KR100400032B1 - 와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 - Google Patents
와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 Download PDFInfo
- Publication number
- KR100400032B1 KR100400032B1 KR10-2001-0005945A KR20010005945A KR100400032B1 KR 100400032 B1 KR100400032 B1 KR 100400032B1 KR 20010005945 A KR20010005945 A KR 20010005945A KR 100400032 B1 KR100400032 B1 KR 100400032B1
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- wire bonding
- solder ball
- bond
- semiconductor chip
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 title claims description 122
- 238000013461 design Methods 0.000 title abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 28
- 229910000679 solder Inorganic materials 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- 239000008393 encapsulating agent Substances 0.000 claims description 7
- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6611—Wire connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/4917—Crossed wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims (22)
- 통상적으로 사용되는 본드 핑거 및 솔더볼 패드 외에 사용되지 않는 본드 핑거 및 솔더볼 패드를 포함하는 기판;상기 기판 위에 탑재되고 상면에 다수개의 본드 패드가 형성된 반도체 칩;상기 반도체 칩의 본드 패드와 상기 통상적으로 사용되는 본드 핑거를 연결하는 정상적인 와이어 본딩부;상기 사용되지 않은 솔더볼 패드와 연결된 제1 본드 핑거와, 상기 사용되지 않는 제2 본드 핑거를 연결하는 추가된 와이어 본딩부;상기 반도체 칩, 상기 정상적인 와이어 본딩부 및 상기 추가된 와이어 본딩부를 봉합하는 봉합제(Encapsulant); 및상기 기판 아래에서 상기 솔더볼 패드와 연결된 솔더볼을 구비하는 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 기판은 상부에 인쇄회로 패턴이 있는 단층 기판인 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 기판은 이중층(double layer) 기판 및 다중기판(multi layer) 기판 중에서 선택된 하나인 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 기판은 상기 정상적인 와이어 본딩 및 추가된 와이어 본딩이 수행되는 본드 핑거 및 솔더볼 패드 영역에 솔더 마스크가 형성되지 않는 기판인 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 추가된 와이어 본딩부는 기판의 상부에 형성되는 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 추가된 와이어 본딩부는 기판의 상부에서 반도체 칩이 탑재된 바깥영역에 형성되는 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 추가된 와이어 본딩부는 하나 또는 다수개인 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 반도체 칩은 상기 기판에 접착제(adhesive)를 이용하여 부착된 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 추가된 와이어 본딩부의 제1 본드 핑거는, 상기 기판에서 인쇄회로 패턴을 추가로 연장하여 만들어진 것을 특징으로 하는 반도체 패키지.
- 제1항에 있어서,상기 제1 본드 핑거는 다른 본드 핑거와 같은 패드 형태인 것을 특징으로 하는 반도체 패키지.
- 통상적으로 사용되는 본드 핑거 및 솔더볼 패드 외에 사용되지 않는 본드 핑거 및 솔더볼 패드를 포함하는 기판;상기 기판 위에 탑재되고 상면에 다수개의 본드 패드가 형성된 반도체 칩;상기 반도체 칩의 본드 패드와 상기 통상적으로 사용되는 본드 핑거를 연결하는 정상적인 와이어 본딩부;상기 사용되지 않은 솔더볼 패드와 연결된 인쇄회로 패턴과, 상기 사용되지 않은 본드 핑거와 연결된 인쇄회로 패턴끼리를 서로 연결하는 추가된 와이어 본딩부;상기 반도체 칩, 상기 정상적인 와이어 본딩부 및 추가된 와이어 본딩부를 봉합하는 봉합제; 및상기 기판 아래에서 상기 솔더볼 패드와 연결된 솔더볼을 구비하는 것을 특징으로 하는 반도체 패키지.
- 제11항에 있어서,상기 추가된 와이어 본딩부의 인쇄회로 패턴은 와이어 본딩이 가능한 폭을 갖는 것을 특징으로 하는 반도체 패키지.
- 통상적으로사용되는 본드 핑거 및 솔더볼 패드 외에 사용되지 않는 본드 핑거와 솔더볼 패드를 포함하는 기판에 추가된 와이어 본딩부를 형성하기 위한 제1 본드 핑거를 만드는 단계;상기 기판 위에 상면에 다수개의 본드 패드가 형성된 반도체 칩을 접착제를 사용하여 부착하는 단계;상기 반도체 칩이 부착된 기판에 반도체 칩의 본드패드와 기판에서 통상적으로 사용하는 본드핑거를 연결하는 정상적인 와이어 본딩과, 상기 새로 만든 제1 본드 핑거와 사용되지 않는 본드 핑거를 연결하는 추가된 와이어 본딩을 수행하는 단계;상기 반도체 칩과, 상기 와이어를 덮는 봉합(Encapsulation) 공정을 수행하는 단계; 및상기 기판 상부의 솔더볼 패드와 연결된 기판 하부의 솔더볼 패드에 솔더볼을 부착하는 단계를 구비하는 것을 특징으로 하는 반도체 패키지 제조방법.
- 제13항에 있어서,상기 제1 본드 핑거는 사용되지 않는 솔더볼 패드와 새로운 인쇄회로 패턴으로 연결된 본드 핑거인 것을 특징으로 하는 반도체 패키지 제조방법.
- 제13항에 있어서,상기 기판은 단층, 이중층 및 다층 기판 중에서 선택된 어느 하나인 것을 특징으로 하는 반도체 패키지 제조방법.
- 제13항에 있어서,상기 추가된 와이어 본딩은 기판의 상부에서 반도체 칩이 부착된 바깥 영역에서 수행하는 것을 특징으로 하는 반도체 패키지 제조방법.
- 제13항에 있어서,상기 추가된 와이어 본딩은 하나 혹은 다수인 것을 특징으로 하는 반도체 패키지 제조방법.
- 통상적으로 사용되는 본드 핑거 및 솔더볼 패드 외에 사용되지 않고 인쇄회로 패턴이 연결된 상태의 본드 핑거와 솔더볼 패드를 포함하는 기판을 준비하는 단계;상기 기판 위에 상면에 다수개의 본드 패드가 형성된 반도체 칩을 접착제를 사용하여 부착하는 단계;상기 반도체 칩이 부착된 기판에 반도체 칩의 본드패드와 기판에서 통상적으로 사용하는 본드핑거를 연결하는 정상적인 와이어 본딩과, 상기 사용되지 않는 본드 핑거와 솔더볼 패드를 연결하기 위한 추가된 와이어 본딩을 수행하는 단계;상기 반도체 칩과, 상기 와이어를 덮는 봉합(Encapsulation) 공정을 수행하는 단계; 및상기 기판 상부의 솔더볼 패드와 연결된 기판 하부의 솔더볼 패드에 솔더볼을 부착하는 단계를 구비하는 것을 특징으로 하는 반도체 패키지 제조방법.
- 제18항에 있어서,상기 추가된 와이어 본딩은 기판 상부에서 상기 반도체 칩이 부착된 바깥영역에서 수행되는 것을 특징으로 하는 반도체 패키지 제조방법.
- 제18항에 있어서,상기 추가된 와이어 본딩은 상기 사용되지 않은 본드 핑거와 연결된 인쇄회로 패턴과, 상기 사용되지 않는 솔더볼 패드와 연결된 인쇄회로 패턴을 서로 연결하는 것을 특징으로 하는 반도체 패키지 제조방법.
- 제18항에 있어서,상기 기판은 단층, 이중층 및 다층 기판 중에서 선택된 어느 하나인 것을 특징으로 하는 반도체 패키지 제조방법.
- 제18항에 있어서,상기 추가된 와이어 본딩은 하나 혹은 다수인 것을 특징으로 하는 반도체 패키지 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0005945A KR100400032B1 (ko) | 2001-02-07 | 2001-02-07 | 와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 |
US10/055,266 US7307352B2 (en) | 2001-02-07 | 2002-01-22 | Semiconductor package having changed substrate design using special wire bonding |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0005945A KR100400032B1 (ko) | 2001-02-07 | 2001-02-07 | 와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020065765A KR20020065765A (ko) | 2002-08-14 |
KR100400032B1 true KR100400032B1 (ko) | 2003-09-29 |
Family
ID=19705451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0005945A KR100400032B1 (ko) | 2001-02-07 | 2001-02-07 | 와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7307352B2 (ko) |
KR (1) | KR100400032B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101089647B1 (ko) * | 2009-10-26 | 2011-12-06 | 삼성전기주식회사 | 단층 패키지 기판 및 그 제조방법 |
US11658131B2 (en) | 2020-06-08 | 2023-05-23 | Samsung Electronics Co., Ltd. | Semiconductor package with dummy pattern not electrically connected to circuit pattern |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050194665A1 (en) * | 2003-01-21 | 2005-09-08 | Huang Chien P. | Semiconductor package free of substrate and fabrication method thereof |
JP3986989B2 (ja) * | 2003-03-27 | 2007-10-03 | 松下電器産業株式会社 | 半導体装置 |
JP2007521656A (ja) * | 2003-06-25 | 2007-08-02 | アドバンスド インターコネクト テクノロジーズ リミテッド | 半導体パッケージのためのリード・フレーム・ルーティングされたチップ・パッド |
US7589407B2 (en) * | 2005-04-11 | 2009-09-15 | Stats Chippac Ltd. | Semiconductor multipackage module including tape substrate land grid array package stacked over ball grid array package |
KR100969695B1 (ko) | 2008-03-31 | 2010-07-14 | 르네사스 일렉트로닉스 가부시키가이샤 | 동작모드를 스위칭할 수 있는 반도체장치 |
JP5103245B2 (ja) * | 2008-03-31 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20100052122A1 (en) * | 2008-08-27 | 2010-03-04 | Advanced Semiconductor Engineering, Inc. | Wire bodning package structure |
US8304921B2 (en) * | 2009-11-13 | 2012-11-06 | Stats Chippac Ltd. | Integrated circuit packaging system with interconnect and method of manufacture thereof |
TWI566356B (zh) * | 2015-10-15 | 2017-01-11 | 力成科技股份有限公司 | 封裝結構及其製造方法 |
CN108960006B (zh) * | 2017-05-19 | 2021-11-30 | 致伸科技股份有限公司 | 指纹识别模块及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362368A (ja) * | 1986-09-03 | 1988-03-18 | Nec Corp | 集積回路装置 |
JPH02125630A (ja) * | 1988-11-04 | 1990-05-14 | Nec Corp | 半導体装置 |
KR930011189A (ko) * | 1991-11-13 | 1993-06-23 | 김광호 | 반도체 장치의 리이드 프레임 구조 및 와이어 본딩 방법 |
JP2000138251A (ja) * | 1998-11-04 | 2000-05-16 | Toshiba Corp | 半導体装置及び配線基板 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62136098A (ja) | 1985-12-09 | 1987-06-19 | 富士通株式会社 | 高密度配線基板 |
US5148265A (en) * | 1990-09-24 | 1992-09-15 | Ist Associates, Inc. | Semiconductor chip assemblies with fan-in leads |
US5468994A (en) * | 1992-12-10 | 1995-11-21 | Hewlett-Packard Company | High pin count package for semiconductor device |
US5633785A (en) * | 1994-12-30 | 1997-05-27 | University Of Southern California | Integrated circuit component package with integral passive component |
TW345710B (en) * | 1996-07-31 | 1998-11-21 | Hitachi Chemical Co Ltd | Chip supporting substrate for semiconductor package, semiconductor package and process for manufacturing semiconductor package |
DE19703639A1 (de) * | 1997-01-31 | 1998-08-06 | Bosch Gmbh Robert | Verfahren zur Herstellung von Bonddrahtverbindungen |
US6323065B1 (en) * | 1997-05-07 | 2001-11-27 | Signetics | Methods for manufacturing ball grid array assembly semiconductor packages |
US6160705A (en) * | 1997-05-09 | 2000-12-12 | Texas Instruments Incorporated | Ball grid array package and method using enhanced power and ground distribution circuitry |
US6118177A (en) * | 1998-11-17 | 2000-09-12 | Lucent Technologies, Inc. | Heatspreader for a flip chip device, and method for connecting the heatspreader |
JP2001223324A (ja) * | 2000-02-10 | 2001-08-17 | Mitsubishi Electric Corp | 半導体装置 |
US6522018B1 (en) * | 2000-05-16 | 2003-02-18 | Micron Technology, Inc. | Ball grid array chip packages having improved testing and stacking characteristics |
KR100608608B1 (ko) * | 2000-06-23 | 2006-08-09 | 삼성전자주식회사 | 혼합형 본딩패드 구조를 갖는 반도체 칩 패키지 및 그제조방법 |
US6707149B2 (en) * | 2000-09-29 | 2004-03-16 | Tessera, Inc. | Low cost and compliant microelectronic packages for high i/o and fine pitch |
-
2001
- 2001-02-07 KR KR10-2001-0005945A patent/KR100400032B1/ko active IP Right Grant
-
2002
- 2002-01-22 US US10/055,266 patent/US7307352B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6362368A (ja) * | 1986-09-03 | 1988-03-18 | Nec Corp | 集積回路装置 |
JPH02125630A (ja) * | 1988-11-04 | 1990-05-14 | Nec Corp | 半導体装置 |
KR930011189A (ko) * | 1991-11-13 | 1993-06-23 | 김광호 | 반도체 장치의 리이드 프레임 구조 및 와이어 본딩 방법 |
JP2000138251A (ja) * | 1998-11-04 | 2000-05-16 | Toshiba Corp | 半導体装置及び配線基板 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101089647B1 (ko) * | 2009-10-26 | 2011-12-06 | 삼성전기주식회사 | 단층 패키지 기판 및 그 제조방법 |
US11658131B2 (en) | 2020-06-08 | 2023-05-23 | Samsung Electronics Co., Ltd. | Semiconductor package with dummy pattern not electrically connected to circuit pattern |
Also Published As
Publication number | Publication date |
---|---|
US7307352B2 (en) | 2007-12-11 |
US20020105077A1 (en) | 2002-08-08 |
KR20020065765A (ko) | 2002-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5854512A (en) | High density leaded ball-grid array package | |
JP5346578B2 (ja) | 半導体アセンブリおよびその作製方法 | |
US7405145B2 (en) | Ball grid array package substrates with a modified central opening and method for making the same | |
US20040262734A1 (en) | Stack type ball grid array package and method for manufacturing the same | |
US8481371B2 (en) | Thin package system with external terminals and method of manufacture thereof | |
US20070170570A1 (en) | Integrated circuit package system including wide flange leadframe | |
KR100400032B1 (ko) | 와이어 본딩을 통해 기판 디자인을 변경하는 반도체 패키지 | |
US20040188818A1 (en) | Multi-chips module package | |
KR100292033B1 (ko) | 반도체칩패키지및그제조방법 | |
JPH11297917A (ja) | 半導体装置及びその製造方法 | |
US20080088005A1 (en) | SIP package with small dimension | |
KR20020095753A (ko) | 반도체 패키지 및 그 제조 방법 | |
KR20000040586A (ko) | 회로배선이 형성된 기판을 갖는 멀티 칩 패키지 | |
KR200169583Y1 (ko) | 볼 그리드 어레이 패키지 | |
KR100390453B1 (ko) | 반도체 패키지 및 그 제조방법 | |
KR100247641B1 (ko) | 적층형 볼 그리드 어레이 패키지 및 그의 제조방법 | |
KR100349561B1 (ko) | Lsi 패키지 및 그 인너리드 배선방법 | |
KR20070019359A (ko) | 밀봉 수지 주입용 개구부를 구비하는 양면 실장형 기판 및그를 이용하는 멀티 칩 패키지의 제조방법 | |
KR20020028473A (ko) | 적층 패키지 | |
KR20040013736A (ko) | 반도체 패키지 제조방법 | |
KR20050053246A (ko) | 멀티 칩 패키지 | |
KR100631944B1 (ko) | Fbga 패키지 | |
JP3703662B2 (ja) | 半導体装置 | |
KR20040045696A (ko) | 반도체 패키지 제조 방법 | |
KR20030056400A (ko) | 칩크기 패키지 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120831 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20130902 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20150831 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20180831 Year of fee payment: 16 |
|
FPAY | Annual fee payment |
Payment date: 20190830 Year of fee payment: 17 |