KR100371991B1 - 단일진공챔버내에서반도체기판을회전정렬시키고탈가스화하기위한장치및방법 - Google Patents

단일진공챔버내에서반도체기판을회전정렬시키고탈가스화하기위한장치및방법 Download PDF

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Publication number
KR100371991B1
KR100371991B1 KR1019960002804A KR19960002804A KR100371991B1 KR 100371991 B1 KR100371991 B1 KR 100371991B1 KR 1019960002804 A KR1019960002804 A KR 1019960002804A KR 19960002804 A KR19960002804 A KR 19960002804A KR 100371991 B1 KR100371991 B1 KR 100371991B1
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KR
South Korea
Prior art keywords
substrate
vacuum chamber
wafer
rotating
electrostatic
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960002804A
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English (en)
Korean (ko)
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KR960032593A (ko
Inventor
이. 다벤포트 로버트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR960032593A publication Critical patent/KR960032593A/ko
Application granted granted Critical
Publication of KR100371991B1 publication Critical patent/KR100371991B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019960002804A 1995-02-03 1996-02-03 단일진공챔버내에서반도체기판을회전정렬시키고탈가스화하기위한장치및방법 Expired - Fee Related KR100371991B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/383,112 1995-02-03
US08/383112 1995-02-03
US08/383,112 US5982986A (en) 1995-02-03 1995-02-03 Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber

Publications (2)

Publication Number Publication Date
KR960032593A KR960032593A (ko) 1996-09-17
KR100371991B1 true KR100371991B1 (ko) 2003-03-28

Family

ID=23511774

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960002804A Expired - Fee Related KR100371991B1 (ko) 1995-02-03 1996-02-03 단일진공챔버내에서반도체기판을회전정렬시키고탈가스화하기위한장치및방법

Country Status (4)

Country Link
US (2) US5982986A (enExample)
EP (1) EP0725427A2 (enExample)
JP (1) JPH08264452A (enExample)
KR (1) KR100371991B1 (enExample)

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KR20070037517A (ko) 2000-09-15 2007-04-04 어플라이드 머티어리얼스, 인코포레이티드 처리 장비용 더블 이중 슬롯 로드록
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JP3870824B2 (ja) * 2001-09-11 2007-01-24 住友電気工業株式会社 被処理物保持体、半導体製造装置用サセプタおよび処理装置
US6619304B2 (en) * 2001-09-13 2003-09-16 Micell Technologies, Inc. Pressure chamber assembly including non-mechanical drive means
US7316966B2 (en) 2001-09-21 2008-01-08 Applied Materials, Inc. Method for transferring substrates in a load lock chamber
JP4570954B2 (ja) * 2002-06-21 2010-10-27 アプライド マテリアルズ インコーポレイテッド 基板検出の為の角度付きセンサ
US7207766B2 (en) 2003-10-20 2007-04-24 Applied Materials, Inc. Load lock chamber for large area substrate processing system
US7453160B2 (en) * 2004-04-23 2008-11-18 Axcelis Technologies, Inc. Simplified wafer alignment
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US20060144337A1 (en) * 2005-01-06 2006-07-06 Hsien-Che Teng Heater for heating a wafer and method for preventing contamination of the heater
JP4768699B2 (ja) 2006-11-30 2011-09-07 キヤノンアネルバ株式会社 電力導入装置及び成膜方法
JP5283370B2 (ja) * 2007-11-29 2013-09-04 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
KR20100108364A (ko) * 2007-12-20 2010-10-06 어플라이드 머티어리얼스, 인코포레이티드 이송 모듈 상의 하나의 단일한 면을 사용하는 엇갈린 이중 처리 챔버
US8314371B2 (en) 2008-11-06 2012-11-20 Applied Materials, Inc. Rapid thermal processing chamber with micro-positioning system
JP5504980B2 (ja) * 2010-03-04 2014-05-28 日新イオン機器株式会社 ウエハリフト回転機構、ステージ装置及びイオン注入装置
KR102139682B1 (ko) * 2013-08-05 2020-07-30 어플라이드 머티어리얼스, 인코포레이티드 얇은 기판 취급을 위한 정전 캐리어
WO2015031023A1 (en) * 2013-08-30 2015-03-05 Applied Materials, Inc. Substrate support system
US10145013B2 (en) 2014-01-27 2018-12-04 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems
DE112016000914T5 (de) 2015-02-25 2017-11-02 Corning Incorporated Vorrichtung und Verfahren zum elektrostatischen Halten von Substraten an einem sich bewegenden Träger
US10443934B2 (en) * 2015-05-08 2019-10-15 Varian Semiconductor Equipment Associates, Inc. Substrate handling and heating system
US20180033673A1 (en) * 2016-07-26 2018-02-01 Applied Materials, Inc. Substrate support with in situ wafer rotation
US10041789B2 (en) 2016-09-30 2018-08-07 Axcelis Technologies, Inc. Integrated emissivity sensor alignment characterization
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US9960068B1 (en) 2016-12-02 2018-05-01 Lam Research Corporation Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing
US9892956B1 (en) 2016-10-12 2018-02-13 Lam Research Corporation Wafer positioning pedestal for semiconductor processing
KR102643141B1 (ko) * 2016-11-03 2024-03-04 삼성디스플레이 주식회사 정전 척 및 정전 흡착 장치
JP6985399B2 (ja) 2017-03-09 2021-12-22 エーファウ・グループ・エー・タルナー・ゲーエムベーハー 静電式基板保持ユニット
EP3698398A1 (en) * 2017-10-19 2020-08-26 Evatec AG Method and apparatus for treating a substrate
US20210252486A1 (en) * 2018-06-22 2021-08-19 The Curators Of The University Of Missouri Novel method of manufacture of metal nanoparticles and metal single-atom materials on various substrates and novel compositions
US20230343615A1 (en) * 2022-04-22 2023-10-26 Applied Materials, Inc. In-situ low temperature measurement of low emissivity substrates

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Also Published As

Publication number Publication date
US5982986A (en) 1999-11-09
JPH08264452A (ja) 1996-10-11
KR960032593A (ko) 1996-09-17
EP0725427A2 (en) 1996-08-07
EP0725427A3 (enExample) 1996-09-04
US6222991B1 (en) 2001-04-24

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