DE69323515D1 - Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten Bauelements - Google Patents

Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten Bauelements

Info

Publication number
DE69323515D1
DE69323515D1 DE69323515T DE69323515T DE69323515D1 DE 69323515 D1 DE69323515 D1 DE 69323515D1 DE 69323515 T DE69323515 T DE 69323515T DE 69323515 T DE69323515 T DE 69323515T DE 69323515 D1 DE69323515 D1 DE 69323515D1
Authority
DE
Germany
Prior art keywords
active area
wire bonding
integrated device
bonding over
over
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69323515T
Other languages
English (en)
Other versions
DE69323515T2 (de
Inventor
Katherine G Heinen
Rafael Verity Instrumen Alfaro
Roger J Stierman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE69323515D1 publication Critical patent/DE69323515D1/de
Application granted granted Critical
Publication of DE69323515T2 publication Critical patent/DE69323515T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69323515T 1992-09-10 1993-09-10 Verfahren zum Drahtbonden über einem aktiven Gebiet eines integrierten Bauelements Expired - Fee Related DE69323515T2 (de)

Applications Claiming Priority (1)

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US94308792A 1992-09-10 1992-09-10

Publications (2)

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DE69323515D1 true DE69323515D1 (de) 1999-03-25
DE69323515T2 DE69323515T2 (de) 1999-06-17

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EP (1) EP0587442B1 (de)
JP (1) JPH06204277A (de)
KR (1) KR100335591B1 (de)
DE (1) DE69323515T2 (de)
MY (1) MY110904A (de)
SG (1) SG47534A1 (de)
TW (1) TW253987B (de)

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JP2015204393A (ja) * 2014-04-15 2015-11-16 サンケン電気株式会社 半導体装置
JP6690509B2 (ja) * 2016-11-22 2020-04-28 株式会社村田製作所 半導体装置
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SG47534A1 (en) 1998-04-17
EP0587442A3 (de) 1994-08-03
KR940008033A (ko) 1994-04-28
KR100335591B1 (ko) 2002-08-24
EP0587442A2 (de) 1994-03-16
JPH06204277A (ja) 1994-07-22
MY110904A (en) 1999-06-30
DE69323515T2 (de) 1999-06-17
TW253987B (de) 1995-08-11
EP0587442B1 (de) 1999-02-17

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