KR100497626B1 - 습식 공정으로 제작된 유기 반도체 소자 및 유기 전계발광소자 - Google Patents
습식 공정으로 제작된 유기 반도체 소자 및 유기 전계발광소자 Download PDFInfo
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- KR100497626B1 KR100497626B1 KR10-2003-0008854A KR20030008854A KR100497626B1 KR 100497626 B1 KR100497626 B1 KR 100497626B1 KR 20030008854 A KR20030008854 A KR 20030008854A KR 100497626 B1 KR100497626 B1 KR 100497626B1
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- Prior art keywords
- organic
- thin film
- organic semiconductor
- glycol
- alcohol
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 60
- 239000000243 solution Substances 0.000 claims abstract description 32
- 239000003960 organic solvent Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 27
- 239000007924 injection Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 230000005525 hole transport Effects 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 9
- 239000012044 organic layer Substances 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 94
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 32
- 150000002894 organic compounds Chemical class 0.000 claims description 30
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 claims description 26
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 15
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 claims description 13
- 239000011159 matrix material Substances 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 9
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 9
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 claims description 6
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 6
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 claims description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 claims description 6
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 6
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 claims description 6
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 claims description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 6
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 3
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 3
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 3
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 claims description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 3
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 claims description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940117389 dichlorobenzene Drugs 0.000 claims description 3
- KWKXNDCHNDYVRT-UHFFFAOYSA-N dodecylbenzene Chemical compound CCCCCCCCCCCCC1=CC=CC=C1 KWKXNDCHNDYVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 235000019441 ethanol Nutrition 0.000 claims description 3
- 229940051250 hexylene glycol Drugs 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 150000002596 lactones Chemical class 0.000 claims description 3
- 229920001515 polyalkylene glycol Polymers 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920001451 polypropylene glycol Polymers 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 229940116411 terpineol Drugs 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 3
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 8
- 239000010977 jade Substances 0.000 claims 2
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- 238000005401 electroluminescence Methods 0.000 abstract description 122
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- 238000001704 evaporation Methods 0.000 abstract 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 20
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 19
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 18
- 239000012046 mixed solvent Substances 0.000 description 16
- -1 poly (phenylvinylene) Polymers 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
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- 239000002356 single layer Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
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- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
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- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
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- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- UOCMXZLNHQBBOS-UHFFFAOYSA-N 2-(1,3-benzoxazol-2-yl)phenol zinc Chemical compound [Zn].Oc1ccccc1-c1nc2ccccc2o1.Oc1ccccc1-c1nc2ccccc2o1 UOCMXZLNHQBBOS-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
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- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
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- 238000005342 ion exchange Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 1
- VXNSQGRKHCZUSU-UHFFFAOYSA-N octylbenzene Chemical compound [CH2]CCCCCCCC1=CC=CC=C1 VXNSQGRKHCZUSU-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical class N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- SXXNJJQVBPWGTP-UHFFFAOYSA-K tris[(4-methylquinolin-8-yl)oxy]alumane Chemical compound [Al+3].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-] SXXNJJQVBPWGTP-UHFFFAOYSA-K 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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Abstract
Description
Claims (20)
- 휘발성이 상이한 2종 이상의 유기 용매들로 조성된 혼합 유기용매에, 상기 혼합 유기용매에 대한 용해도가 상이한 2종 이상의 유기 화합물을 용해시킨 복합 용액을 사용하여, 습식 성막 공정으로 형성시킨, 연속적인 무경계 다중층 적층 구조의 유기 반도체 박막; 및상기 유기 반도체 박막에 전압을 인가하기 위한 전극들을 포함하는 유기 반도체 소자.
- 제1항에 있어서, 상기 유기 반도체 박막은 양극으로부터 정공 주입층, 정공 수송층, 발광층, 전자 수송층 및 전자 주입층의 순서에 따라 2 이상의 유기층이 적층되어 있는 유기 발광 박막인 것인 유기 반도체 소자.
- 제1항에 있어서, 상기 유기 반도체 박막의 두께는 0.001 내지 1㎛인 것인 유기 반도체 소자.
- 제1항에 있어서, 상기 유기 반도체 박막은 유기 발광 박막이며, 상기 전극들은 패시브 매트릭스 또는 액티브 매트릭스 전극구조를 가지는 것인 유기 반도체 소자.
- 제1항에 있어서, 상기 유기 반도체 박막은 유기 발광 박막이며, 상기 유기 반도체 소자는 표시장치, 텔레비전, 디지털 카메라, 컴퓨터, 노트북 컴퓨터, 이동 컴퓨터, 녹화 매체를 구비한 휴대용 재생 장치, 스크린, 게시판, 광고판, 고글형 표시장치, 자동차 표시장치, 비디오 카메라, 프린터 표시장치, 원격 통신 장치, 전화기 표시장치 및 이동 전화로 이루어지는 군으로부터 선택된 장치에 사용되는 것인 유기 반도체 소자.
- 2종 이상의 유기 화합물의 농도가 그 적층 방향을 따라 소정의 그래디언트(gradient)를 가지도록 순차적으로 적층되어 형성된 유기 반도체 박막; 및상기 유기 반도체 박막에 전압을 인가하기 위한 전극들을 포함하는 유기 반도체 소자.
- 휘발성이 상이한 2종 이상의 유기 용매들로 조성된 혼합 유기용매에, 상기 혼합 유기 용매에 대한 용해도가 상이한 2종 이상의 유기 화합물을 용해시킨 복합 용액을 기판의 상부에 도포하는 과정; 및상기 도포된 복합용액으로부터 상기 혼합 유기 용매를 제거하여, 연속적인 무경계 다중층 적층 구조의 반도체 박막이 되도록, 상기 2종 이상의 유기 화합물을 순차적으로 석출시키는 과정을 포함하는 유기 반도체 소자의 제조 방법.
- 제7항에 있어서, 상기 유기 화합물은 정공 주입층, 정공 수송층, 발광층, 전자 수송층 및 전자 주입층을 형성하는 화합물로 이루어진 군으로부터 선택되는 2 이상의 유기 화합물이며, 상기 유기 반도체 소자는 유기 발광 소자인 것인 유기 반도체 소자의 제조방법.
- 제8항에 있어서, 상기 유기 화합물은 도판트 및/또는 바인더 수지를 더욱 포함하는 것인 유기 반도체 소자의 제조방법.
- 제7항에 있어서, 상기 복합 용액을 기판의 상부에 도포하는 과정은 인쇄 공정, 잉크제트 공정, 스핀-코팅 공정, 및 침적 공정으로 이루어진 군으로부터 선택되는 방법에 의하여 수행되는 것인 유기 반도체 소자의 제조 방법.
- 제7항에 있어서, 상기 유기 화합물을 석출시킨 후, 그 상부에 전극을 형성하는 공정과, 상기 전극 및 석출된 유기 화합물층을 불활성 가스 분위기에서 봉지하는 공정을 더욱 포함하는 유기 반도체 소자의 제조방법.
- 제7항에 있어서, 상기 유기용매는, 메틸 알콜, 에틸 알콜, n-프로필 알콜, 이소프로필 알콜, n-부틸 알콜, 섹-부틸 알콜, 터트-부틸 알콜, 디메틸포름아미드, 디메틸아세트아미드, 케톤, 아세톤, 디아세톤 알콜, 케토-알콜, 디옥산, 에테르, 폴리에틸렌 글리콜, 폴리프로필렌 글리콜, 폴리알킬렌 글리콜, 에틸렌글리콜, 프로필렌 글리콜, 부틸렌 글리콜, 트리에틸렌 글리콜, 헥실렌 글리콜, 디에틸렌 글리콜, 글리세롤, 에틸렌 글리콜 모노메틸 에테르, 디에틸렌 글리콜 메틸 에테르, 트리에틸렌 글리콜 모노메틸 에테르, 2-피롤리돈, 톨루엔, 크실렌, 클로로벤젠, 디클로로벤젠, 클로로포름, 디클로로메탄, 디클로로에탄, 감마부틸 락톤, 부틸 셀로졸브, 시클로헥산, NMP(N-메틸-2-피롤리돈), 시클로헥사논, THF(테트라히드로푸란), 사염화탄소, 테트라클로로에탄, 옥틸벤젠, 도데실벤젠, 퀴놀린, 트리클로로벤젠, 니트로벤즈알데하이드, 니트로벤젠, 2황화탄소, 2-헵타논, 벤젠, 테르피네올, 부틸카르비톨아세테이트 및 이온 교환수로 이루어진 군으로부터 선택되는 것인 유기 반도체 소자의 제조 방법.
- 제7항에 있어서, 상기 복합 용액에서 상기 유기 화합물의 농도는 약 0.005~10 wt%인 것인 유기 반도체 소자의 제조방법.
- 제7항에 있어서, 상기 복합 용액의 점도는 5000cp 이하 인 것인 유기 반도체 소자의 제조방법.
- 제7항에 있어서, 상기 유기 반도체 소자는 유기 발광 소자이며, 상기 유기 화합물을 순차적으로 석출시키는 과정은 적색, 녹색 및 청색 화소에 대하여 각각 별개로 수행되는 것인 유기 반도체 소자의 제조 방법.
- 휘발성이 상이한 2종 이상의 유기 용매들로 조성된 혼합 유기용매에, 상기 혼합 유기용매에 대한 용해도가 상이한 2종 이상의 유기 화합물을 용해시킨 유기 반도체 박막 형성용 복합 용액.
- 제16항에 있어서, 상기 유기용매는, 메틸 알콜, 에틸 알콜, n-프로필 알콜, 이소프로필 알콜, n-부틸 알콜, 섹-부틸 알콜, 터트-부틸 알콜, 디메틸포름아미드, 디메틸아세트아미드, 케톤, 아세톤, 디아세톤 알콜, 케토-알콜, 디옥산, 에테르, 폴리에틸렌 글리콜, 폴리프로필렌 글리콜, 폴리알킬렌 글리콜, 에틸렌글리콜, 프로필렌 글리콜, 부틸렌 글리콜, 트리에틸렌 글리콜, 헥실렌 글리콜, 디에틸렌 글리콜, 글리세롤, 에틸렌 글리콜 모노메틸 에테르, 디에틸렌 글리콜 메틸 에테르, 트리에틸렌 글리콜 모노메틸 에테르, 2-피롤리돈, 톨루엔, 크실렌, 클로로벤젠, 디클로로벤젠, 클로로포름, 디클로로메탄, 디클로로에탄, 감마부틸 락톤, 부틸 셀로졸브, 시클로헥산, NMP(N-메틸-2-피롤리돈), 시클로헥사논, THF(테트라히드로푸란), 사염화탄소, 테트라클로로에탄, 옥틸벤젠, 도데실벤젠, 퀴놀린, 트리클로로벤젠, 니트로벤즈알데하이드, 니트로벤젠, 2황화탄소, 2-헵타논, 벤젠, 테르피네올, 부틸카르비톨아세테이트 및 이온 교환수로 이루어진 군으로부터 선택되는 것인 유기 반도체 박막 형성용 복합 용액.
- 제16항에 있어서, 상기 복합 용액에서 상기 유기 화합물의 농도는 약 0.005~10 wt%인 것인 유기 반도체 박막 형성용 복합 용액.
- 제16항에 있어서, 상기 복합 용액의 점도는 5000cp 이하 인 것인 유기 반도체 박막 형성용 복합 용액.
- 제9항에 있어서, 상기 바인더 수지는 배열성이 없는 바인더 수지 및/또는 배열성이 있는 바인더 수지인 것인 유기 반도체 소자의 제조방법.
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JP (1) | JP4475957B2 (ko) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103006344A (zh) * | 2012-12-05 | 2013-04-03 | 山东大学 | 一种半导体制冷式冻伤模型仪 |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004204114A (ja) * | 2002-12-26 | 2004-07-22 | Dainippon Printing Co Ltd | インクジェット用インク組成物 |
KR20050001194A (ko) * | 2003-06-27 | 2005-01-06 | 삼성오엘이디 주식회사 | 유기 전계 발광 표시 장치 및 이의 제조 방법 |
TWI276030B (en) * | 2003-12-26 | 2007-03-11 | Pioneer Corp | Organic semiconductor light-emitting device |
JP4378186B2 (ja) | 2004-02-06 | 2009-12-02 | キヤノン株式会社 | 有機el素子アレイ |
JP4649676B2 (ja) * | 2004-07-07 | 2011-03-16 | 独立行政法人科学技術振興機構 | 有機エレクトロルミネッセンス素子 |
JP4616596B2 (ja) * | 2004-08-27 | 2011-01-19 | 株式会社 日立ディスプレイズ | 電子装置の製造方法 |
JP4168999B2 (ja) * | 2004-11-30 | 2008-10-22 | セイコーエプソン株式会社 | 発光材料及び有機el装置の製造方法 |
US20070278477A1 (en) * | 2004-12-21 | 2007-12-06 | Kenji Nakamura | Organic Semiconductor Light-Emitting Device |
KR101127572B1 (ko) | 2005-02-05 | 2012-03-26 | 삼성모바일디스플레이주식회사 | 유기전계발광소자 및 그 제조방법 |
WO2006087945A1 (ja) | 2005-02-15 | 2006-08-24 | Pioneer Corporation | 成膜用組成物及び有機電界発光素子 |
JP5023456B2 (ja) * | 2005-03-28 | 2012-09-12 | 大日本印刷株式会社 | 有機薄膜太陽電池素子 |
CN100349626C (zh) * | 2005-09-29 | 2007-11-21 | 暨南大学 | 取向聚合物/液晶复合膜血液相容性生物材料的制备方法 |
US7582508B2 (en) * | 2006-05-31 | 2009-09-01 | Byoung-Choo Park | Method for manufacturing an organic semiconductor device that utilizes ionic salt |
KR101384785B1 (ko) * | 2006-06-01 | 2014-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광소자, 발광장치 및 전자기기 |
KR101304697B1 (ko) * | 2006-06-07 | 2013-09-06 | 삼성전자주식회사 | 적층 유도 화합물을 사용한 유기 반도체 소재, 이를포함하는 조성물, 이를 이용한 유기 반도체 박막 및 유기전자 소자 |
US20080074034A1 (en) * | 2006-09-22 | 2008-03-27 | Jou Jwo-Huei | Organic Light Emitting Diode Device and Light Emitting Layer Manufacture Method Thereof |
US9397308B2 (en) * | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
DE102007024153A1 (de) | 2007-04-23 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Elektrisches organisches Bauelement und Verfahren zu seiner Herstellung |
JP4967864B2 (ja) * | 2007-07-06 | 2012-07-04 | 三菱化学株式会社 | 有機電界発光素子 |
JP5130001B2 (ja) * | 2007-07-27 | 2013-01-30 | 富士フイルム株式会社 | 有機電界発光素子 |
JP5255794B2 (ja) * | 2007-07-27 | 2013-08-07 | ユー・ディー・シー アイルランド リミテッド | 有機電界発光素子 |
JP2009037981A (ja) * | 2007-08-03 | 2009-02-19 | Idemitsu Kosan Co Ltd | 有機el素子および有機el素子の製造方法 |
JP5527933B2 (ja) * | 2007-11-30 | 2014-06-25 | 東京エレクトロン株式会社 | 成膜装置の制御方法、成膜方法、成膜装置、有機el電子デバイスおよびその制御プログラムを格納した記憶媒体 |
RU2472255C2 (ru) * | 2007-12-14 | 2013-01-10 | Конинклейке Филипс Электроникс Н.В. | Органическое светоизлучающее устройство с регулируемой инжекцией носителей заряда |
JPWO2009084413A1 (ja) * | 2007-12-28 | 2011-05-19 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子、及び有機エレクトロルミネッセンス素子の製造方法 |
JP5745278B2 (ja) | 2008-03-06 | 2015-07-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 有機半導体配合物 |
DE102008023035B4 (de) * | 2008-05-09 | 2016-01-07 | Novaled Ag | Lichtemittierendes organisches Bauelement und Verfahren zum Herstellen |
GB2466843A (en) * | 2009-01-12 | 2010-07-14 | Cambridge Display Tech Ltd | Interlayer formulation for flat films |
US8174000B2 (en) * | 2009-02-11 | 2012-05-08 | Universal Display Corporation | Liquid compositions for inkjet printing of organic layers or other uses |
KR101311943B1 (ko) * | 2009-12-08 | 2013-09-26 | 제일모직주식회사 | 유기 광전 소자의 제조방법 및 이로부터 제조된 유기 광전 소자 |
US9379323B2 (en) | 2010-04-12 | 2016-06-28 | Merck Patent Gmbh | Composition having improved performance |
JP6375600B2 (ja) * | 2013-09-03 | 2018-08-22 | セイコーエプソン株式会社 | 有機el素子の製造方法、有機el素子、有機el装置、電子機器 |
KR102145424B1 (ko) * | 2013-11-11 | 2020-08-18 | 엘지디스플레이 주식회사 | 표시장치 제조용 잉크 및 이를 이용한 표시장치의 제조방법 |
JP6786523B2 (ja) * | 2015-05-22 | 2020-11-18 | メルク パテント ゲーエムベーハー | 有機半導体と金属錯体を含む調合物 |
KR20170035228A (ko) | 2015-09-22 | 2017-03-30 | 한국생산기술연구원 | 알코올계 기능기를 구비하는 유기소자용 화합물 및 이를 포함하는 유기발광소자의 제조방법 |
US10686132B2 (en) | 2015-10-06 | 2020-06-16 | Merck Patent Gmbh | Formulations comprising organic at least two semiconducting compounds and at least two solvents |
WO2017110953A1 (ja) * | 2015-12-24 | 2017-06-29 | 株式会社Flosfia | 成膜方法 |
CN105428546A (zh) | 2016-01-20 | 2016-03-23 | 京东方科技集团股份有限公司 | 一种qled及其制备方法、显示装置及其制备方法 |
CN105826484B (zh) * | 2016-05-18 | 2019-03-08 | Tcl集团股份有限公司 | 一种oled及其制备方法 |
CN106297959A (zh) * | 2016-11-01 | 2017-01-04 | 京东方科技集团股份有限公司 | 导电粒子、各向异性导电膜层及其制备方法和显示装置 |
KR102612998B1 (ko) * | 2016-12-30 | 2023-12-11 | 엘지디스플레이 주식회사 | 표시 장치 및 이를 이용한 멀티 스크린 표시 장치 |
CN106981588A (zh) * | 2017-05-02 | 2017-07-25 | 深圳市华星光电技术有限公司 | 一种有机发光器件及其制造方法 |
DE102017122886A1 (de) * | 2017-10-02 | 2019-04-04 | Aixtron Se | Verfahren zur Herstellung einer leuchtenden Pixelanordnung |
WO2020136713A1 (ja) * | 2018-12-25 | 2020-07-02 | シャープ株式会社 | 発光デバイスの製造方法 |
CN109742257B (zh) * | 2019-01-04 | 2020-12-29 | 合肥京东方光电科技有限公司 | 电致发光器件、其制备方法及显示装置 |
CN112714967A (zh) * | 2019-08-27 | 2021-04-27 | 京东方科技集团股份有限公司 | 显示装置及制备方法、电子设备 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4692994A (en) * | 1986-04-29 | 1987-09-15 | Hitachi, Ltd. | Process for manufacturing semiconductor devices containing microbridges |
US5091004A (en) * | 1987-09-22 | 1992-02-25 | Dainippon Ink And Chemicals, Inc. | Ink composition |
JP3318384B2 (ja) * | 1993-02-05 | 2002-08-26 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及びその作製方法 |
US6683350B1 (en) * | 1993-02-05 | 2004-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Transistor and method for manufacturing the same |
US5895933A (en) * | 1993-06-25 | 1999-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for its preparation |
US5529937A (en) * | 1993-07-27 | 1996-06-25 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating thin film transistor |
JP2719559B2 (ja) * | 1993-10-07 | 1998-02-25 | セイコープレシジョン株式会社 | El素子 |
TW272319B (ko) * | 1993-12-20 | 1996-03-11 | Sharp Kk | |
US6162667A (en) * | 1994-03-28 | 2000-12-19 | Sharp Kabushiki Kaisha | Method for fabricating thin film transistors |
AU3487197A (en) * | 1996-06-12 | 1998-01-07 | Trustees Of Princeton University, The | Patterning of thin films for the fabrication of organic multi-color displays |
US6013982A (en) | 1996-12-23 | 2000-01-11 | The Trustees Of Princeton University | Multicolor display devices |
JP3861400B2 (ja) * | 1997-09-01 | 2006-12-20 | セイコーエプソン株式会社 | 電界発光素子およびその製造方法 |
US5936259A (en) * | 1997-10-16 | 1999-08-10 | Lucent Technologies Inc. | Thin film transistor and organic semiconductor material thereof |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
JP2000174282A (ja) * | 1998-12-03 | 2000-06-23 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
EP1083775B1 (en) * | 1999-03-29 | 2010-10-13 | Seiko Epson Corporation | Composition comprising an organic electroluminescent material |
TW515109B (en) * | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
JP4226159B2 (ja) * | 1999-08-06 | 2009-02-18 | シャープ株式会社 | 有機ledディスプレイの製造方法 |
EP1129484A1 (en) * | 1999-08-24 | 2001-09-05 | Koninklijke Philips Electronics N.V. | Display device |
EP1143773A4 (en) * | 1999-10-05 | 2007-02-21 | Matsushita Electric Ind Co Ltd | ELECTROLUMINESCENT DEVICE AND CORRESPONDING MANUFACTURING METHOD, AND DISPLAY AND LIGHTING DEVICE COMPRISING SAID DEVICE |
US6582504B1 (en) * | 1999-11-24 | 2003-06-24 | Sharp Kabushiki Kaisha | Coating liquid for forming organic EL element |
US20020001026A1 (en) * | 2000-02-01 | 2002-01-03 | Nobuyuki Ishikawa | Production of organic luminescence device |
JP3854782B2 (ja) * | 2000-06-02 | 2006-12-06 | キヤノン株式会社 | 光学素子とその製造方法 |
ATE324603T1 (de) * | 2000-06-02 | 2006-05-15 | Canon Kk | Herstellungsverfahren für ein optisches element |
JP2002083691A (ja) * | 2000-09-06 | 2002-03-22 | Sharp Corp | アクティブマトリックス駆動型有機led表示装置及びその製造方法 |
TW545080B (en) * | 2000-12-28 | 2003-08-01 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
TW518909B (en) * | 2001-01-17 | 2003-01-21 | Semiconductor Energy Lab | Luminescent device and method of manufacturing same |
TWI225312B (en) * | 2001-02-08 | 2004-12-11 | Semiconductor Energy Lab | Light emitting device |
CN100377380C (zh) * | 2001-02-28 | 2008-03-26 | 剑桥显示技术有限公司 | 供沉积在基材上的材料配方和方法 |
JP2002289355A (ja) * | 2001-03-26 | 2002-10-04 | Pioneer Electronic Corp | 有機半導体ダイオード及び有機エレクトロルミネセンス素子表示装置 |
EP1285957A3 (en) * | 2001-08-20 | 2005-12-21 | TDK Corporation | Organic electroluminescent device and method of its preparation |
EP1291932A3 (en) * | 2001-09-05 | 2006-10-18 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
JP4288895B2 (ja) * | 2002-06-04 | 2009-07-01 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンスの製造方法 |
WO2004070787A2 (en) * | 2003-02-03 | 2004-08-19 | The Regents Of The University Of California | Method for making multifunctional organic thin films |
KR20070081623A (ko) * | 2006-02-13 | 2007-08-17 | 삼성에스디아이 주식회사 | 유기 발광 소자 |
-
2002
- 2002-02-15 KR KR1020020008269A patent/KR20020025918A/ko active Search and Examination
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2003
- 2003-02-12 KR KR10-2003-0008854A patent/KR100497626B1/ko active IP Right Grant
- 2003-02-13 WO PCT/KR2003/000305 patent/WO2003069959A1/en active Application Filing
- 2003-02-13 EP EP03705456A patent/EP1474955A1/en not_active Withdrawn
- 2003-02-13 JP JP2003568938A patent/JP4475957B2/ja not_active Expired - Fee Related
- 2003-02-13 AU AU2003207386A patent/AU2003207386A1/en not_active Abandoned
- 2003-02-13 CN CN038033623A patent/CN1628493B/zh not_active Expired - Fee Related
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- 2006-03-08 US US11/370,462 patent/US7666691B2/en not_active Expired - Lifetime
- 2006-03-08 US US11/370,461 patent/US20060177696A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103006344A (zh) * | 2012-12-05 | 2013-04-03 | 山东大学 | 一种半导体制冷式冻伤模型仪 |
CN103006344B (zh) * | 2012-12-05 | 2014-12-03 | 山东大学 | 一种半导体制冷式冻伤模型仪 |
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WO2003069959A1 (en) | 2003-08-21 |
AU2003207386A1 (en) | 2003-09-04 |
CN1628493A (zh) | 2005-06-15 |
US7666691B2 (en) | 2010-02-23 |
US20060147615A1 (en) | 2006-07-06 |
JP2005518079A (ja) | 2005-06-16 |
EP1474955A1 (en) | 2004-11-10 |
CN1628493B (zh) | 2010-12-08 |
JP4475957B2 (ja) | 2010-06-09 |
KR20020025918A (ko) | 2002-04-04 |
US20050014026A1 (en) | 2005-01-20 |
KR20030069061A (ko) | 2003-08-25 |
US20060177696A1 (en) | 2006-08-10 |
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