KR100397096B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100397096B1
KR100397096B1 KR10-2000-0058446A KR20000058446A KR100397096B1 KR 100397096 B1 KR100397096 B1 KR 100397096B1 KR 20000058446 A KR20000058446 A KR 20000058446A KR 100397096 B1 KR100397096 B1 KR 100397096B1
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KR
South Korea
Prior art keywords
region
impurity
oxide film
layer
semiconductor device
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Expired - Fee Related
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KR10-2000-0058446A
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English (en)
Korean (ko)
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KR20010050860A (ko
Inventor
구니끼요다쯔야
Original Assignee
미쓰비시덴키 가부시키가이샤
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR10-2000-0058446A 1999-10-06 2000-10-05 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100397096B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-285269 1999-10-06
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20010050860A KR20010050860A (ko) 2001-06-25
KR100397096B1 true KR100397096B1 (ko) 2003-09-06

Family

ID=17689325

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0058446A Expired - Fee Related KR100397096B1 (ko) 1999-10-06 2000-10-05 반도체 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US6545318B1 (enExample)
JP (1) JP2001111056A (enExample)
KR (1) KR100397096B1 (enExample)
CN (1) CN1157794C (enExample)
TW (1) TW468279B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487045B1 (ko) * 2001-12-20 2005-05-03 미쓰비시덴키 가부시키가이샤 반도체장치의 제조방법

Families Citing this family (21)

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US6787422B2 (en) * 2001-01-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Method of body contact for SOI mosfet
JP2002246600A (ja) 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4322453B2 (ja) * 2001-09-27 2009-09-02 株式会社東芝 半導体装置およびその製造方法
JP2004072063A (ja) * 2002-06-10 2004-03-04 Nec Electronics Corp 半導体装置及びその製造方法
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
JP2004221301A (ja) * 2003-01-15 2004-08-05 Seiko Instruments Inc 半導体装置とその製造方法
EP1636851A1 (en) * 2003-06-11 2006-03-22 Koninklijke Philips Electronics N.V. Prevention of a parasitic channel in an integrated soi process
US20050072975A1 (en) * 2003-10-02 2005-04-07 Shiao-Shien Chen Partially depleted soi mosfet device
KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
US6998684B2 (en) * 2004-03-31 2006-02-14 International Business Machines Corporation High mobility plane CMOS SOI
WO2005106961A1 (en) * 2004-04-28 2005-11-10 Semiconductor Energy Laboratory Co., Ltd. Mos capacitor and semiconductor device
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7566630B2 (en) * 2006-01-18 2009-07-28 Intel Corporation Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
EP1863090A1 (en) * 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20080217727A1 (en) * 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
JP5658916B2 (ja) * 2009-06-26 2015-01-28 株式会社半導体エネルギー研究所 半導体装置
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
CN101872737A (zh) * 2010-01-28 2010-10-27 中国科学院上海微系统与信息技术研究所 一种抑制soi浮体效应的mos结构及其制作方法
US8461005B2 (en) * 2010-03-03 2013-06-11 United Microelectronics Corp. Method of manufacturing doping patterns
KR101870809B1 (ko) * 2016-06-21 2018-08-02 현대오트론 주식회사 전력 반도체 소자

Citations (1)

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Publication number Priority date Publication date Assignee Title
JPH09223802A (ja) * 1996-02-15 1997-08-26 Toshiba Corp 半導体装置及びその製造方法

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JPS58124243A (ja) 1982-01-21 1983-07-23 Toshiba Corp 半導体装置の製造方法
US5145802A (en) * 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5359219A (en) * 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
JPH08181316A (ja) * 1994-12-22 1996-07-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3462301B2 (ja) 1995-06-16 2003-11-05 三菱電機株式会社 半導体装置及びその製造方法
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5770875A (en) 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6133608A (en) * 1997-04-23 2000-10-17 International Business Machines Corporation SOI-body selective link method and apparatus
JPH1154758A (ja) * 1997-08-01 1999-02-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6392277B1 (en) * 1997-11-21 2002-05-21 Hitachi, Ltd. Semiconductor device
DE69839780D1 (de) * 1997-12-19 2008-09-04 Advanced Micro Devices Inc Silizium auf eine isolator-konfiguration welche mit der massen-cmos-architektur kompatibel ist
US6121659A (en) * 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09223802A (ja) * 1996-02-15 1997-08-26 Toshiba Corp 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487045B1 (ko) * 2001-12-20 2005-05-03 미쓰비시덴키 가부시키가이샤 반도체장치의 제조방법

Also Published As

Publication number Publication date
KR20010050860A (ko) 2001-06-25
JP2001111056A (ja) 2001-04-20
TW468279B (en) 2001-12-11
CN1292572A (zh) 2001-04-25
CN1157794C (zh) 2004-07-14
US6545318B1 (en) 2003-04-08

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