KR100335591B1 - 집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스 - Google Patents

집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스 Download PDF

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Publication number
KR100335591B1
KR100335591B1 KR1019930018082A KR930018082A KR100335591B1 KR 100335591 B1 KR100335591 B1 KR 100335591B1 KR 1019930018082 A KR1019930018082 A KR 1019930018082A KR 930018082 A KR930018082 A KR 930018082A KR 100335591 B1 KR100335591 B1 KR 100335591B1
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KR
South Korea
Prior art keywords
bonding
polyimide layer
wire
active circuit
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930018082A
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English (en)
Korean (ko)
Other versions
KR940008033A (ko
Inventor
캐더린지.하이넨
로저제이.스티어맨
라파엘시.알파로
Original Assignee
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 텍사스 인스트루먼츠 인코포레이티드 filed Critical 텍사스 인스트루먼츠 인코포레이티드
Publication of KR940008033A publication Critical patent/KR940008033A/ko
Application granted granted Critical
Publication of KR100335591B1 publication Critical patent/KR100335591B1/ko
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Expired - Lifetime legal-status Critical Current

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Classifications

    • H10W72/071—
    • H10W72/019—
    • H10W70/60—
    • H10W72/0711—
    • H10W72/07533—
    • H10W72/07541—
    • H10W72/536—
    • H10W72/552—
    • H10W72/5522—
    • H10W72/59—
    • H10W72/9232—
    • H10W72/952—
    • H10W74/00—

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019930018082A 1992-09-10 1993-09-09 집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스 Expired - Lifetime KR100335591B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US94308792A 1992-09-10 1992-09-10
US07/943,087 1992-09-10

Publications (2)

Publication Number Publication Date
KR940008033A KR940008033A (ko) 1994-04-28
KR100335591B1 true KR100335591B1 (ko) 2002-08-24

Family

ID=25479083

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930018082A Expired - Lifetime KR100335591B1 (ko) 1992-09-10 1993-09-09 집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스

Country Status (7)

Country Link
EP (1) EP0587442B1 (cg-RX-API-DMAC10.html)
JP (1) JPH06204277A (cg-RX-API-DMAC10.html)
KR (1) KR100335591B1 (cg-RX-API-DMAC10.html)
DE (1) DE69323515T2 (cg-RX-API-DMAC10.html)
MY (1) MY110904A (cg-RX-API-DMAC10.html)
SG (1) SG47534A1 (cg-RX-API-DMAC10.html)
TW (1) TW253987B (cg-RX-API-DMAC10.html)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3420435B2 (ja) 1996-07-09 2003-06-23 松下電器産業株式会社 基板の製造方法、半導体装置及び半導体装置の製造方法
TW445616B (en) 1998-12-04 2001-07-11 Koninkl Philips Electronics Nv An integrated circuit device
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6503820B1 (en) * 1999-10-04 2003-01-07 Koninklijke Philips Electronics N.V. Die pad crack absorption system and method for integrated circuit chip fabrication
DE10200932A1 (de) * 2002-01-12 2003-07-24 Philips Intellectual Property Diskretes Halbleiterbauelement
DE10242325A1 (de) * 2002-09-12 2004-04-01 eupec Europäische Gesellschaft für Leistungshalbleiter mbH Halbleiter mit Isolierschicht und Verfahren zu dessen Herstellung
DE10245867A1 (de) * 2002-09-30 2004-04-15 Siced Electronics Development Gmbh & Co. Kg Leistungs-Halbleiterbauelement mit verbesserten Anschlusskontakten und Verfahren zu dessen Herstellung
CN100589244C (zh) 2004-03-16 2010-02-10 松下电器产业株式会社 半导体器件
JP4696532B2 (ja) 2004-05-20 2011-06-08 株式会社デンソー パワー複合集積型半導体装置およびその製造方法
JP4674522B2 (ja) 2004-11-11 2011-04-20 株式会社デンソー 半導体装置
DE102006003930A1 (de) * 2006-01-26 2007-08-09 Infineon Technologies Austria Ag Leistungshalbleiterelement mit internen Bonddrahtverbindungen zu einem Bauelementsubstrat und Verfahren zur Herstellung desselben
JP5732035B2 (ja) * 2009-03-20 2015-06-10 ミクロガン ゲーエムベーハー 垂直接触電子部品及びその製造方法
JP2015204393A (ja) * 2014-04-15 2015-11-16 サンケン電気株式会社 半導体装置
JP6690509B2 (ja) * 2016-11-22 2020-04-28 株式会社村田製作所 半導体装置
US10663175B2 (en) 2017-05-30 2020-05-26 Samsung Electronics Co., Ltd. Home appliance

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51118965A (en) * 1976-02-23 1976-10-19 Hitachi Ltd Insulation film of semiconductor device
US4723197A (en) * 1985-12-16 1988-02-02 National Semiconductor Corporation Bonding pad interconnection structure
JPH01103867A (ja) * 1987-10-16 1989-04-20 Sanyo Electric Co Ltd トランジスタ
JP2559602B2 (ja) * 1987-11-30 1996-12-04 超音波工業株式会社 ワイヤボンダ用超音波振動子
JP2593965B2 (ja) * 1991-01-29 1997-03-26 三菱電機株式会社 半導体装置
US5201454A (en) * 1991-09-30 1993-04-13 Texas Instruments Incorporated Process for enhanced intermetallic growth in IC interconnections

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same

Also Published As

Publication number Publication date
EP0587442A3 (cg-RX-API-DMAC10.html) 1994-08-03
MY110904A (en) 1999-06-30
JPH06204277A (ja) 1994-07-22
TW253987B (cg-RX-API-DMAC10.html) 1995-08-11
EP0587442A2 (en) 1994-03-16
DE69323515D1 (de) 1999-03-25
DE69323515T2 (de) 1999-06-17
KR940008033A (ko) 1994-04-28
SG47534A1 (en) 1998-04-17
EP0587442B1 (en) 1999-02-17

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