JP5732035B2 - 垂直接触電子部品及びその製造方法 - Google Patents
垂直接触電子部品及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000010410 layer Substances 0.000 claims description 170
- 229910000679 solder Inorganic materials 0.000 claims description 48
- 230000006641 stabilisation Effects 0.000 claims description 39
- 238000011105 stabilization Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 31
- 239000011241 protective layer Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 14
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 13
- 230000000087 stabilizing effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 238000009616 inductively coupled plasma Methods 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- 238000005119 centrifugation Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims 2
- 230000008569 process Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- -1 pressure Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000005226 mechanical processes and functions Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- CFAKWWQIUFSQFU-UHFFFAOYSA-N 2-hydroxy-3-methylcyclopent-2-en-1-one Chemical compound CC1=C(O)C(=O)CC1 CFAKWWQIUFSQFU-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Description
Claims (16)
- 電子部品であって、
基板平面に位置する第一の接触表面と少なくとも一つの第二の接触表面と、
前記第一及び第二の接触表面の上方に配置される少なくとも一つの絶縁層と、
前記部品の機械的安定性を高めるために、前記絶縁層に接して配置される少なくとも一つの安定化層と、
少なくとも一つのボンディング及び/または半田接点と、
を有し、
前記絶縁層及び前記安定化層が、前記第一の接触表面とは離れた位置にある前記安定化層の上側に開口するとともに、前記安定化層及び前記絶縁層を通じて前記第一の接触表面まで達する、少なくとも一つの開口を有し、前記ボンディング及び/または半田接点が、前記安定化層及び前記第二の接触表面の上に広がるとともに、前記開口を通じて前記第一の接触表面に接し、
少なくとも一つの保護層が、前記絶縁層と前記第一及び第二の接触表面との間に配置され、前記開口が該保護層を通じて延び、
前記開口の断面積が、前記安定化層の前記上側から前記第一の接触表面に向かう方向において減少し、
前記絶縁層が、前記第一の接触表面上にある前記保護層の端部を覆い、
少なくとも一つの前記絶縁層が、数マイクロメートルの厚みを有するポリマー材料であり、少なくとも一つの前記ボンディング及び/または半田接点を前記第二の接触表面から絶縁し、少なくとも一つの前記安定化層が、前記絶縁層上に広がり、前記絶縁層の硬度よりも高い硬度を有する材料を含む、
電子部品。 - 前記ボンディング及び/または半田接点が、前記開口を完全に塞ぎ、または、前記開口の内部壁の少なくとも一部及び前記第一の接触表面の少なくとも一部に接する層として構成されること、
を特徴とする請求項1に記載の電子部品。 - 前記保護層が、SiO2を含むこと、
を特徴とする請求項1または2に記載の電子部品。 - 前記ポリマー材料が、ベンゾシクロブテンを含むこと、
を特徴とする請求項1から3のいずれか1項に記載の電子部品。 - 前記安定化層が、SiO2を含むこと、
を特徴とする請求項1から4のいずれか1項に記載の電子部品。 - 前記電子部品が、GaNを含む3族窒化物を含み、またはそれから成る半導体部品であること、
を特徴とする請求項1から5のいずれか1項に記載の電子部品。 - 前記電子部品が、第三の接触表面を有し、開口が前記第一及び第三の接触表面それぞれの上方に配置され、その開口が前記第一及び第三の接触表面に対して垂直に延び、前記第一及び第三の接触表面がそれぞれ前記ボンディング及び/または半田接点により接触されること、
を特徴とする請求項1から6のいずれか1項に記載の電子部品。 - 前記ボンディング及び/または半田接点が、前記第一及び第二の接触表面に平行に配置される表面を含むこと、
を特徴とする請求項1から7のいずれか1項に記載の電子部品。 - 前記電子部品が、ダイオードまたはトランジスタであること、
を特徴とする請求項1から8のいずれか1項に記載の電子部品。 - 基板平面に位置する第一の接触表面と少なくとも一つの第二の接触表面と、
前記第一及び第二の接触表面の上方に配置される少なくとも一つの絶縁層と、
前記部品の機械的安定性を高めるために、前記絶縁層に接して配置される少なくとも一つの安定化層と、
少なくとも一つのボンディング及び/または半田接点と、
を有し、
前記絶縁層及び前記安定化層が、前記第一の接触表面とは離れた位置にある前記安定化層の上側に開口するとともに、前記安定化層及び前記絶縁層を通じて前記第一の接触表面まで達する、少なくとも一つの開口を有し、前記ボンディング及び/または半田接点が、前記安定化層及び前記第二の接触表面の上に広がるとともに、前記開口を通じて前記第一の接触表面に接し、
少なくとも一つの保護層が、前記絶縁層と前記第一及び第二の接触表面との間に配置され、前記開口が該保護層を通じて延び、
前記開口の断面積が、前記安定化層の前記上側から前記第一の接触表面に向かう方向において減少し、
前記絶縁層が、前記第一の接触表面上にある前記保護層の端部を覆う、
電子部品の製造方法であって、
該製造方法が、
まず、少なくとも一つの保護層を、前記基板平面に適用するステップと、
続いて、前記保護層に開口を形成するステップと、
続いて、少なくとも一つの前記絶縁層を、前記第一の接触表面と少なくとも一つの前記第二の接触表面とが配置される基板平面上に適用するステップと、
続いて、少なくとも一つの前記安定化層を前記絶縁層上に適用するステップと、
続いて、少なくとも一つの前記開口を形成するステップと、
を含み、
少なくとも一つの前記絶縁層が、数マイクロメートルの厚みを有するポリマー材料であり、少なくとも一つの前記ボンディング及び/または半田接点を前記第二の接触表面から絶縁し、少なくとも一つの前記安定化層が、前記絶縁層上に広がり、前記絶縁層の硬度よりも高い硬度を有する材料を含む、製造方法。 - 前記保護層が、前記絶縁層の適用前に構造化されること、
を特徴とする請求項10に記載の製造方法。 - 前記保護層が、前記絶縁層の適用前に構造化されず、前記開口が、前記安定化層が適用された後に、適用された層全てを通じて形成されること、
を特徴とする請求項10に記載の製造方法。 - 少なくとも一つの前記安定化層が、前記絶縁層の硬化温度を超える蒸着温度で適用されること、
を特徴とする請求項10から12のいずれか1項に記載の製造方法。 - 少なくとも一つの前記絶縁層が、遠心分離及び/またはスプレーにより適用されること、
を特徴とする請求項10から13のいずれか1項に記載の製造方法。 - 少なくとも一つの前記開口が、材料を連続的に除去し、前記開口の断面積が深さが増すに従い前記第一の接触表面の方向で減少するように形成される、
請求項10から14のいずれか1項に記載の製造方法。 - 少なくとも一つの前記開口が、反応イオンエッチング、物理的除去、誘導結合プラズマエッチング、及び/またはレーザー光による気化により形成されること、
を特徴とする請求項10から15のいずれか1項に記載の製造方法。
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DE102009014237.1 | 2009-03-20 | ||
DE102009014237 | 2009-03-20 | ||
PCT/EP2010/001792 WO2010105853A1 (de) | 2009-03-20 | 2010-03-22 | Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen |
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JP2012521082A JP2012521082A (ja) | 2012-09-10 |
JP2012521082A5 JP2012521082A5 (ja) | 2014-06-19 |
JP5732035B2 true JP5732035B2 (ja) | 2015-06-10 |
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US (1) | US20120038058A1 (ja) |
EP (1) | EP2409327A1 (ja) |
JP (1) | JP5732035B2 (ja) |
WO (1) | WO2010105853A1 (ja) |
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US8964260B2 (en) * | 2012-10-17 | 2015-02-24 | Samsung Electronics Co., Ltd. | Method of controlling scan speed of scanner including automatic document feeder and scanner performing the same |
US9214423B2 (en) | 2013-03-15 | 2015-12-15 | Semiconductor Components Industries, Llc | Method of forming a HEMT semiconductor device and structure therefor |
KR102044244B1 (ko) | 2016-12-13 | 2019-12-02 | (주)웨이비스 | 질화물계 전자소자 및 그 제조방법 |
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JPS61203654A (ja) * | 1985-03-07 | 1986-09-09 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100335591B1 (ko) * | 1992-09-10 | 2002-08-24 | 텍사스 인스트루먼츠 인코포레이티드 | 집적회로디바이스의액티브회로영역상의와이어본딩방법및집적회로디바이스 |
JP4330919B2 (ja) * | 1997-03-14 | 2009-09-16 | 株式会社東芝 | マイクロ波集積回路素子 |
US6159754A (en) * | 1998-05-07 | 2000-12-12 | Intel Corporation | Method of making a circuit edit interconnect structure through the backside of an integrated circuit die |
TW445616B (en) * | 1998-12-04 | 2001-07-11 | Koninkl Philips Electronics Nv | An integrated circuit device |
JP3387083B2 (ja) * | 1999-08-27 | 2003-03-17 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US6646347B2 (en) * | 2001-11-30 | 2003-11-11 | Motorola, Inc. | Semiconductor power device and method of formation |
TW503496B (en) * | 2001-12-31 | 2002-09-21 | Megic Corp | Chip packaging structure and manufacturing process of the same |
US7294565B2 (en) * | 2003-10-01 | 2007-11-13 | International Business Machines Corporation | Method of fabricating a wire bond pad with Ni/Au metallization |
US7005752B2 (en) * | 2003-10-20 | 2006-02-28 | Texas Instruments Incorporated | Direct bumping on integrated circuit contacts enabled by metal-to-insulator adhesion |
US20060065989A1 (en) * | 2004-09-29 | 2006-03-30 | Thad Druffel | Lens forming systems and methods |
US7473943B2 (en) * | 2004-10-15 | 2009-01-06 | Nanosys, Inc. | Gate configuration for nanowire electronic devices |
TWI245345B (en) * | 2005-02-17 | 2005-12-11 | Touch Micro System Tech | Method of forming a wear-resistant dielectric layer |
TWI253735B (en) * | 2005-02-21 | 2006-04-21 | Advanced Semiconductor Eng | Chip structure and manufacturing process thereof |
US7601628B2 (en) * | 2006-11-20 | 2009-10-13 | International Business Machines Corporation | Wire and solder bond forming methods |
US7521287B2 (en) * | 2006-11-20 | 2009-04-21 | International Business Machines Corporation | Wire and solder bond forming methods |
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- 2010-03-22 EP EP10712326A patent/EP2409327A1/de not_active Withdrawn
- 2010-03-22 JP JP2012500155A patent/JP5732035B2/ja active Active
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JP2012521082A (ja) | 2012-09-10 |
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WO2010105853A1 (de) | 2010-09-23 |
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