KR100281935B1 - 자기 바이어스 측정방법 및 그 장치와 정전 흡착장치 - Google Patents

자기 바이어스 측정방법 및 그 장치와 정전 흡착장치 Download PDF

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Publication number
KR100281935B1
KR100281935B1 KR1019940010382A KR19940010382A KR100281935B1 KR 100281935 B1 KR100281935 B1 KR 100281935B1 KR 1019940010382 A KR1019940010382 A KR 1019940010382A KR 19940010382 A KR19940010382 A KR 19940010382A KR 100281935 B1 KR100281935 B1 KR 100281935B1
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KR
South Korea
Prior art keywords
voltage
electrostatic adsorption
electrode
electrodes
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940010382A
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English (en)
Korean (ko)
Other versions
KR940027054A (ko
Inventor
사에키히로아키
곤도마사키
Original Assignee
히가시 데쓰로
동경 엘렉트론주식회사
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Filing date
Publication date
Priority claimed from JP13385693A external-priority patent/JP3306677B2/ja
Priority claimed from JP13915393A external-priority patent/JP3315197B2/ja
Application filed by 히가시 데쓰로, 동경 엘렉트론주식회사 filed Critical 히가시 데쓰로
Publication of KR940027054A publication Critical patent/KR940027054A/ko
Application granted granted Critical
Publication of KR100281935B1 publication Critical patent/KR100281935B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H10P72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H10P72/722—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/24—Arrangements for measuring quantities of charge

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
KR1019940010382A 1993-05-12 1994-05-12 자기 바이어스 측정방법 및 그 장치와 정전 흡착장치 Expired - Fee Related KR100281935B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13385693A JP3306677B2 (ja) 1993-05-12 1993-05-12 自己バイアス測定方法及び装置並びに静電吸着装置
JP93-133856 1993-05-12
JP13915393A JP3315197B2 (ja) 1993-05-17 1993-05-17 プラズマ処理方法
JP93-139153 1993-05-17

Publications (2)

Publication Number Publication Date
KR940027054A KR940027054A (ko) 1994-12-10
KR100281935B1 true KR100281935B1 (ko) 2001-03-02

Family

ID=26468107

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940010382A Expired - Fee Related KR100281935B1 (ko) 1993-05-12 1994-05-12 자기 바이어스 측정방법 및 그 장치와 정전 흡착장치

Country Status (3)

Country Link
US (1) US5557215A (enExample)
KR (1) KR100281935B1 (enExample)
TW (1) TW257872B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064507A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 정전 척과 그의 제조방법
KR100757528B1 (ko) 2005-01-28 2007-09-11 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치
KR100918634B1 (ko) * 2002-12-04 2009-09-25 시바우라 메카트로닉스 가부시키가이샤 정전 흡착 장치 및 접합 장치

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JP3163973B2 (ja) * 1996-03-26 2001-05-08 日本電気株式会社 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法
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US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5737175A (en) * 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
US5793192A (en) * 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
US5904779A (en) * 1996-12-19 1999-05-18 Lam Research Corporation Wafer electrical discharge control by wafer lifter system
US6529362B2 (en) * 1997-03-06 2003-03-04 Applied Materials Inc. Monocrystalline ceramic electrostatic chuck
US5835335A (en) * 1997-03-26 1998-11-10 Lam Research Corporation Unbalanced bipolar electrostatic chuck power supplies and methods thereof
US6255601B1 (en) * 1997-04-01 2001-07-03 Applied Materials, Inc. Conductive feedthrough for a ceramic body and method of fabricating same
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JPH11260897A (ja) * 1998-03-12 1999-09-24 Matsushita Electric Ind Co Ltd 基板の取り扱い方法と装置、それに用いる吸着検査方法、装置
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US6198616B1 (en) * 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
WO1999060613A2 (en) * 1998-05-21 1999-11-25 Applied Materials, Inc. Method and apparatus for minimizing plasma destabilization within a semiconductor wafer processing system
US6967497B1 (en) * 1998-08-21 2005-11-22 Micron Technology, Inc. Wafer processing apparatuses and electronic device workpiece processing apparatuses
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
US6228278B1 (en) * 1998-09-30 2001-05-08 Lam Research Corporation Methods and apparatus for determining an etch endpoint in a plasma processing system
US6125025A (en) * 1998-09-30 2000-09-26 Lam Research Corporation Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US6361645B1 (en) 1998-10-08 2002-03-26 Lam Research Corporation Method and device for compensating wafer bias in a plasma processing chamber
JP2000258495A (ja) * 1999-03-12 2000-09-22 Oki Electric Ind Co Ltd 半導体デバイス試験装置
US6430022B2 (en) * 1999-04-19 2002-08-06 Applied Materials, Inc. Method and apparatus for controlling chucking force in an electrostatic
JP4394778B2 (ja) * 1999-09-22 2010-01-06 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US6409896B2 (en) 1999-12-01 2002-06-25 Applied Materials, Inc. Method and apparatus for semiconductor wafer process monitoring
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
US6441606B1 (en) * 2000-10-17 2002-08-27 Micron Technology, Inc. Dual zone wafer test apparatus
JP2002203837A (ja) * 2000-12-28 2002-07-19 Mitsubishi Electric Corp プラズマ処理方法および装置並びに半導体装置の製造方法
JPWO2002059954A1 (ja) * 2001-01-25 2004-10-14 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR100765539B1 (ko) * 2001-05-18 2007-10-10 엘지.필립스 엘시디 주식회사 화학기상 증착장비
US6714033B1 (en) * 2001-07-11 2004-03-30 Lam Research Corporation Probe for direct wafer potential measurements
US6827987B2 (en) * 2001-07-27 2004-12-07 Applied Materials, Inc. Method of reducing an electrostatic charge on a substrate during a PECVD process
US6853953B2 (en) 2001-08-07 2005-02-08 Tokyo Electron Limited Method for characterizing the performance of an electrostatic chuck
DE10151441B4 (de) * 2001-10-18 2015-08-20 Infineon Technologies Ag Anordnung und Verfahren zur Aufnahme und zum Bearbeiten eines dünnen Wafers
JP2003233080A (ja) * 2002-02-05 2003-08-22 Lg Phillips Lcd Co Ltd 合着装置及びこれを用いた液晶表示装置の製造方法
US6677167B2 (en) * 2002-03-04 2004-01-13 Hitachi High-Technologies Corporation Wafer processing apparatus and a wafer stage and a wafer processing method
TWI304158B (en) * 2003-01-15 2008-12-11 Asml Netherlands Bv Detection assembly and lithographic projection apparatus provided with such a detection assembly
JP4387125B2 (ja) * 2003-06-09 2009-12-16 東京エレクトロン株式会社 検査方法及び検査装置
JP4416569B2 (ja) * 2004-05-24 2010-02-17 キヤノン株式会社 堆積膜形成方法および堆積膜形成装置
JP2006100763A (ja) * 2004-09-06 2006-04-13 Fuji Photo Film Co Ltd 固体撮像装置の製造方法及び接合装置
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US7304490B2 (en) * 2004-11-05 2007-12-04 Solid State Measurements, Inc. In-situ wafer and probe desorption using closed loop heating
KR100584189B1 (ko) * 2005-03-16 2006-05-29 동경 엘렉트론 주식회사 기판가열기능을 구비한 기판 탑재 기구 및 기판 처리 장치
JP2007048986A (ja) * 2005-08-10 2007-02-22 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US20070034957A1 (en) * 2005-08-12 2007-02-15 Wagner Richard J Electrostatic foot for non-permanent attachment
JP5094002B2 (ja) * 2005-09-06 2012-12-12 ルネサスエレクトロニクス株式会社 プラズマ処理装置およびその異常放電抑止方法
CN100362644C (zh) * 2005-12-07 2008-01-16 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘
JP4986459B2 (ja) * 2006-01-24 2012-07-25 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP4657949B2 (ja) * 2006-03-01 2011-03-23 株式会社日立ハイテクノロジーズ エッチング処理装置および自己バイアス電圧測定方法ならびにエッチング処理装置の監視方法
JP4935149B2 (ja) * 2006-03-30 2012-05-23 東京エレクトロン株式会社 プラズマ処理用の電極板及びプラズマ処理装置
KR101394337B1 (ko) * 2006-08-30 2014-05-13 엘아이지에이디피 주식회사 정전척
US20080084650A1 (en) * 2006-10-04 2008-04-10 Applied Materials, Inc. Apparatus and method for substrate clamping in a plasma chamber
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JP5683822B2 (ja) * 2009-03-06 2015-03-11 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置用の電極
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JP5731485B2 (ja) 2009-05-15 2015-06-10 インテグリス・インコーポレーテッド ポリマー突起を有する静電チャック
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JP6655310B2 (ja) * 2015-07-09 2020-02-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
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US10825657B2 (en) 2017-03-21 2020-11-03 Hitachi High-Tech Corporation Plasma processing apparatus
CN118412315A (zh) 2017-06-16 2024-07-30 周星工程股份有限公司 基板处理装置和用于真空的旋转电连接器
KR102773438B1 (ko) * 2018-04-12 2025-02-27 에이에스엠엘 네델란즈 비.브이. 정전 클램프를 포함하는 장치 및 그 장치의 작동 방법
JP7241540B2 (ja) * 2018-12-28 2023-03-17 東京エレクトロン株式会社 測定方法及び測定治具
JP7426842B2 (ja) * 2020-02-12 2024-02-02 東京エレクトロン株式会社 ステージ装置、給電機構、および処理装置
KR102787867B1 (ko) * 2020-07-03 2025-04-01 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 표시 장치의 제조 방법
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CN117441227A (zh) * 2022-05-23 2024-01-23 株式会社日立高新技术 内壁构件的再生方法
CN119069332B (zh) * 2024-11-04 2025-03-04 中微半导体设备(上海)股份有限公司 防止下电极组件发生电弧放电的方法及等离子体处理设备

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020064507A (ko) * 2001-02-02 2002-08-09 삼성전자 주식회사 정전 척과 그의 제조방법
KR100918634B1 (ko) * 2002-12-04 2009-09-25 시바우라 메카트로닉스 가부시키가이샤 정전 흡착 장치 및 접합 장치
KR100757528B1 (ko) 2005-01-28 2007-09-11 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마처리방법 및 플라즈마처리장치

Also Published As

Publication number Publication date
TW257872B (enExample) 1995-09-21
US5557215A (en) 1996-09-17
KR940027054A (ko) 1994-12-10

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