KR100284989B1 - 웨이퍼용 접착 시트 및 그를 사용한 반도체 장치 제조 공정 - Google Patents

웨이퍼용 접착 시트 및 그를 사용한 반도체 장치 제조 공정 Download PDF

Info

Publication number
KR100284989B1
KR100284989B1 KR1019940009081A KR19940009081A KR100284989B1 KR 100284989 B1 KR100284989 B1 KR 100284989B1 KR 1019940009081 A KR1019940009081 A KR 1019940009081A KR 19940009081 A KR19940009081 A KR 19940009081A KR 100284989 B1 KR100284989 B1 KR 100284989B1
Authority
KR
South Korea
Prior art keywords
chips
adhesive layer
wafer
adhesive sheet
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940009081A
Other languages
English (en)
Korean (ko)
Inventor
아마가이 마사쯔미
에베 가즈요시
세누 히데오
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
쇼지 고메이
린텍 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26403656&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100284989(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드, 쇼지 고메이, 린텍 가부시키가이샤 filed Critical 윌리엄 비. 켐플러
Application granted granted Critical
Publication of KR100284989B1 publication Critical patent/KR100284989B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/4951—Chip-on-leads or leads-on-chip techniques, i.e. inner lead fingers being used as die pad
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09J133/062—Copolymers with monomers not covered by C09J133/06
    • C09J133/064—Copolymers with monomers not covered by C09J133/06 containing anhydride, COOH or COOM groups, with M being metal or onium-cation
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesive Tapes (AREA)
  • Lead Frames For Integrated Circuits (AREA)
KR1019940009081A 1993-04-28 1994-04-28 웨이퍼용 접착 시트 및 그를 사용한 반도체 장치 제조 공정 Expired - Lifetime KR100284989B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP93-102761 1993-04-28
JP10276193 1993-04-28
JP94-62610 1994-03-31
JP06261094A JP3410202B2 (ja) 1993-04-28 1994-03-31 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR100284989B1 true KR100284989B1 (ko) 2001-03-15

Family

ID=26403656

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940009081A Expired - Lifetime KR100284989B1 (ko) 1993-04-28 1994-04-28 웨이퍼용 접착 시트 및 그를 사용한 반도체 장치 제조 공정

Country Status (9)

Country Link
US (1) US6297076B1 (enExample)
EP (1) EP0622833B1 (enExample)
JP (1) JP3410202B2 (enExample)
KR (1) KR100284989B1 (enExample)
CN (1) CN1090220C (enExample)
CA (1) CA2122278C (enExample)
DE (1) DE69417463T2 (enExample)
MY (1) MY115305A (enExample)
TW (1) TW245825B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791722B1 (ko) 2002-02-14 2008-01-03 닛토덴코 가부시키가이샤 플렉시블 프린트 배선판 고정용 접착 시이트 및 플렉시블프린트 배선판에의 전자 부품의 장착 방법
KR101888198B1 (ko) 2010-12-28 2018-08-13 닛토덴코 가부시키가이샤 방사선 경화형 점착제 조성물 및 점착 시트

Families Citing this family (57)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19520238C2 (de) * 1995-06-02 1998-01-15 Beiersdorf Ag Selbstklebeband
US6342434B1 (en) 1995-12-04 2002-01-29 Hitachi, Ltd. Methods of processing semiconductor wafer, and producing IC card, and carrier
MY118036A (en) * 1996-01-22 2004-08-30 Lintec Corp Wafer dicing/bonding sheet and process for producing semiconductor device
US6007920A (en) * 1996-01-22 1999-12-28 Texas Instruments Japan, Ltd. Wafer dicing/bonding sheet and process for producing semiconductor device
EP0959498B1 (en) * 1996-10-08 2008-06-18 Hitachi Chemical Company, Ltd. Semiconductor device, semiconductor chip mounting substrate, methods of manufacturing the device and substrate, adhesive, and adhesive double coated film
GB2320615B (en) 1996-12-19 2001-06-20 Lintec Corp Process for producing a chip and pressure sensitive adhesive sheet for said process
US6312800B1 (en) 1997-02-10 2001-11-06 Lintec Corporation Pressure sensitive adhesive sheet for producing a chip
US6235387B1 (en) * 1998-03-30 2001-05-22 3M Innovative Properties Company Semiconductor wafer processing tapes
JP3739570B2 (ja) 1998-06-02 2006-01-25 リンテック株式会社 粘着シートおよびその利用方法
US6331080B1 (en) * 1998-07-15 2001-12-18 3M Innovative Properties Company Optical fiber connector using colored photocurable adhesive
JP3669196B2 (ja) 1998-07-27 2005-07-06 日東電工株式会社 紫外線硬化型粘着シート
JP3410371B2 (ja) 1998-08-18 2003-05-26 リンテック株式会社 ウエハ裏面研削時の表面保護シートおよびその利用方法
JP3661444B2 (ja) 1998-10-28 2005-06-15 株式会社ルネサステクノロジ 半導体装置、半導体ウエハ、半導体モジュールおよび半導体装置の製造方法
JP4544658B2 (ja) * 1999-02-02 2010-09-15 日東電工株式会社 半導体ウエハ保護用粘着シート及び半導体ウエハの研削方法
US6660943B1 (en) * 1999-07-08 2003-12-09 Sunstar Giken Kabushiki Kaisha Underfilling material for semiconductor package
JP4230080B2 (ja) * 2000-02-18 2009-02-25 リンテック株式会社 ウエハ貼着用粘着シート
US6372074B1 (en) * 2000-06-14 2002-04-16 Avery Dennison Corporation Method of forming a protective coating for color filters
KR100351705B1 (ko) * 2000-06-27 2002-09-11 한솔제지주식회사 다이싱테이프용 감광성 점착 조성물
US6472065B1 (en) * 2000-07-13 2002-10-29 3M Innovative Properties Company Clear adhesive sheet
US6759121B2 (en) 2000-07-13 2004-07-06 3M Innovative Properties Company Clear adhesive sheet
TW497236B (en) * 2001-08-27 2002-08-01 Chipmos Technologies Inc A soc packaging process
US20030092246A1 (en) * 2001-10-11 2003-05-15 Wanat Stanley F. Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
JP2003234359A (ja) * 2002-02-08 2003-08-22 Hitachi Ltd 半導体装置の製造方法
JP4189156B2 (ja) * 2002-02-22 2008-12-03 株式会社トクヤマ チップ貼設シート
JP2004273895A (ja) * 2003-03-11 2004-09-30 Disco Abrasive Syst Ltd 半導体ウエーハの分割方法
DE112004000768B4 (de) * 2003-05-12 2015-07-23 Tokyo Seimitsu Co., Ltd. Verfahren zum Trennen eines plattenartigen Elements
FR2857502B1 (fr) * 2003-07-10 2006-02-24 Soitec Silicon On Insulator Substrats pour systemes contraints
JP2005051018A (ja) * 2003-07-28 2005-02-24 Sanyo Electric Co Ltd 半導体装置及びその製造方法
DE10340409B4 (de) * 2003-09-02 2007-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Trägerwafer und Verfahren zum Bearbeiten eines Halbleiterwafers unter Verwendung eines Trägerwafers
US20050249945A1 (en) * 2004-05-10 2005-11-10 Wen Kun Yang Manufacturing tool for wafer level package and method of placing dies
JP2006152141A (ja) * 2004-11-30 2006-06-15 Furukawa Electric Co Ltd:The 粘着テープ
DE102005055769A1 (de) * 2005-11-21 2007-05-24 Tesa Ag Verfahren zur temporären Fixierung eines polymeren Schichtmaterials auf rauen Oberflächen
JP5047556B2 (ja) * 2006-07-26 2012-10-10 リンテック株式会社 光学機能性フィルム貼合用粘着剤、粘着剤付き光学機能性フィルム及びその製造方法
JP5101111B2 (ja) * 2007-01-05 2012-12-19 日東電工株式会社 半導体基板加工用粘着シート
WO2009001492A1 (ja) * 2007-06-22 2008-12-31 Sumitomo Bakelite Co., Ltd. 接着フィルムおよびこれを用いた半導体装置
JP4553400B2 (ja) * 2008-02-18 2010-09-29 日東電工株式会社 ダイシング・ダイボンドフィルム
JP4318743B1 (ja) * 2008-10-07 2009-08-26 昭和高分子株式会社 紫外線硬化型再剥離性粘着剤組成物及びこれを用いた粘着シート
JP2011023396A (ja) * 2009-07-13 2011-02-03 Nitto Denko Corp 表面保護シート
JP5528169B2 (ja) * 2010-03-26 2014-06-25 東洋ゴム工業株式会社 研磨パッドおよびその製造方法、ならびに半導体デバイスの製造方法
EP2368955A1 (de) 2010-03-26 2011-09-28 Sika Technology AG Formgedächtnis-Material auf Basis eines Strukturklebstoffs
GB201012595D0 (en) 2010-07-27 2010-09-08 Zephyros Inc Oriented structural adhesives
JP2012227232A (ja) * 2011-04-15 2012-11-15 Denki Kagaku Kogyo Kk 加工用粘着シート及びそれを用いた板状材料の製造方法
JP6063796B2 (ja) * 2013-03-29 2017-01-18 積水化成品工業株式会社 帯電防止シート
US20160272849A1 (en) * 2013-03-29 2016-09-22 Sekisui Plastics Co., Ltd. Temporary fixing material
US10577522B2 (en) 2013-07-26 2020-03-03 Zephyros, Inc. Thermosetting adhesive films including a fibrous carrier
JP6334223B2 (ja) * 2014-03-26 2018-05-30 リンテック株式会社 粘着シート
CN104312456B (zh) * 2014-10-28 2016-03-30 成都纳硕科技有限公司 一种木质板材用紫外光固化胶及其制备方法
KR102335109B1 (ko) 2014-12-15 2021-12-03 삼성전자 주식회사 미세 패턴 형성 방법 및 이를 이용한 집적회로 소자의 제조 방법
JP6626254B2 (ja) * 2015-02-03 2019-12-25 株式会社テセック 半導体デバイス測定方法
KR102546307B1 (ko) 2015-12-02 2023-06-21 삼성전자주식회사 발광 소자 및 이를 포함하는 표시 장치
JP6917166B2 (ja) * 2017-03-15 2021-08-11 マクセルホールディングス株式会社 ダイシング用粘着テープ、ダイシング用粘着テープの製造方法、および半導体チップの製造方法
JP7035720B2 (ja) * 2018-03-29 2022-03-15 住友ベークライト株式会社 半導体基板加工用粘着テープ
EP3924999A4 (en) 2019-02-15 2022-11-02 Kulicke & Soffa Netherlands B.V. DYNAMIC SEPARATOR TAPES FOR MOUNTING DISCRETE COMPONENTS
JP2023507966A (ja) * 2019-12-17 2023-02-28 キューリック・アンド・ソファ・ネザーランズ・ベーフェー 個別構成要素を受け入れるための接着テープ
DE102022100661A1 (de) 2022-01-12 2023-07-13 Forschungsverbund Berlin E.V. Verfahren und Vorrichtung zum Herstellen einer Halbleiterstruktur
CN115229671B (zh) * 2022-08-24 2024-08-06 关勒铭(湖州)晶体材料科技有限公司 一种基于固结磨料的新型红宝石高效研磨工艺
CN117630316B (zh) * 2023-12-14 2025-01-14 池州市千润宇信息技术有限公司 一种污水检测系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4296542A (en) * 1980-07-11 1981-10-27 Presco, Inc. Control of small parts in a manufacturing operation
US4968559A (en) * 1985-02-14 1990-11-06 Bando Chemical Industries. Ltd. Pressure sensitive adhesive film with barrier layer
DE3639266A1 (de) * 1985-12-27 1987-07-02 Fsk K K Haftfolie
US5187007A (en) * 1985-12-27 1993-02-16 Lintec Corporation Adhesive sheets
GB2221470B (en) * 1985-12-27 1990-09-05 Fsk Kk Adhesive sheet suitable for semiconductor wafer processing
FI88595C (fi) * 1986-08-01 1993-06-10 Lintec Corp Etikettpapper foer kopiering
US5149586A (en) * 1987-07-08 1992-09-22 Furukawa Electric Co., Ltd. Radiation-curable adhesive tape
DE3850451T2 (de) * 1987-07-08 1995-03-09 Furukawa Electric Co Ltd Strahlungsvernetzbare Klebestreifen.
US5281473A (en) * 1987-07-08 1994-01-25 Furakawa Electric Co., Ltd. Radiation-curable adhesive tape
MY103125A (en) * 1987-07-24 1993-04-30 Lintec Corp Cover tape for sealing chip-holding parts of carrier tape
JPH0715087B2 (ja) * 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
JP2683574B2 (ja) * 1988-08-08 1997-12-03 住友電気工業株式会社 電力ケーブルの接続部
JP3181284B2 (ja) * 1990-01-12 2001-07-03 旭電化工業株式会社 エネルギー線反応性粘着剤組成物
JPH05206267A (ja) * 1992-01-29 1993-08-13 Fujitsu Ltd 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791722B1 (ko) 2002-02-14 2008-01-03 닛토덴코 가부시키가이샤 플렉시블 프린트 배선판 고정용 접착 시이트 및 플렉시블프린트 배선판에의 전자 부품의 장착 방법
KR101888198B1 (ko) 2010-12-28 2018-08-13 닛토덴코 가부시키가이샤 방사선 경화형 점착제 조성물 및 점착 시트

Also Published As

Publication number Publication date
TW245825B (enExample) 1995-04-21
JP3410202B2 (ja) 2003-05-26
EP0622833A1 (en) 1994-11-02
CA2122278C (en) 2005-04-12
DE69417463T2 (de) 1999-08-19
CN1101367A (zh) 1995-04-12
EP0622833B1 (en) 1999-03-31
JPH07135189A (ja) 1995-05-23
MY115305A (en) 2003-05-31
DE69417463D1 (de) 1999-05-06
US6297076B1 (en) 2001-10-02
CA2122278A1 (en) 1994-10-29
CN1090220C (zh) 2002-09-04

Similar Documents

Publication Publication Date Title
KR100284989B1 (ko) 웨이퍼용 접착 시트 및 그를 사용한 반도체 장치 제조 공정
KR100655035B1 (ko) 반도체 장치의 제조방법
JP3544362B2 (ja) 半導体チップの製造方法
US6312800B1 (en) Pressure sensitive adhesive sheet for producing a chip
JP4364508B2 (ja) チップ裏面用保護膜形成用シートおよび保護膜付きチップの製造方法
US20050158009A1 (en) Structure and method for temporarily holding integrated circuit chips in accurate alignment
JP3553551B2 (ja) 半導体ウェハを用いた半導体装置の製造方法
EP1883106A2 (en) Method for working object to be worked
US6958256B2 (en) Process for the back-surface grinding of wafers
JPH10335271A (ja) ウェハ貼着用シートおよび半導体装置の製造方法
US20060252234A1 (en) Hardenable pressure sensitive adhesive sheet for dicing/die-bonding and method for manufacturing semiconductor device
EP1650790B1 (en) Hardenable pressure sensitive adhesive sheet for dicing/die-bonding and method for manufacturing semiconductor device
JP2007123404A (ja) ダイシングテープ、および半導体ウェハダイシング方法
JP2008072108A (ja) チップ用保護膜形成用シート
TW202035605A (zh) 接著膜、附有切晶帶之接著膜、及半導體裝置製造方法
JP4271597B2 (ja) チップ用保護膜形成用シート
US20030029544A1 (en) Pressure sensitive adhesive double coated sheet and method of use thereof
JP7319134B2 (ja) 半導体素子の製造方法
JP2728333B2 (ja) ウェハ貼着用粘着シートおよびチップのピックアップ方法
JP3523947B2 (ja) ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法並びにその半導体装置
JP2001156028A (ja) 半導体装置の製造方法
WO2023157847A1 (ja) ダイシングダイボンディングフィルム、及び、半導体装置を製造する方法
JP2007059936A (ja) ダイボンディング用フィルム状接着剤並びにそれを用いた半導体装置の製造方法及び半導体装置
KR20210098848A (ko) 보호막 형성 필름, 보호막 형성용 복합 시트 및 장치의 제조 방법
HK1035261B (en) Method for producing semiconductor device

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19940428

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19990331

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19940428

Comment text: Patent Application

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20001031

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20001227

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20001228

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20031223

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20041227

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20051222

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20061226

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20071224

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20081224

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20091224

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20101208

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20111202

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20121130

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20121130

Start annual number: 13

End annual number: 13

FPAY Annual fee payment

Payment date: 20131218

Year of fee payment: 14

PR1001 Payment of annual fee

Payment date: 20131218

Start annual number: 14

End annual number: 14

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20141028

Termination category: Expiration of duration