KR100340258B1 - 위치검출장치 및 노광장치 - Google Patents

위치검출장치 및 노광장치 Download PDF

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Publication number
KR100340258B1
KR100340258B1 KR1019990026792A KR19990026792A KR100340258B1 KR 100340258 B1 KR100340258 B1 KR 100340258B1 KR 1019990026792 A KR1019990026792 A KR 1019990026792A KR 19990026792 A KR19990026792 A KR 19990026792A KR 100340258 B1 KR100340258 B1 KR 100340258B1
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KR
South Korea
Prior art keywords
stage
mark
measuring
exposure apparatus
deviation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990026792A
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English (en)
Korean (ko)
Other versions
KR20000011471A (ko
Inventor
카타야마쇼시
Original Assignee
미다라이 후지오
캐논 가부시끼가이샤
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Publication of KR20000011471A publication Critical patent/KR20000011471A/ko
Application granted granted Critical
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7096—Arrangement, mounting, housing, environment, cleaning or maintenance of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1019990026792A 1998-07-03 1999-07-03 위치검출장치 및 노광장치 Expired - Fee Related KR100340258B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20449698A JP3548428B2 (ja) 1998-07-03 1998-07-03 位置計測装置及びそれを用いたデバイスの製造方法
JP1998-204496 1998-07-03

Publications (2)

Publication Number Publication Date
KR20000011471A KR20000011471A (ko) 2000-02-25
KR100340258B1 true KR100340258B1 (ko) 2002-06-12

Family

ID=16491502

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990026792A Expired - Fee Related KR100340258B1 (ko) 1998-07-03 1999-07-03 위치검출장치 및 노광장치

Country Status (4)

Country Link
US (1) US7170603B2 (enExample)
EP (1) EP0969328A3 (enExample)
JP (1) JP3548428B2 (enExample)
KR (1) KR100340258B1 (enExample)

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TW588346B (en) * 2000-12-22 2004-05-21 Koninkl Philips Electronics Nv Multilayer record carrier and method of manufacturing thereof and recording thereon
US20050259709A1 (en) * 2002-05-07 2005-11-24 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7119351B2 (en) * 2002-05-17 2006-10-10 Gsi Group Corporation Method and system for machine vision-based feature detection and mark verification in a workpiece or wafer marking system
US7030984B2 (en) * 2002-05-23 2006-04-18 Therma-Wave, Inc. Fast wafer positioning method for optical metrology
US7277188B2 (en) 2003-04-29 2007-10-02 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
JP4551071B2 (ja) * 2003-09-19 2010-09-22 オリンパス株式会社 顕微鏡用電動ステージ制御システム、該制御装置、及び該制御方法
JP4376100B2 (ja) * 2004-03-18 2009-12-02 信越化学工業株式会社 光ファイバ母材の延伸方法
JP4351955B2 (ja) * 2004-06-03 2009-10-28 日立ビアメカニクス株式会社 基準点の位置決定方法
US7308368B2 (en) 2004-09-15 2007-12-11 Asml Netherlands B.V. Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program
JP3919782B2 (ja) 2004-10-08 2007-05-30 キヤノン株式会社 露光装置及びデバイス製造方法
TWI295380B (en) 2005-05-26 2008-04-01 Cymer Inc Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
US7898653B2 (en) * 2006-12-20 2011-03-01 Hitachi High-Technologies Corporation Foreign matter inspection apparatus
US8156985B2 (en) * 2008-03-07 2012-04-17 Matthew David Moore Method and means for assembly of high precision ultra-high speed crystal scanning heads
JP2009300798A (ja) * 2008-06-13 2009-12-24 Canon Inc 露光装置およびデバイス製造方法
JP5371349B2 (ja) * 2008-09-19 2013-12-18 キヤノン株式会社 インプリント装置、および物品の製造方法
JP2010080631A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法
JP2010103476A (ja) 2008-09-25 2010-05-06 Canon Inc 位置合わせ装置及び露光装置
JP2010080630A (ja) * 2008-09-25 2010-04-08 Canon Inc 押印装置および物品の製造方法
JP5264406B2 (ja) * 2008-10-22 2013-08-14 キヤノン株式会社 露光装置、露光方法およびデバイスの製造方法
JP2011108795A (ja) * 2009-11-17 2011-06-02 Canon Inc 露光装置及びデバイス製造方法
US20110132885A1 (en) * 2009-12-07 2011-06-09 J.P. Sercel Associates, Inc. Laser machining and scribing systems and methods
US20130256286A1 (en) * 2009-12-07 2013-10-03 Ipg Microsystems Llc Laser processing using an astigmatic elongated beam spot and using ultrashort pulses and/or longer wavelengths
JP5832345B2 (ja) * 2012-03-22 2015-12-16 株式会社ニューフレアテクノロジー 検査装置および検査方法
JP6329435B2 (ja) 2014-05-27 2018-05-23 キヤノン株式会社 計測装置、リソグラフィ装置、物品の製造方法、及び計測方法
CN106483778B (zh) * 2015-08-31 2018-03-30 上海微电子装备（集团）股份有限公司 基于相对位置测量的对准系统、双工件台系统及测量系统
NL2017555A (en) 2015-10-12 2017-04-24 Asml Holding Nv An apparatus with a sensor and a method of performing target measurement
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
CN107883884B (zh) * 2016-09-30 2019-10-25 上海微电子装备（集团）股份有限公司 一种光学测量装置和方法
CN106527305A (zh) * 2017-01-11 2017-03-22 广东工业大学 一种多轴伺服运动控制器和运动控制系统
JP6876470B2 (ja) * 2017-03-07 2021-05-26 東京エレクトロン株式会社 ワーク加工装置、ワーク加工方法、プログラム及びコンピュータ記憶媒体

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US4629313A (en) * 1982-10-22 1986-12-16 Nippon Kogaku K.K. Exposure apparatus
JPS5994419A (ja) * 1982-11-19 1984-05-31 Canon Inc 分割焼付け装置におけるアライメント方法
US4780616A (en) * 1986-09-25 1988-10-25 Nippon Kogaku K. K. Projection optical apparatus for mask to substrate alignment
JP3109852B2 (ja) * 1991-04-16 2000-11-20 キヤノン株式会社 投影露光装置
US5243195A (en) * 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
JPH06168867A (ja) * 1992-11-30 1994-06-14 Nikon Corp 露光方法及び露光装置
US5978071A (en) * 1993-01-07 1999-11-02 Nikon Corporation Projection exposure apparatus and method in which mask stage is moved to provide alignment with a moving wafer stage
JP3412704B2 (ja) * 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
US5798195A (en) * 1993-09-24 1998-08-25 Nikon Corporation Stepping accuracy measuring method
JP3315540B2 (ja) * 1994-10-28 2002-08-19 キヤノン株式会社 位置計測装置、位置合わせ装置、露光装置およびデバイスの製造方法
JP3448991B2 (ja) * 1994-11-29 2003-09-22 株式会社ニコン ステージ移動制御装置、投影型露光装置およびステージ駆動方法ならびに露光方法。
US5760878A (en) * 1995-08-30 1998-06-02 Canon Kabushiki Kaisha Exposure apparatus and alignment discrimination method
US6384898B1 (en) * 1997-02-06 2002-05-07 Nikon Corporation Projection exposure apparatus

Also Published As

Publication number Publication date
KR20000011471A (ko) 2000-02-25
EP0969328A2 (en) 2000-01-05
US20030142313A1 (en) 2003-07-31
US7170603B2 (en) 2007-01-30
JP3548428B2 (ja) 2004-07-28
EP0969328A3 (en) 2002-05-08
JP2000021766A (ja) 2000-01-21

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