-07-03 2004-05-18 International Business Machines Corporation Programmable DC voltage generator system
JP2004055009A (ja) * 2002-07-18 2004-02-19 Renesas Technology Corp 半導体メモリモジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7965109B2 (en) 2006-02-27 2011-06-21 Hynix Semiconductor Inc. Level detector for a semiconductor memory apparatus

Also Published As

Publication number Publication date
US7084675B2 (en) 2006-08-01
US20050013176A1 (en) 2005-01-20
DE102004035151A1 (de) 2005-02-17
JP4723210B2 (ja) 2011-07-13
JP2005050503A (ja) 2005-02-24
KR20050008365A (ko) 2005-01-21

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