MX9302826A - Composicion de capa protectora, positiva. - Google Patents

Composicion de capa protectora, positiva.

Info

Publication number
MX9302826A
MX9302826A MX9302826A MX9302826A MX9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A MX 9302826 A MX9302826 A MX 9302826A
Authority
MX
Mexico
Prior art keywords
protective layer
layer composition
alkyl
positive protective
diester
Prior art date
Application number
MX9302826A
Other languages
English (en)
Inventor
Yasunori Uetani
Jun Tomioka
Hirotoshi Nakanishi
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of MX9302826A publication Critical patent/MX9302826A/es

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

Se describe una composición de capa protectora positiva que comprende una resina soluble en álcali y un material de quinon-diazida que contiene un diéster seleccionado de los compuestos fenólicos representados por las siguientes fórmulas generales (I) y (II); en donde R1 y R2 representan cada uno hidrógeno, halógeno, -OCOR3, alquilo o alcoxi, en los cuales R3 representa alquilo o fenilo, x e y representan cada uno un átomo de hidrógeno, un grupo alquilo o fenilo; en donde el contenido del diéster es 50 o más con la luz. Esta composición es excelente en el balance entre las propiedades tales como la resolución, perfil y profundidad de foco.
MX9302826A 1992-05-18 1993-05-14 Composicion de capa protectora, positiva. MX9302826A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04124536A JP3094652B2 (ja) 1992-05-18 1992-05-18 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
MX9302826A true MX9302826A (es) 1994-02-28

Family

ID=14887906

Family Applications (1)

Application Number Title Priority Date Filing Date
MX9302826A MX9302826A (es) 1992-05-18 1993-05-14 Composicion de capa protectora, positiva.

Country Status (8)

Country Link
US (1) US5407778A (es)
EP (1) EP0570884B1 (es)
JP (1) JP3094652B2 (es)
KR (1) KR100255880B1 (es)
CA (1) CA2095107A1 (es)
DE (1) DE69309769T2 (es)
MX (1) MX9302826A (es)
TW (1) TW312754B (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0886183A1 (en) * 1993-12-17 1998-12-23 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP3224115B2 (ja) * 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0695740B1 (en) 1994-08-05 2000-11-22 Sumitomo Chemical Company Limited Quinonediazide sulfonic acid esters and positive photoresist compositions comprising the same
EP0706090B1 (en) * 1994-10-05 2001-01-03 JSR Corporation Radiation sensitive resin composition
JP3278306B2 (ja) 1994-10-31 2002-04-30 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US5541033A (en) * 1995-02-01 1996-07-30 Ocg Microelectronic Materials, Inc. Selected o-quinonediazide sulfonic acid esters of phenolic compounds and their use in radiation-sensitive compositions
JP3501422B2 (ja) * 1995-03-17 2004-03-02 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
US5750310A (en) * 1995-04-27 1998-05-12 Fuji Photo Film Co., Ltd. Positive photoresist composition
JP3427562B2 (ja) * 1995-05-09 2003-07-22 住友化学工業株式会社 ポジ型レジスト組成物
EP0769485B1 (en) * 1995-10-18 2002-03-13 Sumitomo Chemical Company, Limited Positive resist composition and photosensitizers
JP3485139B2 (ja) * 1996-01-30 2004-01-13 東京応化工業株式会社 ポジ型ホトレジスト組成物
US5821345A (en) * 1996-03-12 1998-10-13 Shipley Company, L.L.C. Thermodynamically stable photoactive compound
US5919597A (en) * 1997-10-30 1999-07-06 Ibm Corporation Of Armonk Methods for preparing photoresist compositions
JP4219435B2 (ja) * 1997-12-15 2009-02-04 東京応化工業株式会社 ポリフェノールジエステル化物の製造方法およびポジ型感光性組成物
KR100323831B1 (ko) * 1999-03-30 2002-02-07 윤종용 포토레지스트 조성물, 이의 제조 방법 및 이를 사용한 패턴의 형성방법
KR100374014B1 (ko) * 1999-04-02 2003-02-26 김수택 합성수지 형광 착색사로된 가림망

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
JPS58134631A (ja) * 1982-01-08 1983-08-10 Konishiroku Photo Ind Co Ltd 感光性組成物
GB8505402D0 (en) * 1985-03-02 1985-04-03 Ciba Geigy Ag Modified phenolic resins
JPS6210646A (ja) * 1985-07-09 1987-01-19 Kanto Kagaku Kk ポジ型フオトレジスト組成物
JP2715480B2 (ja) * 1988-10-13 1998-02-18 住友化学工業株式会社 ポジ型レジスト用組成物
US5178986A (en) * 1988-10-17 1993-01-12 Shipley Company Inc. Positive photoresist composition with naphthoquinonediazidesulfonate of oligomeric phenol
US4957846A (en) * 1988-12-27 1990-09-18 Olin Hunt Specialty Products Inc. Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group
JP2700918B2 (ja) * 1989-04-26 1998-01-21 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JP2741243B2 (ja) * 1989-05-11 1998-04-15 日本ゼオン株式会社 ポジ型レジスト組成物
JP2761786B2 (ja) * 1990-02-01 1998-06-04 富士写真フイルム株式会社 ポジ型フオトレジスト組成物

Also Published As

Publication number Publication date
JPH05323597A (ja) 1993-12-07
CA2095107A1 (en) 1993-11-19
KR100255880B1 (ko) 2000-06-01
EP0570884B1 (en) 1997-04-16
JP3094652B2 (ja) 2000-10-03
DE69309769T2 (de) 1997-07-31
EP0570884A2 (en) 1993-11-24
KR930023769A (ko) 1993-12-21
DE69309769D1 (de) 1997-05-22
US5407778A (en) 1995-04-18
TW312754B (es) 1997-08-11
EP0570884A3 (en) 1995-06-07

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Legal Events

Date Code Title Description
FG Grant or registration
MM Annulment or lapse due to non-payment of fees