TW301034B - - Google Patents

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Publication number
TW301034B
TW301034B TW085106813A TW85106813A TW301034B TW 301034 B TW301034 B TW 301034B TW 085106813 A TW085106813 A TW 085106813A TW 85106813 A TW85106813 A TW 85106813A TW 301034 B TW301034 B TW 301034B
Authority
TW
Taiwan
Prior art keywords
soi
trench
patent application
item
transistor according
Prior art date
Application number
TW085106813A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW301034B publication Critical patent/TW301034B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/01Manufacture or treatment
    • H10D64/021Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135Manufacturing their gate conductors
    • H10P14/416

Landscapes

  • Thin Film Transistor (AREA)
TW085106813A 1995-06-20 1996-06-06 TW301034B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016420A KR100227644B1 (ko) 1995-06-20 1995-06-20 반도체 소자의 트랜지스터 제조방법

Publications (1)

Publication Number Publication Date
TW301034B true TW301034B (enExample) 1997-03-21

Family

ID=19417585

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106813A TW301034B (enExample) 1995-06-20 1996-06-06

Country Status (4)

Country Link
JP (1) JPH098308A (enExample)
KR (1) KR100227644B1 (enExample)
CN (1) CN1050701C (enExample)
TW (1) TW301034B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3408437B2 (ja) 1998-10-30 2003-05-19 シャープ株式会社 半導体装置の製造方法
KR100343472B1 (ko) * 2000-08-31 2002-07-18 박종섭 모스 트랜지스터의 제조방법
US6780686B2 (en) * 2002-03-21 2004-08-24 Advanced Micro Devices, Inc. Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions
US7022575B2 (en) * 2003-10-29 2006-04-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02185068A (ja) * 1989-01-12 1990-07-19 Toshiba Corp 電界効果型トランジスタの製造方法
JPH0766972B2 (ja) * 1989-06-22 1995-07-19 三菱電機株式会社 半導体装置の製造方法
JPH03155166A (ja) * 1989-11-14 1991-07-03 Fuji Electric Co Ltd 薄膜半導体素子
JP2660451B2 (ja) * 1990-11-19 1997-10-08 三菱電機株式会社 半導体装置およびその製造方法
JPH05259457A (ja) * 1992-03-16 1993-10-08 Sharp Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
CN1050701C (zh) 2000-03-22
CN1148273A (zh) 1997-04-23
KR970004069A (ko) 1997-01-29
JPH098308A (ja) 1997-01-10
KR100227644B1 (ko) 1999-11-01

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