JP2006503717A - 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 - Google Patents
微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 Download PDFInfo
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- JP2006503717A JP2006503717A JP2004546267A JP2004546267A JP2006503717A JP 2006503717 A JP2006503717 A JP 2006503717A JP 2004546267 A JP2004546267 A JP 2004546267A JP 2004546267 A JP2004546267 A JP 2004546267A JP 2006503717 A JP2006503717 A JP 2006503717A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
- B81C1/00595—Control etch selectivity
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0135—Controlling etch progression
- B81C2201/0142—Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
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- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (14)
- 微小電気機械装置を製造するための方法であって、第一の電極が内部に形成される第一の導電層と、第一の材料の第一の電気絶縁層と、前記第一の材料とは異なる第二の材料の第二の電気絶縁層と、第二の電極が内部において前記第一の電極と対向して横たわるように形成され、前記第一の電極と前記第一の絶縁層と共に前記装置を形成する第二の導電層とが基板上に連続して堆積され、前記第二の導電層が堆積された後に前記第二の導電層の材料に対して選択的なエッチング剤により前記第二の絶縁層が除去され、
前記第一の材料及び前記第二の材料のために、互いに対してのみ選択的にエッチングされるような材料が選ばれ、そして、前記第一の絶縁層の上面に前記第二の絶縁層を堆積するために、前記第一の材料に対して選択的にエッチングされるさらなる材料のさらなる層が堆積されることを特徴とする方法。 - 前記さらなる層の前記さらなる材料は、前記第二の絶縁層が前記さらなる層に対して選択的にエッチングされるように選ばれることを特徴とする請求項1に記載の方法。
- 前記第二の絶縁層は最初に部分的に除去され、そして、好ましくは、前記さらなる層まで前記さらなる層に対して選択的に除去され、そして、前記第一の絶縁層に対して前記さらなる層が選択的に除去され、その後に、前記第二の絶縁層が全体的に除去されることを特徴とする請求項1又は2に記載の方法。
- 前記さらなる層の前記さらなる材料及び前記導電層の前記材料のために同じ材料が選ばれ、そして、前記さらなる層を除去するために、前記さらなる層のエッチング剤のためのマスク層により前記第二の導電層が覆われることを特徴とする請求項3に記載の方法。
- 前記第一の材料のために窒化シリコンが選ばれ、そして、前記第二の材料のために酸化シリコンが選ばれることを特徴とする請求項1乃至4いずれかに記載の方法。
- 前記第二の絶縁層を除去するためのエッチング剤として、フッ化アンモニウム(NH4F)及びフッ化窒素(HF)の水溶液が選ばれることを特徴とする請求項5に記載の方法。
- 前記導電層及び前記さらなる層はアルミニウムより作られることを特徴とする請求項1乃至6いずれかに記載の方法。
- 前記さらなる層のためのエッチング剤として燐酸、酢酸、そして、硫酸の混合物が選ばれることを特徴とする請求項7に記載の方法。
- 前記第一の導電層及び前記第二の導電層の両者は二組の複数分断部分から形成され、前記第二の導電層の前記複数分断部分は前記第一の導電層の前記複数分断部分の上部に形成されることを特徴とする請求項1乃至8いずれかに記載の方法。
- すべての層がCVD又はスパッタリングにより堆積されることを特徴とする請求項1乃至9いずれかに記載の方法。
- 請求項1乃至10いずれかに記載の方法を採用した電子装置を製造するための方法。
- 請求項1乃至10いずれかに記載の方法を採用して得られた微小電気機械装置。
- チューナブル・キャパシタを備えた請求項12に記載の微小電気機械装置。
- 請求項12又は13に記載の微小電気機械装置を備えた電子装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02079467 | 2002-10-24 | ||
PCT/IB2003/004586 WO2004037713A1 (en) | 2002-10-24 | 2003-10-17 | Method for manufacturing a micro-electromechanical device and micro-electromechanical device obtained therewith |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006503717A true JP2006503717A (ja) | 2006-02-02 |
JP4555950B2 JP4555950B2 (ja) | 2010-10-06 |
Family
ID=32116295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004546267A Expired - Fee Related JP4555950B2 (ja) | 2002-10-24 | 2003-10-17 | 微小電気機械装置を製造するための方法及びこの方法により得られる微小電気機械装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7303934B2 (ja) |
EP (1) | EP1556307A1 (ja) |
JP (1) | JP4555950B2 (ja) |
CN (1) | CN100415635C (ja) |
AU (1) | AU2003269351A1 (ja) |
WO (1) | WO2004037713A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006046192A1 (en) | 2004-10-27 | 2006-05-04 | Koninklijke Philips Electronics N. V. | Spring structure for mems device |
TWI395258B (zh) * | 2005-11-11 | 2013-05-01 | Semiconductor Energy Lab | 微結構以及微機電系統的製造方法 |
JP4907297B2 (ja) * | 2005-11-11 | 2012-03-28 | 株式会社半導体エネルギー研究所 | 微小構造体及び微小電気機械式装置の作製方法 |
EP2038207A2 (en) * | 2006-06-29 | 2009-03-25 | Nxp B.V. | Integrated single-crystal mems device |
US8980698B2 (en) | 2008-11-10 | 2015-03-17 | Nxp, B.V. | MEMS devices |
WO2019190837A1 (en) * | 2018-03-30 | 2019-10-03 | The Gillette Company Llc | Shaving razor cartridge and method of manufacture |
AU2019242215B2 (en) | 2018-03-30 | 2022-03-31 | The Gillette Company Llc | Shaving razor cartridge and method of manufacture |
US11826924B2 (en) | 2018-03-30 | 2023-11-28 | The Gillette Company Llc | Shaving razor cartridge and method of manufacture |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06343272A (ja) * | 1993-05-28 | 1994-12-13 | Sony Corp | マイクロマシンの製造方法 |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
JPH11243214A (ja) * | 1998-02-26 | 1999-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 微小構造体の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3361916B2 (ja) * | 1995-06-28 | 2003-01-07 | シャープ株式会社 | 微小構造の形成方法 |
US5945898A (en) * | 1996-05-31 | 1999-08-31 | The Regents Of The University Of California | Magnetic microactuator |
KR100577410B1 (ko) * | 1999-11-30 | 2006-05-08 | 엘지.필립스 엘시디 주식회사 | 엑스레이 영상 감지소자 및 그 제조방법 |
US7307775B2 (en) * | 2000-12-07 | 2007-12-11 | Texas Instruments Incorporated | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
JP2003168690A (ja) * | 2001-11-30 | 2003-06-13 | Seiko Epson Corp | トランジスタ及びトランジスタの製造方法 |
US6888658B2 (en) * | 2002-05-31 | 2005-05-03 | Lucent Technologies Inc. | Method and geometry for reducing drift in electrostatically actuated devices |
-
2003
- 2003-10-17 JP JP2004546267A patent/JP4555950B2/ja not_active Expired - Fee Related
- 2003-10-17 US US10/531,934 patent/US7303934B2/en not_active Expired - Lifetime
- 2003-10-17 EP EP03751132A patent/EP1556307A1/en not_active Ceased
- 2003-10-17 CN CNB2003801020534A patent/CN100415635C/zh not_active Expired - Fee Related
- 2003-10-17 AU AU2003269351A patent/AU2003269351A1/en not_active Abandoned
- 2003-10-17 WO PCT/IB2003/004586 patent/WO2004037713A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06343272A (ja) * | 1993-05-28 | 1994-12-13 | Sony Corp | マイクロマシンの製造方法 |
US5638946A (en) * | 1996-01-11 | 1997-06-17 | Northeastern University | Micromechanical switch with insulated switch contact |
JPH11243214A (ja) * | 1998-02-26 | 1999-09-07 | Nippon Telegr & Teleph Corp <Ntt> | 微小構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4555950B2 (ja) | 2010-10-06 |
EP1556307A1 (en) | 2005-07-27 |
WO2004037713A1 (en) | 2004-05-06 |
CN1708450A (zh) | 2005-12-14 |
AU2003269351A1 (en) | 2004-05-13 |
US7303934B2 (en) | 2007-12-04 |
US20060040505A1 (en) | 2006-02-23 |
CN100415635C (zh) | 2008-09-03 |
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