US20060240647A1 - Film control method and device thereof - Google Patents
Film control method and device thereof Download PDFInfo
- Publication number
- US20060240647A1 US20060240647A1 US11/279,977 US27997706A US2006240647A1 US 20060240647 A1 US20060240647 A1 US 20060240647A1 US 27997706 A US27997706 A US 27997706A US 2006240647 A1 US2006240647 A1 US 2006240647A1
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- Prior art keywords
- film
- silicon film
- substrate
- amorphous silicon
- glass substrate
- Prior art date
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- Abandoned
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- 238000000034 method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims abstract description 159
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 81
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 65
- 238000005224 laser annealing Methods 0.000 claims abstract description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 229920005591 polysilicon Polymers 0.000 claims abstract description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 238000000859 sublimation Methods 0.000 claims description 17
- 230000008022 sublimation Effects 0.000 claims description 17
- 150000002222 fluorine compounds Chemical class 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 171
- 239000011521 glass Substances 0.000 abstract description 106
- 239000010409 thin film Substances 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 35
- 238000000137 annealing Methods 0.000 description 22
- 230000003287 optical effect Effects 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 13
- 239000011229 interlayer Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
Definitions
- the present invention relates to a film control method for controlling a silicon film formed on a substrate and a device thereof.
- a structure described in, for example, Japanese Laid-Open Patent Publication No. 2000-150411 has been conventionally known as a composite type laser annealing device as a film control device of this type.
- the laser annealing device is a device for irradiating an amorphous silicon film deposited on a glass substrate by a plasma CVD device or the like with an excimer laser beam to reform the amorphous silicon film into a polysilicon film.
- the laser annealing device is provided with a cassette station in which a plurality of glass substrates on which the amorphous silicon films are deposited are stored. A spin clean unit is attached to the circumference of the cassette station.
- the spin clean unit spin cleans the amorphous silicon film formed on the substrate taken out from the cassette station by a conveyance robot using hydrofluoric acid (HF), and cleans and removes a surface oxide film and foreign particles or the like formed on the amorphous silicon film.
- HF hydrofluoric acid
- an annealing chamber is provided around the cassette station.
- the glass substrate in which the surface of the amorphous silicon film is spin cleaned by the spin clean unit is conveyed to the annealing chamber by the conveyance robot.
- the annealing chamber irradiates the amorphous silicon film formed on the glass substrate with an excimer laser beam and laser-anneals the amorphous silicon film to reform the amorphous silicon film into polysilicon film.
- an object of the invention is to provide a film control method capable of obtaining a silicon film having a desired characteristic and a device thereof.
- a film control method of the present invention includes a clean step of cleaning a surface of a silicon film provided on a substrate using a fluorine compound, a sublimation step of sublimating fluoride contained in the fluorine compound adhered to the surface of the silicon film provided on the substrate cleaned by the clean step, and a film control step of controlling the silicon film of the substrate in which the fluoride is sublimated in the sublimation step.
- the fluoride contained in the fluorine compound adhered to the surface of the silicon film of the substrate is sublimated, and the silicon film of the substrate is then controlled.
- the silicon film is not controlled with the fluoride contained in the fluorine compound adhered to the surface of the silicon film of the substrate. Therefore, since problems such as charges left in the silicon film can be prevented, the silicon film having the desired characteristics can be obtained.
- FIG. 1 is an explanatory constitution diagram showing a film control device according to a first embodiment of the present invention.
- FIG. 2 is an explanatory sectional view showing a liquid crystal display manufactured by the film control device.
- FIG. 3 is an explanatory sectional view showing a glass substrate before being cleaned by a clean means of the film control device.
- FIG. 4 is an explanatory sectional view showing the glass substrate after being cleaned by the clean means of the film control device.
- FIG. 5 is an explanatory sectional view showing the glass substrate after being made to wait by a waiting means of the film control device.
- FIG. 6 is a graph showing the TFT characteristics of a thin film transistor manufactured by a polysilicon film controlled by the film control device.
- FIG. 7 is a graph showing the threshold characteristics of the thin film transistor when changing the holding time of the substrate by a sublimation means of the film control device.
- FIG. 8 is an explanatory constitution diagram showing a film control device according to a second embodiment of the present invention.
- FIG. 9 is an explanatory sectional view showing a glass substrate after being laser annealed by a laser annealing means after immediately being cleaned by the clean means.
- FIG. 1 the structure of a film control device according to a first embodiment of the present invention will be explained referring to FIG. 1 .
- numeral 1 denotes a composite type excimer laser annealing device as the film control device.
- the composite type excimer laser annealing device 1 is provided with a cassette station 11 .
- a plurality of glass substrates 3 are set in the cassette station 11 .
- Each of the glass substrates 3 has the shape of a rectangular flat plate, and has a surface on which an amorphous silicon (a-Si) film 2 is deposited and laminated by a plasma CVD device (not shown).
- the cassette station 11 has a long cassette setting part 13 having the shape of a rectangular plate.
- a plurality of cassettes 12 in which a plurality of (for example, 25 pieces) glass substrates 3 are stored are set in the cassette setting part 13 .
- a long substrate conveyance part 14 having the shape of a rectangular plate is provided in the cassette setting part 13 so as to be adjacent to one side of the cassette setting part 13 .
- the substrate conveyance part 14 takes out and conveys the glass substrate 3 from the inside of the cassette 12 set in the cassette setting part 13 .
- a conveyance robot 15 is attached to the substrate conveyance part 14 .
- the conveyance robot 15 takes out and conveys the glass substrate 3 sequentially from the inside of the cassette 12 , and conveys and stores the glass substrate 3 into the cassette 12 .
- a spin clean unit 21 as a clean means is attached to one end part of the longitudinal direction of the substrate conveyance part 14 .
- the spin clean unit 21 spin cleans the glass substrate 3 conveyed by the conveyance robot 15 of the substrate conveyance part 14 .
- the spin clean unit 21 is set around the cassette station 11 .
- the spin clean unit 21 cleans a surface oxide layer 4 formed by the oxidation of the surface of the amorphous silicon film 2 formed on the glass substrate 3 and foreign particles or the like adhered to the surface of the amorphous silicon film 2 to remove them.
- the spin clean unit 21 uses an aqueous solution obtained by mixing hydrofluoric acid (HF) as a fluorine compound with pure water (H 2 O) as a detergent.
- HF hydrofluoric acid
- H 2 O pure water
- a waiting unit 26 is attached to the cassette setting part 13 of the cassette station 11 .
- the waiting unit 26 is a sublimation means as a waiting means for holding the glass substrate 3 spin cleaned in the spin clean unit 21 for a predetermined time and making the glass substrate 3 wait. That is, the waiting unit 26 is a means for removing charges adhered to the surface of the amorphous silicon film 2 formed on the glass substrate 3 .
- the waiting unit 26 is provided in the cassette setting part 13 , and is provided as a part of the cassette station 11 .
- the waiting unit 26 is constituted so that the plurality of glass substrates 3 can be loaded. Furthermore, the waiting unit 26 is provided parallel to the cassette 12 set in the cassette setting part 13 , and is provided at one end side of the cassette setting part 13 of the side of the spin clean unit 21 .
- the waiting unit 26 makes the glass substrate 3 cleaned in the spin clean unit 21 wait and leaves the glass substrate 3 for a predetermined time, for example, for 5 minutes or more, and more preferably for 10 to 20 minutes.
- the waiting unit 26 sublimates active fluoride (F + ) 5 adhered to the surface of the amorphous silicon film 2 formed on the glass substrate 3 .
- the active fluoride 5 is the component of the hydrofluoric acid in the detergent, and is a substance for generating plus charges in the polysilicon film 6 and charged in a positive charge when the active fluoride 5 enters into the polysilicon film 6 shown in FIG. 5 .
- the waiting unit 26 evaporates and sublimates the molecules having the plus (+) charges adhered and left on the surface of the amorphous silicon film 2 of the glass substrate 3 , that is, the active fluoride 5 .
- the number of the glass substrates 3 capable of being stored is set larger (the storage time of the glass substrate 3 /the treatment time due to the laser annealing device 31 ) in view of the prevention in the reduction of the laser annealing treatment capability due to the laser annealing device 31 .
- the number of storing steps of the glass substrate 3 is set to, for example, five pieces.
- a laser annealing device 31 which is a laser annealing means as a film controlling means is attached to one side part of the substrate conveyance part 14 of the cassette station 11 .
- the laser annealing device 31 excimer laser anneals the amorphous silicon film 2 formed on the glass substrate 3 to reform the amorphous silicon film 2 into the polysilicon (p-Si) film.
- the laser annealing device 31 is an excimer laser annealing means, and is set around the cassette station 11 . Specifically, as shown in FIG.
- the laser annealing device 31 melts and recrystallizes the amorphous silicon film 2 at a speed of 6 mm/s by the irradiation of an excimer laser beam to reform the amorphous silicon film 2 into the polysilicon film 6 .
- the glass substrate 3 in which the active fluoride 5 adhered by the cleaning due to the spin clean unit 21 is sublimated by the waiting unit 26 is conveyed into the laser annealing device 31 .
- the laser annealing device 31 irradiates the amorphous silicon film 2 formed on the glass substrate 3 with the excimer laser beam and excimer laser anneals the amorphous silicon film 2 to crystallize the amorphous silicon film 2 , thereby reforming the amorphous silicon film 2 into the polysilicon film 6 .
- the laser annealing device 31 is provided with an annealing chamber 32 in which the glass substrate 3 cleaned by the spin clean unit 21 is conveyed and stored by the conveyance robot 15 .
- the glass substrate 3 conveyed by the conveyance robot 15 is stored in the annealing chamber 32 , and the annealing chamber 32 reforms the amorphous silicon film 2 formed on the glass substrate 3 into the polysilicon film 6 .
- the laser annealing device 31 is provided with a laser oscillating device 33 as a laser oscillating means for oscillating the excimer laser beam.
- a first optical system 34 and a second optical system 35 are attached between the laser oscillating device 33 and the annealing chamber 32 .
- the first optical system 34 and the second optical system 35 process the excimer laser beam oscillated from the laser oscillating device 33 optically, and irradiate the surface of the amorphous silicon film 2 formed on the glass substrate 3 stored and set in the annealing chamber 32 with the excimer laser beam optically processed.
- the first optical system 34 is attached between the laser oscillating device 33 and the second optical system 35 .
- the first optical system 34 is provided at a position into which the excimer laser beam oscillated from the laser oscillating device 33 enters.
- the second optical system 35 is attached between the annealing chamber 32 and the first optical system 34 .
- the second optical system 35 is provided at a position into which the excimer laser beam optically processed by the first optical system 34 enters. Furthermore, the second optical system 35 processes the excimer laser beam entered into the second optical system 35 optically, and irradiates the amorphous silicon film 2 formed on the glass substrate 3 in the annealing chamber 32 with the excimer laser beam optically processed.
- numeral 41 denotes a liquid crystal display element as the liquid crystal display device.
- the liquid crystal display element 41 is a low-temperature polysilicon thin film transistor (TFT) liquid crystal display.
- the liquid crystal display element 41 is provided with an array substrate 42 having the shape of a generally rectangular flat plate.
- the array substrate 42 is provided with the glass substrate 3 being nearly transparent and having insulation.
- An insulating undercoat layer 43 for preventing the diffusion of impurities from the glass substrate 3 is deposited on the surface of the glass substrate 3 .
- the under coat layer 43 has a silicon nitride film (SiN x ) and a silicon oxide film (SiO x ), and is deposited and formed by a plasma CVD method.
- a semiconductor layer 44 as an active layer and a capacity part 45 are provided like an island on the undercoat layer 43 .
- Each of the semiconductor layer 44 and capacity part 45 is composed by the polysilicon film 6 .
- a channel region 46 is provided at the central part of the semiconductor layer 44 , and a source region 47 and a drain region 48 are respectively provided at both sides of the channel region 46 .
- a gate oxide film 51 as a gate insulating film such as the silicon oxide film having insulation is deposited on the under coat layer 43 containing the semiconductor layer 44 and the capacity part 45 .
- a gate electrode 52 is laminated and formed so as to face the channel region 46 of the semiconductor layer 44 on the gate oxide film 51 .
- the gate electrode 52 is made of a molybdenum-tungsten alloy (MoW) or the like.
- a p-type thin film transistor 53 as a switching element is formed by the gate electrode 52 , the gate oxide film 51 and the semiconductor layer 44 .
- a capacity wiring part 54 is laminated and formed so as to face the capacity part 45 on the gate oxide film 51 .
- the capacity wiring part 54 is made of a molybdenum-tungsten alloy (MoW) or the like, and is formed by the same process as that of the gate electrode 52 . Also, the capacity wiring part 54 is made of the same material as that of the gate electrode 52 .
- An auxiliary capacity 55 is formed by the capacity wiring part 54 , the gate oxide film 51 and the capacity part 45 .
- An interlayer insulating film 56 formed by the silicon oxide film or the like is deposited on the gate oxide film 51 containing the gate electrode 52 and the capacity wiring part 54 .
- First contact holes 57 , 58 , and 59 are formed in the interlayer insulating film 56 and the gate oxide film 51 .
- the first contact holes 57 , 58 , and 59 pass through the interlayer insulating film 56 and the gate oxide film 51 and a recommunicated with the source region 47 , drain region 48 and capacity part 45 of the semiconductor layer 44 .
- a source electrode 61 is laminated on the interlayer insulating film 56 containing the first contact hole 57 penetrating to the source region 47 of the semiconductor layer 44 . Therefore, the source electrode 61 is electrically connected to the source region 47 of the semiconductor layer 44 .
- a drain electrode 62 is laminated on the interlayer insulating film 56 containing the first contact hole 58 penetrating to the drain region 48 of the semiconductor layer 44 and the first contact hole 59 penetrating to the capacity part 45 . Therefore, the drain electrode 62 is electrically connected to the drain region 48 of the semiconductor layer 44 , and is electrically connected to the capacity part 45 . Therefore, the drain region 48 of the semiconductor layer 44 is electrically connected to the capacity part 45 by the drain electrode 62 .
- the source electrode 61 and the drain electrode 62 is made of low-resistance metal or the like such as aluminum (Al) or the like.
- a passivation film 63 as a protective film is laminated on the interlayer insulating film 56 containing the source electrode 61 and the drain electrode 62 .
- a color filter layer 64 sequentially colored to colors of more than at least the three primary colors of light, for example, three colors of red, blue and green is laminated and deposited on the passivation film 63 .
- a second contact hole 65 passing through the color filter layer 64 and the passivation film 63 and penetrating to the drain region 48 is formed in the color filter layer 64 and the passivation film 63 .
- a pixel electrode 66 is laminated and deposited on the color filter layer 64 containing the second contact hole 65 .
- the pixel electrode 66 is electrically connected to the drain electrode 62 via the second contact hole 65 .
- An oriented film 67 is laminated and deposited on the pixel electrode 66 .
- a counter substrate 71 is arranged so as to face the oriented film 67 .
- the counter substrate 71 is provided with a glass substrate 72 being nearly transparent and having insulation.
- a counter electrode 73 is laminated and provided on a surface of the glass substrate 72 facing the oriented film 67 .
- a liquid crystal layer 74 composed by injecting and sealing a liquid crystal composition is formed as a light modulation layer between the counter electrode 73 and the oriented film 67 of the array substrate 42 .
- the amorphous silicon film 2 is deposited on the undercoat layer 43 .
- the glass substrate 3 on which the amorphous silicon film 2 is deposited is stored in the cassette 12 , and the cassette 12 in which the glass substrate 3 is stored is set in the cassette setting part 13 of the cassette station 11 .
- the glass substrate 3 is taken out from the cassette 12 set in the cassette setting part 13 by the conveyance robot 15 in the substrate conveyance part 14 of the cassette station 11 , and the glass substrate 3 is conveyed into the spin clean unit 21 .
- the glass substrate 3 conveyed into the spin clean unit 21 is cleaned by the detergent obtained by mixing hydrofluoric acid (HF) with pure water (H 2 O) while the glass substrate 3 is horizontally rotated in the spin clean unit 21 .
- HF hydrofluoric acid
- H 2 O pure water
- the glass substrate 3 conveyed into the spin clean unit 21 is cleaned in the spin clean unit 21 , the glass substrate 3 is rinsed by pure water and is dried.
- the glass substrate 3 cleaned and dried by the spin clean unit 21 is taken out from the inside of the spin clean unit 21 by the conveyance robot 15 , and is conveyed into the waiting unit 26 via the substrate conveyance part 14 .
- the glass substrate 3 is left and is made to wait in the waiting unit 26 for a predetermined time, for example, for 15 minutes.
- the active fluoride 5 adhered to the surface of the amorphous silicon film 2 formed on the glass substrate 3 is sublimated.
- the glass substrate 3 made to wait in the waiting unit 26 is taken out from the waiting unit by the conveyance robot 15 .
- the glass substrate 3 is then conveyed into the annealing chamber 32 of the laser annealing device 31 via the substrate conveyance part 14 , and is set in the annealing chamber 32 .
- the excimer laser beam is oscillated from the laser oscillating device 33 of the laser annealing device 31 .
- the excimer laser beam is optically processed by the first optical system 34 and the second optical system 35 , and the amorphous silicon film 2 formed on the glass substrate 3 in the annealing chamber 32 is irradiated with the excimer laser beam.
- the amorphous silicon film 2 is laser annealed, and thereby the amorphous silicon film 2 is crystallized to reform the amorphous silicon film 2 into the polysilicon film 6 .
- the glass substrate 2 in which the polysilicon film 6 is formed in the annealing chamber 32 is taken out from the inside of the annealing chamber by the conveyance robot 15 , and the glass substrate 2 is conveyed into the predetermined cassette 12 set in the cassette setting part 13 of the cassette station 11 via the substrate conveyance part 14 .
- the cassette 12 in which the glass substrate 3 is stored is taken out from the cassette setting part 13 of the cassette station 11 .
- the polysilicon film 6 formed on the glass substrate 3 in the cassette 12 is patterned by photolithography and etching, and the gate oxide film 51 is then formed on the undercoat layer 43 containing the polysilicon film 6 by the plasma CVD method or the like.
- the source region 47 and the drain region 48 are formed at both sides of the polysilicon film 6 as the semiconductor layer 44 by photolithography and etching to form the thin film transistor 53 .
- the source region 47 and the drain region 48 are formed by using resist (not shown) at the time of etching processing the gate electrode 52 as a mask and by ion-doping impurities such as boron (B) and phosphorous (P).
- the channel region 46 is formed at the central part of the polysilicon film 6 located below the gate electrode 52 .
- the interlayer insulating film 56 is formed on the gate oxide film 51 containing the gate electrode 52 and the capacity wiring part 54 .
- the first contact hole 57 , 58 , and 59 are formed.
- the low-resistance metal is sputtered on the inter layer insulating film 56 containing the first contact holes 57 , 58 , and 59 , the low-resistance metal is patterned, and the source electrode 61 and the drain electrode 62 are formed.
- the passivation film 63 is formed on the interlayer insulating film 56 containing the source electrode 61 and the drain electrode 62 , and the color filter layer 64 is then formed, the second contact hole 65 is formed.
- the oriented film 67 is formed on the color filter layer 64 containing the pixel electrode 66 .
- the liquid crystal composition is injected and sealed between the counter electrode 73 of the counter substrate 71 and the oriented film 67 of the array substrate 42 . Thereby, the liquid crystal layer 74 is formed, and the liquid crystal display element 41 is produced.
- the amorphous silicon film 2 formed on the glass substrate 3 is laser annealed to reform the amorphous silicon film 2 into the polysilicon film 6
- the amorphous silicon film 2 is laser annealed with the active fluoride 5 adhered to the surface of the amorphous silicon film 2 and left. Therefore, the charges are left in the polysilicon film 6 even after the laser anneal.
- the glass substrate 3 is conveyed to the waiting unit 26 by the conveyance robot 15 , and is made to wait for about 15 minutes.
- the active fluoride 5 adhered to the surface of the amorphous silicon film 2 formed on the glass substrate 3 is sublimated, and the charges left on the amorphous silicon film 2 are removed.
- the glass substrate 3 in which the active fluoride 5 adhered to the surface of the amorphous silicon film 2 by making the glass substrate 3 wait in the waiting unit 26 is sublimated is conveyed to the annealing chamber 32 of the laser annealing device 31 by the conveyance robot 15 .
- the amorphous silicon film 2 formed on the glass substrate 3 is excimer laser annealed in the annealing chamber 32 to reform the amorphous silicon film 2 into the polysilicon film 6 . Therefore, the residuals of the charges in the polysilicon film 6 generated by laser annealing the amorphous silicon film 2 formed on the glass substrate 3 with the active fluoride 5 adhered to the surface of the amorphous silicon film 2 can be prevented.
- the amorphous silicon film 2 can be laser annealed with the active fluoride 5 not being adhered to the surface of the amorphous silicon film 2 formed on the glass substrate 3 to reform the amorphous silicon film 2 into the polysilicon film 6 . Therefore, as shown in FIG. 9 , since the charges or the active fluoride 6 do not leave residuals in the polysilicon film 6 and the grain boundary, as shown in FIG. 6 , the thin film transistor 53 formed by the polysilicon film 6 may have the desired threshold characteristics (V th ). Therefore, since the thin film transistor 53 having the desired TFT characteristics can be obtained, the generation of problems such as the defective image output and increase in power consumption of the liquid crystal display element 41 provided with the thin film transistor 53 can be prevented.
- the threshold characteristics of the thin film transistor 53 formed by the amorphous silicon film 2 formed on the glass substrate 3 made to wait in the waiting unit 26 are stabilized by setting the waiting time of the glass substrate 3 in the waiting unit 26 to 5 minutes or more. Furthermore, the threshold characteristics of the thin film transistor 53 formed on the glass substrate 3 can be further stabilized by setting the waiting time of the glass substrate 3 in the waiting unit 26 to 10 minutes or more.
- the threshold characteristics of the thin film transistor 53 formed from the amorphous silicon film 2 formed on the glass substrate 3 can be further stabilized by making the glass substrate 3 wait for a longer period of time using the waiting unit 26 .
- the waiting time in the waiting unit 26 of the glass substrate 3 is made longer than 20 minutes, it takes too much time to manufacture the liquid crystal display element 41 .
- the stability of the threshold characteristics of the thin film transistor 53 to the waiting time of the glass substrate 3 is hardly changed. Thereby, it is preferable that the waiting time in the waiting unit 26 of the glass substrate 3 is set to 10 minutes to 20 minutes.
- the waiting unit 26 is stored and attached in the cassette setting part 13 of the cassette station 11 in the above first embodiment. However, the waiting unit 26 can also be attached to the other end side of the substrate conveyance part 14 of the cassette station 11 as shown in the second embodiment shown in FIG. 8 .
- the waiting unit 26 is attached to the other end side of the substrate conveyance part 14 of the opposite side to the side to which the spin clean unit 21 is attached.
- the glass substrate 3 spin cleaned by the spin clean unit 21 is conveyed into the waiting unit 26 from the inside of the spin clean unit 21 by the conveyance robot 15 .
- the waiting unit 15 is attached to a position adjacent to the annealing chamber 32 of the laser annealing device 31 .
- the glass substrate 3 made to wait in the waiting unit 15 is conveyed into the annealing chamber 32 via the conveyance robot 15 .
- the glass substrate 3 in which the amorphous silicon film 2 is cleaned by the spin clean unit 21 is conveyed to the annealing chamber 32 of the laser annealing device 31 after the glass substrate 3 is made to wait in the waiting unit 26 , and is laser annealed, the same operation effect as that of the above first embodiment can be exhibited.
- the waiting unit 26 can be easily attached to the existing composite type excimer laser annealing device 1 by attaching the waiting unit 26 to the other end part of the substrate conveyance part 14 of the cassette station 11 , the versatility of the waiting unit 26 can be improved.
- a drying type waiting unit 26 for ventilating, spraying and drying hot nitrogen gas and air to the amorphous silicon film 2 formed on the glass substrate 3 , and a heated type waiting unit 26 for heating the amorphous silicon film 2 formed on the glass substrate 3 by an infrared lamp and a hot plate or the like can also be made to correspond and used.
- a fluoride collecting means for collecting the fluoride sublimated in the waiting unit 26 can also be attached to the waiting unit 26 .
- various substances having the plus charges adhered to the surface of the amorphous silicon film 2 can also be sublimated.
- the waiting unit 26 is attached in the cassette setting part 13 of the cassette station 11 or to the other end side of the substrate conveyance part 14 of the cassette station 11 .
- the waiting unit 26 may be attached to any position where the glass substrate 3 cleaned by the spin clean unit 21 can be conveyed into the annealing chamber 32 of the laser annealing device 31 after the glass substrate 3 is made to wait.
- the amorphous silicon film 2 formed on the glass substrate 3 is irradiated with the excimer laser beam by the laser annealing device 31 .
- a YAG (Yttrium-Aluminum-Garnet) Laser is oscillated from the laser oscillating device 33 of the laser annealing device 31 , and the amorphous silicon film 2 formed on the glass substrate 3 may be laser annealed by the YAG laser.
- the configuration for conveying the glass substrate 3 made to wait by the waiting unit 26 to the laser annealing device 31 to laser anneal the glass substrate 3 is explained, even when the glass substrate 3 made to wait by the waiting unit 26 is conveyed to film control devices such as a plasma CVD (Chemical Vapor Deposition) device, a PVD (Physical Vapor Deposition) device and a sputtering device for depositing various thin films on the amorphous silicon film 2 of the glass substrate 3 to control the various thin films, the film control devices can be made to correspond and used.
- a plasma CVD Chemical Vapor Deposition
- PVD Physical Vapor Deposition
- sputtering device for depositing various thin films on the amorphous silicon film 2 of the glass substrate 3 to control the various thin films
- the switching elements such as the other Thin Film Diode (TFD) using the polysilicon film 6 can be made to correspond and used.
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Abstract
The surface of an amorphous silicon film formed on a glass substrate is cleaned by hydrofluoric acid in a spin clean unit. The glass substrate is conveyed to a waiting unit where the glass substrate is made to wait for about 15 minutes. Active fluoride adhered on the amorphous silicon film is sublimated. The glass substrate in which the active fluoride is sublimated is conveyed into a laser annealing device where the amorphous silicon film is excimer laser annealed to reform the amorphous silicon film into a polysilicon film. The residuals of the charges in the polysilicon film generated by excimer laser annealing the surface of the amorphous silicon film with the active fluoride adhered to the surface of the amorphous silicon film can be prevented. A thin film transistor having desired TFT characteristics can be manufactured.
Description
- The present application claims priority under 35 U.S.C. §119 to Japanese Patent Application No. 2005-126513 filed on Apr. 25, 2005. The content of the application is incorporated herein by reference in its entirety.
- The present invention relates to a film control method for controlling a silicon film formed on a substrate and a device thereof.
- A structure described in, for example, Japanese Laid-Open Patent Publication No. 2000-150411 has been conventionally known as a composite type laser annealing device as a film control device of this type. The laser annealing device is a device for irradiating an amorphous silicon film deposited on a glass substrate by a plasma CVD device or the like with an excimer laser beam to reform the amorphous silicon film into a polysilicon film. The laser annealing device is provided with a cassette station in which a plurality of glass substrates on which the amorphous silicon films are deposited are stored. A spin clean unit is attached to the circumference of the cassette station. The spin clean unit spin cleans the amorphous silicon film formed on the substrate taken out from the cassette station by a conveyance robot using hydrofluoric acid (HF), and cleans and removes a surface oxide film and foreign particles or the like formed on the amorphous silicon film.
- Furthermore, an annealing chamber is provided around the cassette station. The glass substrate in which the surface of the amorphous silicon film is spin cleaned by the spin clean unit is conveyed to the annealing chamber by the conveyance robot. The annealing chamber irradiates the amorphous silicon film formed on the glass substrate with an excimer laser beam and laser-anneals the amorphous silicon film to reform the amorphous silicon film into polysilicon film.
- However, when the amorphous silicon film formed on the glass substrate is cleaned by the spin clean unit, hydrofluoric acid is used as a detergent in the above laser annealing device. Therefore, active fluoride as the component of the hydrofluoric acid is left on the amorphous silicon film. Even after the amorphous silicon film is laser annealed, charges are left in the polysilicon film. Therefore, there is a problem in that the threshold voltage (Vth) of the thin film transistor formed of the polysilicon film is changed and a desired transistor characteristic (TFT characteristic) is not obtained.
- In order to solve the above problem, an object of the invention is to provide a film control method capable of obtaining a silicon film having a desired characteristic and a device thereof.
- A film control method of the present invention includes a clean step of cleaning a surface of a silicon film provided on a substrate using a fluorine compound, a sublimation step of sublimating fluoride contained in the fluorine compound adhered to the surface of the silicon film provided on the substrate cleaned by the clean step, and a film control step of controlling the silicon film of the substrate in which the fluoride is sublimated in the sublimation step.
- After the surface of the silicon film provided on the substrate is cleaned by using the fluorine compound, the fluoride contained in the fluorine compound adhered to the surface of the silicon film of the substrate is sublimated, and the silicon film of the substrate is then controlled. The silicon film is not controlled with the fluoride contained in the fluorine compound adhered to the surface of the silicon film of the substrate. Therefore, since problems such as charges left in the silicon film can be prevented, the silicon film having the desired characteristics can be obtained.
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FIG. 1 is an explanatory constitution diagram showing a film control device according to a first embodiment of the present invention. -
FIG. 2 is an explanatory sectional view showing a liquid crystal display manufactured by the film control device. -
FIG. 3 is an explanatory sectional view showing a glass substrate before being cleaned by a clean means of the film control device. -
FIG. 4 is an explanatory sectional view showing the glass substrate after being cleaned by the clean means of the film control device. -
FIG. 5 is an explanatory sectional view showing the glass substrate after being made to wait by a waiting means of the film control device. -
FIG. 6 is a graph showing the TFT characteristics of a thin film transistor manufactured by a polysilicon film controlled by the film control device. -
FIG. 7 is a graph showing the threshold characteristics of the thin film transistor when changing the holding time of the substrate by a sublimation means of the film control device. -
FIG. 8 is an explanatory constitution diagram showing a film control device according to a second embodiment of the present invention. -
FIG. 9 is an explanatory sectional view showing a glass substrate after being laser annealed by a laser annealing means after immediately being cleaned by the clean means. - Hereinafter, the structure of a film control device according to a first embodiment of the present invention will be explained referring to
FIG. 1 . - In
FIG. 1 ,numeral 1 denotes a composite type excimer laser annealing device as the film control device. The composite type excimerlaser annealing device 1 is provided with acassette station 11. A plurality ofglass substrates 3 are set in thecassette station 11. Each of theglass substrates 3 has the shape of a rectangular flat plate, and has a surface on which an amorphous silicon (a-Si)film 2 is deposited and laminated by a plasma CVD device (not shown). Thecassette station 11 has a longcassette setting part 13 having the shape of a rectangular plate. A plurality ofcassettes 12 in which a plurality of (for example, 25 pieces)glass substrates 3 are stored are set in thecassette setting part 13. - A long
substrate conveyance part 14 having the shape of a rectangular plate is provided in thecassette setting part 13 so as to be adjacent to one side of thecassette setting part 13. Thesubstrate conveyance part 14 takes out and conveys theglass substrate 3 from the inside of thecassette 12 set in thecassette setting part 13. Aconveyance robot 15 is attached to thesubstrate conveyance part 14. Theconveyance robot 15 takes out and conveys theglass substrate 3 sequentially from the inside of thecassette 12, and conveys and stores theglass substrate 3 into thecassette 12. - A spin
clean unit 21 as a clean means is attached to one end part of the longitudinal direction of thesubstrate conveyance part 14. The spinclean unit 21 spin cleans theglass substrate 3 conveyed by theconveyance robot 15 of thesubstrate conveyance part 14. The spinclean unit 21 is set around thecassette station 11. As shown inFIG. 3 , the spinclean unit 21 cleans asurface oxide layer 4 formed by the oxidation of the surface of theamorphous silicon film 2 formed on theglass substrate 3 and foreign particles or the like adhered to the surface of theamorphous silicon film 2 to remove them. Furthermore, thespin clean unit 21 uses an aqueous solution obtained by mixing hydrofluoric acid (HF) as a fluorine compound with pure water (H2O) as a detergent. After thesurface oxide layer 4 formed on the surface of theamorphous silicon film 2 formed on theglass substrate 3 is removed, theglass substrate 3 is rinsed with pure water, and theglass substrate 3 is dried by horizontally spinning and rotating theglass substrate 3. - A
waiting unit 26 is attached to thecassette setting part 13 of thecassette station 11. Thewaiting unit 26 is a sublimation means as a waiting means for holding theglass substrate 3 spin cleaned in the spinclean unit 21 for a predetermined time and making theglass substrate 3 wait. That is, thewaiting unit 26 is a means for removing charges adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3. Thewaiting unit 26 is provided in thecassette setting part 13, and is provided as a part of thecassette station 11. Thewaiting unit 26 is constituted so that the plurality ofglass substrates 3 can be loaded. Furthermore, thewaiting unit 26 is provided parallel to thecassette 12 set in thecassette setting part 13, and is provided at one end side of thecassette setting part 13 of the side of thespin clean unit 21. - Specifically, the
waiting unit 26 makes theglass substrate 3 cleaned in the spinclean unit 21 wait and leaves theglass substrate 3 for a predetermined time, for example, for 5 minutes or more, and more preferably for 10 to 20 minutes. As shown inFIG. 4 , thewaiting unit 26 sublimates active fluoride (F+) 5 adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3. Herein, theactive fluoride 5 is the component of the hydrofluoric acid in the detergent, and is a substance for generating plus charges in thepolysilicon film 6 and charged in a positive charge when theactive fluoride 5 enters into thepolysilicon film 6 shown inFIG. 5 . Furthermore, thewaiting unit 26 evaporates and sublimates the molecules having the plus (+) charges adhered and left on the surface of theamorphous silicon film 2 of theglass substrate 3, that is, theactive fluoride 5. Referring to thewaiting unit 26, the number of theglass substrates 3 capable of being stored is set larger (the storage time of theglass substrate 3/the treatment time due to the laser annealing device 31) in view of the prevention in the reduction of the laser annealing treatment capability due to thelaser annealing device 31. In other words, referring to thewaiting unit 26, the number of storing steps of theglass substrate 3 is set to, for example, five pieces. - A
laser annealing device 31 which is a laser annealing means as a film controlling means is attached to one side part of thesubstrate conveyance part 14 of thecassette station 11. Thelaser annealing device 31 excimer laser anneals theamorphous silicon film 2 formed on theglass substrate 3 to reform theamorphous silicon film 2 into the polysilicon (p-Si) film. Thelaser annealing device 31 is an excimer laser annealing means, and is set around thecassette station 11. Specifically, as shown inFIG. 5 , thelaser annealing device 31 melts and recrystallizes theamorphous silicon film 2 at a speed of 6 mm/s by the irradiation of an excimer laser beam to reform theamorphous silicon film 2 into thepolysilicon film 6. Theglass substrate 3 in which theactive fluoride 5 adhered by the cleaning due to the spinclean unit 21 is sublimated by the waitingunit 26 is conveyed into thelaser annealing device 31. Thelaser annealing device 31 irradiates theamorphous silicon film 2 formed on theglass substrate 3 with the excimer laser beam and excimer laser anneals theamorphous silicon film 2 to crystallize theamorphous silicon film 2, thereby reforming theamorphous silicon film 2 into thepolysilicon film 6. - The
laser annealing device 31 is provided with anannealing chamber 32 in which theglass substrate 3 cleaned by the spinclean unit 21 is conveyed and stored by theconveyance robot 15. Theglass substrate 3 conveyed by theconveyance robot 15 is stored in theannealing chamber 32, and theannealing chamber 32 reforms theamorphous silicon film 2 formed on theglass substrate 3 into thepolysilicon film 6. Furthermore, thelaser annealing device 31 is provided with alaser oscillating device 33 as a laser oscillating means for oscillating the excimer laser beam. - Furthermore, a first
optical system 34 and a secondoptical system 35 are attached between thelaser oscillating device 33 and theannealing chamber 32. The firstoptical system 34 and the secondoptical system 35 process the excimer laser beam oscillated from thelaser oscillating device 33 optically, and irradiate the surface of theamorphous silicon film 2 formed on theglass substrate 3 stored and set in theannealing chamber 32 with the excimer laser beam optically processed. Herein, the firstoptical system 34 is attached between thelaser oscillating device 33 and the secondoptical system 35. Furthermore, the firstoptical system 34 is provided at a position into which the excimer laser beam oscillated from thelaser oscillating device 33 enters. - The second
optical system 35 is attached between the annealingchamber 32 and the firstoptical system 34. The secondoptical system 35 is provided at a position into which the excimer laser beam optically processed by the firstoptical system 34 enters. Furthermore, the secondoptical system 35 processes the excimer laser beam entered into the secondoptical system 35 optically, and irradiates theamorphous silicon film 2 formed on theglass substrate 3 in theannealing chamber 32 with the excimer laser beam optically processed. - Next, a liquid crystal display device provided with the
polysilicon film 6 excimer laser annealed by the above composite type excimerlaser annealing device 1 will be explained. - In
FIG. 2 , numeral 41 denotes a liquid crystal display element as the liquid crystal display device. The liquidcrystal display element 41 is a low-temperature polysilicon thin film transistor (TFT) liquid crystal display. The liquidcrystal display element 41 is provided with anarray substrate 42 having the shape of a generally rectangular flat plate. Thearray substrate 42 is provided with theglass substrate 3 being nearly transparent and having insulation. An insulatingundercoat layer 43 for preventing the diffusion of impurities from theglass substrate 3 is deposited on the surface of theglass substrate 3. The undercoat layer 43 has a silicon nitride film (SiNx) and a silicon oxide film (SiOx), and is deposited and formed by a plasma CVD method. - A
semiconductor layer 44 as an active layer and acapacity part 45 are provided like an island on theundercoat layer 43. Each of thesemiconductor layer 44 andcapacity part 45 is composed by thepolysilicon film 6. Herein, achannel region 46 is provided at the central part of thesemiconductor layer 44, and asource region 47 and adrain region 48 are respectively provided at both sides of thechannel region 46. - Furthermore, a
gate oxide film 51 as a gate insulating film such as the silicon oxide film having insulation is deposited on theunder coat layer 43 containing thesemiconductor layer 44 and thecapacity part 45. Agate electrode 52 is laminated and formed so as to face thechannel region 46 of thesemiconductor layer 44 on thegate oxide film 51. Thegate electrode 52 is made of a molybdenum-tungsten alloy (MoW) or the like. A p-typethin film transistor 53 as a switching element is formed by thegate electrode 52, thegate oxide film 51 and thesemiconductor layer 44. - A
capacity wiring part 54 is laminated and formed so as to face thecapacity part 45 on thegate oxide film 51. Thecapacity wiring part 54 is made of a molybdenum-tungsten alloy (MoW) or the like, and is formed by the same process as that of thegate electrode 52. Also, thecapacity wiring part 54 is made of the same material as that of thegate electrode 52. Anauxiliary capacity 55 is formed by thecapacity wiring part 54, thegate oxide film 51 and thecapacity part 45. - An interlayer insulating
film 56 formed by the silicon oxide film or the like is deposited on thegate oxide film 51 containing thegate electrode 52 and thecapacity wiring part 54. First contact holes 57, 58, and 59 are formed in theinterlayer insulating film 56 and thegate oxide film 51. The first contact holes 57, 58, and 59 pass through theinterlayer insulating film 56 and thegate oxide film 51 and a recommunicated with thesource region 47,drain region 48 andcapacity part 45 of thesemiconductor layer 44. Asource electrode 61 is laminated on theinterlayer insulating film 56 containing thefirst contact hole 57 penetrating to thesource region 47 of thesemiconductor layer 44. Therefore, thesource electrode 61 is electrically connected to thesource region 47 of thesemiconductor layer 44. - A
drain electrode 62 is laminated on theinterlayer insulating film 56 containing thefirst contact hole 58 penetrating to thedrain region 48 of thesemiconductor layer 44 and thefirst contact hole 59 penetrating to thecapacity part 45. Therefore, thedrain electrode 62 is electrically connected to thedrain region 48 of thesemiconductor layer 44, and is electrically connected to thecapacity part 45. Therefore, thedrain region 48 of thesemiconductor layer 44 is electrically connected to thecapacity part 45 by thedrain electrode 62. Herein, thesource electrode 61 and thedrain electrode 62 is made of low-resistance metal or the like such as aluminum (Al) or the like. - A
passivation film 63 as a protective film is laminated on theinterlayer insulating film 56 containing thesource electrode 61 and thedrain electrode 62. Acolor filter layer 64 sequentially colored to colors of more than at least the three primary colors of light, for example, three colors of red, blue and green is laminated and deposited on thepassivation film 63. Asecond contact hole 65 passing through thecolor filter layer 64 and thepassivation film 63 and penetrating to thedrain region 48 is formed in thecolor filter layer 64 and thepassivation film 63. - Furthermore, a
pixel electrode 66 is laminated and deposited on thecolor filter layer 64 containing thesecond contact hole 65. Thepixel electrode 66 is electrically connected to thedrain electrode 62 via thesecond contact hole 65. An orientedfilm 67 is laminated and deposited on thepixel electrode 66. - A
counter substrate 71 is arranged so as to face the orientedfilm 67. Thecounter substrate 71 is provided with aglass substrate 72 being nearly transparent and having insulation. Acounter electrode 73 is laminated and provided on a surface of theglass substrate 72 facing the orientedfilm 67. Aliquid crystal layer 74 composed by injecting and sealing a liquid crystal composition is formed as a light modulation layer between thecounter electrode 73 and the orientedfilm 67 of thearray substrate 42. - Next, the operation of the above composite type excimer laser annealing device will be explained.
- After the
undercoat layer 43 is first formed on one principal surface of theglass substrate 3 by the plasma CVD method or the like, theamorphous silicon film 2 is deposited on theundercoat layer 43. - Then, the
glass substrate 3 on which theamorphous silicon film 2 is deposited is stored in thecassette 12, and thecassette 12 in which theglass substrate 3 is stored is set in thecassette setting part 13 of thecassette station 11. - In this state, the
glass substrate 3 is taken out from thecassette 12 set in thecassette setting part 13 by theconveyance robot 15 in thesubstrate conveyance part 14 of thecassette station 11, and theglass substrate 3 is conveyed into the spinclean unit 21. - The
glass substrate 3 conveyed into the spinclean unit 21 is cleaned by the detergent obtained by mixing hydrofluoric acid (HF) with pure water (H2O) while theglass substrate 3 is horizontally rotated in the spinclean unit 21. At this time, as shown inFIG. 3 , thesurface oxide layer 4 formed on the surface of theamorphous silicon film 2 formed on theglass substrate 3, the foreign particles adhered to the surface of theamorphous silicon film 2 or the like are removed by the cleaning of theglass substrate 3 due to the spinclean unit 21. - Furthermore, after the
glass substrate 3 conveyed into the spinclean unit 21 is cleaned in the spinclean unit 21, theglass substrate 3 is rinsed by pure water and is dried. - Then, the
glass substrate 3 cleaned and dried by the spinclean unit 21 is taken out from the inside of the spinclean unit 21 by theconveyance robot 15, and is conveyed into the waitingunit 26 via thesubstrate conveyance part 14. Theglass substrate 3 is left and is made to wait in the waitingunit 26 for a predetermined time, for example, for 15 minutes. As shown inFIG. 4 , theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3 is sublimated. - Then, the
glass substrate 3 made to wait in the waitingunit 26 is taken out from the waiting unit by theconveyance robot 15. Theglass substrate 3 is then conveyed into theannealing chamber 32 of thelaser annealing device 31 via thesubstrate conveyance part 14, and is set in theannealing chamber 32. - In this state, the excimer laser beam is oscillated from the
laser oscillating device 33 of thelaser annealing device 31. The excimer laser beam is optically processed by the firstoptical system 34 and the secondoptical system 35, and theamorphous silicon film 2 formed on theglass substrate 3 in theannealing chamber 32 is irradiated with the excimer laser beam. As shown inFIG. 5 , theamorphous silicon film 2 is laser annealed, and thereby theamorphous silicon film 2 is crystallized to reform theamorphous silicon film 2 into thepolysilicon film 6. - Then, the
glass substrate 2 in which thepolysilicon film 6 is formed in theannealing chamber 32 is taken out from the inside of the annealing chamber by theconveyance robot 15, and theglass substrate 2 is conveyed into thepredetermined cassette 12 set in thecassette setting part 13 of thecassette station 11 via thesubstrate conveyance part 14. - Then, the
cassette 12 in which theglass substrate 3 is stored is taken out from thecassette setting part 13 of thecassette station 11. Thepolysilicon film 6 formed on theglass substrate 3 in thecassette 12 is patterned by photolithography and etching, and thegate oxide film 51 is then formed on theundercoat layer 43 containing thepolysilicon film 6 by the plasma CVD method or the like. - Furthermore, after the
gate electrode 52 and thecapacity wiring part 54 are formed on thegate oxide film 51 by sputtering and etching, thesource region 47 and thedrain region 48 are formed at both sides of thepolysilicon film 6 as thesemiconductor layer 44 by photolithography and etching to form thethin film transistor 53. At this time, thesource region 47 and thedrain region 48 are formed by using resist (not shown) at the time of etching processing thegate electrode 52 as a mask and by ion-doping impurities such as boron (B) and phosphorous (P). Thechannel region 46 is formed at the central part of thepolysilicon film 6 located below thegate electrode 52. - Then, after the
interlayer insulating film 56 is formed on thegate oxide film 51 containing thegate electrode 52 and thecapacity wiring part 54, thefirst contact hole layer insulating film 56 containing the first contact holes 57, 58, and 59, the low-resistance metal is patterned, and thesource electrode 61 and thedrain electrode 62 are formed. - After the
passivation film 63 is formed on theinterlayer insulating film 56 containing thesource electrode 61 and thedrain electrode 62, and thecolor filter layer 64 is then formed, thesecond contact hole 65 is formed. - After a transparent conductor layer such as ITO (Indium Tin Oxide) is deposited and on the
color filter layer 64 containing thesecond contact hole 65, and is etched to form thepixel electrode 66, the orientedfilm 67 is formed on thecolor filter layer 64 containing thepixel electrode 66. - After the
counter electrode 73 of thecounter substrate 71 is then bonded to the orientedfilm 67 so as to face the orientedfilm 67, the liquid crystal composition is injected and sealed between thecounter electrode 73 of thecounter substrate 71 and the orientedfilm 67 of thearray substrate 42. Thereby, theliquid crystal layer 74 is formed, and the liquidcrystal display element 41 is produced. - As described above, according to the above first embodiment, when the
glass substrate 3 cleaned by the spinclean unit 21 is immediately conveyed to theannealing chamber 32 of thelaser annealing device 31 as it is, and theamorphous silicon film 2 formed on theglass substrate 3 is laser annealed to reform theamorphous silicon film 2 into thepolysilicon film 6, theamorphous silicon film 2 is laser annealed with theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 and left. Therefore, the charges are left in thepolysilicon film 6 even after the laser anneal. - As a result, as shown in
FIG. 6 , a gate source voltage (Vgs) to a drain current (Id) when the drain source voltage (Vds) of thethin film transistor 53 formed from thepolysilicon film 6 is sequentially changed at stages such as 0.05 V, 5.05 V, 10.05 V is shifted to the plus (+) side. Therefore, since the threshold voltage (Vth) of thethin film transistor 53 is changed, the desired TFT characteristics cannot be obtained, and thethin film transistor 53 having no normal TFT characteristics is formed. - Then, after the surface of the
amorphous silicon film 2 formed on theglass substrate 3 by the spinclean unit 21 is cleaned by the hydrofluoric acid aqueous solution, theglass substrate 3 is conveyed to the waitingunit 26 by theconveyance robot 15, and is made to wait for about 15 minutes. Theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3 is sublimated, and the charges left on theamorphous silicon film 2 are removed. - As a result, the
glass substrate 3 in which theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 by making theglass substrate 3 wait in the waitingunit 26 is sublimated is conveyed to theannealing chamber 32 of thelaser annealing device 31 by theconveyance robot 15. Theamorphous silicon film 2 formed on theglass substrate 3 is excimer laser annealed in theannealing chamber 32 to reform theamorphous silicon film 2 into thepolysilicon film 6. Therefore, the residuals of the charges in thepolysilicon film 6 generated by laser annealing theamorphous silicon film 2 formed on theglass substrate 3 with theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 can be prevented. - That is, the
amorphous silicon film 2 can be laser annealed with theactive fluoride 5 not being adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3 to reform theamorphous silicon film 2 into thepolysilicon film 6. Therefore, as shown inFIG. 9 , since the charges or theactive fluoride 6 do not leave residuals in thepolysilicon film 6 and the grain boundary, as shown inFIG. 6 , thethin film transistor 53 formed by thepolysilicon film 6 may have the desired threshold characteristics (Vth). Therefore, since thethin film transistor 53 having the desired TFT characteristics can be obtained, the generation of problems such as the defective image output and increase in power consumption of the liquidcrystal display element 41 provided with thethin film transistor 53 can be prevented. - As shown in
FIG. 7 , the threshold characteristics of thethin film transistor 53 formed by theamorphous silicon film 2 formed on theglass substrate 3 made to wait in the waitingunit 26 are stabilized by setting the waiting time of theglass substrate 3 in the waitingunit 26 to 5 minutes or more. Furthermore, the threshold characteristics of thethin film transistor 53 formed on theglass substrate 3 can be further stabilized by setting the waiting time of theglass substrate 3 in the waitingunit 26 to 10 minutes or more. - Herein, the threshold characteristics of the
thin film transistor 53 formed from theamorphous silicon film 2 formed on theglass substrate 3 can be further stabilized by making theglass substrate 3 wait for a longer period of time using the waitingunit 26. However, when the waiting time in the waitingunit 26 of theglass substrate 3 is made longer than 20 minutes, it takes too much time to manufacture the liquidcrystal display element 41. The stability of the threshold characteristics of thethin film transistor 53 to the waiting time of theglass substrate 3 is hardly changed. Thereby, it is preferable that the waiting time in the waitingunit 26 of theglass substrate 3 is set to 10 minutes to 20 minutes. - The waiting
unit 26 is stored and attached in thecassette setting part 13 of thecassette station 11 in the above first embodiment. However, the waitingunit 26 can also be attached to the other end side of thesubstrate conveyance part 14 of thecassette station 11 as shown in the second embodiment shown inFIG. 8 . The waitingunit 26 is attached to the other end side of thesubstrate conveyance part 14 of the opposite side to the side to which the spinclean unit 21 is attached. Theglass substrate 3 spin cleaned by the spinclean unit 21 is conveyed into the waitingunit 26 from the inside of the spinclean unit 21 by theconveyance robot 15. The waitingunit 15 is attached to a position adjacent to theannealing chamber 32 of thelaser annealing device 31. Theglass substrate 3 made to wait in the waitingunit 15 is conveyed into theannealing chamber 32 via theconveyance robot 15. - As a result, since the
glass substrate 3 in which theamorphous silicon film 2 is cleaned by the spinclean unit 21 is conveyed to theannealing chamber 32 of thelaser annealing device 31 after theglass substrate 3 is made to wait in the waitingunit 26, and is laser annealed, the same operation effect as that of the above first embodiment can be exhibited. Since the waitingunit 26 can be easily attached to the existing composite type excimerlaser annealing device 1 by attaching the waitingunit 26 to the other end part of thesubstrate conveyance part 14 of thecassette station 11, the versatility of the waitingunit 26 can be improved. - Except for a leaving
type waiting unit 26 for leaving and making theglass substrate 3 to be conveyed wait, a dryingtype waiting unit 26 for ventilating, spraying and drying hot nitrogen gas and air to theamorphous silicon film 2 formed on theglass substrate 3, and a heatedtype waiting unit 26 for heating theamorphous silicon film 2 formed on theglass substrate 3 by an infrared lamp and a hot plate or the like can also be made to correspond and used. - Furthermore, a fluoride collecting means for collecting the fluoride sublimated in the waiting
unit 26 can also be attached to the waitingunit 26. When theglass substrate 3 is made to wait by the waitingunit 26, in addition to theactive fluoride 5 adhered to the surface of theamorphous silicon film 2 formed on theglass substrate 3, various substances having the plus charges adhered to the surface of theamorphous silicon film 2 can also be sublimated. - The waiting
unit 26 is attached in thecassette setting part 13 of thecassette station 11 or to the other end side of thesubstrate conveyance part 14 of thecassette station 11. However, the waitingunit 26 may be attached to any position where theglass substrate 3 cleaned by the spinclean unit 21 can be conveyed into theannealing chamber 32 of thelaser annealing device 31 after theglass substrate 3 is made to wait. Theamorphous silicon film 2 formed on theglass substrate 3 is irradiated with the excimer laser beam by thelaser annealing device 31. However, a YAG (Yttrium-Aluminum-Garnet) Laser is oscillated from thelaser oscillating device 33 of thelaser annealing device 31, and theamorphous silicon film 2 formed on theglass substrate 3 may be laser annealed by the YAG laser. - Although the configuration for conveying the
glass substrate 3 made to wait by the waitingunit 26 to thelaser annealing device 31 to laser anneal theglass substrate 3 is explained, even when theglass substrate 3 made to wait by the waitingunit 26 is conveyed to film control devices such as a plasma CVD (Chemical Vapor Deposition) device, a PVD (Physical Vapor Deposition) device and a sputtering device for depositing various thin films on theamorphous silicon film 2 of theglass substrate 3 to control the various thin films, the film control devices can be made to correspond and used. - Although the
thin film transistor 53 using thepolysilicon film 6 is explained, the switching elements such as the other Thin Film Diode (TFD) using thepolysilicon film 6 can be made to correspond and used.
Claims (19)
1. A film control method comprising:
a clean step of cleaning a surface of a silicon film provided on a substrate using a fluorine compound;
a sublimation step of sublimating fluoride contained in the fluorine compound adhered to the surface of the silicon film provided on the substrate cleaned by the clean step; and
a film control step of controlling the silicon film of the substrate in which the fluoride is sublimated in the sublimation step.
2. The film control method according to claim 1 , wherein the clean step uses a hydrofluoric acid aqueous solution as the fluorine compound.
3. The film control method according to claim 1 , wherein the silicon film is an amorphous silicon film, and the film control step is a laser annealing step of laser annealing the amorphous silicon film of the substrate to reform the amorphous silicon film into a polysilicon film.
4. The film control method according to claim 3 , wherein the laser annealing step is an excimer laser annealing step of irradiating the amorphous silicon film of the substrate with an excimer laser to reform the amorphous silicon film into the polysilicon film.
5. The film control method according to claim 1 , wherein the sublimation step is a step of sublimating a molecule having a plus charge on the surface of the silicon film of the substrate.
6. The film control method according to claim 5 , wherein the sublimation step is a step of holding the substrate for at least 5 minutes or more to sublimate the molecule having the plus charge on the surface of the silicon film of the substrate.
7. The film control method according to claim 1 , wherein the sublimation step is a step of sublimating active fluoride as a molecule having a plus charge on the surface of the silicon film of the substrate.
8. The film control method according to claim 1 , wherein the sublimation step removes a charge adhered to the surface of the silicon film.
9. A film control device comprising:
a clean means for cleaning a silicon film provided on a substrate using a fluorine compound;
a sublimation means for a sublimating fluoride contained in the fluorine compound adhered to the silicon film of the substrate cleaned by the clean means; and
a film control means for controlling the silicon film of the substrate in which the fluoride is sublimated by the sublimation means.
10. The film control device according to claim 9 , wherein the clean means uses a hydrofluoric acid aqueous solution as the fluorine compound.
11. The film control device according to claim 9 , wherein the silicon film is an amorphous silicon film, and
the film control means is a laser annealing means for laser annealing the amorphous silicon film of the substrate to reform the amorphous silicon film into a polysilicon film.
12. The film control device according to claim 11 , wherein the laser annealing means is a means for irradiating the amorphous silicon film of the substrate with an excimer laser to reform the amorphous silicon film into the polysilicon film.
13. The film control device according to claim 9 , wherein the sublimation means is a means for sublimating a molecule having a plus charge on the surface of the silicon film of the substrate.
14. The film control device according to claim 13 , wherein the sublimation means is a means for holding the substrate for at least 5 minutes or more to sublimate the molecule having the plus charge on the surface of the silicon film of the substrate.
15. The film control device according to claim 9 , wherein the sublimation means is a means for sublimating active fluoride as the molecule having the plus charge on the surface of the silicon film of the substrate.
16. The film control device according to claim 9 , wherein the sublimation means removes a charge adhered to the surface of the silicon film.
17. The film control device according to claim 9 , wherein the clean means is a spin clean unit for cleaning the substrate while rotating the substrate.
18. The film control device according to claim 9 , wherein the sublimation means is a waiting unit for making the substrate wait.
19. The film control device according to claim 9 , wherein the film control means is a laser annealing device.
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JP2005126513 | 2005-04-25 | ||
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US11/279,977 Abandoned US20060240647A1 (en) | 2005-04-25 | 2006-04-17 | Film control method and device thereof |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103681244A (en) * | 2013-12-25 | 2014-03-26 | 深圳市华星光电技术有限公司 | Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system |
US20170263468A1 (en) * | 2015-10-30 | 2017-09-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method for reducing the surface roughness of a low temperaturepoly-silicon and a low temperaturepoly-silicon thereof |
US20180354079A1 (en) * | 2017-06-08 | 2018-12-13 | Trumpf Laser Gmbh | Protective glass with transponder and installation aid and associated laser tool |
US11183515B2 (en) | 2019-03-19 | 2021-11-23 | Samsung Display Co., Ltd. | Display device including polycrystalline silicon layer, method of manufacturing polycrystalline silicon layer, and method of manufacturing display device |
US11329117B2 (en) * | 2019-07-12 | 2022-05-10 | Samsung Display Co., Ltd. | Thin film transistor, display apparatus including the same, and manufacturing methods thereof |
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2006
- 2006-04-17 US US11/279,977 patent/US20060240647A1/en not_active Abandoned
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Publication number | Priority date | Publication date | Assignee | Title |
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CN103681244A (en) * | 2013-12-25 | 2014-03-26 | 深圳市华星光电技术有限公司 | Low-temperature polycrystalline silicon film pre-cleaning method, low-temperature polycrystalline silicon film preparation method and low-temperature polycrystalline silicon film manufacturing system |
WO2015096113A1 (en) * | 2013-12-25 | 2015-07-02 | 深圳市华星光电技术有限公司 | Low temperature polycrystalline silicon thin film precleaning method and preparation method, and system for making low temperature polycrystalline silicon thin film |
GB2535369A (en) * | 2013-12-25 | 2016-08-17 | Shenzhen China Star Optoelect | Low temperature polycrystalline silicon thin film precleaning method and preparation method, and system for making low temperature polycrystalline silicon |
RU2647561C2 (en) * | 2013-12-25 | 2018-03-16 | Шэньчжэнь Чайна Стар Оптоэлектроникс Текнолоджи Ко., Лтд. | Low temperature polycrystalline silicon thin film pre-cleaning method and preparation method, liquid crystal display device and system for making same |
GB2535369B (en) * | 2013-12-25 | 2018-12-05 | Shenzhen China Star Optoelect | Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof |
US20170263468A1 (en) * | 2015-10-30 | 2017-09-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method for reducing the surface roughness of a low temperaturepoly-silicon and a low temperaturepoly-silicon thereof |
US9899233B2 (en) * | 2015-10-30 | 2018-02-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Manufacturing method for reducing the surface roughness of a low temperaturepoly-silicon and a low temperaturepoly-silicon thereof |
US20180354079A1 (en) * | 2017-06-08 | 2018-12-13 | Trumpf Laser Gmbh | Protective glass with transponder and installation aid and associated laser tool |
US11247299B2 (en) * | 2017-06-08 | 2022-02-15 | Trumpf Laser Gmbh | Protective glass with transponder and installation aid and associated laser tool |
US11183515B2 (en) | 2019-03-19 | 2021-11-23 | Samsung Display Co., Ltd. | Display device including polycrystalline silicon layer, method of manufacturing polycrystalline silicon layer, and method of manufacturing display device |
US11942481B2 (en) | 2019-03-19 | 2024-03-26 | Samsung Display Co., Ltd. | Display device including polycrystalline silicon layer, method of manufacturing polycrystalline silicon layer, and method of manufacturing display device |
US11329117B2 (en) * | 2019-07-12 | 2022-05-10 | Samsung Display Co., Ltd. | Thin film transistor, display apparatus including the same, and manufacturing methods thereof |
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