KR100495751B1 - 진공 상태에서의 기판 도포 방법 및 그 장치 - Google Patents

진공 상태에서의 기판 도포 방법 및 그 장치 Download PDF

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Publication number
KR100495751B1
KR100495751B1 KR10-2002-7005091A KR20027005091A KR100495751B1 KR 100495751 B1 KR100495751 B1 KR 100495751B1 KR 20027005091 A KR20027005091 A KR 20027005091A KR 100495751 B1 KR100495751 B1 KR 100495751B1
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KR
South Korea
Prior art keywords
outlet
deposition material
substrate
source
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2002-7005091A
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English (en)
Korean (ko)
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KR20020068039A (ko
Inventor
게리엘.스미스
Original Assignee
커트 제이. 레스커 컴파니
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Publication of KR20020068039A publication Critical patent/KR20020068039A/ko
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Anticipated expiration legal-status Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR10-2002-7005091A 1999-10-22 2000-10-20 진공 상태에서의 기판 도포 방법 및 그 장치 Expired - Fee Related KR100495751B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16109499P 1999-10-22 1999-10-22
US60/161,094 1999-10-22

Publications (2)

Publication Number Publication Date
KR20020068039A KR20020068039A (ko) 2002-08-24
KR100495751B1 true KR100495751B1 (ko) 2005-06-17

Family

ID=22579796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-7005091A Expired - Fee Related KR100495751B1 (ko) 1999-10-22 2000-10-20 진공 상태에서의 기판 도포 방법 및 그 장치

Country Status (9)

Country Link
EP (1) EP1246951A4 (enExample)
JP (1) JP2003513169A (enExample)
KR (1) KR100495751B1 (enExample)
CN (1) CN1175126C (enExample)
AU (1) AU1339401A (enExample)
CA (1) CA2388178A1 (enExample)
DE (1) DE10085115T1 (enExample)
TW (1) TW574396B (enExample)
WO (1) WO2001031081A1 (enExample)

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TW490714B (en) 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US7517551B2 (en) 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
JP4704605B2 (ja) 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
SG113448A1 (en) 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원
EP1369499A3 (en) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US6749906B2 (en) 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
US20040123804A1 (en) 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US8123862B2 (en) 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
JP4551996B2 (ja) * 2003-10-09 2010-09-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 蒸発装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
ITMI20042279A1 (it) 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US7433141B2 (en) 2005-03-09 2008-10-07 Tandberg Data Corporation Data randomization for rewriting in recording/reproduction apparatus
JP4696710B2 (ja) * 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100745619B1 (ko) * 2006-04-11 2007-08-02 한국전기연구원 플룸 형상 제어 레이저 증착 시스템
KR101108152B1 (ko) * 2009-04-30 2012-01-31 삼성모바일디스플레이주식회사 증착 소스
KR101094299B1 (ko) 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR102077803B1 (ko) * 2013-05-21 2020-02-17 삼성디스플레이 주식회사 증착원 및 유기층 증착 장치
CN104178734B (zh) * 2014-07-21 2016-06-15 京东方科技集团股份有限公司 蒸发镀膜装置
KR102319998B1 (ko) * 2015-01-22 2021-11-01 삼성디스플레이 주식회사 볼륨 가변형 도가니를 구비한 증착원
KR102488260B1 (ko) * 2016-03-07 2023-01-13 삼성디스플레이 주식회사 증착 장치 및 표시 장치의 제조 방법
CN106148878B (zh) * 2016-06-24 2018-06-08 中南大学 一种模拟高温喷镀过程的装置及其使用方法

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Also Published As

Publication number Publication date
KR20020068039A (ko) 2002-08-24
CN1175126C (zh) 2004-11-10
EP1246951A4 (en) 2004-10-13
EP1246951A1 (en) 2002-10-09
JP2003513169A (ja) 2003-04-08
DE10085115T1 (de) 2002-11-07
AU1339401A (en) 2001-05-08
TW574396B (en) 2004-02-01
CN1402800A (zh) 2003-03-12
CA2388178A1 (en) 2001-05-03
WO2001031081A1 (en) 2001-05-03

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