KR100274921B1 - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR100274921B1
KR100274921B1 KR1019970050905A KR19970050905A KR100274921B1 KR 100274921 B1 KR100274921 B1 KR 100274921B1 KR 1019970050905 A KR1019970050905 A KR 1019970050905A KR 19970050905 A KR19970050905 A KR 19970050905A KR 100274921 B1 KR100274921 B1 KR 100274921B1
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KR
South Korea
Prior art keywords
power supply
voltage
circuit
node
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970050905A
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English (en)
Korean (ko)
Other versions
KR19980079393A (ko
Inventor
마사키 츠쿠데
후카시 모리시타
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR19980079393A publication Critical patent/KR19980079393A/ko
Application granted granted Critical
Publication of KR100274921B1 publication Critical patent/KR100274921B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50008—Marginal testing, e.g. race, voltage or current testing of impedance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1019970050905A 1997-03-27 1997-10-02 반도체 집적 회로 장치 Expired - Fee Related KR100274921B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07616197A JP4046382B2 (ja) 1997-03-27 1997-03-27 半導体集積回路装置
JP97-076161 1997-03-27

Publications (2)

Publication Number Publication Date
KR19980079393A KR19980079393A (ko) 1998-11-25
KR100274921B1 true KR100274921B1 (ko) 2001-01-15

Family

ID=13597347

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970050905A Expired - Fee Related KR100274921B1 (ko) 1997-03-27 1997-10-02 반도체 집적 회로 장치

Country Status (3)

Country Link
US (1) US5917765A (https=)
JP (1) JP4046382B2 (https=)
KR (1) KR100274921B1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835438A (en) * 1996-12-24 1998-11-10 Mosaid Technologies Incorporated Precharge-enable self boosting word line driver for an embedded DRAM
JP4074697B2 (ja) * 1997-11-28 2008-04-09 株式会社ルネサステクノロジ 半導体装置
KR19990047008A (ko) * 1997-12-02 1999-07-05 구본준 외부조건 변화에 둔감한 기준전압 발생회로
JPH11185498A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6119252A (en) * 1998-02-10 2000-09-12 Micron Technology Integrated circuit test mode with externally forced reference voltage
JPH11288588A (ja) * 1998-04-02 1999-10-19 Mitsubishi Electric Corp 半導体回路装置
JP2000021170A (ja) * 1998-04-30 2000-01-21 Mitsubishi Electric Corp 半導体集積回路装置
KR100294021B1 (ko) * 1998-09-08 2001-07-12 윤종용 메모리모듈의테스트장치
JP3459192B2 (ja) * 1999-03-26 2003-10-20 沖電気工業株式会社 半導体集積回路
JP3478996B2 (ja) * 1999-06-01 2003-12-15 Ｎｅｃエレクトロニクス株式会社 低振幅ドライバ回路及びこれを含む半導体装置
KR100576491B1 (ko) * 1999-12-23 2006-05-09 주식회사 하이닉스반도체 이중 내부전압 발생장치
DE10014388A1 (de) 2000-03-23 2001-10-04 Infineon Technologies Ag Verfahren zur Durchführung eines Burn-in-Prozesses eines Speichers
JP3602028B2 (ja) * 2000-03-27 2004-12-15 沖電気工業株式会社 半導体集積回路
DE10050761A1 (de) * 2000-10-13 2002-05-16 Infineon Technologies Ag Spannungsregelungsschaltung, insbelondere für Halbleiterspeicher
JP2002124637A (ja) * 2000-10-18 2002-04-26 Oki Micro Design Co Ltd 半導体集積回路
KR100383261B1 (ko) * 2001-03-12 2003-05-09 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 입력신호 버퍼방법
JP2003059297A (ja) * 2001-08-08 2003-02-28 Mitsubishi Electric Corp 半導体記憶装置およびそれを用いた半導体モジュール
KR100422952B1 (ko) * 2002-06-14 2004-03-16 주식회사 하이닉스반도체 반도체 메모리의 비트라인 균등화 신호 제어회로
JP4286085B2 (ja) * 2003-07-28 2009-06-24 Ｏｋｉセミコンダクタ株式会社 増幅器及びそれを用いた半導体記憶装置
JP2005135458A (ja) * 2003-10-28 2005-05-26 Renesas Technology Corp 半導体記憶装置
US7221206B2 (en) * 2004-03-18 2007-05-22 Denso Corporation Integrated circuit device having clock signal output circuit
JP2006332456A (ja) * 2005-05-27 2006-12-07 Fujitsu Ltd 半導体装置及び試験モード設定方法
JP5038616B2 (ja) 2005-11-14 2012-10-03 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4774000B2 (ja) * 2007-03-19 2011-09-14 富士通セミコンダクター株式会社 半導体集積回路及び半導体集積回路が組み込まれた半導体装置
KR20100103303A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 신뢰성 평가회로 및 신뢰성 평가시스템
KR101003153B1 (ko) * 2009-05-15 2010-12-21 주식회사 하이닉스반도체 전압 안정화 회로 및 이를 이용한 반도체 메모리 장치
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
US10978111B1 (en) * 2019-12-05 2021-04-13 Winbond Electronics Corp. Sense amplifier circuit with reference voltage holding circuit for maintaining sense amplifier reference voltage when the sense amplifier operates under standby mode
CN118351895A (zh) * 2023-01-06 2024-07-16 长鑫存储技术有限公司 半导体存储装置的电源供应电路和半导体存储装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04205887A (ja) * 1990-11-30 1992-07-28 Hitachi Ltd 半導体集積回路装置
JPH04243098A (ja) * 1991-01-16 1992-08-31 Matsushita Electron Corp 半導体記憶装置
JP2865486B2 (ja) * 1992-07-02 1999-03-08 三菱電機株式会社 半導体記憶装置
JP2768172B2 (ja) * 1992-09-30 1998-06-25 日本電気株式会社 半導体メモリ装置
KR0141466B1 (ko) * 1992-10-07 1998-07-15 모리시타 요이찌 내부 강압회로

Also Published As

Publication number Publication date
KR19980079393A (ko) 1998-11-25
JPH10268000A (ja) 1998-10-09
JP4046382B2 (ja) 2008-02-13
US5917765A (en) 1999-06-29

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