KR100381807B1 - 액정 표시 장치의 제조 장치 및 액정 표시 장치의 제조 방법 - Google Patents

액정 표시 장치의 제조 장치 및 액정 표시 장치의 제조 방법 Download PDF

Info

Publication number
KR100381807B1
KR100381807B1 KR10-2001-0003540A KR20010003540A KR100381807B1 KR 100381807 B1 KR100381807 B1 KR 100381807B1 KR 20010003540 A KR20010003540 A KR 20010003540A KR 100381807 B1 KR100381807 B1 KR 100381807B1
Authority
KR
South Korea
Prior art keywords
film
substrate
cleaning
chamber
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0003540A
Other languages
English (en)
Korean (ko)
Other versions
KR20010078048A (ko
Inventor
구보타다케시
고마츠노리카즈
Original Assignee
미쓰비시덴키 가부시키가이샤
세이코 엡슨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤, 세이코 엡슨 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20010078048A publication Critical patent/KR20010078048A/ko
Application granted granted Critical
Publication of KR100381807B1 publication Critical patent/KR100381807B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/137—Associated with semiconductor wafer handling including means for charging or discharging wafer cassette
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/14—Wafer cassette transporting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Thin Film Transistor (AREA)
KR10-2001-0003540A 2000-01-26 2001-01-22 액정 표시 장치의 제조 장치 및 액정 표시 장치의 제조 방법 Expired - Fee Related KR100381807B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-017223 2000-01-26
JP2000017223A JP3998386B2 (ja) 2000-01-26 2000-01-26 液晶表示装置の製造装置および液晶表示装置の製造方法

Publications (2)

Publication Number Publication Date
KR20010078048A KR20010078048A (ko) 2001-08-20
KR100381807B1 true KR100381807B1 (ko) 2003-04-26

Family

ID=18544249

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0003540A Expired - Fee Related KR100381807B1 (ko) 2000-01-26 2001-01-22 액정 표시 장치의 제조 장치 및 액정 표시 장치의 제조 방법

Country Status (4)

Country Link
US (1) US6461437B1 (enExample)
JP (1) JP3998386B2 (enExample)
KR (1) KR100381807B1 (enExample)
CN (1) CN1196173C (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI270626B (en) * 2002-04-23 2007-01-11 Display Mfg Service Co Ltd Wet processing bath and fluid supplying system for liquid crystal display manufacturing equipment
JP4219799B2 (ja) * 2003-02-26 2009-02-04 大日本スクリーン製造株式会社 基板処理装置
JP4833512B2 (ja) * 2003-06-24 2011-12-07 東京エレクトロン株式会社 被処理体処理装置、被処理体処理方法及び被処理体搬送方法
DE20321795U1 (de) * 2003-12-11 2010-03-04 Voith Patent Gmbh Vorrichtung zum Reinigen wenigsten einer Prozesskammer zum Beschichten wenigstens eines Substrats
US7422653B2 (en) * 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
US8075953B2 (en) * 2005-09-15 2011-12-13 Hiap L. Ong and Kyoritsu Optronics Co., Ltd Thin organic alignment layers with a batch process for liquid crystal displays
JP4765986B2 (ja) * 2007-03-23 2011-09-07 村田機械株式会社 搬送システム
JP5190215B2 (ja) * 2007-03-30 2013-04-24 東京エレクトロン株式会社 ターボ分子ポンプの洗浄方法
KR20130041089A (ko) * 2010-06-21 2013-04-24 가부시키가이샤 알박 기판 반전 장치, 진공 성막 장치 및 기판 반전 방법
CN103250230B (zh) * 2010-12-13 2016-08-31 Tp太阳能公司 掺杂剂涂布系统以及涂布蒸气化掺杂化合物于光伏太阳能晶圆的方法
JP5472283B2 (ja) * 2011-12-21 2014-04-16 株式会社安川電機 ロボットのアーム構造およびロボット
US9837271B2 (en) 2014-07-18 2017-12-05 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US9443730B2 (en) * 2014-07-18 2016-09-13 Asm Ip Holding B.V. Process for forming silicon-filled openings with a reduced occurrence of voids
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
CN109712906B (zh) * 2017-10-25 2021-05-11 长鑫存储技术有限公司 具有清洗功能的晶圆存储装置及半导体生产设备
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
CN118086860A (zh) * 2024-04-29 2024-05-28 成都晨发泰达航空科技股份有限公司 一种转子叶片化学气相沉积铝涂层装置及方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4406709A (en) * 1981-06-24 1983-09-27 Bell Telephone Laboratories, Incorporated Method of increasing the grain size of polycrystalline materials by directed energy-beams
NL8103979A (nl) * 1981-08-26 1983-03-16 Bok Edward Methode en inrichting voor het aanbrengen van een film vloeibaar medium op een substraat.
US4827954A (en) * 1982-11-23 1989-05-09 Interlab, Inc. Automated work transfer system having an articulated arm
JPS6162739A (ja) * 1984-09-03 1986-03-31 Sanki Eng Co Ltd クリ−ントンネル
JPH0736418B2 (ja) * 1986-05-19 1995-04-19 富士通株式会社 ウエーハキャリア
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
US5024570A (en) * 1988-09-14 1991-06-18 Fujitsu Limited Continuous semiconductor substrate processing system
JPH05218176A (ja) * 1992-02-07 1993-08-27 Tokyo Electron Tohoku Kk 熱処理方法及び被処理体の移載方法
US6391117B2 (en) * 1992-02-07 2002-05-21 Canon Kabushiki Kaisha Method of washing substrate with UV radiation and ultrasonic cleaning
JPH05271973A (ja) * 1992-03-25 1993-10-19 Orc Mfg Co Ltd 紫外線洗浄方法
JPH05315310A (ja) * 1992-05-01 1993-11-26 Kawasaki Steel Corp 半導体基板の湿式洗浄方法及び湿式洗浄装置
EP0598394A3 (en) * 1992-11-16 1997-07-16 Tokyo Electron Ltd Method and apparatus for manufacturing a liquid crystal display substrate, and apparatus and method for evaluating semiconductor crystals.
DE69304038T2 (de) * 1993-01-28 1996-12-19 Applied Materials Inc Vorrichtung für ein Vakuumverfahren mit verbessertem Durchsatz
JP3120395B2 (ja) * 1993-03-10 2000-12-25 東京エレクトロン株式会社 処理装置
US5474410A (en) * 1993-03-14 1995-12-12 Tel-Varian Limited Multi-chamber system provided with carrier units
US5527390A (en) * 1993-03-19 1996-06-18 Tokyo Electron Kabushiki Treatment system including a plurality of treatment apparatus
TW276353B (enExample) * 1993-07-15 1996-05-21 Hitachi Seisakusyo Kk
TW273574B (enExample) * 1993-12-10 1996-04-01 Tokyo Electron Co Ltd
US5472086A (en) * 1994-03-11 1995-12-05 Holliday; James E. Enclosed sealable purgible semiconductor wafer holder
TW294821B (enExample) * 1994-09-09 1997-01-01 Tokyo Electron Co Ltd
JP3288200B2 (ja) * 1995-06-09 2002-06-04 東京エレクトロン株式会社 真空処理装置
US5667592A (en) * 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
US6039059A (en) * 1996-09-30 2000-03-21 Verteq, Inc. Wafer cleaning system
JP3330300B2 (ja) * 1997-02-28 2002-09-30 東京エレクトロン株式会社 基板洗浄装置
US6045620A (en) * 1997-07-11 2000-04-04 Applied Materials, Inc. Two-piece slit valve insert for vacuum processing system
JP3425592B2 (ja) * 1997-08-12 2003-07-14 東京エレクトロン株式会社 処理装置
JPH11102849A (ja) * 1997-09-17 1999-04-13 Lsi Logic Corp 半導体ウエハ上のパーティクル除去方法及び装置
US6270582B1 (en) * 1997-12-15 2001-08-07 Applied Materials, Inc Single wafer load lock chamber for pre-processing and post-processing wafers in a vacuum processing system
TW444275B (en) * 1998-01-13 2001-07-01 Toshiba Corp Processing device, laser annealing device, laser annealing method, manufacturing device and substrate manufacturing device for panel display
US6270306B1 (en) * 1998-01-14 2001-08-07 Applied Materials, Inc. Wafer aligner in center of front end frame of vacuum system
US6343609B1 (en) * 1998-08-13 2002-02-05 International Business Machines Corporation Cleaning with liquified gas and megasonics
US6337174B1 (en) * 1998-09-17 2002-01-08 Samsung Electronics Co., Ltd. Method of stripping a photoresist from a semiconductor substrate dimethylacetamide or a combination of monoethanolamine and dimethylsulfoxide

Also Published As

Publication number Publication date
US6461437B1 (en) 2002-10-08
JP3998386B2 (ja) 2007-10-24
CN1196173C (zh) 2005-04-06
KR20010078048A (ko) 2001-08-20
JP2001210693A (ja) 2001-08-03
CN1307326A (zh) 2001-08-08

Similar Documents

Publication Publication Date Title
KR100381807B1 (ko) 액정 표시 장치의 제조 장치 및 액정 표시 장치의 제조 방법
US7098087B2 (en) Manufacturing method of semiconductor device
US20060105114A1 (en) Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US6467976B2 (en) Coating and developing system
JPH01319944A (ja) 半導体基板表面に薄膜を形成する方法およびその装置
JPH09320961A (ja) 半導体製造装置及び薄膜トランジスタの製造方法
US20010012667A1 (en) Clustered system and method for formation of integrated circuit devices
JP5142414B2 (ja) 真空処理装置
KR101238152B1 (ko) 기판 프로세싱 방법 및 실리콘 함유막 형성 방법
US7011996B2 (en) Method of manufacturing thin film transistor
TWI434337B (zh) 旋轉式處理裝置，處理系統及旋轉式處理方法
KR100512683B1 (ko) 절연막 제조장치
JP2001085701A (ja) 多層構造を有する素子、その素子の製造装置、及びその素子の製造方法
US6860964B2 (en) Etch/strip apparatus integrated with cleaning equipment
US20060240647A1 (en) Film control method and device thereof
KR20040028578A (ko) 기판처리장치 및 기판처리방법
JP2761579B2 (ja) 基板処理装置
JP4869495B2 (ja) 半導体装置の製造方法
KR100221352B1 (ko) 다결정 실리콘의 형성방법 및 형성장치
JP2000243802A (ja) 半導体装置の製造方法及び装置
JP4001906B2 (ja) 半導体装置の作製方法
JP2000021891A (ja) 基板処理装置およびその方法
KR100293524B1 (ko) 비진공 공정을 이용한 결정화장치 및 방법
JP2004356598A (ja) 基板処理方法及び電気光学装置の製造方法
JP2006332589A (ja) 膜制御方法およびその装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20100413

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20110415

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110415

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000