KR100255880B1 - 포지티브형 레지스트 조성물 - Google Patents

포지티브형 레지스트 조성물 Download PDF

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Publication number
KR100255880B1
KR100255880B1 KR1019930007724A KR930007724A KR100255880B1 KR 100255880 B1 KR100255880 B1 KR 100255880B1 KR 1019930007724 A KR1019930007724 A KR 1019930007724A KR 930007724 A KR930007724 A KR 930007724A KR 100255880 B1 KR100255880 B1 KR 100255880B1
Authority
KR
South Korea
Prior art keywords
resist composition
alkali
positive
general formula
sulfonic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930007724A
Other languages
English (en)
Korean (ko)
Other versions
KR930023769A (ko
Inventor
야스노리 우에다니
쥰 도미오까
히로또시 나까니시
Original Assignee
고오사이 아끼오
스미또모 가가꾸 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고오사이 아끼오, 스미또모 가가꾸 고교 가부시키가이샤 filed Critical 고오사이 아끼오
Publication of KR930023769A publication Critical patent/KR930023769A/ko
Application granted granted Critical
Publication of KR100255880B1 publication Critical patent/KR100255880B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1019930007724A 1992-05-18 1993-05-06 포지티브형 레지스트 조성물 Expired - Lifetime KR100255880B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP92-124536 1992-05-18
JP04124536A JP3094652B2 (ja) 1992-05-18 1992-05-18 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR930023769A KR930023769A (ko) 1993-12-21
KR100255880B1 true KR100255880B1 (ko) 2000-06-01

Family

ID=14887906

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930007724A Expired - Lifetime KR100255880B1 (ko) 1992-05-18 1993-05-06 포지티브형 레지스트 조성물

Country Status (8)

Country Link
US (1) US5407778A (enExample)
EP (1) EP0570884B1 (enExample)
JP (1) JP3094652B2 (enExample)
KR (1) KR100255880B1 (enExample)
CA (1) CA2095107A1 (enExample)
DE (1) DE69309769T2 (enExample)
MX (1) MX9302826A (enExample)
TW (1) TW312754B (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0886183A1 (en) * 1993-12-17 1998-12-23 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP3224115B2 (ja) * 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0695740B1 (en) 1994-08-05 2000-11-22 Sumitomo Chemical Company Limited Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
DE69519781T2 (de) * 1994-10-05 2001-06-07 Arakawa Chemical Industries, Ltd. Strahlungsempfindliche Harzzusammensetzung
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
JP3501422B2 (ja) * 1995-03-17 2004-03-02 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5750310A (en) * 1995-04-27 1998-05-12 Fuji Photo Film Co., Ltd. Positive photoresist composition
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
DE69619763T2 (de) * 1995-10-18 2002-11-21 Sumitomo Chemical Co., Ltd. Positiv arbeitende Photolockzusammensetzung und Photosensibilisatoren
JP3485139B2 (ja) * 1996-01-30 2004-01-13 東京応化工業株式会社 ポジ型ホトレジスト組成物
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
KR100374014B1 (ko) * 1999-04-02 2003-02-26 김수택 합성수지 형광 착색사로된 가림망

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
JPS58134631A (ja) * 1982-01-08 1983-08-10 Konishiroku Photo Ind Co Ltd 感光性組成物
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins
JPS6210646A (ja) * 1985-07-09 1987-01-19 Kanto Kagaku Kk ポジ型フオトレジスト組成物
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US4957846A (en) * 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
JP2700918B2 (ja) * 1989-04-26 1998-01-21 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2741243B2 (ja) * 1989-05-11 1998-04-15 日本ゼオン株式会社 ポジ型レジスト組成物
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
EP0570884B1 (en) 1997-04-16
JPH05323597A (ja) 1993-12-07
EP0570884A3 (en) 1995-06-07
JP3094652B2 (ja) 2000-10-03
CA2095107A1 (en) 1993-11-19
MX9302826A (es) 1994-02-28
KR930023769A (ko) 1993-12-21
DE69309769D1 (de) 1997-05-22
DE69309769T2 (de) 1997-07-31
EP0570884A2 (en) 1993-11-24
US5407778A (en) 1995-04-18
TW312754B (enExample) 1997-08-11

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