JP4723210B2 - 昇圧電圧発生回路及び昇圧電圧発生方法 - Google Patents
昇圧電圧発生回路及び昇圧電圧発生方法 Download PDFInfo
- Publication number
- JP4723210B2 JP4723210B2 JP2004203663A JP2004203663A JP4723210B2 JP 4723210 B2 JP4723210 B2 JP 4723210B2 JP 2004203663 A JP2004203663 A JP 2004203663A JP 2004203663 A JP2004203663 A JP 2004203663A JP 4723210 B2 JP4723210 B2 JP 4723210B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- input terminal
- sensing signal
- boosted voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
11 抵抗
13 ノード
15 定電流源
17 比較器
30 パルス発生回路
50 ポンピング回路
100 昇圧電圧発生回路
Claims (3)
- 昇圧電圧発生回路において、
感知信号を発生する感知信号発生回路と、
前記感知信号に応答して駆動信号を発生するパルス発生回路と、
前記駆動信号に応答して半導体装置のワードラインを制御するための昇圧電圧を発生するポンピング回路と、
を具備し、
前記感知信号発生回路は、
第1入力端、基準電圧を受ける第2入力端、及び前記感知信号を出力する出力端を具備する比較器と、
前記昇圧電圧と前記第1入力端との間に接続される抵抗と、
前記第1入力端と接地電圧との間に接続される定電流源と、
を具備し、
前記比較器は、
第1インバータと、
前記第1インバータの出力信号を受けて前記感知信号を出力する第2インバータと、
前記第1入力端の電圧と前記基準電圧との差を増幅する差動増幅器と、
電源電圧と前記第1インバータの入力端とに接続され、前記差動増幅器の出力信号に応答してスイッチされるスイッチング回路と、
前記第1インバータの入力端と前記接地電圧との間に接続され、バイアス電圧によって制御される電流源と、
を具備することを特徴とする昇圧電圧発生回路。 - 前記スイッチング回路は、PMOSトランジスタであることを特徴とする請求項1に記載の昇圧電圧発生回路。
- 前記電流源は、前記電流源のゲートに供給される前記バイアス電圧ゲートに入力されて制御されるNMOSトランジスタであることを特徴とする請求項1に記載の昇圧電圧発生回路。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-048433 | 2003-07-15 | ||
KR10-2003-0048433A KR100498505B1 (ko) | 2003-07-15 | 2003-07-15 | 승압전압 발생회로 및 승압전압 발생방법 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005050503A JP2005050503A (ja) | 2005-02-24 |
JP2005050503A5 JP2005050503A5 (ja) | 2007-06-14 |
JP4723210B2 true JP4723210B2 (ja) | 2011-07-13 |
Family
ID=34056868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004203663A Expired - Fee Related JP4723210B2 (ja) | 2003-07-15 | 2004-07-09 | 昇圧電圧発生回路及び昇圧電圧発生方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7084675B2 (ja) |
JP (1) | JP4723210B2 (ja) |
KR (1) | KR100498505B1 (ja) |
DE (1) | DE102004035151A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4211741B2 (ja) * | 2005-01-27 | 2009-01-21 | 株式会社デンソー | 出力カットオフ回路 |
KR100684472B1 (ko) * | 2005-02-18 | 2007-02-22 | 한국전자통신연구원 | 네거티브 전압 레벨 감지기 |
KR100748459B1 (ko) | 2006-02-27 | 2007-08-13 | 주식회사 하이닉스반도체 | 반도체 메모리의 벌크 전압 레벨 감지 장치 |
US20110276377A1 (en) * | 2006-07-17 | 2011-11-10 | Next Jump, Inc. | Communication system and method for narrowcasting |
US7847617B2 (en) * | 2007-12-11 | 2010-12-07 | Elite Semiconductor Memory Technology Inc. | Charge pump and method for operating the same |
JP5879165B2 (ja) * | 2011-03-30 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1011967A (ja) * | 1996-06-25 | 1998-01-16 | Samsung Electron Co Ltd | アレー回路制御用の内部電圧を用いた昇圧電源電圧発生装置 |
JP2001126477A (ja) * | 1999-10-27 | 2001-05-11 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2002270778A (ja) * | 2001-03-14 | 2002-09-20 | Toshiba Corp | 半導体集積回路 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3378457B2 (ja) * | 1997-02-26 | 2003-02-17 | 株式会社東芝 | 半導体装置 |
JP2000019200A (ja) * | 1998-07-01 | 2000-01-21 | Mitsubishi Electric Corp | 電位検出回路 |
JP3713401B2 (ja) * | 1999-03-18 | 2005-11-09 | 株式会社東芝 | チャージポンプ回路 |
JP3829054B2 (ja) * | 1999-12-10 | 2006-10-04 | 株式会社東芝 | 半導体集積回路 |
US6737907B2 (en) * | 2001-07-03 | 2004-05-18 | International Business Machines Corporation | Programmable DC voltage generator system |
JP2004055009A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | 半導体メモリモジュール |
-
2003
- 2003-07-15 KR KR10-2003-0048433A patent/KR100498505B1/ko not_active IP Right Cessation
-
2004
- 2004-04-06 US US10/818,692 patent/US7084675B2/en not_active Expired - Fee Related
- 2004-07-09 JP JP2004203663A patent/JP4723210B2/ja not_active Expired - Fee Related
- 2004-07-13 DE DE102004035151A patent/DE102004035151A1/de not_active Ceased
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1011967A (ja) * | 1996-06-25 | 1998-01-16 | Samsung Electron Co Ltd | アレー回路制御用の内部電圧を用いた昇圧電源電圧発生装置 |
JP2001126477A (ja) * | 1999-10-27 | 2001-05-11 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2002270778A (ja) * | 2001-03-14 | 2002-09-20 | Toshiba Corp | 半導体集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JP2005050503A (ja) | 2005-02-24 |
KR100498505B1 (ko) | 2005-07-01 |
KR20050008365A (ko) | 2005-01-21 |
US7084675B2 (en) | 2006-08-01 |
DE102004035151A1 (de) | 2005-02-17 |
US20050013176A1 (en) | 2005-01-20 |
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