CN1157794C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN1157794C
CN1157794C CNB001306316A CN00130631A CN1157794C CN 1157794 C CN1157794 C CN 1157794C CN B001306316 A CNB001306316 A CN B001306316A CN 00130631 A CN00130631 A CN 00130631A CN 1157794 C CN1157794 C CN 1157794C
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CN
China
Prior art keywords
region
conductivity type
impurity
oxide film
semiconductor
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Expired - Fee Related
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CNB001306316A
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English (en)
Chinese (zh)
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CN1292572A (zh
Inventor
���峽Ҳ
国清辰也
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN1292572A publication Critical patent/CN1292572A/zh
Application granted granted Critical
Publication of CN1157794C publication Critical patent/CN1157794C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6706—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device for preventing leakage current 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

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  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB001306316A 1999-10-06 2000-10-08 半导体装置及其制造方法 Expired - Fee Related CN1157794C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP285269/1999 1999-10-06
JP28526999A JP2001111056A (ja) 1999-10-06 1999-10-06 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN1292572A CN1292572A (zh) 2001-04-25
CN1157794C true CN1157794C (zh) 2004-07-14

Family

ID=17689325

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB001306316A Expired - Fee Related CN1157794C (zh) 1999-10-06 2000-10-08 半导体装置及其制造方法

Country Status (5)

Country Link
US (1) US6545318B1 (enExample)
JP (1) JP2001111056A (enExample)
KR (1) KR100397096B1 (enExample)
CN (1) CN1157794C (enExample)
TW (1) TW468279B (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787422B2 (en) * 2001-01-08 2004-09-07 Chartered Semiconductor Manufacturing Ltd. Method of body contact for SOI mosfet
JP2002246600A (ja) * 2001-02-13 2002-08-30 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4322453B2 (ja) * 2001-09-27 2009-09-02 株式会社東芝 半導体装置およびその製造方法
JP4139105B2 (ja) 2001-12-20 2008-08-27 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2004072063A (ja) * 2002-06-10 2004-03-04 Nec Electronics Corp 半導体装置及びその製造方法
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
JP2004221301A (ja) * 2003-01-15 2004-08-05 Seiko Instruments Inc 半導体装置とその製造方法
WO2004109810A1 (en) * 2003-06-11 2004-12-16 Koninklijke Philips Electronics N.V. Prevention of parasitic channel in an integrated soi process
US20050072975A1 (en) * 2003-10-02 2005-04-07 Shiao-Shien Chen Partially depleted soi mosfet device
KR100574971B1 (ko) * 2004-02-17 2006-05-02 삼성전자주식회사 멀티-게이트 구조의 반도체 소자 및 그 제조 방법
US6998684B2 (en) * 2004-03-31 2006-02-14 International Business Machines Corporation High mobility plane CMOS SOI
KR101155943B1 (ko) * 2004-04-28 2012-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Ｍｏｓ 캐패시터 및 반도체 장치
JP3898715B2 (ja) * 2004-09-09 2007-03-28 株式会社東芝 半導体装置およびその製造方法
JP2007184553A (ja) * 2005-12-06 2007-07-19 Sanyo Electric Co Ltd 半導体装置及びその製造方法
US7566630B2 (en) * 2006-01-18 2009-07-28 Intel Corporation Buried silicon dioxide / silicon nitride bi-layer insulators and methods of fabricating the same
EP1863090A1 (en) 2006-06-01 2007-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US20080217727A1 (en) * 2007-03-11 2008-09-11 Skyworks Solutions, Inc. Radio frequency isolation for SOI transistors
JP5658916B2 (ja) * 2009-06-26 2015-01-28 株式会社半導体エネルギー研究所 半導体装置
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
CN101872737A (zh) * 2010-01-28 2010-10-27 中国科学院上海微系统与信息技术研究所 一种抑制soi浮体效应的mos结构及其制作方法
US8461005B2 (en) * 2010-03-03 2013-06-11 United Microelectronics Corp. Method of manufacturing doping patterns
KR101870809B1 (ko) * 2016-06-21 2018-08-02 현대오트론 주식회사 전력 반도체 소자

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124243A (ja) 1982-01-21 1983-07-23 Toshiba Corp 半導体装置の製造方法
US5145802A (en) * 1991-11-12 1992-09-08 United Technologies Corporation Method of making SOI circuit with buried connectors
US5463238A (en) * 1992-02-25 1995-10-31 Seiko Instruments Inc. CMOS structure with parasitic channel prevention
US5359219A (en) * 1992-12-04 1994-10-25 Texas Instruments Incorporated Silicon on insulator device comprising improved substrate doping
JP2806277B2 (ja) * 1994-10-13 1998-09-30 日本電気株式会社 半導体装置及びその製造方法
JPH08181316A (ja) * 1994-12-22 1996-07-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3462301B2 (ja) 1995-06-16 2003-11-05 三菱電機株式会社 半導体装置及びその製造方法
JP3376204B2 (ja) 1996-02-15 2003-02-10 株式会社東芝 半導体装置
US5767549A (en) * 1996-07-03 1998-06-16 International Business Machines Corporation SOI CMOS structure
US5770875A (en) 1996-09-16 1998-06-23 International Business Machines Corporation Large value capacitor for SOI
US6133608A (en) * 1997-04-23 2000-10-17 International Business Machines Corporation SOI-body selective link method and apparatus
JPH1154758A (ja) * 1997-08-01 1999-02-26 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6392277B1 (en) * 1997-11-21 2002-05-21 Hitachi, Ltd. Semiconductor device
KR100562539B1 (ko) * 1997-12-19 2006-03-22 어드밴스드 마이크로 디바이시즈, 인코포레이티드 벌크 씨모스 구조와 양립 가능한 에스오아이 구조
US6121659A (en) * 1998-03-27 2000-09-19 International Business Machines Corporation Buried patterned conductor planes for semiconductor-on-insulator integrated circuit
US6072217A (en) * 1998-06-11 2000-06-06 Sun Microsystems, Inc. Tunable threshold SOI device using isolated well structure for back gate

Also Published As

Publication number Publication date
KR20010050860A (ko) 2001-06-25
US6545318B1 (en) 2003-04-08
CN1292572A (zh) 2001-04-25
JP2001111056A (ja) 2001-04-20
TW468279B (en) 2001-12-11
KR100397096B1 (ko) 2003-09-06

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