KR100275193B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100275193B1
KR100275193B1 KR1019960028747A KR19960028747A KR100275193B1 KR 100275193 B1 KR100275193 B1 KR 100275193B1 KR 1019960028747 A KR1019960028747 A KR 1019960028747A KR 19960028747 A KR19960028747 A KR 19960028747A KR 100275193 B1 KR100275193 B1 KR 100275193B1
Authority
KR
South Korea
Prior art keywords
dummy
data
bit lines
transistor
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960028747A
Other languages
English (en)
Korean (ko)
Other versions
KR970008176A (ko
Inventor
야스오미 다나카
Original Assignee
우에시마 세이스케
야마하 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우에시마 세이스케, 야마하 가부시키가이샤 filed Critical 우에시마 세이스케
Publication of KR970008176A publication Critical patent/KR970008176A/ko
Application granted granted Critical
Publication of KR100275193B1 publication Critical patent/KR100275193B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019960028747A 1995-07-17 1996-07-16 반도체기억장치 Expired - Fee Related KR100275193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-202886 1995-07-17
JP20288695A JPH0935490A (ja) 1995-07-17 1995-07-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR970008176A KR970008176A (ko) 1997-02-24
KR100275193B1 true KR100275193B1 (ko) 2001-01-15

Family

ID=16464837

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960028747A Expired - Fee Related KR100275193B1 (ko) 1995-07-17 1996-07-16 반도체기억장치

Country Status (3)

Country Link
JP (1) JPH0935490A (enExample)
KR (1) KR100275193B1 (enExample)
TW (1) TW302481B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902476B1 (ko) * 2001-07-03 2009-06-11 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 디지털 ｒｏｍ 회로 및 디지털 판독 전용 데이터의 저장 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11110967A (ja) * 1997-10-01 1999-04-23 Nec Corp 半導体メモリ装置
US6478231B1 (en) * 2001-06-29 2002-11-12 Hewlett Packard Company Methods for reducing the number of interconnects to the PIRM memory module
US7085153B2 (en) * 2003-05-13 2006-08-01 Innovative Silicon S.A. Semiconductor memory cell, array, architecture and device, and method of operating same
US20040228168A1 (en) * 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
US7978515B2 (en) 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
JP5368266B2 (ja) * 2009-11-11 2013-12-18 ローム株式会社 半導体不揮発記憶回路
JP5651632B2 (ja) 2012-03-26 2015-01-14 株式会社東芝 プログラマブルロジックスイッチ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100902476B1 (ko) * 2001-07-03 2009-06-11 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 디지털 ｒｏｍ 회로 및 디지털 판독 전용 데이터의 저장 방법

Also Published As

Publication number Publication date
KR970008176A (ko) 1997-02-24
JPH0935490A (ja) 1997-02-07
TW302481B (enExample) 1997-04-11

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