KR0171069B1 - 반도체 장치의 접촉부 형성방법 - Google Patents
반도체 장치의 접촉부 형성방법 Download PDFInfo
- Publication number
- KR0171069B1 KR0171069B1 KR1019940027615A KR19940027615A KR0171069B1 KR 0171069 B1 KR0171069 B1 KR 0171069B1 KR 1019940027615 A KR1019940027615 A KR 1019940027615A KR 19940027615 A KR19940027615 A KR 19940027615A KR 0171069 B1 KR0171069 B1 KR 0171069B1
- Authority
- KR
- South Korea
- Prior art keywords
- contact
- forming
- conductive
- semiconductor device
- area
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000002184 metal Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000012535 impurity Substances 0.000 claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000001465 metallisation Methods 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027615A KR0171069B1 (ko) | 1994-10-27 | 1994-10-27 | 반도체 장치의 접촉부 형성방법 |
JP19765695A JP3510939B2 (ja) | 1994-10-27 | 1995-08-02 | 半導体装置の金属配線接触部形成方法 |
US08/511,361 US5858872A (en) | 1994-10-27 | 1995-08-04 | Metal contact structure in semiconductor device, and a method of forming the same |
US09/163,570 US6034435A (en) | 1994-10-27 | 1998-09-30 | Metal contact structure in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027615A KR0171069B1 (ko) | 1994-10-27 | 1994-10-27 | 반도체 장치의 접촉부 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960015733A KR960015733A (ko) | 1996-05-22 |
KR0171069B1 true KR0171069B1 (ko) | 1999-03-30 |
Family
ID=19396102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940027615A KR0171069B1 (ko) | 1994-10-27 | 1994-10-27 | 반도체 장치의 접촉부 형성방법 |
Country Status (3)
Country | Link |
---|---|
US (2) | US5858872A (ja) |
JP (1) | JP3510939B2 (ja) |
KR (1) | KR0171069B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046098A (en) | 1998-02-23 | 2000-04-04 | Micron Technology, Inc. | Process of forming metal silicide interconnects |
JP4209178B2 (ja) * | 2002-11-26 | 2009-01-14 | 新光電気工業株式会社 | 電子部品実装構造及びその製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5842227A (ja) * | 1981-09-07 | 1983-03-11 | Toshiba Corp | 半導体装置の製造方法 |
ATE46791T1 (de) * | 1985-07-29 | 1989-10-15 | Siemens Ag | Verfahren zum selektiven auffuellen von in isolationsschichten geaetzten kontaktloechern mit metallisch leitenden materialien bei der herstellung von hoechstintegrierten halbleiterschaltungen sowie eine vorrichtung zur durchfuehrung des verfahrens. |
JPS62102559A (ja) * | 1985-10-29 | 1987-05-13 | Mitsubishi Electric Corp | 半導体装置及び製造方法 |
US5084413A (en) * | 1986-04-15 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Method for filling contact hole |
JPH0611080B2 (ja) * | 1987-02-20 | 1994-02-09 | 日本電気株式会社 | 半導体装置の製造方法 |
JPS63269547A (ja) * | 1987-04-27 | 1988-11-07 | Fujitsu Ltd | 半導体装置の製造方法 |
US4898841A (en) * | 1988-06-16 | 1990-02-06 | Northern Telecom Limited | Method of filling contact holes for semiconductor devices and contact structures made by that method |
JPH0324737A (ja) * | 1989-06-22 | 1991-02-01 | Nissan Motor Co Ltd | 半導体装置およびその製造方法 |
US5191397A (en) * | 1989-09-07 | 1993-03-02 | Kabushiki Kaisha Toshiba | SOI semiconductor device with a wiring electrode contacts a buried conductor and an impurity region |
US5243220A (en) * | 1990-03-23 | 1993-09-07 | Kabushiki Kaisha Toshiba | Semiconductor device having miniaturized contact electrode and wiring structure |
US5288664A (en) * | 1990-07-11 | 1994-02-22 | Fujitsu Ltd. | Method of forming wiring of semiconductor device |
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
US5187119A (en) * | 1991-02-11 | 1993-02-16 | The Boeing Company | Multichip module and integrated circuit substrates having planarized patterned surfaces |
US5472900A (en) * | 1991-12-31 | 1995-12-05 | Intel Corporation | Capacitor fabricated on a substrate containing electronic circuitry |
US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
JPH05283362A (ja) * | 1992-04-03 | 1993-10-29 | Sony Corp | 多層配線の形成方法 |
US5310626A (en) * | 1993-03-01 | 1994-05-10 | Motorola, Inc. | Method for forming a patterned layer using dielectric materials as a light-sensitive material |
US5514622A (en) * | 1994-08-29 | 1996-05-07 | Cypress Semiconductor Corporation | Method for the formation of interconnects and landing pads having a thin, conductive film underlying the plug or an associated contact of via hole |
KR0138305B1 (ko) * | 1994-11-30 | 1998-06-01 | 김광호 | 반도체소자 배선형성방법 |
-
1994
- 1994-10-27 KR KR1019940027615A patent/KR0171069B1/ko not_active IP Right Cessation
-
1995
- 1995-08-02 JP JP19765695A patent/JP3510939B2/ja not_active Expired - Fee Related
- 1995-08-04 US US08/511,361 patent/US5858872A/en not_active Expired - Fee Related
-
1998
- 1998-09-30 US US09/163,570 patent/US6034435A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5858872A (en) | 1999-01-12 |
JP3510939B2 (ja) | 2004-03-29 |
US6034435A (en) | 2000-03-07 |
JPH08139184A (ja) | 1996-05-31 |
KR960015733A (ko) | 1996-05-22 |
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E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
J201 | Request for trial against refusal decision | ||
B701 | Decision to grant | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20050923 Year of fee payment: 8 |
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LAPS | Lapse due to unpaid annual fee |