JP2738289B2 - 液晶表示装置の製造方法 - Google Patents

液晶表示装置の製造方法

Info

Publication number
JP2738289B2
JP2738289B2 JP35244293A JP35244293A JP2738289B2 JP 2738289 B2 JP2738289 B2 JP 2738289B2 JP 35244293 A JP35244293 A JP 35244293A JP 35244293 A JP35244293 A JP 35244293A JP 2738289 B2 JP2738289 B2 JP 2738289B2
Authority
JP
Japan
Prior art keywords
layer
gate insulating
insulating layer
gate
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP35244293A
Other languages
English (en)
Japanese (ja)
Other versions
JPH07199223A (ja
Inventor
統 助川
若彦 金子
浩史 井原
征一 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP35244293A priority Critical patent/JP2738289B2/ja
Priority to TW083111991A priority patent/TW259862B/zh
Priority to US08/364,221 priority patent/US5872021A/en
Priority to KR1019940038847A priority patent/KR0165990B1/ko
Publication of JPH07199223A publication Critical patent/JPH07199223A/ja
Priority to US08/962,299 priority patent/US6114184A/en
Application granted granted Critical
Publication of JP2738289B2 publication Critical patent/JP2738289B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP35244293A 1993-12-30 1993-12-30 液晶表示装置の製造方法 Expired - Lifetime JP2738289B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP35244293A JP2738289B2 (ja) 1993-12-30 1993-12-30 液晶表示装置の製造方法
TW083111991A TW259862B (cg-RX-API-DMAC7.html) 1993-12-30 1994-12-21
US08/364,221 US5872021A (en) 1993-12-30 1994-12-27 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode
KR1019940038847A KR0165990B1 (ko) 1993-12-30 1994-12-29 신호 라인과 픽셀 전극 사이의 단락 회로를 방지할 수 있는 액정표시 장치 및 이의 제조방법
US08/962,299 US6114184A (en) 1993-12-30 1997-10-31 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35244293A JP2738289B2 (ja) 1993-12-30 1993-12-30 液晶表示装置の製造方法

Publications (2)

Publication Number Publication Date
JPH07199223A JPH07199223A (ja) 1995-08-04
JP2738289B2 true JP2738289B2 (ja) 1998-04-08

Family

ID=18424110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP35244293A Expired - Lifetime JP2738289B2 (ja) 1993-12-30 1993-12-30 液晶表示装置の製造方法

Country Status (4)

Country Link
US (2) US5872021A (cg-RX-API-DMAC7.html)
JP (1) JP2738289B2 (cg-RX-API-DMAC7.html)
KR (1) KR0165990B1 (cg-RX-API-DMAC7.html)
TW (1) TW259862B (cg-RX-API-DMAC7.html)

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GB2312543B (en) * 1995-02-23 1999-06-30 Citizen Watch Co Ltd Liquid crystal display device and method of producing the same
KR100204071B1 (ko) * 1995-08-29 1999-06-15 구자홍 박막트랜지스터-액정표시장치 및 제조방법
JP2850850B2 (ja) * 1996-05-16 1999-01-27 日本電気株式会社 半導体装置の製造方法
TW418432B (en) * 1996-12-18 2001-01-11 Nippon Electric Co Manufacturing method of thin film transistor array
US6010923A (en) * 1997-03-31 2000-01-04 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device utilizing annealed semiconductor layer as channel region
KR100488924B1 (ko) * 1997-06-27 2005-10-25 비오이 하이디스 테크놀로지 주식회사 액정표시소자의제조방법
US5998229A (en) * 1998-01-30 1999-12-07 Samsung Electronics Co., Ltd. Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon
CN1139837C (zh) * 1998-10-01 2004-02-25 三星电子株式会社 液晶显示器用薄膜晶体管阵列基板及其制造方法
WO2000031714A1 (en) * 1998-11-26 2000-06-02 Seiko Epson Corporation Electro-optical device and production method thereof and electronic equipment
US6368664B1 (en) * 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
JP3329313B2 (ja) 1999-06-02 2002-09-30 日本電気株式会社 薄膜トランジスタアレイおよび薄膜トランジスタアレイ製造方法
US6297161B1 (en) * 1999-07-12 2001-10-02 Chi Mei Optoelectronics Corp. Method for forming TFT array bus
KR100739366B1 (ko) * 1999-12-20 2007-07-16 엘지.필립스 엘시디 주식회사 박막 트랜지스터 및 그 제조방법
TW594135B (en) * 2000-01-29 2004-06-21 Chi Mei Optorlrctronics Co Ltd Wide viewing-angle liquid crystal display and the manufacturing method thereof
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4785229B2 (ja) * 2000-05-09 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3415602B2 (ja) * 2000-06-26 2003-06-09 鹿児島日本電気株式会社 パターン形成方法
KR100726132B1 (ko) * 2000-10-31 2007-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI291072B (en) * 2001-09-28 2007-12-11 Sanyo Electric Co Liquid crystal display unit
JP3957277B2 (ja) * 2002-04-15 2007-08-15 株式会社アドバンスト・ディスプレイ 液晶表示装置及びその製造方法
KR101126396B1 (ko) * 2004-06-25 2012-03-28 엘지디스플레이 주식회사 박막트랜지스터 어레이 기판 및 그 제조방법
US11126627B2 (en) 2014-01-14 2021-09-21 Change Healthcare Holdings, Llc System and method for dynamic transactional data streaming
US10121557B2 (en) * 2014-01-21 2018-11-06 PokitDok, Inc. System and method for dynamic document matching and merging
KR20150137214A (ko) * 2014-05-28 2015-12-09 삼성디스플레이 주식회사 유기발광 디스플레이 장치 및 그 제조방법
US10007757B2 (en) 2014-09-17 2018-06-26 PokitDok, Inc. System and method for dynamic schedule aggregation
US10417379B2 (en) 2015-01-20 2019-09-17 Change Healthcare Holdings, Llc Health lending system and method using probabilistic graph models
KR102311728B1 (ko) * 2015-03-17 2021-10-12 삼성디스플레이 주식회사 표시 장치
US20160342750A1 (en) 2015-05-18 2016-11-24 PokitDok, Inc. Dynamic topological system and method for efficient claims processing
US10366204B2 (en) 2015-08-03 2019-07-30 Change Healthcare Holdings, Llc System and method for decentralized autonomous healthcare economy platform
WO2017066700A1 (en) 2015-10-15 2017-04-20 PokitDok, Inc. System and method for dynamic metadata persistence and correlation on api transactions
US10102340B2 (en) 2016-06-06 2018-10-16 PokitDok, Inc. System and method for dynamic healthcare insurance claims decision support
US10108954B2 (en) 2016-06-24 2018-10-23 PokitDok, Inc. System and method for cryptographically verified data driven contracts
US10805072B2 (en) 2017-06-12 2020-10-13 Change Healthcare Holdings, Llc System and method for autonomous dynamic person management

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US5166086A (en) * 1985-03-29 1992-11-24 Matsushita Electric Industrial Co., Ltd. Thin film transistor array and method of manufacturing same
JPH0717059Y2 (ja) * 1987-07-31 1995-04-19 三洋電機株式会社 液晶表示パネル用電極基板
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JPH02234126A (ja) * 1989-03-08 1990-09-17 Hitachi Ltd 液晶表示装置の製造方法
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
JPH04324938A (ja) * 1991-04-25 1992-11-13 Stanley Electric Co Ltd 薄膜トランジスタとその製造方法
US5539551A (en) * 1992-12-28 1996-07-23 Casio Computer Co., Ltd. LCD TFT drain and source electrodes having ohmic barrier, primary conductor, and liquid impermeable layers and method of making
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
KR0169356B1 (ko) * 1995-01-06 1999-03-20 김광호 박막트랜지스터 액정 디스플레이 소자 및 그 제조방법
JP2776360B2 (ja) * 1996-02-28 1998-07-16 日本電気株式会社 薄膜トランジスタアレイ基板の製造方法

Also Published As

Publication number Publication date
US6114184A (en) 2000-09-05
US5872021A (en) 1999-02-16
KR950019870A (ko) 1995-07-24
JPH07199223A (ja) 1995-08-04
KR0165990B1 (ko) 1999-03-20
TW259862B (cg-RX-API-DMAC7.html) 1995-10-11

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