DE69323515D1 - Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten Bauelements - Google Patents
Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten BauelementsInfo
- Publication number
- DE69323515D1 DE69323515D1 DE69323515T DE69323515T DE69323515D1 DE 69323515 D1 DE69323515 D1 DE 69323515D1 DE 69323515 T DE69323515 T DE 69323515T DE 69323515 T DE69323515 T DE 69323515T DE 69323515 D1 DE69323515 D1 DE 69323515D1
- Authority
- DE
- Germany
- Prior art keywords
- active area
- wire bonding
- integrated device
- bonding over
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94308792A | 1992-09-10 | 1992-09-10 |
Publications (2)
Publication Number | Publication Date |
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DE69323515D1 true DE69323515D1 (de) | 1999-03-25 |
DE69323515T2 DE69323515T2 (de) | 1999-06-17 |
Family
ID=25479083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323515T Expired - Fee Related DE69323515T2 (de) | 1992-09-10 | 1993-09-10 | Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten Bauelements |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0587442B1 (de) |
JP (1) | JPH06204277A (de) |
KR (1) | KR100335591B1 (de) |
DE (1) | DE69323515T2 (de) |
MY (1) | MY110904A (de) |
SG (1) | SG47534A1 (de) |
TW (1) | TW253987B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3420435B2 (ja) | 1996-07-09 | 2003-06-23 | 松下電器産業株式会社 | 基板の製造方法、半導体装置及び半導体装置の製造方法 |
TW445616B (en) | 1998-12-04 | 2001-07-11 | Koninkl Philips Electronics Nv | An integrated circuit device |
US8021976B2 (en) | 2002-10-15 | 2011-09-20 | Megica Corporation | Method of wire bonding over active area of a semiconductor circuit |
US6503820B1 (en) * | 1999-10-04 | 2003-01-07 | Koninklijke Philips Electronics N.V. | Die pad crack absorption system and method for integrated circuit chip fabrication |
DE10200932A1 (de) * | 2002-01-12 | 2003-07-24 | Philips Intellectual Property | Diskretes Halbleiterbauelement |
DE10242325A1 (de) * | 2002-09-12 | 2004-04-01 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | Halbleiter mit Isolierschicht und Verfahren zu dessen Herstellung |
DE10245867A1 (de) * | 2002-09-30 | 2004-04-15 | Siced Electronics Development Gmbh & Co. Kg | Leistungs-Halbleiterbauelement mit verbesserten Anschlusskontakten und Verfahren zu dessen Herstellung |
US7777223B2 (en) * | 2004-03-16 | 2010-08-17 | Pansonic Corporation | Semiconductor device |
JP4696532B2 (ja) | 2004-05-20 | 2011-06-08 | 株式会社デンソー | パワー複合集積型半導体装置およびその製造方法 |
JP4674522B2 (ja) | 2004-11-11 | 2011-04-20 | 株式会社デンソー | 半導体装置 |
DE102006003930A1 (de) * | 2006-01-26 | 2007-08-09 | Infineon Technologies Austria Ag | Leistungshalbleiterelement mit internen Bonddrahtverbindungen zu einem Bauelementsubstrat und Verfahren zur Herstellung desselben |
WO2010105853A1 (de) * | 2009-03-20 | 2010-09-23 | Microgan Gmbh | Vertikal kontaktiertes elektronisches bauelement sowie verfahren zur herstellung eines solchen |
JP2015204393A (ja) * | 2014-04-15 | 2015-11-16 | サンケン電気株式会社 | 半導体装置 |
JP6690509B2 (ja) * | 2016-11-22 | 2020-04-28 | 株式会社村田製作所 | 半導体装置 |
US10663175B2 (en) | 2017-05-30 | 2020-05-26 | Samsung Electronics Co., Ltd. | Home appliance |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017886A (en) * | 1972-10-18 | 1977-04-12 | Hitachi, Ltd. | Discrete semiconductor device having polymer resin as insulator and method for making the same |
JPS51118965A (en) * | 1976-02-23 | 1976-10-19 | Hitachi Ltd | Insulation film of semiconductor device |
US4723197A (en) * | 1985-12-16 | 1988-02-02 | National Semiconductor Corporation | Bonding pad interconnection structure |
JPH01103867A (ja) * | 1987-10-16 | 1989-04-20 | Sanyo Electric Co Ltd | トランジスタ |
JP2559602B2 (ja) * | 1987-11-30 | 1996-12-04 | 超音波工業株式会社 | ワイヤボンダ用超音波振動子 |
JP2593965B2 (ja) * | 1991-01-29 | 1997-03-26 | 三菱電機株式会社 | 半導体装置 |
US5201454A (en) * | 1991-09-30 | 1993-04-13 | Texas Instruments Incorporated | Process for enhanced intermetallic growth in IC interconnections |
-
1993
- 1993-09-09 KR KR1019930018082A patent/KR100335591B1/ko not_active IP Right Cessation
- 1993-09-10 MY MYPI93001860A patent/MY110904A/en unknown
- 1993-09-10 JP JP5226045A patent/JPH06204277A/ja active Pending
- 1993-09-10 SG SG1996002685A patent/SG47534A1/en unknown
- 1993-09-10 EP EP93307165A patent/EP0587442B1/de not_active Expired - Lifetime
- 1993-09-10 DE DE69323515T patent/DE69323515T2/de not_active Expired - Fee Related
-
1994
- 1994-04-21 TW TW083103530A patent/TW253987B/zh active
Also Published As
Publication number | Publication date |
---|---|
SG47534A1 (en) | 1998-04-17 |
EP0587442A3 (de) | 1994-08-03 |
KR940008033A (ko) | 1994-04-28 |
KR100335591B1 (ko) | 2002-08-24 |
EP0587442A2 (de) | 1994-03-16 |
JPH06204277A (ja) | 1994-07-22 |
MY110904A (en) | 1999-06-30 |
DE69323515T2 (de) | 1999-06-17 |
TW253987B (de) | 1995-08-11 |
EP0587442B1 (de) | 1999-02-17 |
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