KR100414239B1 - 퓨즈및안티-퓨즈와퓨즈및안티-퓨즈를제조및활성화하기위한방법 - Google Patents

퓨즈및안티-퓨즈와퓨즈및안티-퓨즈를제조및활성화하기위한방법 Download PDF

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Publication number
KR100414239B1
KR100414239B1 KR10-1998-0706091A KR19980706091A KR100414239B1 KR 100414239 B1 KR100414239 B1 KR 100414239B1 KR 19980706091 A KR19980706091 A KR 19980706091A KR 100414239 B1 KR100414239 B1 KR 100414239B1
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KR
South Korea
Prior art keywords
fuse
track
conductive
conduction
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0706091A
Other languages
English (en)
Korean (ko)
Other versions
KR19990082361A (ko
Inventor
토마스 쳇틀러
요제프 비너를
게오르크 게오르가코스
볼프강 포크란트
Original Assignee
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지멘스 악티엔게젤샤프트 filed Critical 지멘스 악티엔게젤샤프트
Publication of KR19990082361A publication Critical patent/KR19990082361A/ko
Application granted granted Critical
Publication of KR100414239B1 publication Critical patent/KR100414239B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fuses (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
KR10-1998-0706091A 1996-02-09 1997-02-06 퓨즈및안티-퓨즈와퓨즈및안티-퓨즈를제조및활성화하기위한방법 Expired - Fee Related KR100414239B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19604776A DE19604776A1 (de) 1996-02-09 1996-02-09 Auftrennbare Verbindungsbrücke (Fuse) und verbindbare Leitungsunterbrechung (Anti-Fuse), sowie Verfahren zur Herstellung und Aktivierung einer Fuse und einer Anti-Fuse
DE19604776.5 1996-02-09

Publications (2)

Publication Number Publication Date
KR19990082361A KR19990082361A (ko) 1999-11-25
KR100414239B1 true KR100414239B1 (ko) 2004-02-18

Family

ID=7784979

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0706091A Expired - Fee Related KR100414239B1 (ko) 1996-02-09 1997-02-06 퓨즈및안티-퓨즈와퓨즈및안티-퓨즈를제조및활성화하기위한방법

Country Status (10)

Country Link
EP (1) EP0879479B1 (enExample)
JP (1) JP3288385B2 (enExample)
KR (1) KR100414239B1 (enExample)
CN (1) CN1211856C (enExample)
AT (1) ATE239302T1 (enExample)
DE (2) DE19604776A1 (enExample)
ES (2) ES2158310T3 (enExample)
IN (1) IN191121B (enExample)
UA (1) UA50755C2 (enExample)
WO (1) WO1997029515A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7576407B2 (en) 2006-04-26 2009-08-18 Samsung Electronics Co., Ltd. Devices and methods for constructing electrically programmable integrated fuses for low power applications

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0992809A1 (de) 1998-09-28 2000-04-12 Siemens Aktiengesellschaft Schaltungsanordnung mit deaktivierbarem Scanpfad
DE10346460A1 (de) * 2003-10-02 2005-05-19 Infineon Technologies Ag Anordnung und Verfahren zum Schutz von Fuses/Anti-Fuses
DE10349749B3 (de) * 2003-10-23 2005-05-25 Infineon Technologies Ag Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen
JP4701034B2 (ja) * 2005-08-02 2011-06-15 パナソニック株式会社 半導体装置
US8542517B2 (en) 2011-06-13 2013-09-24 International Business Machines Corporation Low voltage programmable mosfet antifuse with body contact for diffusion heating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1131790B (it) * 1979-08-20 1986-06-25 Rca Corp Complesso universale di collegamento interno per circuiti integrati cmos/sos ad alta densita'
EP0054102A3 (en) * 1980-12-11 1983-07-27 Rockwell International Corporation Very high density cells comprising a rom and method of manufacturing same
GB2100057A (en) * 1981-05-27 1982-12-15 Post Office Method of forming conductive tracks in a semi-conductor body by annealing
EP0094073B1 (en) * 1982-05-12 1988-07-27 Kabushiki Kaisha Toshiba Semiconductor device capable of structural selection
GB2215128B (en) * 1988-02-23 1991-10-16 Stc Plc Improvements in integrated circuits
JPH0320063A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 電気ヒューズ
FR2713398B1 (fr) * 1993-11-30 1996-01-19 Sgs Thomson Microelectronics Fusible pour circuit intégré.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7576407B2 (en) 2006-04-26 2009-08-18 Samsung Electronics Co., Ltd. Devices and methods for constructing electrically programmable integrated fuses for low power applications

Also Published As

Publication number Publication date
IN191121B (enExample) 2003-09-27
ATE239302T1 (de) 2003-05-15
EP0879479B1 (de) 2003-05-02
EP0879479A2 (de) 1998-11-25
WO1997029515A2 (de) 1997-08-14
WO1997029515A3 (de) 1997-09-18
CN1211856C (zh) 2005-07-20
ES2158310T3 (es) 2001-09-01
UA50755C2 (uk) 2002-11-15
ES2198559T3 (es) 2004-02-01
JP3288385B2 (ja) 2002-06-04
CN1210623A (zh) 1999-03-10
DE59709973D1 (de) 2003-06-05
DE19604776A1 (de) 1997-08-14
JPH11506874A (ja) 1999-06-15
KR19990082361A (ko) 1999-11-25

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