KR0165990B1 - 신호 라인과 픽셀 전극 사이의 단락 회로를 방지할 수 있는 액정표시 장치 및 이의 제조방법 - Google Patents

신호 라인과 픽셀 전극 사이의 단락 회로를 방지할 수 있는 액정표시 장치 및 이의 제조방법 Download PDF

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Publication number
KR0165990B1
KR0165990B1 KR1019940038847A KR19940038847A KR0165990B1 KR 0165990 B1 KR0165990 B1 KR 0165990B1 KR 1019940038847 A KR1019940038847 A KR 1019940038847A KR 19940038847 A KR19940038847 A KR 19940038847A KR 0165990 B1 KR0165990 B1 KR 0165990B1
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KR
South Korea
Prior art keywords
gate insulating
insulating layer
layer
signal line
pixel electrode
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KR1019940038847A
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English (en)
Korean (ko)
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KR950019870A (ko
Inventor
세이이찌 마쯔모또
Original Assignee
가네꼬 히사시
닛본덴기 가부시끼가이샤
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Publication of KR950019870A publication Critical patent/KR950019870A/ko
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1019940038847A 1993-12-30 1994-12-29 신호 라인과 픽셀 전극 사이의 단락 회로를 방지할 수 있는 액정표시 장치 및 이의 제조방법 Expired - Lifetime KR0165990B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35244293A JP2738289B2 (ja) 1993-12-30 1993-12-30 液晶表示装置の製造方法
JP93-352442 1993-12-30

Publications (2)

Publication Number Publication Date
KR950019870A KR950019870A (ko) 1995-07-24
KR0165990B1 true KR0165990B1 (ko) 1999-03-20

Family

ID=18424110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940038847A Expired - Lifetime KR0165990B1 (ko) 1993-12-30 1994-12-29 신호 라인과 픽셀 전극 사이의 단락 회로를 방지할 수 있는 액정표시 장치 및 이의 제조방법

Country Status (4)

Country Link
US (2) US5872021A (cg-RX-API-DMAC7.html)
JP (1) JP2738289B2 (cg-RX-API-DMAC7.html)
KR (1) KR0165990B1 (cg-RX-API-DMAC7.html)
TW (1) TW259862B (cg-RX-API-DMAC7.html)

Cited By (1)

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KR20160112086A (ko) * 2015-03-17 2016-09-28 삼성디스플레이 주식회사 표시 장치

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GB2312543B (en) * 1995-02-23 1999-06-30 Citizen Watch Co Ltd Liquid crystal display device and method of producing the same
KR100204071B1 (ko) * 1995-08-29 1999-06-15 구자홍 박막트랜지스터-액정표시장치 및 제조방법
JP2850850B2 (ja) * 1996-05-16 1999-01-27 日本電気株式会社 半導体装置の製造方法
TW418432B (en) * 1996-12-18 2001-01-11 Nippon Electric Co Manufacturing method of thin film transistor array
US6010923A (en) * 1997-03-31 2000-01-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
KR100488924B1 (ko) * 1997-06-27 2005-10-25 비오이 하이디스 테크놀로지 주식회사 액정표시소자의제조방법
US5998229A (en) * 1998-01-30 1999-12-07 Samsung Electronics Co., Ltd. Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon
CN1139837C (zh) * 1998-10-01 2004-02-25 三星电子株式会社 液晶显示器用薄膜晶体管阵列基板及其制造方法
WO2000031714A1 (en) * 1998-11-26 2000-06-02 Seiko Epson Corporation Electro-optical device and production method thereof and electronic equipment
US6368664B1 (en) * 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
JP3329313B2 (ja) 1999-06-02 2002-09-30 日本電気株式会社 薄膜トランジスタアレイおよび薄膜トランジスタアレイ製造方法
US6297161B1 (en) * 1999-07-12 2001-10-02 Chi Mei Optoelectronics Corp. Method for forming TFT array bus
KR100739366B1 (ko) * 1999-12-20 2007-07-16 엘지.필립스 엘시디 주식회사 박막 트랜지스터 및 그 제조방법
TW594135B (en) * 2000-01-29 2004-06-21 Chi Mei Optorlrctronics Co Ltd Wide viewing-angle liquid crystal display and the manufacturing method thereof
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) * 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3415602B2 (ja) * 2000-06-26 2003-06-09 鹿児島日本電気株式会社 パターン形成方法
KR100726132B1 (ko) * 2000-10-31 2007-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI291072B (en) * 2001-09-28 2007-12-11 Sanyo Electric Co Liquid crystal display unit
JP3957277B2 (ja) * 2002-04-15 2007-08-15 株式会社アドバンスト・ディスプレイ 液晶表示装置及びその製造方法
KR101126396B1 (ko) * 2004-06-25 2012-03-28 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
US11126627B2 (en) 2014-01-14 2021-09-21 Change Healthcare Holdings, Llc System and method for dynamic transactional data streaming
US10121557B2 (en) * 2014-01-21 2018-11-06 PokitDok, Inc. System and method for dynamic document matching and merging
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
US10007757B2 (en) 2014-09-17 2018-06-26 PokitDok, Inc. System and method for dynamic schedule aggregation
US10417379B2 (en) 2015-01-20 2019-09-17 Change Healthcare Holdings, Llc Health lending system and method using probabilistic graph models
US20160342750A1 (en) 2015-05-18 2016-11-24 PokitDok, Inc. Dynamic topological system and method for efficient claims processing
US10366204B2 (en) 2015-08-03 2019-07-30 Change Healthcare Holdings, Llc System and method for decentralized autonomous healthcare economy platform
WO2017066700A1 (en) 2015-10-15 2017-04-20 PokitDok, Inc. System and method for dynamic metadata persistence and correlation on api transactions
US10102340B2 (en) 2016-06-06 2018-10-16 PokitDok, Inc. System and method for dynamic healthcare insurance claims decision support
US10108954B2 (en) 2016-06-24 2018-10-23 PokitDok, Inc. System and method for cryptographically verified data driven contracts
US10805072B2 (en) 2017-06-12 2020-10-13 Change Healthcare Holdings, Llc System and method for autonomous dynamic person management

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JPH0717059Y2 (ja) * 1987-07-31 1995-04-19 三洋電機株式会社 液晶表示パネル用電極基板
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
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JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
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KR0169356B1 (ko) * 1995-01-06 1999-03-20 김광호 박막트랜지스터 액정 디스플레이 소자 및 그 제조방법
JP2776360B2 (ja) * 1996-02-28 1998-07-16 日本電気株式会社 薄膜トランジスタアレイ基板の製造方法

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Publication number Priority date Publication date Assignee Title
KR20160112086A (ko) * 2015-03-17 2016-09-28 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
JP2738289B2 (ja) 1998-04-08
US6114184A (en) 2000-09-05
US5872021A (en) 1999-02-16
KR950019870A (ko) 1995-07-24
JPH07199223A (ja) 1995-08-04
TW259862B (cg-RX-API-DMAC7.html) 1995-10-11

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