JPH0935490A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPH0935490A
JPH0935490A JP20288695A JP20288695A JPH0935490A JP H0935490 A JPH0935490 A JP H0935490A JP 20288695 A JP20288695 A JP 20288695A JP 20288695 A JP20288695 A JP 20288695A JP H0935490 A JPH0935490 A JP H0935490A
Authority
JP
Japan
Prior art keywords
bit line
dummy
memory cell
data
paired
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20288695A
Other languages
English (en)
Japanese (ja)
Inventor
Taishin Tanaka
▲泰▼臣 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yamaha Corp
Original Assignee
Yamaha Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yamaha Corp filed Critical Yamaha Corp
Priority to JP20288695A priority Critical patent/JPH0935490A/ja
Priority to TW085108486A priority patent/TW302481B/zh
Priority to KR1019960028747A priority patent/KR100275193B1/ko
Publication of JPH0935490A publication Critical patent/JPH0935490A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/27—ROM only
    • H10B20/30—ROM only having the source region and the drain region on the same level, e.g. lateral transistors
    • H10B20/38—Doping programmed, e.g. mask ROM

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP20288695A 1995-07-17 1995-07-17 半導体記憶装置 Pending JPH0935490A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP20288695A JPH0935490A (ja) 1995-07-17 1995-07-17 半導体記憶装置
TW085108486A TW302481B (enExample) 1995-07-17 1996-07-12
KR1019960028747A KR100275193B1 (ko) 1995-07-17 1996-07-16 반도체기억장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20288695A JPH0935490A (ja) 1995-07-17 1995-07-17 半導体記憶装置

Publications (1)

Publication Number Publication Date
JPH0935490A true JPH0935490A (ja) 1997-02-07

Family

ID=16464837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20288695A Pending JPH0935490A (ja) 1995-07-17 1995-07-17 半導体記憶装置

Country Status (3)

Country Link
JP (1) JPH0935490A (enExample)
KR (1) KR100275193B1 (enExample)
TW (1) TW302481B (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030003054A (ko) * 2001-06-29 2003-01-09 휴렛-팩커드 컴퍼니(델라웨어주법인) 메모리 장치 및 상호접속 수 감소 방법
CN1130624C (zh) * 1997-10-01 2003-12-10 恩益禧电子股份有限公司 一种半导体存储器
JP2007503678A (ja) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン， インコーポレーテッド 半導体メモリ素子及び該素子を動作させる方法
JP2007516547A (ja) * 2003-05-13 2007-06-21 イノヴァティーヴ シリコン ソシエテ アノニム 半導体メモリセル、アレイ、構造及び素子、及びこれらを動作させる方法
JP2011103158A (ja) * 2009-11-11 2011-05-26 Rohm Co Ltd 半導体不揮発記憶回路
US7978515B2 (en) 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
JP2013201396A (ja) * 2012-03-26 2013-10-03 Toshiba Corp プログラマブルロジックスイッチ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6430078B1 (en) * 2001-07-03 2002-08-06 Agilent Technologies, Inc. Low-voltage digital ROM circuit and method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1130624C (zh) * 1997-10-01 2003-12-10 恩益禧电子股份有限公司 一种半导体存储器
KR20030003054A (ko) * 2001-06-29 2003-01-09 휴렛-팩커드 컴퍼니(델라웨어주법인) 메모리 장치 및 상호접속 수 감소 방법
JP2007503678A (ja) * 2003-05-13 2007-02-22 イノヴァティーヴ シリコン， インコーポレーテッド 半導体メモリ素子及び該素子を動作させる方法
JP2007516547A (ja) * 2003-05-13 2007-06-21 イノヴァティーヴ シリコン ソシエテ アノニム 半導体メモリセル、アレイ、構造及び素子、及びこれらを動作させる方法
US7978515B2 (en) 2007-03-23 2011-07-12 Sharp Kabushiki Kaisha Semiconductor storage device and electronic equipment therefor
JP2011103158A (ja) * 2009-11-11 2011-05-26 Rohm Co Ltd 半導体不揮発記憶回路
JP2013201396A (ja) * 2012-03-26 2013-10-03 Toshiba Corp プログラマブルロジックスイッチ
US8836007B2 (en) 2012-03-26 2014-09-16 Kabushiki Kaisha Toshiba Programmable logic switch

Also Published As

Publication number Publication date
TW302481B (enExample) 1997-04-11
KR970008176A (ko) 1997-02-24
KR100275193B1 (ko) 2001-01-15

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