KR100200223B1 - 평탄한 상표면을 가지고 있는 소자분리막을 포함하는 반도체 장치 및 그 제조방법 - Google Patents
평탄한 상표면을 가지고 있는 소자분리막을 포함하는 반도체 장치 및 그 제조방법 Download PDFInfo
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- KR100200223B1 KR100200223B1 KR1019960012436A KR19960012436A KR100200223B1 KR 100200223 B1 KR100200223 B1 KR 100200223B1 KR 1019960012436 A KR1019960012436 A KR 1019960012436A KR 19960012436 A KR19960012436 A KR 19960012436A KR 100200223 B1 KR100200223 B1 KR 100200223B1
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- Prior art keywords
- insulating film
- gate electrode
- opening
- forming
- film
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Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95205892 | 1995-08-11 | ||
JP7205892A JPH0955499A (ja) | 1995-08-11 | 1995-08-11 | 半導体装置およびその製造方法 |
JP95-205892 | 1995-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970013127A KR970013127A (ko) | 1997-03-29 |
KR100200223B1 true KR100200223B1 (ko) | 1999-06-15 |
Family
ID=16514472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960012436A KR100200223B1 (ko) | 1995-08-11 | 1996-04-23 | 평탄한 상표면을 가지고 있는 소자분리막을 포함하는 반도체 장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5844274A (de) |
JP (1) | JPH0955499A (de) |
KR (1) | KR100200223B1 (de) |
DE (1) | DE19615692C2 (de) |
TW (1) | TW374212B (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6478977B1 (en) | 1995-09-13 | 2002-11-12 | Hitachi, Ltd. | Polishing method and apparatus |
JPH09153610A (ja) * | 1995-12-01 | 1997-06-10 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US5998256A (en) * | 1996-11-01 | 1999-12-07 | Micron Technology, Inc. | Semiconductor processing methods of forming devices on a substrate, forming device arrays on a substrate, forming conductive lines on a substrate, and forming capacitor arrays on a substrate, and integrated circuitry |
US5846862A (en) * | 1997-05-20 | 1998-12-08 | Advanced Micro Devices | Semiconductor device having a vertical active region and method of manufacture thereof |
JPH1126757A (ja) * | 1997-06-30 | 1999-01-29 | Toshiba Corp | 半導体装置及びその製造方法 |
US6590250B2 (en) | 1997-11-25 | 2003-07-08 | Micron Technology, Inc. | DRAM capacitor array and integrated device array of substantially identically shaped devices |
DE69739250D1 (de) * | 1997-12-31 | 2009-03-26 | St Microelectronics Srl | Hochspannungsfeldeffekttransistor und Verfahren zu dessen Herstellung |
KR100315728B1 (ko) * | 1999-12-31 | 2001-12-13 | 박종섭 | 트랜지스터 및 그의 제조 방법 |
US20020113268A1 (en) * | 2000-02-01 | 2002-08-22 | Jun Koyama | Nonvolatile memory, semiconductor device and method of manufacturing the same |
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US8803245B2 (en) | 2008-06-30 | 2014-08-12 | Mcafee, Inc. | Method of forming stacked trench contacts and structures formed thereby |
US7745275B2 (en) * | 2008-09-10 | 2010-06-29 | Arm Limited | Integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region |
US9601630B2 (en) * | 2012-09-25 | 2017-03-21 | Stmicroelectronics, Inc. | Transistors incorporating metal quantum dots into doped source and drain regions |
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Publication number | Priority date | Publication date | Assignee | Title |
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KR950000141B1 (ko) * | 1990-04-03 | 1995-01-10 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체 장치 및 그 제조방법 |
US5276344A (en) * | 1990-04-27 | 1994-01-04 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor having impurity regions of different depths and manufacturing method thereof |
JPH04186733A (ja) * | 1990-11-20 | 1992-07-03 | Nec Corp | 半導体装置及びその製造方法 |
JP2899122B2 (ja) * | 1991-03-18 | 1999-06-02 | キヤノン株式会社 | 絶縁ゲートトランジスタ及び半導体集積回路 |
US5252515A (en) * | 1991-08-12 | 1993-10-12 | Taiwan Semiconductor Manufacturing Company | Method for field inversion free multiple layer metallurgy VLSI processing |
JP3128323B2 (ja) * | 1992-04-13 | 2001-01-29 | 株式会社東芝 | 半導体集積回路装置およびその製造方法 |
KR100309934B1 (ko) * | 1992-06-24 | 2002-06-20 | 구사마 사부로 | 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 |
KR0132281B1 (ko) * | 1992-12-21 | 1998-04-11 | 쓰지 하루오 | 반도체 장치의 형성방법 |
KR0121992B1 (ko) * | 1993-03-03 | 1997-11-12 | 모리시다 요이치 | 반도체장치 및 그 제조방법 |
JPH07205892A (ja) * | 1994-01-25 | 1995-08-08 | Hiroki Nakamura | 引き上げ式舵 |
US5600168A (en) * | 1994-04-20 | 1997-02-04 | Lg Semicon Co., Ltd. | Semiconductor element and method for fabricating the same |
JP3193845B2 (ja) * | 1995-05-24 | 2001-07-30 | シャープ株式会社 | 半導体装置及びその製造方法 |
US5675166A (en) * | 1995-07-07 | 1997-10-07 | Motorola, Inc. | FET with stable threshold voltage and method of manufacturing the same |
-
1995
- 1995-08-11 JP JP7205892A patent/JPH0955499A/ja active Pending
- 1995-08-30 TW TW084109126A patent/TW374212B/zh active
-
1996
- 1996-03-28 US US08/623,035 patent/US5844274A/en not_active Expired - Fee Related
- 1996-04-19 DE DE19615692A patent/DE19615692C2/de not_active Expired - Fee Related
- 1996-04-23 KR KR1019960012436A patent/KR100200223B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0955499A (ja) | 1997-02-25 |
US5844274A (en) | 1998-12-01 |
DE19615692A1 (de) | 1997-02-13 |
KR970013127A (ko) | 1997-03-29 |
TW374212B (en) | 1999-11-11 |
DE19615692C2 (de) | 2002-07-04 |
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