TW301034B - - Google Patents
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- Publication number
- TW301034B TW301034B TW085106813A TW85106813A TW301034B TW 301034 B TW301034 B TW 301034B TW 085106813 A TW085106813 A TW 085106813A TW 85106813 A TW85106813 A TW 85106813A TW 301034 B TW301034 B TW 301034B
- Authority
- TW
- Taiwan
- Prior art keywords
- soi
- trench
- patent application
- item
- transistor according
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0135—Manufacturing their gate conductors
-
- H10P14/416—
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950016420A KR100227644B1 (ko) | 1995-06-20 | 1995-06-20 | 반도체 소자의 트랜지스터 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW301034B true TW301034B (enExample) | 1997-03-21 |
Family
ID=19417585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085106813A TW301034B (enExample) | 1995-06-20 | 1996-06-06 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH098308A (enExample) |
| KR (1) | KR100227644B1 (enExample) |
| CN (1) | CN1050701C (enExample) |
| TW (1) | TW301034B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3408437B2 (ja) | 1998-10-30 | 2003-05-19 | シャープ株式会社 | 半導体装置の製造方法 |
| KR100343472B1 (ko) * | 2000-08-31 | 2002-07-18 | 박종섭 | 모스 트랜지스터의 제조방법 |
| US6780686B2 (en) * | 2002-03-21 | 2004-08-24 | Advanced Micro Devices, Inc. | Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions |
| US7022575B2 (en) * | 2003-10-29 | 2006-04-04 | Sanyo Electric Co., Ltd. | Manufacturing method of semiconductor device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02185068A (ja) * | 1989-01-12 | 1990-07-19 | Toshiba Corp | 電界効果型トランジスタの製造方法 |
| JPH0766972B2 (ja) * | 1989-06-22 | 1995-07-19 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JPH03155166A (ja) * | 1989-11-14 | 1991-07-03 | Fuji Electric Co Ltd | 薄膜半導体素子 |
| JP2660451B2 (ja) * | 1990-11-19 | 1997-10-08 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JPH05259457A (ja) * | 1992-03-16 | 1993-10-08 | Sharp Corp | 薄膜トランジスタ |
-
1995
- 1995-06-20 KR KR1019950016420A patent/KR100227644B1/ko not_active Expired - Fee Related
-
1996
- 1996-06-06 TW TW085106813A patent/TW301034B/zh active
- 1996-06-13 JP JP8152113A patent/JPH098308A/ja active Pending
- 1996-06-19 CN CN96108211A patent/CN1050701C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1050701C (zh) | 2000-03-22 |
| CN1148273A (zh) | 1997-04-23 |
| KR970004069A (ko) | 1997-01-29 |
| JPH098308A (ja) | 1997-01-10 |
| KR100227644B1 (ko) | 1999-11-01 |
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