KR100313382B1 - 실라잔중합체로부터유도된실리카피막을전자기판에부착시키는방법 - Google Patents

실라잔중합체로부터유도된실리카피막을전자기판에부착시키는방법 Download PDF

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Publication number
KR100313382B1
KR100313382B1 KR1019940002069A KR19940002069A KR100313382B1 KR 100313382 B1 KR100313382 B1 KR 100313382B1 KR 1019940002069 A KR1019940002069 A KR 1019940002069A KR 19940002069 A KR19940002069 A KR 19940002069A KR 100313382 B1 KR100313382 B1 KR 100313382B1
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South Korea
Prior art keywords
silazane
coating
group
silazane polymer
polymer
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019940002069A
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English (en)
Korean (ko)
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KR940019814A (ko
Inventor
로날드하워드배니
그리쉬챤드라
로렌앤드류할루스카
Original Assignee
맥켈러 로버트 루이스
다우 코닝 코포레이션
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Publication of KR940019814A publication Critical patent/KR940019814A/ko
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Publication of KR100313382B1 publication Critical patent/KR100313382B1/ko
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2203/00—Other substrates
    • B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2518/00—Other type of polymers
    • B05D2518/10—Silicon-containing polymers
    • B05D2518/12—Ceramic precursors (polysiloxanes, polysilazanes)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H10P14/6689—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
KR1019940002069A 1993-02-05 1994-02-04 실라잔중합체로부터유도된실리카피막을전자기판에부착시키는방법 Expired - Fee Related KR100313382B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1387393A 1993-02-05 1993-02-05
US08/013,873 1993-02-05

Publications (2)

Publication Number Publication Date
KR940019814A KR940019814A (ko) 1994-09-15
KR100313382B1 true KR100313382B1 (ko) 2001-12-28

Family

ID=21762247

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940002069A Expired - Fee Related KR100313382B1 (ko) 1993-02-05 1994-02-04 실라잔중합체로부터유도된실리카피막을전자기판에부착시키는방법

Country Status (6)

Country Link
US (1) US5358739A (enExample)
EP (1) EP0611067B1 (enExample)
JP (1) JPH072511A (enExample)
KR (1) KR100313382B1 (enExample)
DE (1) DE69416881T2 (enExample)
TW (1) TW270902B (enExample)

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JP2790163B2 (ja) * 1993-07-29 1998-08-27 富士通株式会社 シリコン酸化膜の形成方法、半導体装置の製造方法及びフラットディスプレイ装置の製造方法
US5837318A (en) * 1995-04-26 1998-11-17 Mcdonnell Douglas Corporation Process for production of low dielectric ceramic composites
EP0745974B1 (en) * 1995-05-29 2002-08-14 Fuji Photo Film Co., Ltd. Method for forming silica protective films
TW353108B (en) * 1995-06-16 1999-02-21 Dow Corning Composite electronic coatings
US5635240A (en) * 1995-06-19 1997-06-03 Dow Corning Corporation Electronic coating materials using mixed polymers
US5661092A (en) * 1995-09-01 1997-08-26 The University Of Connecticut Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof
JP2825077B2 (ja) * 1996-01-26 1998-11-18 日本電気株式会社 半導体装置の製造方法および製造装置
KR100342575B1 (ko) * 1996-11-11 2002-07-04 우츠미 오사무 기재의 평탄화 방법, 피막 부착 기재 및 반도체 장치의 제조방법
US5924005A (en) * 1997-02-18 1999-07-13 Motorola, Inc. Process for forming a semiconductor device
EP0862202A1 (en) * 1997-02-27 1998-09-02 Nec Corporation Method for making a semiconductor device with a planarizing SOG layer and apparatus used in the same method
US5932283A (en) * 1998-05-01 1999-08-03 Nec Corporation Method for fabricating SiO2 film
JP2000012536A (ja) 1998-06-24 2000-01-14 Tokyo Ohka Kogyo Co Ltd シリカ被膜形成方法
US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
TW486824B (en) * 1999-03-30 2002-05-11 Seiko Epson Corp Method of manufacturing thin-film transistor
KR100362834B1 (ko) 2000-05-02 2002-11-29 삼성전자 주식회사 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치
US6576964B1 (en) * 2000-08-31 2003-06-10 Micron Technology, Inc. Dielectric layer for a semiconductor device having less current leakage and increased capacitance
US6410968B1 (en) * 2000-08-31 2002-06-25 Micron Technology, Inc. Semiconductor device with barrier layer
US6521544B1 (en) 2000-08-31 2003-02-18 Micron Technology, Inc. Method of forming an ultra thin dielectric film
US6479405B2 (en) 2000-10-12 2002-11-12 Samsung Electronics Co., Ltd. Method of forming silicon oxide layer in semiconductor manufacturing process using spin-on glass composition and isolation method using the same method
US6376431B1 (en) 2001-03-15 2002-04-23 Honeywell International Inc. Reduced wear carbon brake material
US20040070704A1 (en) * 2001-10-02 2004-04-15 Lazarev Pavel I. Multilayer plate for the fabrication of a display panel
US7317499B2 (en) * 2002-08-22 2008-01-08 Nitto Denko Corporation Multilayer plate and display panel with anisotropic crystal film and conducting protective layer
JP2005116546A (ja) * 2003-10-02 2005-04-28 Toshiba Corp 半導体装置およびその製造方法
JP4501519B2 (ja) * 2004-04-23 2010-07-14 凸版印刷株式会社 Ｐｄｐ用金属隔壁の製造方法
US7439111B2 (en) * 2004-09-29 2008-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
DE102006008308A1 (de) 2006-02-23 2007-08-30 Clariant International Limited Polysilazane enthaltende Beschichtungen zur Vermeidung von Zunderbildung und Korrosion
JP5100077B2 (ja) * 2006-10-04 2012-12-19 敏夫 寺中 シリカ膜の製造方法
JP5160189B2 (ja) * 2007-10-26 2013-03-13 ＡｚエレクトロニックマテリアルズＩｐ株式会社 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物
JP5069582B2 (ja) * 2008-02-05 2012-11-07 有限会社コンタミネーション・コントロール・サービス シリカ膜の形成方法
JP5329825B2 (ja) 2008-02-25 2013-10-30 株式会社東芝 半導体装置の製造方法
JP5159680B2 (ja) * 2009-03-24 2013-03-06 株式会社東芝 塗布型膜の形成方法
KR20130090766A (ko) * 2010-06-18 2013-08-14 제이엔씨 주식회사 유체 분리용 복합 다공질막, 이의 제조 방법 및 필터
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Also Published As

Publication number Publication date
DE69416881D1 (de) 1999-04-15
JPH072511A (ja) 1995-01-06
US5358739A (en) 1994-10-25
KR940019814A (ko) 1994-09-15
EP0611067A2 (en) 1994-08-17
EP0611067A3 (en) 1995-01-25
EP0611067B1 (en) 1999-03-10
DE69416881T2 (de) 1999-11-04
TW270902B (enExample) 1996-02-21

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