TW302481B - - Google Patents
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- Publication number
- TW302481B TW302481B TW085108486A TW85108486A TW302481B TW 302481 B TW302481 B TW 302481B TW 085108486 A TW085108486 A TW 085108486A TW 85108486 A TW85108486 A TW 85108486A TW 302481 B TW302481 B TW 302481B
- Authority
- TW
- Taiwan
- Prior art keywords
- majority
- virtual
- bit lines
- transistors
- data
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- 238000010276 construction Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/27—ROM only
- H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
- H10B20/38—Doping programmed, e.g. mask ROM
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20288695A JPH0935490A (ja) | 1995-07-17 | 1995-07-17 | 半導体記憶装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW302481B true TW302481B (enExample) | 1997-04-11 |
Family
ID=16464837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085108486A TW302481B (enExample) | 1995-07-17 | 1996-07-12 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0935490A (enExample) |
| KR (1) | KR100275193B1 (enExample) |
| TW (1) | TW302481B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11110967A (ja) * | 1997-10-01 | 1999-04-23 | Nec Corp | 半導体メモリ装置 |
| US6478231B1 (en) * | 2001-06-29 | 2002-11-12 | Hewlett Packard Company | Methods for reducing the number of interconnects to the PIRM memory module |
| US6430078B1 (en) * | 2001-07-03 | 2002-08-06 | Agilent Technologies, Inc. | Low-voltage digital ROM circuit and method |
| US20040228168A1 (en) * | 2003-05-13 | 2004-11-18 | Richard Ferrant | Semiconductor memory device and method of operating same |
| US7085153B2 (en) * | 2003-05-13 | 2006-08-01 | Innovative Silicon S.A. | Semiconductor memory cell, array, architecture and device, and method of operating same |
| US7978515B2 (en) | 2007-03-23 | 2011-07-12 | Sharp Kabushiki Kaisha | Semiconductor storage device and electronic equipment therefor |
| JP5368266B2 (ja) * | 2009-11-11 | 2013-12-18 | ローム株式会社 | 半導体不揮発記憶回路 |
| JP5651632B2 (ja) * | 2012-03-26 | 2015-01-14 | 株式会社東芝 | プログラマブルロジックスイッチ |
-
1995
- 1995-07-17 JP JP20288695A patent/JPH0935490A/ja active Pending
-
1996
- 1996-07-12 TW TW085108486A patent/TW302481B/zh active
- 1996-07-16 KR KR1019960028747A patent/KR100275193B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR970008176A (ko) | 1997-02-24 |
| JPH0935490A (ja) | 1997-02-07 |
| KR100275193B1 (ko) | 2001-01-15 |
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