KR100227644B1 - 반도체 소자의 트랜지스터 제조방법 - Google Patents

반도체 소자의 트랜지스터 제조방법 Download PDF

Info

Publication number
KR100227644B1
KR100227644B1 KR1019950016420A KR19950016420A KR100227644B1 KR 100227644 B1 KR100227644 B1 KR 100227644B1 KR 1019950016420 A KR1019950016420 A KR 1019950016420A KR 19950016420 A KR19950016420 A KR 19950016420A KR 100227644 B1 KR100227644 B1 KR 100227644B1
Authority
KR
South Korea
Prior art keywords
layer
soi
photoresist
transistor
soi layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950016420A
Other languages
English (en)
Korean (ko)
Other versions
KR970004069A (ko
Inventor
황준
Original Assignee
김영환
현대전자산업주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대전자산업주식회사 filed Critical 김영환
Priority to KR1019950016420A priority Critical patent/KR100227644B1/ko
Priority to TW085106813A priority patent/TW301034B/zh
Priority to JP8152113A priority patent/JPH098308A/ja
Priority to CN96108211A priority patent/CN1050701C/zh
Publication of KR970004069A publication Critical patent/KR970004069A/ko
Application granted granted Critical
Publication of KR100227644B1 publication Critical patent/KR100227644B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
KR1019950016420A 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법 Expired - Fee Related KR100227644B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019950016420A KR100227644B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법
TW085106813A TW301034B (enExample) 1995-06-20 1996-06-06
JP8152113A JPH098308A (ja) 1995-06-20 1996-06-13 半導体素子のトランジスター及びその製造方法
CN96108211A CN1050701C (zh) 1995-06-20 1996-06-19 半导体器件中的晶体管及其制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016420A KR100227644B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법

Publications (2)

Publication Number Publication Date
KR970004069A KR970004069A (ko) 1997-01-29
KR100227644B1 true KR100227644B1 (ko) 1999-11-01

Family

ID=19417585

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016420A Expired - Fee Related KR100227644B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법

Country Status (4)

Country Link
JP (1) JPH098308A (enExample)
KR (1) KR100227644B1 (enExample)
CN (1) CN1050701C (enExample)
TW (1) TW301034B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408437B2 (ja) 1998-10-30 2003-05-19 シャープ株式会社 半導体装置の製造方法
KR100343472B1 (ko) * 2000-08-31 2002-07-18 박종섭 모스 트랜지스터의 제조방법
US6780686B2 (en) * 2002-03-21 2004-08-24 Advanced Micro Devices, Inc. Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions
US7022575B2 (en) * 2003-10-29 2006-04-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185068A (ja) * 1989-01-12 1990-07-19 Toshiba Corp 電界効果型トランジスタの製造方法
JPH03155166A (ja) * 1989-11-14 1991-07-03 Fuji Electric Co Ltd 薄膜半導体素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766972B2 (ja) * 1989-06-22 1995-07-19 三菱電機株式会社 半導体装置の製造方法
JP2660451B2 (ja) * 1990-11-19 1997-10-08 三菱電機株式会社 半導体装置およびその製造方法
JPH05259457A (ja) * 1992-03-16 1993-10-08 Sharp Corp 薄膜トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185068A (ja) * 1989-01-12 1990-07-19 Toshiba Corp 電界効果型トランジスタの製造方法
JPH03155166A (ja) * 1989-11-14 1991-07-03 Fuji Electric Co Ltd 薄膜半導体素子

Also Published As

Publication number Publication date
CN1148273A (zh) 1997-04-23
JPH098308A (ja) 1997-01-10
KR970004069A (ko) 1997-01-29
CN1050701C (zh) 2000-03-22
TW301034B (enExample) 1997-03-21

Similar Documents

Publication Publication Date Title
US5552329A (en) Method of making metal oxide semiconductor transistors
KR0150105B1 (ko) 반도체 소자의 트랜지스터 제조방법
KR19980020943A (ko) 절연막 터널링 트랜지스터 및 그 제조방법
KR100227644B1 (ko) 반도체 소자의 트랜지스터 제조방법
KR0170515B1 (ko) Gold구조를 갖는 반도체장치 및 그의 제조방법
JP3049496B2 (ja) Ｍｏｓｆｅｔの製造方法
KR100220251B1 (ko) 반도체 소자 및 그의 제조방법
KR100260366B1 (ko) 반도체 소자의 제조 방법
KR100257756B1 (ko) 모스트랜지스터 제조 방법
KR0172044B1 (ko) 반도체 소자의 제조방법
JP2004221245A (ja) 半導体装置及びその製造方法
JP3148227B2 (ja) 半導体装置の製造方法
KR0165421B1 (ko) 반도체장치의 모스 트랜지스터 제조방법
KR960012262B1 (ko) 모스(mos) 트랜지스터 제조방법
KR0125296B1 (ko) 모스펫(mosfet) 제조방법
KR0167666B1 (ko) 반도체 소자의 트렌지스터 제조 방법
JPH0438834A (ja) Ｍｏｓトランジスタの製造方法
KR20010066328A (ko) 반도체소자의 트랜지스터 제조방법
KR100575612B1 (ko) 모스 전계효과트랜지스터 제조방법
KR100587379B1 (ko) 반도체 소자의 제조방법
KR100569570B1 (ko) 반도체소자의 모스전계효과 트렌지스터 제조방법
KR100266687B1 (ko) 트랜지스터 제조방법
KR100202642B1 (ko) 모스형 트랜지스터 및 그 제조 방법
KR100205342B1 (ko) 롬 코딩방법
KR950002199B1 (ko) Ldd구조의 mosfet 제조방법

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20080728

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20090805

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20090805

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000