MX9302826A - Composicion de capa protectora, positiva. - Google Patents
Composicion de capa protectora, positiva.Info
- Publication number
- MX9302826A MX9302826A MX9302826A MX9302826A MX9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A
- Authority
- MX
- Mexico
- Prior art keywords
- protective layer
- layer composition
- alkyl
- positive protective
- diester
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Se describe una composición de capa protectora positiva que comprende una resina soluble en álcali y un material de quinon-diazida que contiene un diéster seleccionado de los compuestos fenólicos representados por las siguientes fórmulas generales (I) y (II); en donde R1 y R2 representan cada uno hidrógeno, halógeno, -OCOR3, alquilo o alcoxi, en los cuales R3 representa alquilo o fenilo, x e y representan cada uno un átomo de hidrógeno, un grupo alquilo o fenilo; en donde el contenido del diéster es 50 o más con la luz. Esta composición es excelente en el balance entre las propiedades tales como la resolución, perfil y profundidad de foco.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04124536A JP3094652B2 (ja) | 1992-05-18 | 1992-05-18 | ポジ型レジスト組成物 |
Publications (1)
Publication Number | Publication Date |
---|---|
MX9302826A true MX9302826A (es) | 1994-02-28 |
Family
ID=14887906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX9302826A MX9302826A (es) | 1992-05-18 | 1993-05-14 | Composicion de capa protectora, positiva. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5407778A (es) |
EP (1) | EP0570884B1 (es) |
JP (1) | JP3094652B2 (es) |
KR (1) | KR100255880B1 (es) |
CA (1) | CA2095107A1 (es) |
DE (1) | DE69309769T2 (es) |
MX (1) | MX9302826A (es) |
TW (1) | TW312754B (es) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0886183A1 (en) * | 1993-12-17 | 1998-12-23 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
JP3224115B2 (ja) * | 1994-03-17 | 2001-10-29 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
DE69519455T2 (de) | 1994-08-05 | 2001-06-28 | Sumitomo Chemical Co., Ltd. | Chinondiazidsulfonsäureester und diese enthaltende,positiv arbeitende Photoresistzusammensetzungen |
EP0706090B1 (en) * | 1994-10-05 | 2001-01-03 | JSR Corporation | Radiation sensitive resin composition |
JP3278306B2 (ja) | 1994-10-31 | 2002-04-30 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
US5541033A (en) * | 1995-02-01 | 1996-07-30 | Ocg Microelectronic Materials, Inc. | Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions |
JP3501422B2 (ja) * | 1995-03-17 | 2004-03-02 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5750310A (en) * | 1995-04-27 | 1998-05-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition |
JP3427562B2 (ja) * | 1995-05-09 | 2003-07-22 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
EP0769485B1 (en) * | 1995-10-18 | 2002-03-13 | Sumitomo Chemical Company, Limited | Positive resist composition and photosensitizers |
JP3485139B2 (ja) * | 1996-01-30 | 2004-01-13 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US5821345A (en) * | 1996-03-12 | 1998-10-13 | Shipley Company, L.L.C. | Thermodynamically stable photoactive compound |
US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
JP4219435B2 (ja) * | 1997-12-15 | 2009-02-04 | 東京応化工業株式会社 | ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物 |
KR100323831B1 (ko) * | 1999-03-30 | 2002-02-07 | 윤종용 | 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법 |
KR100374014B1 (ko) * | 1999-04-02 | 2003-02-26 | 김수택 | 합성수지 형광 착색사로된 가림망 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4529682A (en) * | 1981-06-22 | 1985-07-16 | Philip A. Hunt Chemical Corporation | Positive photoresist composition with cresol-formaldehyde novolak resins |
JPS58134631A (ja) * | 1982-01-08 | 1983-08-10 | Konishiroku Photo Ind Co Ltd | 感光性組成物 |
GB8505402D0 (en) * | 1985-03-02 | 1985-04-03 | Ciba Geigy Ag | Modified phenolic resins |
JPS6210646A (ja) * | 1985-07-09 | 1987-01-19 | Kanto Kagaku Kk | ポジ型フオトレジスト組成物 |
JP2715480B2 (ja) * | 1988-10-13 | 1998-02-18 | 住友化学工業株式会社 | ポジ型レジスト用組成物 |
US5178986A (en) * | 1988-10-17 | 1993-01-12 | Shipley Company Inc. | Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol |
US4957846A (en) * | 1988-12-27 | 1990-09-18 | Olin Hunt Specialty Products Inc. | Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group |
JP2700918B2 (ja) * | 1989-04-26 | 1998-01-21 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
JP2741243B2 (ja) * | 1989-05-11 | 1998-04-15 | 日本ゼオン株式会社 | ポジ型レジスト組成物 |
JP2761786B2 (ja) * | 1990-02-01 | 1998-06-04 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
-
1992
- 1992-05-18 JP JP04124536A patent/JP3094652B2/ja not_active Expired - Lifetime
-
1993
- 1993-04-28 CA CA002095107A patent/CA2095107A1/en not_active Abandoned
- 1993-05-06 KR KR1019930007724A patent/KR100255880B1/ko not_active IP Right Cessation
- 1993-05-13 US US08/060,539 patent/US5407778A/en not_active Expired - Lifetime
- 1993-05-14 MX MX9302826A patent/MX9302826A/es not_active IP Right Cessation
- 1993-05-17 DE DE69309769T patent/DE69309769T2/de not_active Expired - Fee Related
- 1993-05-17 EP EP93108006A patent/EP0570884B1/en not_active Expired - Lifetime
- 1993-05-18 TW TW082103895A patent/TW312754B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100255880B1 (ko) | 2000-06-01 |
EP0570884A3 (en) | 1995-06-07 |
KR930023769A (ko) | 1993-12-21 |
DE69309769T2 (de) | 1997-07-31 |
US5407778A (en) | 1995-04-18 |
JPH05323597A (ja) | 1993-12-07 |
CA2095107A1 (en) | 1993-11-19 |
EP0570884B1 (en) | 1997-04-16 |
DE69309769D1 (de) | 1997-05-22 |
JP3094652B2 (ja) | 2000-10-03 |
TW312754B (es) | 1997-08-11 |
EP0570884A2 (en) | 1993-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG | Grant or registration | ||
MM | Annulment or lapse due to non-payment of fees |